Interface exciton modes and superconducting transition temperature of a metal in contact with a semiconductor

The problem of superconductivity in a metal-semiconductor system has been studied, using the dielectric formulation of superconductivity. The charge redistribution due to the quantum penetration of the metallic electrons to the semi-conductor side is approximated by a simple exponential function. The interface exciton modes are obtained within the framework of classical electrostatics, and their effect in modifying the effective electron-electron interaction near the interface is investigated. It is found that the strength of the excitonic term is small, and by itself, insufficient to lead to superconductivity. Nevertheless, it can alter the superconducting transition temperature of a metal, if it is already superconducting due to some other mechanism. This has been studied as a function of the various parameters entering in the problem.     

Goos–H?nchen shift at an interface of a composite material: effects of particulate clustering

The Goos–H?nchen (GH) shift of a p-polarized light beam reflected from an interface of a composite material of particulate metals in a dielectric host is studied theoretically using effective medium approaches, with focus on the effects due to the clustering of the metal particles. With application of a fractal-clustering model, it is shown that the composite can have optically metallic behavior even for relatively low volume fraction of metal when clustering takes place, with appreciable negative GH shifts to take place for light of long wavelengths close to grazing incident angles. Furthermore, we confirm that large reflectance is always accompanied with this metal behavior, thus rendering these shifts easily observable.     

Dielectric enhancement of excitons in semiconducting quantum wires

The energy of the exciton ground state in a semiconducting cylindrical quantum wire surrounded by a dielectric has been calculated using a variational technique accounting for the effect of dielectric enhancement. The effect of dielectric enhancement in such a system has been clearly demonstrated. Exciton parameters have been calculated for an intercalated leadiodide-based quasi-one-dimensional semiconductor and GaAs wires in asbestos nanotubes. Zh. éksp. Teor. Fiz. 111, 274–282 (January 1997)     

Quantized longitudinal exciton-polaritons in periodic metal–semiconductor nanostructures

We theoretically investigate the optical properties of one-dimensional photonic crystals composed of two alternating layers, namely a semiconductor film and a metallic one. The nonlocal optical response of the semiconductor is here described by using a resonant excitonic dielectric function, whereas the local response function of the metal film is modeled with Drude formula. We calculate optical spectra of the metal–semiconductor 1D photonic crystal for both s- and p-polarization geometries. In both cases the spectra exhibit a rich resonance structure due to the coupling of size-quantized excitons inside the semiconductor film with light. We show the difference between s- and p-polarization reflectivity as the angle of incidence is increased. In the p-polarization geometry, besides transverse exciton-polariton modes, longitudinal polarization waves are excited producing additional spectral resonances. The spectra become radically different when the frequency corresponding to the minimum of the first photonic pass-band is close to the exciton resonance, since such a frequency is distinct for s- and p-polarized modes. We also show how reflectivity spectra for both polarizations are modified with varying the metal filling fraction which controls the width of the gap below the lowest frequency band.     

Linear and nonlinear excitonic absorption in semiconducting quantum wires crystallized in a dielectric matrix

Spectra of linear and nonlinear absorption of GaAs and CdSe semiconducting quantum wires crystallized in a transparent dielectric matrix (inside chrysotile-asbestos nanotubes) have been measured. Their features are interpreted in terms of excitonic transitions and filling of the exciton phase space in the quantum wires. The theoretical model presented here has allowed us to calculate the energies of excitonic transitions that are in qualitative agreement with experimental data. The calculated exciton binding energies in quantum wires are a factor of several tens higher than in bulk semiconductors. The cause of this increase in the exciton binding energy is not only the size quantization, but also the “dielectric enhancement,” i.e., stronger attraction between electrons and holes owing to the large difference between permittivities of the semiconductor and dielectric matrix. Zh. éksp. Teor. Fiz. 114, 700–710 (August 1998)     

Electron-hole diagrams versus exciton diagrams: the simplest problem on interacting excitons

We study the interaction of an exciton with a distant metal, which is the simplest problem on interacting excitons: The semiconductor and metal electrons being “different” species, we do not have to worry about the tricky consequences of Pauli exclusion between identical carriers, which appear in any other problem on interacting excitons. We show how the exciton absorption, in the presence of semiconductor-metal interaction, can be derived in a very simple and transparent way from an exciton diagram procedure, provided that we use the appropriate exciton-metal interaction vertex, which contains the scattering from an exciton state to another exciton state under a Coulomb excitation. We also show that the resolution of this problem using standard electron-hole diagrams is dreadfully complicated at the lowest order in the semiconductor-metal interaction already, preventing a full calculation of the exciton-metal coupling from this usual technique. Received 26 February 2001     

Phonon and electron-hole plasma effects on binding energies of excitons in wurtzite GaN/In<Subscript>x</Subscript>Ga<Subscript>1−x</Subscript>N quantum wells

The binding energy of an exciton screened by the electron-hole plasma in a wurtzite GaN/In _x Ga_1−x N quantum well (in the case of 0.1 < x < 1 within which the interface phonon modes play a dominant role) is calculated including the exciton-phonon interaction by a variational method combined with a self-consistent procedure. The coupling between the exciton and various longitudinal-like optical phonon modes is considered to demonstrate the polaronic effect which strongly depends on the exciton wave function. All of the built-in electric field, the exciton-phonon interaction and the electron-hole plasma weaken the Coulomb coupling between an electron and a hole to reduce the binding energy since the former separates the wave functions of the electron and hole in the z direction and the later two enlarge the exciton Bohr radius. The electron-hole plasma not only restrains the built-in electric field, but also reduces the polaronic effect to the binding energy.     

Splitting the surface wave in metal/dielectric nanostructures

We investigate a modified surface wave splitter with a double-layer structure, which consists of symmetrical metallic grating and an asymmetrical dielectric, using the finite-difference time-domain (FDTD) simulation method. The metal/dielectric interface structure at this two-side aperture can support bound waves of different wavelengths, thus guiding waves in opposite directions. The covered dielectric films play an important role in the enhancement and confinement of the diffraction wave by the waveguide modes. The simulation result shows that the optical intensities of the guided surface wave at wavelengths of 760-nm and 1000-nm are about 100 times and 4～5 times those of the weaker side, respectively, which means that the surface wave is split by the proposed device.     

Two-channel waveguide modulator based on surface wave propagating in a semiconductor-metal thin-film structure

The results of theoretical investigations of two-channel waveguide modulator based on Surface Wave (SW) propagation are presented. The structure studied consists of twon-type semiconductor waveguide channels separated from each other by a dielectric gap and coated by a metal. The SW propagates at the semiconductormetal interface across an external magnetic field which is parallel to the interface. An external de voltage is applied to the metal surface of one channel to provide a small phase shift between two propagating modes. In a coupled mode approximation, two possible regimes of operation of the structure, namely as a directional coupler and as an electro-optical modulator, are considered. Our results suggest new applications in millimeter and submillimeter wave solid-state electronics and integrated optics.     

Guided modes in anisotropic metal bound waveguides

The dispersion relation determining guided modes in electro-optic (EO) waveguides sandwiched by metallic ground- and cover-layer electrodes has been deduced. The metal generally has a complex dielectric constant ε = ε′ + iε′′, with ε′ < 0 and ε′′ > 0. It is shown that for the reflection at a waveguide/metal interface, when −ε′ ≫ ε′′, the phase shifts on the reflection for TE- and TM-guided waves have opposite signs. This in turn results in a significant modification to waveguide dispersion characteristics and leads to an unusual phenomenon in the guided waves: under some conditions, the metal bound waveguides support higher-order guided modes, but may not allow guiding of the fund-amental and/or lower-order modes. This revised version was published online in November 2006 with corrections to the Cover Date.     

Excitons in the preionization electric field of a Schottky barrier

The low-temperature (T=80 K) exciton reflectance spectra of CdS crystals in the electric field of a Schottky barrier are investigated. An anomalous Stark shift of a hydrogenic exciton state is detected in the preionization limit. An analysis of the spectra within the theory of a nonlocal dielectric response in a spatially inhomogeneous medium reveals the character of the subbarrier electric field distribution. Fiz. Tverd. Tela (St. Petersburg) 40, 879–880 (May 1998)     

Propagation oscillations in the near-field response of traveling surface waves launched by metallic nanoapertures

We discuss the implications of a frequency-dependent complex dielectric function ε(ω) of a metal for the interpretation of scanning near-field optical microscopy (SNOM) measurements in the vicinity of metallic nanoapertures. For subwavelength slits in gold films we observe distinct spatial intensity oscillations in the near-field signal for specific wavelengths in the visible spectrum. These oscillations of the SNOM signal far away from the nanoslit are ascribed to a constructive interference between the propagating surface plasmon (SP) with light scattered parallel to the gold–air interface. In these spatial SNOM-signal oscillations information about the surface plasmon dielectric function is encoded which can be extracted, for example, in surface plasmon interferometry for applications as sensors or waveguides.     

AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD).Surface morphology of samples are observed by atomic force microscopy (AFM),indicating that the ALD NbAlO has an excellent-property surface.Moreover,the sharp transition from depletion to accumulation in capacitance-voltage (C-V)curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN.The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm,and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT.Based on the improved direct-current operation,the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators.     

Beam focusing from double subwavelength metallic slits filled with nonlinear material surrounded by dielectric surface gratings

Based on the radiation properties of surface plasmon polaritons (SPPs) can be controlled by adjusting the refractive indexes of dielectric materials in the metallic slits, a novel plasmonic focusing structure formed by two subwavelength metal apertures filled with Kerr nonlinear material surrounded by surface dielectric gratings is proposed and demonstrated numerically. Directions of radiation fields are determined by the phase difference of the surface waves at the exit interface and resonance property of each surface grating. Numerical simulations using two-dimensional (2D) Finite-Difference Time-Domain (FDTD) method verify that the deflection angle and focal length can be controlled easily by changing the intensity of incident light, dynamically tunable on-axis and off-axis focusing effects can be achieved.     

Resonant three-dimensional photonic crystals

The theory of the exciton-polariton band structure of a resonant three-dimensional photonic crystal is developed for an arbitrary dielectric contrast and an arbitrary effective mass of an exciton excited in a composite material. The calculation is performed for a periodic array of semiconductor balls embedded in a dielectric matrix. The position of the lower polariton dispersion branches is shown to depend monotonically on the exciton effective mass and to be governed by the interaction of light with the first several states of a mechanical exciton quantum-confined within each ball. The effect of excitonic states on the band gap of a photonic crystal in the [001] direction is considered analytically in terms of a two-wave approximation.     

Sub‐wavelength interference pattern from volume plasmon polaritons in a hyperbolic medium

Inside of a hyperbolic medium, the principal components of the permittivity tensor have opposite signs causing the medium to exhibit a ‘metallicbr’ type of response to light wave sin one direction, and a ‘dielectric’ response in the other. Our study shows that inside hyperbolic media, volume plasmon polaritons (VPPs) propagate along the characteristic planes, forming distinct, directionally dependent optical responses. This is similar to the propagation of conventional surface plasmon polaritons (SPPs) along the planar interfaces separating the isotropic dielectrics and metallic slabs. Interestingly, the plasmon polariton propagates along the resonance cone in a volume of hyperbolic metamaterial crossing the interfaces of the constitutive materials. The Young's double‐slit scheme is used to study the spatially‐confined diffraction in a hyperbolic slab, made of many thin planar layers of a metal and dielectric, to obtain the sub‐wavelength interference pattern at the output interface. Proof‐of‐concept systems for producing such patterns applicable to nanolithography and subwavelength probes are demonstrated.     

Surface-plasmon-assisted guiding of broadband slow and subwavelength light in air

A class of axially uniform waveguides is introduced, employing a new mechanism to guide light inside a low-index dielectric material without the use of photonic band gap, and simultaneously exhibiting subwavelength modal size and very slow group velocity over an unusually large frequency bandwidth. Their basis is the presence of plasmonic modes on the interfaces between dielectric regions and the flat unpatterned surface of a bulk metallic substrate. These novel waveguides allow for easy broadband coupling and exhibit absorption losses limited only by the intrinsic loss of the metal.     

Estimation of the Electron–Phonon Coupling Constants for Graphene and Metallic and Nonmetallic Substrates

Two modes of graphene–substrate interaction have been considered: a weak van der Waals bond and a strong covalent bond. The Lennard–Jones potential and Harrison bond-orbital method are used in the former and latter cases, respectively. Analytical expressions for the electron–phonon interaction constants, which contain only two parameters (binding energy E _B for graphene and a substrate and distance d between them) have been obtained. The constants have been calculated for metallic, semiconductor, and dielectric substrates.

     

The influence of wire shape on surface plasmon mode distribution

The influence of the nanowire shape on the excitation of surface plasmon polaritons at metallic nanowire arrays is studied numerically. For a system of silver nanowires housed on a polymer substrate, nanowires with rectangular and elliptical cross sections are compared. It was found that in the case of rectangular nanowires the excitation efficiency is higher for surface plasmons at the polymer–metal interface than for surface plasmons at the air–metal interface. Conversely, in the case of elliptical nanowires the air–metal plasmon modes are stronger. Further, it is noted that the nanowire shape directly influences the position of the surface plasmon resonance.     

The effect of spatial dispersion on the attenuation of exciton polaritons in semiconducting films

We calculate the effective light absorption coefficient K(ω) and the frequency-integrated absorption I = ∫ K(ω) dω caused by spatially dispersive excitons in a semiconductor film. A sharp decrease of I is found for small masses and long lifetimes of the exciton. Oscillations of I as a function of thickness are also reported.