Si–Ge alloys in C2/c phase with tunable direct band gaps: A comprehensive study

Si–Ge alloys are a new type of semiconductor material that are of great significance for the development of microelectronic technology, especially in the photoelectricity industry and for thermoelectric conversion in high temperature applications (>700 K). In the present work, a novel Ge allotrope in the C2/c phase with band gap of 1.102 eV was firstly proposed, which is suitable for the absorption of sunlight. C2/c-Ge are mechanically, dynamically and thermodynamically stable. A series of Si_24-xGe_x alloys (x = 0, 8, 16, 24) in the C2/c phase with band gaps of 1.10–1.50 eV are predicted by ab initio calculations at ambient conditions. The Si_24-xGe_x alloys (x = 0, 8, 16, 24) in C2/c phase have better absorption ability than that of the Si in diamond, hP12 and oC12 phases. The Si_24-xGe_x alloys in the C2/c phase have the strong absorption in the visible, which have a great impact on the new-generation photovoltaic applications.     

First-principles study of structural, mechanical, electronic and optical properties of 3R- and 2H-CuGaO2

We calculated the structural parameters, elastic, mechanical, electronic and optical properties of 3R- and 2H-CuGaO₂ using the first-principles density-functional theory. The results show that the structural parameters of two phases are in good agreement with previous theoretical and experimental data. Two phases are mechanically stable, behave in ductile manner and have indirect band gap. The analyses of electronic structures and charge densities of two phases show mainly covalent nature in Cu-O bonds and coexistence of both ionic and covalent nature in Ga-O bonds. The optical properties are obtained and discussed, including the complex dielectric function, refractive index, extinction coefficient, optical reflectivity, absorption coefficient, energy-loss spectrum and complex conductivity function, which provide useful information for the future applications of CuGaO₂.     

First-principles investigation of the structural,dynamical, electronic,and elastic properties of WGe2 and W5Ge3

ABSTRACT

We have investigated the structural, dynamical, elastic, and electronic properties of WGe₂ and W₅Ge₃ compounds in different phases. We have considered the C11_b (tetragonal, space group I4/mmm) and C23 (orthorhombic, space group Pnma) strukturbericht phases for WGe₂ compound and D8₁ (tetragonal, space group I4/mcm), D8_m (tetragonal space group I4/mcm) strukturbericht phases for W₅Ge₃ compound. The structural parameters, formation enthalpies, phonon dispersion curves, elastic constants, mechanical modulus, anisotropic factors, thermal conductivities, and electronic structures have been investigated using generalised gradient approximation within in the plane wave pseudopotential density functional theory. The calculated lattice constants are in a good agreement with the experimental data. The considered phases for WGe₂ and W₅Ge₃ compounds have a metallic character. The results indicated that all phases for compounds are both mechanically stable and dynamically stable except for W₅Ge₃-D8₁. The anisotropy in some mechanical modulus has been investigated using several elastic anisotropy indexes and directional dependence of compressibility, Young’s moduli, shear moduli, and Poisson’s ratio.     

Electronic Structure,Optical Properties,and Pressure Behavior of the CdB<Subscript>4</Subscript>O<Subscript>7</Subscript> and HgB<Subscript>4</Subscript>O<Subscript>7</Subscript> Compounds

Ab initio calculations of the structural, electronic, and optical properties of the CdB₄O₇ and HgB₄O₇ tetraborate compounds in three structural modifications with the Pbca, Cmcm, and Pmn2₁ symmetry have been performed in the framework of the density functional theory using the VASP package. The calculations of the electronic band structure showed that these compounds in all the investigated modifications are dielectrics with a band gap of 2–4 eV. The calculation of the structural properties of the tetraborates under pressure showed that the phase transition between the Pbca and Pmn2₁ structures in cadmium and mercury tetraborates occurs under pressures of 4.8 and 4.7 GPa, respectively.     

Cubic to tetragonal phase transition effects on the electronic structures of pure and iron doped barium titanate

Molecular orbital calculations relevant to TiO₆^8- and FeO₆^9- clusters are carried out in the O_h and C_4v symmetries in order to represent the electronic structures of pure and iron doped BaTiO₃ crystals in the cubic and tetragonal phases. The spontaneous polarization P_s is computed from the ground-state electronic distributions. The band gap anisotropy and the band edge polarization potentials are calculated and compared to experiment.     

Comparative first-principles calculations of electronic, optical and elastic anisotropy properties of CsXBr3 (X=Ca,Ge,Sn ) crystals

Detailed ab initio calculations of the structural, electronic, optical and elastic properties of CsCaBr₃, CsGeBr₃ and CsSnBr₃ crystals are presented in this paper. Based on the obtained results, CsCaBr₃ is characterized as a dielectric with an indirect band gap, whereas CsGeBr₃ and CsSnBr₃ are semiconductors with very narrow direct band gaps. The first theoretical estimations of the refractive indexes for all compounds are reported. Variations of the electron density difference distribution induced by changes of the second cation were analyzed and related to the type of chemical bonding between atoms. In addition, the complete set of elastic parameters (which includes the elastic constants, elastic compliance constants, bulk and Young’s moduli, elastic anisotropy) was obtained. Directional anisotropy of elastic properties was visualized; the directions in the crystal lattices, along which the maximal and minimal values of the Young’s moduli are realized, were identified.     

First-principles study of the properties of Pmn21-B1–xAlxN

Abstract

The structural, mechanical, elastic anisotropic, thermodynamic and optoelectronic properties of Pmn2₁-B_1–xAl_xN are investigated using density functional theory (DFT) calculations. For BN and AlN, the lattice parameters, elastic constants and elastic modulus are found to be in agreement with others’ theoretical data. The absence of any imaginary phonon frequencies in the entire Brillouin zone confirms that Pmn2₁-B_1–xAl_xN alloys are dynamically stable. The vibration modes transfer from high frequency to low frequency with the increase of the component Al. All of Pmn2₁-B_1–xAl_xN (x = 0, 0.25, 0.50, 0.75, 1) behave in a brittle manner. Ternary BAlN alloys are more anisotropic than BN and AlN. The Debye temperature decreases with the increase of the component Al. At temperatures below 2000 K, the heat capacity of Pmn2₁-B_1–xAl_xN increases with the increase of the component Al. For B_0.5Al_0.5N, below the Fermi level, B p contributes more than Al p, whereas above the Fermi level, Al p contributes more than B p. With the increase of composition Al, B–N interactions become weaker and Al–N interactions become stronger, and the dielectric function, absorption and Raman intensity drift from high-frequency to low-frequency.     

First-principles characterisation of the pressure-dependent elastic anisotropy of SnO2 polymorphs

Using DFT calculations, this study investigates the pressure-dependent variations of elastic anisotropy in the following SnO₂ phases: rutile-type (tetragonal; P4₂/mnm), CaCl₂-type (orthorhombic; Pnnm)-, α-PbO₂-type (orthorhombic; Pbcn)- and fluorite-type (cubic; Fm-3m). Experimentally, these polymorphs undergo sequential structural transitions from rutile-type → CaCl₂-type → α-PbO₂-type → fluorite-type with increasing pressure at 11.35, 14.69 and 58.22 GPa, respectively. We estimate the shear anisotropy (A₁ and A₃) on {1?0?0} and {0?0?1} crystallographic planes of the tetragonal phase and (A₁, A₂ and A₃) on {1?0?0}, {0?1?0} and {0?0?1} crystallographic planes of the orthorhombic phases. The rutile-type phase shows strongest shear anisotropy on the {0?0?1} planes (A₂ > 4.8), and the degree of anisotropy increases nonlinearly with pressure. In contrast, the anisotropy is almost absent on the {1?0?0} planes (ie A₁ ~ 1) irrespective of the pressure. The CaCl₂-type phase exhibits similar shear anisotropy behaviour preferentially on {0?0?1} (A₃ > 5), while A₁ and A₂ remain close to 1. The α-PbO₂-type phase shows strikingly different elastic anisotropy characterised by a reversal in anisotropy (A₃ > 1 to < 1) with increasing pressure at a threshold value of 38 GPa. We provide electronic density of states and atomic configuration to account for this pressure-dependent reversal in shear anisotropy. Our study also analyses the directional Young’s moduli for the tetragonal and orthorhombic phases as a function of pressure. Finally, we estimate the band gaps of these four SnO₂ phases as a function of pressure which are in agreement with the previous results.     

A “superlattice” model for a smooth GaAs/AlAs (001) heterointerface

The effect of a smooth interface potential on the electronic states in GaAs/AlAs (001) structures is investigated using the pseudopotential method. In this approach, the transition region between GaAs and AlAs is assumed to be a layer corresponding to a half-period of the (AlAs)₂(GaAs)₂ superlattice, with the potential of this layer being close to the real potential near the heterointerface. In this case, the intervalley mixing occurs at two boundaries and in the transition layer rather than at one boundary, as in the model with a sharply cut-off potential. It is shown that a smooth potential has an appreciable effect on electron tunneling in structures with thin layers. This effect is especially important in the case where short-wavelength X states are involved. For one GaAs/AlAs (001) boundary, the transition layer acts as a quantum well localizing the charge density of a mixed Γ-X state near the boundary. In structures with a layer thickness of less than 2 nm, the differences in the resonance energies obtained in the models with a smooth heterointerface and with a sharp heterointerface can be as high as ～0.1 eV. The envelopes of the wave functions associated with Γ ₁ ⁽¹⁾ , Γ ₁ ⁽²⁾ , and Γ ₃ ⁽¹⁾ superlattice valleys and with Γ₁, X ₁, and X ₃ valleys of GaAs and AlAs are analyzed. It is shown that the matching matrices for the envelope functions at the GaAs/(AlAs)₂(GaAs)₂ and (AlAs)₂(GaAs)₂/AlAs boundaries depend only weakly on the electron energy near the bottom of the conduction band and that the probability densities calculated using these functions agree with the results of many-band calculations. Therefore, these functions can be used to construct a model with a smooth interface potential in the framework of the effective-mass method.     

Pressure dependences of elastic and lattice dynamic properties of AlAs from ab initio calculations

Ab initio calculations, based on norm-conserving nonlocal pseudopotentials and density functional theory (DFT), are performed to investigate the structural, elastic, dielectric, and vibrational properties of aluminum arsenide AlAs with zinc-blende (B3) structure and nickel arsenide (B8₁) structure under hydrostatic pressure. Firstly, the path for the phase transition from B3 to B8₁ is confirmed by analyzing the energies of different structures, which is in good agreement with previous theoretical results. Secondly, we find that the elastic constants, bulk modulus, static dielectric constants, and the optical phonon frequencies are varying in a nearly linear manner under hydrostatic pressure. What is more, the softening mode of transversal acoustic mode at X point supports the phase transition in AlAs.     

Theoretical study of hyperfine interactions at the Ta site in Hafnia polymorphs

The electric field gradient resulting from Ta substitutional defect in normal monoclinic phase is studied using all-electron ab initio NFP-LMTO method. Hyperfine parameters in Pbca and Pnma phases have also been calculated to determine the usefulness of quadrupolar interactions in the investigation of phase diagrams under hydrostatic pressure. Predictions for hyperfine parameters in high temperature P42nmc and Fm3m phases were also developed. Given the donor behavior of Ta in HfO₂, two charge states, 0 and +1, have been studied for each phase. Although HFI do not vary significantly with charge, it was determined that for a Ta+1 in P21/c phase hyperfine parameters is consistent with experimental results. Quadrupolar interactions for transitions to denser phases show important variations with respect to that of the normal phase: asymmetry parameter for Pbca and the electric field gradient for Pnma both increase substantially. At high temperature phases, drastic decrease in both EFG and asymmetry parameter in P42nmc is observed, while they almost vanish in Fm3m.     

Pressure effect on structural,electronic and thermodynamic investigations of europium filled skutterudite EuFe4Sb12: LDA and LSDA approximations

Numerical calculations based on the full potential muffin-tin orbitals method (FP-LMTO) within the local density approximation (LDA) and the local spin-density approximation (LSDA) to investigate the structural, electronic and thermodynamic properties of filled skutterudite EuFe₄Sb₁₂ are presented. The electronic band structure and density of states profiles prove that this material is a conductor. The present investigation is also extended to the elastic constants, such as the bulk modulus B, anisotropy factor A, shear modulus G, young's modulus E, Poisson's ratio ν, and the B/G ratio with pressure in the range of 0–40 GPa. The sound velocities and Debye temperatures are also predicted from the above constants. The variations of the primitive cell volume, expansion coefficient α, bulk modulus B, heat capacity (C_p and C_v), Debye temperature θ_D, Helmholtz free energy A, Gibbs free energy G, entropy S, and internal energy U with pressure and temperature in the range 0–3000 K are calculated successfully.     

Band discontinuity in GaAs/AlAs superlattices with InAs strained insertion-layers

We have theoretically investigated the valence-band discontinuity (ΔE_v) at the (100) GaAs/AlAs interface with the InAs strained insertion-layer. The theoretical calculation is carried out by the self-consistent tight-binding method with the sp³s* basis in the (GaAs)₅/(InAs)₁/(AlAs)₅/(InAs)₁ [100] superlattice. ΔEv at the GaAs/InAs(1ML)/AlAs interface is calculated to be 0.50 eV, which is practically equal to ΔEv = 0.51 eV at the GaAs/AlAs interface with no InAs layers. The insertion of the InAs monolayer changes the detail of valence charge density at the GaAs/AlAs interface but does not change ΔE_v. The result of calculation is in consistent with our experimental measurement by using the x-ray photoelectron spectroscopy.     

Effects of competition between the anisotropy and the spin quantum number on the magnon energy gap in a four-layer ferromagnetic superlattice

The magnon energy bands are studied for a four-layer ferromagnetic superlattice, with regard to the effects of the competition between the anisotropy and the spin quantum number. A special attention is also paid on the effects of the symmetry of the system. It is found that three modulated energy gaps exist in the magnon energy band along K_x direction perpendicular to the superlattice plane. The magnetic anisotropy affects significantly the magnon energy gaps. The zero energy gap Δω₂₃ correlates with the conditions between anisotropy constants, D₁+D₃=D₂+D₄ and D₁=D₃ (or D₂=D₄), while the disappearance of the magnon energy gaps Δω₁₂ and Δω₃₄ corresponds to a translational symmetry of x-direction in a unit cell. When the parameters of the system deviate from these conditions, the energy gaps Δω₁₂, Δω₂₃ and Δω₃₄ become larger. There is a competition effect of the anisotropy and the spin quantum number on the magnon energy gaps Δω₁₂ and Δω₂₃. When the symmetry of the system is higher, the competition can achieve a balance to cause the zero energy gap.     

Structures, chemical bonding, magnetisms of small Al-doped zirconium clusters

The geometrical and electronic properties of small Al-doped Zrn−1 and host Zrn clusters (n=2-8) are investigated with hybrid HF/DFT functional: B3LYP. For the most favorable configurations of Zrn−1Al clusters, the Al atom prefers to be located on the surface of host zirconium clusters. The isomers that correspond to low coordination number of Zr-Al bonds are found to be more stable. The doping of Al atom in Zrn−1 clusters improves the chemical activities of host clusters. The Zr₅, Zr₇, Zr₄Al and Zr₆Al clusters behave the stronger stabilities relative to their respective neighbors. The strong s-d hybridizations are presented in all bonding Zr atoms. The values of WBI together with AIM analysis suggest that the Zr-Zr interactions are stronger than those between Zr and Al atoms. The doping of Al atom results into the decrease of spin magnetic moments for host zirconium clusters. The moments are mainly derived from the 4d electrons of bonding Zr atoms.     

Stability, structural, elastic, and electronic properties of polymorphs of the superconducting disilicide YIr2Si2

Using the ab initio approaches, the comparative stability, structural, elastic, and electronic properties of three polymorphs of the superconducting disilicide YIr₂Si₂, which differ in the atomic configurations of [Ir₂Si₂] (or [Si₂Ir₂]) blocks, were examined. For these YIr₂Si₂ polymorphs, the optimized structural data, elastic parameters, electronic bands, total and partial densities of states, Fermi surface topology, and chemical bonding were obtained and analyzed. Our studies showed that although ThCr₂Si₂- and CaBe₂Ge₂-type polymorphs are mechanically stable and relatively hard materials with low compressibility, they will behave as ductile systems. Among them, ThCr₂Si₂-type polymorph will show enhanced elastic anisotropy. In the vicinity of the Fermi energy, the topology of the electronic bands and the Fermi surface for various polymorphs are quite different. Besides, the CaBe₂Ge₂-type polymorph is expected to be anisotropic, i.e. happening mainly in the [Si₂Ir₂] blocks. The inter-atomic bonding for YIr₂Si₂ polymorph phases can be described as an anisotropic mixture of covalent, metallic, and ionic contributions, where inside the [Ir₂Si₂] (or [Si₂Ir₂]) blocks, Ir-Si and Ir-Ir bonds take place, whereas between the adjacent [Ir₂Si₂] (or [Si₂Ir₂]) blocks and Y atomic sheets, Si-Si and Ir-Y, Si-Ir and Si-Y, or mainly Ir-Ir bonds emerge for various polymorphs.     

Structural and electronic properties of wurtzite,zincblende and rocksalt Al1 − xInxN ternary alloys at ambient and high pressure

ABSTRACT

Although AlInN is originally a wurtzite structure, zincblende and rocksalt are other potential phases. It will be interesting to have a comparative study of the physical properties of this compound in various phases. A DFT-based study of wurtzite, zincblende and rocksalt phases of AlInN alloys is carried out. Structural (lattice parameter, bulk modulus) and electronic properties (energy band gap, and electron effective mass) of the Al_{1??? x}In_xN alloys are investigated, at ambient pressure, throughout the whole range of indium contents for all considered phases. High pressure effects on the studied parameters are also examined, with the phase transition pressures computed for different values of In concentrations, and compared with available data. Structural density functional calculations are performed with Perdew–Burke–Ernzerhof gradient-corrected functional for solids (PBEsol), while electronic structure is computed with the modified Becke–Johnson (TB-mBJ) potential exchange to ensure a better accuracy of calculated the band gaps. Alloy randomness is taken into account using a special quasi-random structure.     

Design of novel magnetic materials based on ZrCuSiAs-like semiconducting pnictide-oxides from first-principles calculations

We assumed that significant enlargement of the functional properties of the family of quaternary ZrCuSiAs-like pnictide-oxides, often called also 1111 phases, which are known now first of all as parent phases for new FeAs superconductors, may be achieved by replacement of non-magnetic ions by magnetic ions in semiconducting ZrCuSiAs-like phases. We checked this assumption by means of first-principles FLAPW–GGA calculations using a wide-band-gap semiconductor YZnAsO doped with Mn, Fe, and Co as an example. Our main finding is that substitution of Mn, Fe, and Co for Zn leads to drastic transformations of electronic and magnetic properties of the parent material: as distinct from the non-magnetic YZnAsO, the examined doped phases Y Zn_0.89Mn_0.11AsO, Y Zn_0.89Fe_0.11AsO, and Y Zn_0.89Co_0.11AsO behave as a magnetic semiconductor, a magnetic half-metal or as a magnetic gapless semi-metal, respectively.     

Structural, electronic, elastic and optical properties of fluoro-perovskite KZnF3

We determine the structural, electronic, elastic and optical properties of fluoro-perovskite KZnF₃ using the full potential linear augmented plane wave approach (FP-LAPW) based on the density functional theory (DFT). The exchange-correlation potential is treated by the local density approximation (LDA) and the generalized gradient approximation (GGA). The calculated structural parameters are in good agreement with the available data. We have obtained an indirect band gap. The effect of the pressure on the band gaps is investigated. We evaluate the elastic constants (C_ij), elastic moduli and the Debye temperature. The imaginary and the real parts of the dielectric function ε(ω) and some optical constants are also calculated.     

Electronic and optical properties of LiMgN, LiMgP and LiMgAs under hydrostatic pressure

First principles calculations, by means of the full-potential linearized augmented plane wave method within the local density approximation, were carried out for the effect of pressure on the electronic and optical properties of the filled tetrahedral compounds LiMgN, LiMgP and LiMgAs. The bandgap pressure coefficient trend in the ternaries is found to be similar to the one encountered in the zinc-blende-like AlX. The first order bandgap pressure coefficient a^Γ-Γ in LiMgN is larger than the corresponding one in AlN, while it is smaller in LiMgP and LiMgAs compared to the one in AlP and AlAs. The predicted values of the dielectric constants for LiMgN, LiMgP and LiMgAs are close to those of the binary compounds AlN, AlP and AlAs.