基于辐照前1/f噪声的金属-氧化物-半导体场效应晶体管辐照退化模型

基于金属-氧化物-半导体场效应晶体管(MOSFET)噪声的载流子数涨落和迁移率涨落理论,建立了MOSFET辐照前1/f噪声参量与辐照后分别由氧化层陷阱和界面陷阱诱使阈值电压漂移之间的定量数学模型,并通过实验予以验证.研究结果表明,辐照诱生的氧化层陷阱通过俘获和发射过程与沟道交换载流子,在引起载流子数涨落的同时也通过库仑散射导致沟道迁移率的涨落,因此辐照前的1/f噪声幅值正比于辐照诱生的氧化层陷阱数.利用该模型对MOSFET辐照前1/f噪声与辐照退化的相关性从理论上 关键词： f噪声')" href="#">1/f噪声 辐照 金属-氧化物-半导体场效应晶体管 陷阱     

High frequency noise of epitaxial graphene grown on sapphire

Microwave noise technique is applied to study in‐plane electronic properties of epitaxial graphene grown on sapphire by chemical vapor deposition and subjected to high electric field applied in the plane. The noise spectrum is measured in the field direction at room temperature. While a 1/f^1.25‐type dependence is observed in the 200 MHz–2.5 GHz band, a shot noise contribution is resolved at 10 GHz. The shot noise is possibly associated with hole jumps across the potential barriers located in the graphene layer. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of cobalt-60 gamma irradiation on graphene: Raman and field emission investigations

Electrophoretically deposited graphene (HG) on silicon is irradiated using a cobalt-60 gamma radiation source with the radiation dose up to 22.7 kGy. The effect of gamma irradiation on the field emission current noise behavior of HG is investigated. The power spectra of pristine and irradiated HG exhibit 1/f^α type of noise, with α ～ 0.8. The magnitude of noise power is observed to increase with the radiation dose. The variations in the turn on field and noise power in the emission current are attributed to the structural modifications of HG, as revealed from the field emission scanning electron microscopic and Raman spectroscopic studies.     

Nonvolatile unipolar resistive switching in ultrathin films of graphene and carbon nanotubes

We report unipolar resistive switching in ultrathin films of chemically produced graphene (reduced graphene oxide) and multiwalled carbon nanotubes. The two-terminal devices with yield >99% are made at room temperature by forming continuous films of graphene of thickness ∼20 nm on indium tin oxide coated glass electrode, followed by metal (Au or Al) deposition on the film. These memory devices are nonvolatile, rewritable with ON/OFF ratios up to ∼ 10⁵ and switching times up to 10 μs. The devices made of MWNT films are rewritable with ON/OFF ratios up to ∼400. The resistive switching mechanism is proposed to be nanogap formation and filamentary conduction paths.     

Minimal conductivity in bilayer graphene

Using the Landauer formula approach, it is proven that minimal conductivity of order e²/h found experimentally in bilayer graphene is an intrinsic property. For the case of ideal crystals, the conductivity turns out to be equal to e²/2h per valley per spin. A zero-temperature shot noise in bilayer graphene is considered and the Fano factor is calculated. Its value 1–2/π is close to the value 1/3 found earlier for single-layer graphene.     

Thermal properties of graphene and multilayer graphene: Applications in thermal interface materials

We review the thermal properties of graphene and multilayer graphene, and discuss graphene’s applications in thermal management of advanced electronics and optoelectronics. A special attention is paid to the use of the liquid-phase-exfoliated graphene and multilayer graphene as the fillers in the thermal interface materials. It has been demonstrated that addition of an optimized mixture of graphene and multilayer graphene to the composites with different matrix materials produces the record-high enhancement of the effective thermal conductivity at the small filler loading fraction (f≤10 vol%). The thermal conductivity enhancement due to the presence of graphene in the composites has been observed for a range of matrix materials used by industry. The hybrid composites where graphene is utilized together with metallic micro- and nanoparticles allow one to tune both the thermal and electrical conductivity of these materials. Theoretical considerations indicate that the graphene-based thermal interface materials can outperform those with carbon nanotubes, metal nanoparticles and other fillers owing to graphene’s geometry, mechanical flexibility and lower Kapitza resistance at the graphene–base material interface.     

Electrical transport and noise in semiconducting carbon nanotubes

We investigate electrical transport and noise in semiconducting carbon nanotubes. By studying carbon nanotube devices with various diameters and contact metals, we show that the ON-currents of CNFETs are governed by the heights of the Schottky barriers at the metal/nanotube interfaces. The current fluctuations are dominated by 1/f noise at low-frequencies and correlate with the number of transport carriers in the device regardless of contact metal.     

Decorating reduced graphene oxide with Co3O4 hollow spheres and their application in supercapacitor materials

In this paper, a composite of reduced graphene oxide decorated by Co₃O₄ hollow spheres (Co₃O₄/RGO composite) has been synthesized by a one-pot solvothermal method. The samples are characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and Fourier transform infrared spectroscopy (FT-IR), Raman spectra and so on. The results demonstrate that the Co₃O₄ hollow spheres with good purity and homogenous size are absorbed onto the reduced graphene oxide sheets as spacers to prevent the aggregation of the graphene oxide sheets. Furthermore, the well electrochemical properties demonstrate that the Co₃O₄/RGO composite might have potential applications as electrode materials for supercapacitors.     

Magnetic resonance evidence of manganese–graphene complexes in reduced graphene oxide

We report on EPR and NMR study of reduced graphene oxide (RGO) produced by the Hummers method. We show that this RGO sample reveals isolated Mn²⁺ ions, which originate from potassium permanganate used in the process of the sample preparation. These ions form paramagnetic charge-transfer complexes with the graphene planes and contribute to the ¹³C spin–lattice relaxation.     

Non-equilibrium generation-recombination noise in InGaAs/InP photodiodes

We report on temperature (77 to 300 K) and voltage dependent low frequency (100 Hz to 100 kHz) noise behavior of InGaAs/InP photodiodes in non-equilibrium steady state. In addition to common white, 1/f, and Lorentz noise we are able to observe for the first time minima and maxima in the photocurrent noise spectra. The recombination of a pair of free carriers through a recombination center at the heterointerface provides the correlation between the electron and hole ensembles necessary to explain the observed noise reduction.     

The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene

Abstract

The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on anSiO₂/Si substrate have been investigated using the Shubnikov–de Haas (SdH) oscillations technique. The magnetoresistance measurements were performed in the temperature range between 1.8 and 43 K and at magnetic fields up to 11 T. The 2D carrier density and the Fermi energy have been determined from the period of the SdH oscillations. In addition, the in-plane effective mass as well as the quantum lifetime of 2D carriers have been calculated from the temperature and magnetic field dependences of the SdH oscillation amplitude. The sheet carrier density (1.42 × 10¹³ cm^?2 at 1.8 K), obtained from the low-field Hall Effect measurements, is larger than that of 2D carrier density (8.13 × 10¹² cm^?2). On the other hand, the magnetoresistance includes strong magnetic field dependent positive, non-oscillatory background magnetoresistance. The strong magnetic field dependence of the magnetoresistance and the differences between sheet carrier and 2D carrier density can be attributed to the 3D carriers between the graphene sheet and the SiO₂/Si substrate.     

Vibrational properties of graphene and graphene layers

The phonon dispersions of graphene and graphene layers are theoretically investigated within fifth‐nearest‐neighbor force‐constant approach. Based on their symmetry groups, the number of Raman‐ and infrared‐active modes at the Γ point is given. Interatomic force constants are recalculated by fitting them to experimental phonon energy dispersion curves. Wavenumbers of optically active modes are presented as a function of number of layers (n). Our calculated results reproduce well the experimental data of G peak for graphene (1587 cm⁻¹) and graphite (1581.6 cm⁻¹) and clearly give the relation that ω_G = 1581.6 + 11/(1 + n^1.6). Copyright © 2009 John Wiley & Sons, Ltd.     

A high-voltage lithium-ion battery prepared using a Sn-decorated reduced graphene oxide anode and a LiNi<Subscript>0.5</Subscript>Mn<Subscript>1.5</Subscript>O<Subscript>4</Subscript> cathode

This paper describes the preparation and characterization of a high-voltage lithium-ion battery based on Sn-decorated reduced graphene oxide and LiNi_0.5Mn_1.5O₄ as the anode and cathode active materials, respectively. The Sn-decorated reduced graphene oxide is prepared using a microwave-assisted hydrothermal synthesis method followed by reduction at high temperature of a mixture of (C₆H₅)₂SnCl₂ and graphene oxide. The so-obtained anode material is characterized by thermogravimetric analysis, X-ray diffraction, scanning electron microscopy, and electron diffraction spectroscopy. The LiNi_0.5Mn_1.5O₄ is a commercially available product. The two materials are used to prepare composite electrodes, and their electrochemical properties are investigated by galvanostatic charge/discharge cycles at various current densities in lithium cells. The electrodes are then used to assemble a high-voltage lithium-ion cell, and the cell is tested to evaluate its performance as a function of discharge rate and cycle number.     

Current noise and long time tails in biased disordered random walks

We calculate the mean velocity and the velocity correlation function for a random walk with a uniform bias on a disordered chain. We find a new long time tail in the velocity correlation function due to the combined effects of the bias and of the disorder in the site variables. This long time tail persists to a low-frequency cutoff inversely proportional to the square of the bias. By associating the velocity correlation function with the spectrum of current fluctuations, we calculate the excess low-frequency current noise associated with this long time tail. The spectrum of current fluctuations goes as(I ²/N)f ^–1/2, whereI is the DC current,N is the number of charge carriers, andf is the frequency. The possible connection to 1/f noise is discussed. The calculation is done by a perturbation expansion in the strength of the disorder, but is shown to be exact to all orders for weak enough bias.Supported by a fellowship of the German Academic Exchange Service (DAAD).Supported by the National Science Foundation through Grant No. DMR-8108328 and through the Cornell Materials Science Center.     

Structural and magnetic properties of reduced graphene oxide-TiO2 nanoflower composite

We have focused on the structural and magnetic properties of hazardous acid free synthesis of anatase titanium dioxide (TiO₂) phase nanoflower and reduced graphene oxide-TiO₂ (rGO-TiO₂) nanocomposite using hydrothermal process. Because, strong acids free synthesis is environmental friendly and reduce overall cost of synthesized samples. In the synthesis of rGO-TiO₂, synthesized TiO₂ nanoflower and graphene oxide (GO) were used as reagents. The resulting materials have analyzed using different techniques such as, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and Fourier Transformation Infrared spectrophotometer for confirmation of flower like morphology, crystalline phase and chemical composition. Moreover, VSM analysis has revealed the ferromagnetism induced in the rGO-TiO₂ composite at room temperature. The values of saturation magnetization were found to be 0.002 and ~ 0.243±0.04 emu/g for TiO₂ nanoflower and rGO-TiO₂ nanocomposite, respectively. In comparison of pure TiO₂, rGO-TiO₂ exhibited larger magnetization at room temperature. This is because presences of various edge and site defects such as topological and point defects like vacancies, which create localized unpaired spins in reduced graphene oxide (rGO), induce the ferromagnetism behavior in rGO-TiO₂ nanocomposite.     

Real-time monitoring of graphene oxide reduction in acrylic printable composite inks

This work reports the electrical characterization of a water-based graphene oxide/acrylic composite material, which was directly inkjet printed to fabricate dissipative patterns. The graphene oxide filler, which is strongly hydrophilic due to its heavily oxygenated surface and can be readily dispersed in water, was reduced by UV irradiation during photo-curing of the polymeric matrix. The concurrent polymerization of the acrylic matrix and reduction of graphene oxide filler was demonstrated by real-time resistance measurements during UV light irradiation. The presence of graphene filler allowed decreasing the resistance of the pure polymeric matrix by nearly five orders of magnitude. This was explained by the fact that clusters of reduced graphene oxide inside the polymer matrix act as preferential pathways for the mobility of charge carriers, thus leading to an overall decrease of the material’s resistance.     

Shot noise in magnetic field modulated graphene superlattice

We investigate the shot noise properties in a monolayer graphene superlattice modulated by N parallel ferromagnets deposited on a dielectric layer. It is found that for the antiparallel magnetization configuration or when magnetic field is zero the new Dirac-like point appears in graphene superlattice. The transport is almost forbidden at this new Dirac-like point, and the Fano factor reaches its maximum value 1/3. In the parallel magnetization configuration as the number of magnetic barriers increases, the shot noise increases. In this case, the transmission can be blocked by the magnetic–electric barrier and the Fano factor approaches 1, which is dramatically distinguishable from that in antiparallel alignment. The results may be helpful to control the electron transport in graphene-based electronic devices.     

金属氧化物半导体场效应管热载流子退化的1/fγ噪声相关性研究

研究了金属氧化物半导体(MOS)器件在高、中、低三种栅压应力下的热载流子退化效应及其1/f^γ噪声特性.基于Si/SiO₂界面缺陷氧化层陷阱和界面陷阱的形成理论,结合MOS器件1/f噪声产生机制,并用双声子发射模型模拟了栅氧化层缺陷波函数与器件沟道自由载流子波函数及其相互作用产生能级跃迁、交换载流子的具体过程.建立了热载流子效应、材料缺陷与电参量、噪声之间的统一物理模型.还提出了用噪声参数Sf ^{关键词： 金属氧化物半导体场效应管 热载流子 fγ噪声')" href="#">1/fγ噪声}     

Fabrication of a graphene field effect transistor array on microchannels for ethanol sensing

A new approach to the fabrication of back-gated graphene FET (field effect transistor) arrays on microchannels was investigated. Narrow walls fabricated on a substrate with SU-8 (a negative photoresist), with top metal electrodes were pressed onto another silicon/SiO₂ substrate with predeposited graphene pieces such that the electrodes came into contact with graphene pieces and formed the source and drain contact. The SU-8 narrow walls with the top metal layer were fabricated by the conventional lift-off process. The graphene pieces were reduced chemically from graphite oxide. The I_DS changed immediately by more than 17% when the device was exposed to an ethanol atmosphere. The current recovered very well after the ethanol gas was pumped out. The SU-8 microchannels served as gas flow passages that helped the ethanol vapor reach the sensitive region of the device: the graphene channel. This work provides a convenient way of constructing back-gated graphene FETs for sensing applications. This method could potentially be scaled up for mass production.     

The enigma of the quantum Hall effect in graphene

We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.