Element-specific hard X-ray micro-magnetometry of magnetic modifications in Co–Pt dots fabricated by ion etching

We developed a micro-magnetometry with a 2.5 μm spatial resolution based on micro X-ray magnetic circular dichroism (XMCD) technique in order to study magnetic properties of dot arrays for bit-patterned media. This micro-magnetometer was applied to the magnetic characterization of Co–Pt dot arrays fabricated by ion beam etching. As the dot size became small, the intensity of XMCD drastically decreased for dots fabricated by Ga-focused ion beam. This suggested that the dot edges were damaged magnetically by implantation of Ga ions. The damaged width of the dot edge was estimated to be about 13 nm from the decrease in XMCD intensities. This damaged edge width agreed with the ion-implanted area estimated by Monte-Carlo simulation. The less-damaged effect of Ar ion etching was verified by the XMCD measurement of Co–Pt dots with diameter of 20 and 70 nm. It was concluded that ions with inertness, lower energy and smaller atomic number should be used to fabricate dot arrays with an areal density of 1 Tbit/in².     

Understanding magnetic properties of arrays of small FePt dots with perpendicular anisotropy

FePt dot arrays with dot size down to 15 nm are fabricated by film annealing and patterning. The array coercivity shows an increase with dot size decreasing from 100 to 30 nm, and a slight reduction for the 15 nm dot sample. Annealing these dot arrays at higher temperatures results in large enhancements in the coercivities, except the 15 nm dot array where the coercivity increases a little. Micromagnetic models of a 15 nm FePt dot with uniform and nonuniform edges of soft magnetic defects and with inside defects are calculated to reveal the microstructure origins of the dot magnetic properties. It is found that the volume fraction of the L1₀-phase FePt with perpendicular c-axis orientation is about 50% in the dot and the switching field distribution of the dot array can be influenced significantly by the defect arrangement in the dots.     

Spin-polarized transport in ferromagnet/Rashba quantum dot/ferromagnet system

The transport properties of the Datta and Das's spin transistor with the center normal region (or the quantum dot) having Rashba spin–orbit interaction and electron–electron (e–e) interaction U are investigated. We find while intra-dot level is near or above the chemical potential of the leads, the modulation efficiency of this spin transistor almost is not influenced by U. On the other hand, when the level is below the chemical potential, e–e interaction U may affect the modulator efficiency, because in this case the existence of e–e interaction can change the transport properties of the quantum dot. But the modulation efficiency still keep enough large and the spin transistor can effectively work.     

Origin of ferromagnetism via hole doping in SnO2: First-principles calculation

First-principles calculations are carried out in order to find the ferromagnetism dependence on the number of holes substituted for Sn sites. The results show that strong localization of defect states of the p bands of the oxygen atoms near the dopants favors high-spin states and local moment formation. These states appear to be ferromagnetically coupled with a rather long-range magnetic interaction, resulting in a half-metallic ferromagnetic ground state for the whole systems. Analysis of the total energies indicates that the induced well-confined ferromagnetism in the oxygen p orbitals due to hole doping is quite possible and easily controlled in these systems, which indicate a new way to develop a half-metallic ferromagnet in nonmagnetic d⁰ oxides.     

Transport through a quantum dot subject to spin and charge bias

Spin and charge transport through a quantum dot coupled to external nonmagnetic leads is analyzed theoretically in terms of the non-equilibrium Green function formalism based on the equation of motion method. The dot is assumed to be subject to spin and charge bias, and the considerations are focused on the Kondo effect in spin and charge transport. It is shown that the differential spin conductance as a function of spin bias reveals a typical zero-bias Kondo anomaly which becomes split when either magnetic field or charge bias are applied. Significantly different behavior is found for mixed charge/spin conductance. The influence of electron-phonon coupling in the dot on tunneling current as well as on both spin and charge conductance is also analyzed.     

Tunable supercurrent through a double Aharonov–Bohm interferometer

The supercurrent through a double Aharonov–Bohm interferometer formed by parallel-coupled four quantum dots is investigated theoretically. The possibility of controlling the supercurrent of the system is explored by tuning the interdot coupling, dot energy levels, and magnetic flux treading the ring connecting dots and leads. Whether the supercurrent sign can be changed depends not only on the magnetic flux but also on the quantum dot energy levels. By tuning the quantum dot energy levels, the behavior of the supercurrent shows swap effects, which might be used to design a qubit. It is also found that the oscillation period of the supercurrent with respect to the magnetic flux depends on the ratio of the two parts fluxes.     

Mesoscopic Fano effect modulated by Rashba spin–orbit coupling and external magnetic field

By employing non-equilibrium Green's function method, the mesoscopic Fano effect modulated by Rashba spin–orbit (SO) coupling and external magnetic field has been elucidated for electron transport through a hybrid system composed of a quantum dot (QD) and an Aharonov–Bohm (AB) ring. The results show that the orientation of the Fano line shape is modulated by the Rashba spin–orbit interaction kRL$k_{R}L$ variation, which reveals that the Fano parameter q will be extended to a complex number, although the system maintains time-reversal symmetry (TRS) under the Rashba SO interaction. Furthermore, it is shown that the modulation of the external magnetic field, which is applied not only inside the frame, but also on the QD, leads to the Fano resonance split due to Zeeman effect, which indicates that the hybrid is an ideal candidate for the spin readout device.     

Ab initio study of electronic structures and magnetism in ZnMnTe and CdMnTe diluted magnetic semiconductors

In this work, we aimed to examine the spin-polarized electronic band structures, the local densities of states as well as the magnetism of ZnMnTe- and CdMnTe-diluted magnetic semiconductors (DMSs) in the ferromagnetic phase, and with 25% of Mn. The calculations are performed by the recent ab initio full potential augmented plane waves plus local orbitals (FP−L/APW+lo) method within the spin-polarized density-functional theory and the local spin density approximation. We have determined the exchange splittings produced by the Mn d states: Δ_x(d) and Δ_x(pd), and we found that the effective potential for the minority spin is more attractive than that for the majority spin. Also, we show the nature of the bonding from the charge spin-densities calculations, and we calculate the exchange constants N₀α and N₀β, which mimics a typical magneto-optical experiment. The calculated total magnetic moment is found to be equal to 5μ_B for both DMSs. This value indicates that every Mn impurity adds no hole carriers to the perfect ZnTe and CdTe crystals. Furthermore, we found that p–d hybridization reduces the local magnetic moment of Mn and produces small local magnetic moments on the nonmagnetic Te, Zn and Cd sites.     

Magnetic memory effects in triglycine sulfate ferroelectric crystals

The effect of a magnetic field on the processes of relaxation of the defect structure relaxation in a triglycine sulfate (TGS) ferroelectric (nonmagnetic) crystal has been observed for the first time. The atomic-force microscopy study has shown that the application of a static weak magnetic field (2 T, 20 min) significantly changes the size distribution of defect nanoclusters characteristic of TGS. Previously known macroscopic aftereffects of the magnetic field in TGS (slow relaxation of the dielectric susceptibility, symmetrization of P–E dielectric hysteresis loops, etc.) can be explained by the redistribution of pinning centers of domain walls caused by the magnetically induced reconfiguration of the defect structure.     

Ferromagnetic clusters induced by a nonmagnetic random disorder in diluted magnetic semiconductors

In this work, we analyze the nonmagnetic random disorder leading to a formation of ferromagnetic clusters in diluted magnetic semiconductors. The nonmagnetic random disorder arises from randomness in the host lattice. Including the disorder to the Kondo lattice model with random distribution of magnetic dopants, the ferromagnetic–paramagnetic transition in the system is investigated in the framework of dynamical mean-field theory. At a certain low temperature one finds a fraction of ferromagnetic sites transiting to the paramagnetic state. Enlarging the nonmagnetic random disorder strength, the paramagnetic regimes expand resulting in the formation of the ferromagnetic clusters.     

Simulation of the electrical characteristics of a one-dimensional quantum dot array

A quantum dot array, consisting of Au dots, was prepared by the linear aggregation technique and assembled between two electrodes. We study the voltage–current characteristic of the quantum dot array, using a Non-Equilibrium Green’s Function (NEGF) model based on the Keldysh formalism. The results of our simulation and experimental data are compared. The simulated voltage–current curve is a reasonable fit with the measured data. It shows that the present model can be used to study quantum dot arrays. Furthermore, our results indicate that the electrical characteristics of an Au dot array are directly related to the coupling parameters.     

Effect of γ-ray irradiation on the magnetic properties of NdFeB and Fe–Cr–Co permanent magnets

The effect of γ-ray irradiation on the magnetic properties of NdFeB and Fe–Cr–Co permanent magnets has been investigated. The magnetic flux loss of two kinds of magnets before and after irradiation was measured. Results show that the effect of γ-ray irradiation on the magnetic properties of sintered NdFeB is not so obvious as that on Fe–Cr–Co magnet. Irradiation-induced damage from γ-ray for the Fe–Cr–Co magnets was characterized for the first time. The decline of permanent magnetic properties of Fe–Cr–Co magnet induced by γ-ray irradiation is reversible except for the maximum energy product (BH)_max. The difference of coercivity mechanism between these two kinds of permanent magnets is responsible for the different dependence of magnetic properties loss induced by γ-ray irradiation.     

Magnetization of beryllium oxide in the presence of nonmagnetic impurities: Boron,carbon, and nitrogen

The electronic and magnetic states of a nonmagnetic insulator, namely, beryllium oxide, doped with nonmagnetic 2p elements (boron, carbon, and nitrogen) are studied using the density functional theory. The spin polarization of the 2p impurity states, as well as the transition of the doped BeO:(B,C,N) systems to the states of semiconducting or half-metallic magnets, is observed. The prospects for creating new magnetic materials by doping nonmagnetic insulators with nonmagnetic p impurities are discussed.     

Magnetic properties of hexagonal ferrite dot arrays

Patterned magnetic media have been considered as one of the promising candidates for future ultra-high-density magnetic recording. In this paper, a new kind of patterned medium based on hexagonal ferrite have been studied. We have successfully fabricated strontium ferrite dot arrays by electron beam lithography. Their magnetic properties are evaluated by magnetic force microscopy (MFM) and superconducting quantum interference device (SQUID). The results show the dot arrays have perpendicular anisotropy. Dots with the lateral size larger than 500 nm show multidomain magnetization configuration in the initial magnetization state. However, with dot size decreased to 500 nm, all the dots have single-domain configuration both in the initial magnetization state and remanent magnetization state.     

Damping and ferromagnetic resonance linewidth broadening in nanocrystalline soft ferromagnetic Fe–Co–Hf–N films

In order to describe high-frequency damping mechanisms of ferromagnetic films by means of the imaginary part of the frequency-dependant permeability, CMOS compatible ferromagnetic Fe₃₆Co₄₄Hf₉N₁₁ films were deposited by reactive r.f. magnetron sputtering on oxidised 5×5 mm²×380 μm (1 0 0)-silicon substrates with a 6-in. Fe₃₈Co₄₇Hf₁₅ target, as well as magnetic field annealing between 300 and 600 °C. An in-plane uniaxial anisotropy of around 4.5 mT as well as an excellent soft magnetic behaviour with a saturation polarisation of approximately 1.4 T could be observed after heat treatment at the above-mentioned temperatures, which drives these films to a high-frequency suitability. Ferromagnetic resonance frequencies of approximately up to 2.4 GHz could be obtained. The frequency-dependant permeability was measured with a broadband permeameter. Depending on the heat treatment, an increase of the full-width at half-maximum (FWHM) of the imaginary part of the frequency-dependant permeability is discussed in terms of two-magnon scattering, anisotropy-type competition and local resonance generation through predominant grain growth causing magnetisation and anisotropy inhomogeneities in the magnetic films. The grain size of the films was determined by (HRTEM) imaging and amounts from a few nanometres for films heat treated at 300 °C to more than 10 nm at 600 °C where the FWHM Δf_eff and the Landau–Lifschitz–Gilbert equation damping parameter α_eff increases with d_nm² and d_nm (e.g. d_nm is the grain diameter of the nonmagnetic Hf–N phase), respectively.     

Magnetization reversal induced by irregular shape nanodots in square arrays

Ni₈₀Fe₂₀ nanodots in square arrays of irregular shape (C_1h(m) and x-, y-translations symmetry) and circular shape (D_4h (4/mmm)) nanodots of the same area were fabricated under controlled exposure conditions by e-beam lithography, ion beam sputtering coating and further lift-off. The center-to-center nearest dot distances was 700 nm in all the measured arrays. An unpatterned film was fabricated in the same IBS batch for comparison purposes. Structures and magnetic properties were characterized using AFM, SEM and high-sensitivity focused magneto-optical Kerr effect (MOKE). The mechanism of the magnetization reversal of arrays is discussed in two different scenarios: vortex and single-domain. It has been shown that circular dots reverse only through vortex configuration whereas the irregular does either via single-domain and vortex configuration, depending of the dot size. Variable domain phases are confirmed by OOMMF (Object Oriented Micromagnetic Framework) micromagnetic simulations.     

Intrinsic magnetic inhomogeneity of Eu substituted La0.7Pb0.3Mno3 single crystals

The study of magnetic and magnetotransport properties of the crystals of (La_1−yEu_y)_0.7Pb_0.3MnO₃ system has been carried out. Eu ions enter the crystals being in trivalent nonmagnetic state. Europium ions possessing of smaller ionic radius in comparison with La ions, induce local distortions of Mn–O–Mn bonds in the system that cause random distribution of magnetic exchange interactions in magnitude and, probably, in sign. The competition of magnetic interactions leads to the appearance of the inhomogeneous magnetic state in the crystals. The enhancement of concentration of Eu ions results in decrease of the Curie temperature and broadening of the inhomogeneous magnetic state area. At y=0–0.4 the coexistence of the paramagnetic phase with conductivity of the polaronic type and the ferromagnetic metallic phase is observed in a bounded temperature interval both above and below T_C. Below T_C the increasing of y up to 0.6 induces the magnetic state representing the coexistence of two different FM phases. These phases are spatially separated due to frustration of FM and AFM exchange interactions on phase boundaries. Above T_C, up to 1.6T_C ferromagnetic clusters exist in a paramagnetic matrix similar to the case of samples with y=0–0.4. Concerning electric properties, the samples with y=0–0.4 reveal the metal–insulator transition at temperature that practically coincides with T_C. The sample with y=0.6 has conductivity of insulator character up to the lowest temperatures. For all investigated compositions y=0–0.6 the CMR effect is observed in the area where the inhomogeneous magnetic state exists. The effect is determined by different conductivity of the coexisting phases, as well as by sensitivity of the inhomogeneous state to external magnetic field.     

Coherent Exchange Cluster Approach for two-dimensional disordered Heisenberg-spin system

The Coherent Exchange Cluster Approach, developed within two proceeding papers, is applied to dilute quasi two-dimensional Heisenberg spin-systems, consisting of one magnetic and one nonmagnetic alloying component. The level density of spin wave excitations is discussed for concentrations of the magnetic component, which are larger than the critical value, where all excitations become localized. The propagation of the excitations through the disordered system is described by an effective Heisenberg-Hamiltonian with a complex and energy-dependent exchange integral \(\tilde J\) (E). This quantity is determined by the postulate, that the most important matrix elements of the scatteringT-matrix should vanish after averaging over the possible configurations of a scattering cluster, consisting of a central lattice site and its four nearest neighbours. Numerical results are obtained both for the “dilute bond” and “site” problems, respectively; in both cases, the results agree rather well with existing computer simulations for 30 × 30 spin arrays. For the “site” problem, it is necessary to introduce a coherent single ion anisotropy field in addition to the coherent exchange integral: Results in agreement with the analyticity requirements are obtained by a careful choice of the additional selfconsistency equation.     

Multi-functional properties of iron-based ferromagnetic shape memory ribbons

This paper presents measured multi-functional properties of Fe–Mn–Cr–Si–Tb–B ribbons developed by means of the melt-spinning technique in air. The alloys are multi-functional materials, which have both ferromagnetic and shape memory properties. If we can simultaneously improve the material properties, the applications of the shape memory alloys will be widened dramatically in the field of the electromagnetic sensors and actuators. The base shape memory material, Fe–Mn–Si alloy, is nonmagnetic due to its high manganese content (28–34 Mn, 4–6.5Si wt%). In order to improve ferromagnetic function of the Fe–Mn–Si alloy, we have investigated the addition of rare earth elements. Addition of about 0.7–1.0 wt% Tb was effective in increasing the saturation magnetization. However, ductility of the samples was not good and it was difficult to evaluate the shape memory properties with shape recovery strain measurements. The detailed magnetic and shape memory properties of the Fe–Mn–Cr–Si–Tb–B alloys are discussed in this paper.     

Advanced granular-type perpendicular recording media

We introduce our recent experimental results for three blocked layers for currently used perpendicular recording media; a recording layer (RL: for recording), a soft magnetic underlayer (SUL: magnetic flux path in writing), and a nonmagnetic intermediate layer (NMIL: underlayer of RL and separation layer between RL and SUL). For the NMIL, uniaxial crystallographic symmetry is an essential requirement for suppression of variant growth of magnetic grains in granular-type RL. From this view point, AlN with wurtzite structure and materials with pseudo-hcp structure, which means fcc structure with stacking faults, were found to be effective. For the SUL, disordered hcp CoIr with negative K_u were found to well suppress both spike noise and track erasure due to a wide distribution of magnetic flux under the return yoke in writing and formation of a Neel wall instead of a Bloch wall in the SUL. For the RL, positive-/negative-K_u stacked media with incoherent switching mode was found to be effective in order to solve the recent write-ability problem for high K_u RL material with high thermal stability. Applying all these items, an advanced medium concept with the stacking structure of “CoPtCr-oxide/CoIr-oxide/CoIr/pseudo-hcp nonmagnetic layer/substrate” is very promising from the view point of (1) switching field reduction of a RL with high K_u material, (2) conventional amorphous SUL free, and (3) conventional NMIL free.