Temperature Dependence of Circularly Polarized Radiation of an Injection Semiconductor Laser

JETP Letters - The temperature dependence of stimulated laser radiation with a high degree of circular polarization in chiral semiconductor nanostructures has been investigated in the temperature...     

Circularly polarized light emission from semiconductor planar chiral nanostructures

We demonstrate circularly polarized light emission from InAs quantum dots embedded in the waveguide region of a GaAs-based chiral nanostructure. The observed phenomenon originates due to a strong imbalance between left- and right-circularly polarized components of the vacuum field and results in a degree of polarization as high as 26% at room temperature. A strong circular anisotropy of the vacuum field modes inside the chiral nanostructure is visualized using numerical simulation. The results of the simulation agree well with experimental results.     

Modified spontaneous emission of CdTe quantum dots inside a photonic crystal

The angular dependence of the spontaneous emission of CdTe quantum dots (QDs) inside a photonic crystal with a pseudogap is reported. The sensitive dependences of the radiative lifetime and the photoluminescence spectrum of CdTe QDs on the observation angle demonstrate the effect of the photonic bandgap on the spontaneous emission of the QDs.     

Spontaneous emission in micro- and nano-structures

Spontaneous emission of emitters governing the performance of optoelectronic devices is a fundamental phenomenon, and it has strong environment-dependent characteristics. In this article, we mainly review the experimental and theoretical progresses in the control of spontaneous emission by manipulating optical modes with photonic crystals, optical microcavities and metallic nanostructures. The spontaneous emission from emitters in photonic crystals can be modified by the local density of states, and by employing photonic crystals, the devices’ efficiency is enhanced, the angular radiation pattern can be engineered, and highly efficient optoelectronic devices are achieved through decreasing the radiative lifetime. In quantum optical devices, microcavities would alter the lifetime of an excited state through tuning the resonance in the frequency and positioning between the emitters and cavity field, and inducing the emitters to emit spontaneous photons in a desired direction. The emerging enhanced electromagnetic field near metallic nanostructures can help to control and manipulate the spontaneous emission of an emitter. The use of micro- and nano-structures to manipulate spontaneous emission will open unprecedented opportunities for realizing functional photonic devices.     

Spontaneous emission in micro- and nano-structures

Spontaneous emission of emitters governing the performance of optoelectronic devices is a fundamental phenomenon, and it has strong environment-dependent characteristics. In this article, we mainly review the experimental and theoretical progresses in the control of spontaneous emission by manipulating optical modes with photonic crystals, optical microcavities and metallic nanostructures. The spontaneous emission from emitters in photonic crystals can be modified by the local density of states, and by employing photonic crystals, the devices’ efficiency is enhanced, the angular radiation pattern can be engineered, and highly efficient optoelectronic devices are achieved through decreasing the radiative lifetime. In quantum optical devices, microcavities would alter the lifetime of an excited state through tuning the resonance in the frequency and positioning between the emitters and cavity field, and inducing the emitters to emit spontaneous photons in a desired direction. The emerging enhanced electromagnetic field near metallic nanostructures can help to control and manipulate the spontaneous emission of an emitter. The use of micro- and nano-structures to manipulate spontaneous emission will open unprecedented opportunities for realizing functional photonic devices.     

Electron–Nuclear Spin Dynamics in Semiconductor QDs

This work presents an overview of investigations of the nuclear spin dynamics in nanostructures with negatively charged InGaAs/GaAs quantum dots characterized by strong quadrupole splitting of nuclear spin sublevels. The main method of the investigations is the experimental measurements and the theoretical analysis of the photoluminescence polarization as a function of the transverse magnetic field (effect Hanle). The dependence of the Hanle curve profile on the temporal protocol of optical excitation is examined. Experimental data are analyzed using an original approach based on separate consideration of behavior of the longitudinal and transverse components of the nuclear polarization. The rise and decay times of each component of the nuclear polarization and their dependence on transverse magnetic field strength are determined. To study the role of the Knight field in the dynamic of nuclear polarization, a weak additional magnetic field parallel to the optical axis is used. We have found that, only taking into account the nuclear spin fluctuations, we can accurately describe the measured Hanle curves and evaluate the parameters of the electron–nuclear spin system in the studied quantum dots. A new effect of the resonant optical pumping of nuclear spin polarization in an ensemble of the singly charged (In,Ga)As/GaAs quantum dots subjected to a transverse magnetic field is discussed. Nuclear spin resonances for all isotopes in the quantum dots are detected in that way. In particular, transitions between the states split off from the ±1/2 doublets by the nuclear quadrupole interaction are identified.     

Surface enhanced Raman scattering by CdS quantum dots

Surface enhanced Raman scattering is studied in nanostructures with CdS quantum dots formed using the Langmuir-Blodgett technology. Features due to quantum dot longitudinal optical phonons are observed in the Raman spectra of both free CdS quantum dots and such dots distributed in an organic matrix. The surface enhanced Raman scattering by nanostructures with CdS quantum dots covered by an Ag cluster film is observed experimentally. Applying Ag clusters onto the nanostructure surfaces results in a sharp (40-fold) increase in the intensity of Raman scattering by optical phonons in the quantum dots. It is shown that the dependence of surface enhanced Raman scattering on the excitation energy is resonant with a maximum at the energy corresponding to the maximum absorption coefficient of Ag clusters.     

Imaging single quantum dots in three-dimensional photonic crystals

Performing fluorescence wide-field microscopy we have imaged single semiconductor quantum dots deep inside a 3-dimensional photonic crystal prepared from colloidal polymer beads. Exploring the emission diffraction patterns in defocused images of quantum dots we demonstrate that the direction-dependent photonic stop band imprints an anisotropy to the angular emission of a single quantum dot. Hence a single, quasi-point-like emitter is manipulated to radiate its photons only to certain well-defined directions by means of the anisotropic light propagation in photonic crystals. The experiments thus provide new routes to evaluate local, frequency selective optical properties in 3-dimensional photonic crystals employing single emitters.     

Polarization spectroscopy of positive and negative trions in an InAs quantum dot

Using polarization-sensitive photoluminescence and photoluminescence excitation spectroscopy, we study single InAs/GaAs self-assembled quantum dots. The dots were embedded in an n-type, Schottky diode structure allowing for control of the charge state. We present here the exciton, singly charged exciton (positive and negative trions), and the twice negatively charged exciton. For non-resonant excitation below the wetting layer, we observed a large degree of polarization memory from the radiative recombination of both the positive and negative trions. In excitation spectra, through the p-shell, we have found several sharp resonances in the emission from the s-shell recombination of the dot in all charged states. Some of these excitation resonances exhibit strong coulomb shifts upon addition of charges into the quantum dot. One particular resonance of the negatively charged trion was found to exhibit a fine structure doublet under circular polarization. This observation is explained in terms of resonant absorption into the triplet states of the negative trion.     

Far field emission of micropillar and planar microcavities lattice-matched to ZnTe

We investigate light emission from ZnTe-based microcavities containing CdTe quantum dots (QDs), with 2D (planar cavity) and 0D (pillar cavities) photonic confinement. The angular distribution from the planar cavity is presented as well as 2D cross-sections of the far field distribution of radiation from the micropillars. The efficient and desirable modification of the isotropic radiation of the QDs is shown for such structures. The diffraction observed is found to be inherent for such experiments with large numerical aperture of the lens and small diameters of the investigated pillars. This diffraction is successfully modeled.     

The scattering of partially polarized light by oriented atoms

A compact expression is derived for the cross section of scattering of arbitrarily polarized light by oriented atomic systems, in which the dependence on the geometric parameters and on the Stokes parameters preassigning the state of partial polarization of incident radiation is explicitly separated. It is found that the cross section of any photoprocess accompanied by photon absorption (stimulated emission) contains the sum of the products of the circular and linear dichroisms of the process by the respective Stokes parameters. The effect of the atomic orientation and of the dissipation of light energy on the polarization singularities and angular distribution of scattered light is investigated. In particular, it is demonstrated that, in the case of an open dissipation channel, the angular distribution remains dependent on the atomic orientation even in the case of zero degree of circular polarization of scattered radiation.     

Optical properties of chiral photonic crystals with an anisotropic defect layer

Properties of defect modes in chiral photonic crystals with an anisotropic defect are considered. The influence of the defect layer thickness, its location in the crystal and orientation of its optical axis, as well as of the chiral photonic crystal thickness on the properties of defect modes is studied. It is shown that at certain values of the defect layer thickness the medium loses its main property, namely, the polarization dependence of the diffraction reflection. At certain thicknesses of the defect layer this system transforms from the source of the right circular polarization into the source of the left circular polarization, if the layer position in the chiral photonic crystal changes.     

Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities

An efficient single-photon source based on low-density InGaAs quantum dots in a photonic-crystal nanocavity is demonstrated. The single-photon source features the effects of a photonic band gap, yielding a single-mode spontaneous emission coupling efficiency as high as beta = 92% and a linear polarization degree up to p = 95%. This appealing performance makes it well suited for practical implementation of polarization-encoded schemes in quantum cryptography.     

Scattering of partially polarized light by aligned atoms

A compact expression for the cross section of scattering of an arbitrarily polarized light by aligned atomic systems is obtained, in which the dependence on the geometric parameters and the Stokes parameters specifying the state of partial polarization of the incident radiation is represented in explicit form. The effect of atomic alignment and the processes of dissipation of the light energy on the polarization specific features and the angular distribution of the scattered light is investigated. In particular, it is shown that, if a dissipative channel is accessible, the angular distribution and the degree of linear polarization of scattered light depend on the degree of circular polarization of the incident radiation η₂. Dissipative processes also induce the circular polarization of the light scattered by aligned atoms when η₂=0.     

Linearly polarized, single-mode spontaneous emission in a photonic nanowire

We introduce dielectric elliptical photonic nanowires to funnel efficiently the spontaneous emission of an embedded emitter into a single optical mode. Inside a wire with a moderate lateral aspect ratio, the electromagnetic environment is largely dominated by a single guided mode, with a linear polarization oriented along the ellipse major axis. The resulting monomode spontaneous emission is maintained over a broad wavelength range, a key asset of this 1D photonic structure. Our theoretical analysis is completed by an experimental study of GaAs elliptical photonic wires with embedded InAs quantum dots. In particular, the fraction of collected photons with the desired linear polarization can exceed 95%.     

Spontaneous parametric light scattering in spatially inhomogeneous nonlinear media based on photonic crystals

The emission spectra of nonlinear media with periodical modulation of the second-order susceptibility that are based on synthetic opals infiltrated by Ba(NO₃)₂, LiIO₃, and KH₂PO₄ are studied using radiation with λ = 400 and 407 nm for excitation. The spectral angular distribution of the emission in the range of 420–650 nm is revealed, as well as the dependence of its spectrum on the photonic stop-band parameters and the exciting radiation characteristics. The emission spectrum of samples with a low dielectric contrast has the shape of a symmetric band with a maximum at 525 nm and a half-width of about 100 nm. The observed emission is interpreted as spontaneous parametric light scattering in a spatially inhomogeneous nonlinear medium.     

Circularly polarized lasing over wide wavelength range in spin-controlled (1 1 0) vertical-cavity surface-emitting laser

We investigated the emission wavelength dependence of the lasing polarization in a (1 1 0)-oriented vertical-cavity surface-emitting laser (VCSEL) with GaAs/AlGaAs quantum wells under optical spin injection at room temperature. Lasing was observed in the one circularly polarized mode over a wide wavelength range from 838 to 857 nm, in which a degree of circular polarization higher than 0.8 was maintained. The optical gain spectrum that contributed to the circularly polarized lasing is discussed based on the optical selection rules and the measured polarization-resolved photoluminescence spectra of the active layers.     

Purcell effect of GaAs quantum dots by photonic crystal microcavities

We fabricate photonic crystal slab microcavities embedded with GaAs quantum dots by electron beam lithography and droplet epitaxy. The Purcell effect of exciton emission of the quantum dots is confirmed by the micro photoluminescence measurement. The resonance wavelengths, widths, and polarization are consistent with numerical simulation results.     

Room-temperature single photon sources with definite circular and linear polarizations

We report experimental results of two room-temperature single photon sources with definite polarization based on emitters embedded in either cholesteric or nematic liquid crystal hosts. In the first case, a cholesteric 1-D photonic bandgap microcavity provides circular polarization of definite handedness of single photons from single colloidal semiconductor quantum dots (nanocrystals). In these experiments, the spectral position of the quantum dot fluorescence maximum is at the bandedge of a photonic bandgap structure. The host does not destroy fluorescence antibunching of single emitters. In the second case, photons with definite linear polarization are obtained from single dye molecules doped in a planar-aligned nematic liquid crystal host. The combination of sources with definite linear and circular polarization states of single photons can be used in a practical implementation of the BB84 quantum key distribution protocol.     

Phonon-mediated coupling of InGaAs/GaAs quantum-dot excitons to photonic crystal cavities

We demonstrate that the emission characteristics of site-controlled InGaAs/GaAs single quantum dots embedded in photonic crystal slab cavities correspond to single confined excitons coupled to cavity modes, unlike previous reports of similar systems based on self-assembled quantum dots. By using polarization-resolved photoluminescence spectroscopy at different temperatures and a theoretical model, we show that the exciton-cavity interaction range is limited to the phonon sidebands. Photon-correlation and pump-power dependence experiments under nonresonant excitation conditions further establish that the cavity is fed only by a single exciton.