Low-temperature dry etching of tungsten,dielectric, and trilevel resist layers on GaAs

Dry etching of common masking materials used in GaAs device technology, was examined down to temperatures of –30°C. The etch rates of SiN_x, SiO₂, and W in SF₆/Ar are reduced below 0°C, but the anisotropy of the etching is improved at low temperature. Microwave enhancement of the SF₆/Ar discharges produces increases in etch rates of several times at 25°C, but much lower increases at –30°C substrate temperature. The underlying GaAs surface shows increased S and F coverage after low-temperature etching, but these species are readily removerd either by anex-situ wet chemical cleaning step or an in-situ H₂ plasma exposure. Photoresist etching is less sensitive to temperature, and anisotropic profiles are produced between –30 and +60°C in pure O₂ discharges.     

Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part II: InP and related compounds

Electron Cyclotron Resonance (ECR) discharges of CCl₂F₂ or PCl₃ have been used to etch InP, InAs, InSb, InGaAs and AlInAs. The etch rates of these materials increase linearly with additional RF power level applied to the cathode and are in the range 50–180 Å · min^–1 for 50 W (DC bias 308 V), 10 mTorr, 38 CCl₂F₂/2 O₂ plasmas. The etch rates fall rapidly with increasing pressure or increasing O₂-to-CCl₂F₂ ratio. Polymeric surface residues up to 40 Å thick are found on all of these semiconductors when using Freon-based gas mixtures. Etching at practical rates is possible with only 100 V self-bias when using PCl₃ discharges, and the addition of microwave excitation under these conditions enhances the etch rates by factors of 2–9. At higher self-biases (300 V) etch rates of 3500–8000 Å · min^–1 are possible with PCl₃ although the surface morphologies are significantly rougher and the etching less anisotropic than with CCl₂F₂-based mixtures.     

Temperature-dependent dry etching characteristics of III–V semiconductors in HBr- and HI-based discharges

Microwave discharges of HBr/H₂/Ar and H/H₂/Ar with additional do biasing of the sample were used to etch InP, GaAs, and AlGaAs at temperatures between 50–250°C. The etch rates increase by factors of 3–50 and 5–9, respectively, for HBr-and HI-based discharges over this temperature range, but display non-Arrhenius behavior. The etched surfaces became very rough above 100°C for InP with either discharge chemistry due to preferential loss of P, while GaAs and AlGaAs are more tolerant of the elevated temperature etching. The near-surface electrical properties of InP are severely degraded by etch temperatures above 100°C, while extensive hydrogen in-diffusion occurs in GaAs and AlGaAs under these conditions, leading to dopant passivation which can be reversed by annealing at 400°C.     

Characteristics of vinyl iodide microwave plasma etching of GaAs/AlGaAs and InP/InGaAs heterostructures

Vinyl iodide (C₂H₃I) microwave discharges with additions of H₂ and Ar are found to provide faster etch rates than conventional CH₄/H₂/Ar discharges for InP, InGaAs, GaAs, and AlGaAs. This is a result of the relatively high volatilities of indium, gallium, and aluminum iodide species. The etched features are smooth and anisotropic over a wide range of do self-biases (–150 to –350 V), process pressures (1–20mTorr), and microwave powers (150–500 W). The polymer that forms on the mask during the plasma exposure can be readily removed in O₂ discharges. Electron spectroscopy for chemical analysis (ESCA) showed that the etched surfaces are slightly deficient in the group V elements under most conditions, but changes to the optical properties of the semiconductors are minimal. No defects are visible by transmission electron microscopy (TEM) in GaAs or InP samples etched at dc biases –250 V.     

Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part I: GaAs and related compounds

A systematic study has been performed of the dry etching characteristics of GaAs, Al_0.3Ga_0.7As, and GaSb in chlorine-based electron cyclotron resonance (ECR) discharges. The gas mixtures investigated were CCl₂F₂/O₂, CHCl₂F/O₂, and PCl₃. The etching rates of all three materials increase rapidly with applied RF power, while the addition of the microwave power at moderate levels (150 W) increases the etch rates by 20–80%. In the microwave discharges, the etch rates decrease with increasing pressure, but at 1 m Torr it is possible to obtain usable rates for self-bias voltages 100 V. Of the Freon-based mixtures, CHCl₂F provides the least degradation of optical (photoluminescence) and electrical (diode ideality factors and Schottky barrier heights) properties of GaAs as a result of dry etching. Smooth surface morphologies are obtained on all three materials provided the microwave power is limited to 200 W. Above this power, there is surface roughening evident with all of the gas mixtures investigated.     

Measurement of electron densities by a microwave cavity method in 13.56-MHz RF plasmas of Ar,CF4, C2F6, and CHF3

Electron densit ies have been determined /or RF plasmas that were generated within a microwave resonant cavity by measuring the difference of the resonance frequencies with and without plasma. Since that method only yields a value of the electron density weighted ouer the microwave electric field distribution, to obtain real values an assumption on the spatial distribution of the electron density had to he made. Spatial profiles were taken of the emission of a 4s–5p Ar line at 419.8 not (with a small Ar admixture). The electron densities have been determined as a function of pressure and RF power in Ar, CF₄, C₂ F₆ and CHF, plasmas. The results indicate that the electron density for the last three gases decreases as a function of pressure above 50 m Torr. Typical values for the electron density for the investigated parameter range are 1–6 · 10³ cm^–3. Furthermore, the electron density is the lowest in gases with a high attachment cross .section.     

Studies of GaAs surface roughness and organic masks resistance depending on the ion-beam energy

Summary The development of A^III–B^V semiconductor surfaces exposed to ion-beam irradiation in the ion energy range from 100 to 1000 eV and the ion current density of 1 mA/cm² (max) is investigated. The ion-beam etching with an ion energy of 1 keV results in sharp cones and needles on the semiconductor surface due to the surface contamination and unevenness. Etching with ion-beam energies in the order of 300 eV and with etch rates higher than 1000 /min produces relatively even GaAs surfaces. In case of reactive gases (i.e. CCl₂F₂ and the mixture of CCl₂F₂+Ar) ion-beam etching results in significantly higher etch rates; however, the mask residue contains Cl and F. In studies on the ion-beam resistance of organic masks selectivities as high as 13:1 for the photoresist CM-79 with an ion energy of 180 eV and an ion current density of approximately 0.3 mA/cm² were achieved.     

Dry etching characteristics of III–V semiconductors in microwave BCl3 discharges

Electron cyclotron resonance (ECR) BCl₃ discharges with additional rf biasing of the sample position have been used to etch a variety of III–V semiconductors. GaAs and Al_xGa_1–xAs (x = 0–1) etch at equal rates in BCl₃ or BCl₃/Ar discharges, whereas SF₆ addition produces high selectivities for etching GaAs over AlGaAs. These selectivities are in excess of 600 for dc biases of –150 V, and fall to 6 for biases of –300 V. If the dc biases are kept to – 100 V, there is no measurable degradation of the optical properties of the GaAs and AlGaAs. The AlF₃ formed on the AlGaAs surface during exposure to BCl₃/SF₆ plasmas can be removed by sequential rinsing in dilute NH₄OH and water. In-based materials (InP, InAs, InSb, InGaAs) etch at slow rates with relatively rough morphologies in BCl₃ plasmas.     

On the effect of low-energy ion bombardment on polystyrene and polymethylmethacrylate etch rates in rf plasmas

The effect of low-energy ion bombardment on CD₄/O₂ and CF₃X (X=F, Cl, Br) plasma etching has been assessed by applying controlled rf bias voltages on polystyrene (PS) and polymethylmethacrylate (PMMA) samples. In both cases ion bombardment has been found to have a chemical effect. In the case of CF₄/O₂ discharges, ion bombardment has been found to change the relative etching efficiency of different mixtures. In the case of CF₃X plasmas, ion bombardment has been found to alter PMMA and PS etch rates in a different way. In particular, the ratios between CF₄ and CF₃X (X=Cl, Br) etch rates of PS have been found to decrease with increasing bias voltage. This effect has been tentatively attributed to an ion bombardment-induced enhancement of the reaction between the aromatic ring and halogen molecules formed in CF₃Cl and CF₃Br discharges.     

Reaction of Tetraphenylantimony Bromide with o-Tolylbismuth Bis(2,5-dimethylbenzenesulfonate). The Formation of Tetranuclear Anion [Bi4Br16]4–

The [Ph₄Sb]₄[Bi₄Br₁₆] complex was synthesized via reaction of tetraphenylantimony bromide with o-tolylbismuth bis(2,5-dimethylbenzenesulfonate) and studied using X-ray diffraction analysis. This compound has ionic structure and consists of tetraphenylstibonium cations and a four-charge tetranuclear anion [Bi₄Br₁₆]^4– formed by two pairs of edge-sharing iBr₆ octahedra. The Sb–C bond lengths are equal to 2.05(1)–2.10(1) Å, the Bi–Br distances lie within the 2.649(2)–3.246(2) Å range, and the Sb(1)···Br(7) distance is equal to 3.934(2) Å.     

Etching Characteristics and Mechanisms of TiO<Subscript>2</Subscript> Thin Films in CF<Subscript>4</Subscript> + Ar,Cl<Subscript>2</Subscript> + Ar and HBr + Ar Inductively Coupled Plasmas

The comparative study of etching characteristics and mechanisms for TiO₂ thin films in CF₄ + Ar, Cl₂ + Ar and HBr + Ar inductively coupled plasmas was carried out. The etching rates for TiO₂, Si and photoresist were measured as functions of gas mixing ratios at fixed gas pressure (10 mTorr), input power (800 W) and bias power (300 W). It was found that the maximum TiO₂ etching rate of ~130 nm/min correspond to pure CF₄ plasma while an increase in Ar fraction in a feed gas results in the monotonic non-linear decrease in the TiO₂ etching rates in all three gas mixtures. Plasma diagnostics by Langmuir probes and 0-dimensional (global) plasma modeling supplied the data on the densities of plasma actives specie as well as on particle and energy fluxes to the etched surface. It was concluded that, under the given set of experimental conditions, the TiO₂ etching kinetics in all gas systems correspond to the ion-assisted chemical reaction with a domination of the chemical etching pathway. It was found also that the differences in the absolute TiO₂ etching rates correlate with the energy thresholds for TiO₂ + F, Cl or Br reaction, and the reaction probabilities for F, Cl and Br atoms exhibit the different changes with the ion energy flux according to the volatility of corresponding etching products.     

Electronic structure,geometry, and stability of organic cations,dications, and donor-acceptor complexes

Geometric, electronic, and energy characteristics of the complexes formed in the CF₄ ·nAIF₃ (n = I or 2) and CBr₄ ·nAIBr₃ (n = 1, 2, or 4) systems have been determined by the semiempirical AM I method. Besides the donor-acceptor complexes, the CBr₃ ⁺...AIBr₄ ^–, CBr₃ ⁺...Al₂Br₇ ^–, CBr2²⁺...(AlBr₄ ^–)₂, and CBr₂ ²⁺...(Al₂Br₇ ^–)₂ ionic complexes can be formed in the CBr₄ ·nAlBr₃ systems. In the cations and dications of polyhalomethanes (when Hal = Cl, Br, or l) in both the free and bound (included in ionic complexes) states, carbon atoms carry negative charges, the C-Hal bonds are substantially shortened, and the positive charges are located on one-coordinate halogen atoms. These cations and dications can be considered as halenium ions that differ from halenium salts with dicoordinate halogen atoms. In the cationic and dicationic complexes of the CBr₄ ·nAlBr₃ systems, the maximum positive charges on the Br atoms are 0.39 and 0.94, respectively. Fluorine-containing cations and dications have structures similar to those of carbenium ions, whereas in the CF₄ ·nAIF₃ systems (n = l or 2), only donor-acceptor complexes are formed.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya. No. 3, pp. 554–560, March, 1996.     

EPR investigation of plasma-chemical resist etching in O2 and O2/CF4 discharges

During the etching of AZ 1350 photoresist in O₂ and O₂/CF₄ discharges, ground-state concentrations of atoms (O, F, and H), and small radicals (OH, HO₂, RO₂) were measured in the discharge afterglow by EPR spectroscopy. In the case of CF₄/O₂ discharges, the dependence of O and F atom concentrations on the etch time reflects both surfäce oxidation and fluorination reactions in accordance with existing etch models. In the case of high-rate resist etching in pure O₂ discharges, high concentrations of product radicals (H, OH and HO₂) were detected and compared with resist free O₂/H₂O discharges. Kinetic modeling of the afterglow reactions reveals that the mean lifetime and, accordingly, the diffusion length of the etchant species O(³P) is drastically reduced in rapid reactions with OH and HO₂. The results are used to simulate both etch homogeneity and the loading effect in a simple etch model.     

Radiation chemistry of CF2 Cl2 in the gas and liquid phases: Effect of doses rate

The dose rate dependence of CF₂ Cl₂ decomposition was studied in both, gas and liquid phase, for the range of 2.95·10^{1 7}–1.9·10^{1 9} eV·g^–1·h^–1. The major products were found to be CF₃Cl, CFCl₃, CF₂Cl–CF₂Cl and CF₂Cl–CFCl₂. The decomposition of CF₂Cl₂ was found to decrease with decreasing dose rate for the liquid phase, while an opposite trend was found for gas phase radiolysis. A new mechanism which explains these contrasting findings was suggested. The contribution of radical and of ionic (or molecular) processes to the yields of the various products was estimated.     

(N,N, N′, N′-tetramethylethylenediammonium)Cu2X6 (X=Cl,Br): crystal structure and magnetic interactions

Summary The crystal structures of (Me₄enH₂)Cu₂Cl₆ and (Me₄enH₂)Cu₂Br₆ have been determined. The triclinic crystals contain chains of symmetrically bibridged [Cu₂X₆]^2– dimers. Within the dimers the Cu–X distances average 2.299 Å (Cl) and 2.408 Å (Br) and the Cu–X–Cu angles are 96.4(1)^o (Cl) and 95.7(1)^o (Br). Longer Cu–X bonds, 2.679(1)Å (Cl) and 2.761(3)Å (Br), link dimers together into infinite chains via asymmetrical bridges. The bridging angles for the asymmetric bridge are 92.2(1)^o (Cl) and 89.4(1)^o (Br). Magnetic susceptibility data for both compounds are indicative of antiferromagnetic coupling. Analyses of the data yields J/k=–23(1)K (Cl) and –82(2)K (Br) for the interdimer coupling and J/k=–5(1)K (Cl) and –4(1)K (Br). The intradimer coupling for the chloride is in accord with magneto-structure relations deduced for similar salts. Similarly, the increased antiferromagnetic contribution upon substitution of Cl by Br follows trends previously observed.     

PE-CVD of Fluorocarbon/SiO Composite Thin Films Using C4F8 and HMDSO

Plasma copolymerization of hexamethyldisiloxane (HMDSO,(CH₃)₃-Si-O-Si-(CH₃)₃) and C₄F₈ was performed using an RF plasma enhanced chemical vapor deposition method for application to low dielectric constant intermetal dielectrics. Structure of the films was investigated by X-ray photoelectron spectroscopy and Fourier transform infrared (FT-IR) spectroscopy. The film composition was controlled gradually from fluorinated carbon to organic siloxane by changing the mixing ratio of HMDSO/Ar. Dielectric constant of the films ranged from 2–3.3. Thermal stability of the films, which was characterized by intensity loss of IR absorbance peak around 1000–1500 cm^–1 corresponding to C-F _n , Si-O-Si and Si-(CH₂)_n-Si bonds, was inferior to that from C₂F₄/HMDSO/Ar. In situ gasphase FT-IR spectroscopy revealed that there was a marked difference between the gas phase of C₄F₈/HMDSO/Ar and that of C₂F₄/HMDSO/Ar discharges. The IR spectrum of the former combination plasma contained a peak at 1250 cm^–1 with full width at half maximum as large as 150 cm^–1, which suggests that fluorocarbon particles and/or dusts are formed in the plasma. This suggests also that deposition precursors are not only CF _n (n = 1, 2, and 3) but also larger precursors such as C _x F _y (x > 1, y < 2x + 2) in C₄F₈/HMDSO/Ar discharges, which is presumably the cause of difference in thermal stability of the films prepared from C₄F₈/HMDSO/Ar and C₂F₄/HMDSO/Ar mixtures.     

A Comparative Study of HBr-Ar and HBr-Cl<Subscript>2</Subscript> Plasma Chemistries for Dry Etch Applications

The effects of HBr/Ar and HBr/Cl₂ mixing ratios in the ranges of 0–100% Ar or Cl₂ on plasma parameters, densities of active species influencing the dry etch mechanisms were analyzed at fixed total gas flow rate of 40 sccm, total gas pressure of 6 mTorr, input power of 700 W and bias power of 300 W. The investigation combined plasma diagnostics by Langmuir probes and the 0-dimensional plasma modeling. It was found that the dilution of HBr by Ar results in maximum effect on the ion energy flux with expected impact on the etch rate in the ion-flux-limited etch regime, while the addition of Cl₂ influences mainly the relative fluxes of Br and Cl atoms on the etched surface with expected impact on the etch rate in the reaction-rate-limited etch regime.     

Copper(II) Cyanoacetate Polymer: Synthesis and Structure

A new copper carboxylate polymer with cyanoacetate anion as a ligand was synthesized and studied using X-ray diffraction, IR, and EPR spectroscopy. The crystal is tetragonal: a= 14.702(2) Å, c= 13.470(3) Å, Z= 8, space group I4₁/a, and R= 0.0634. The copper atoms in the centrosymmetric dimeric fragment have a square-pyramidal surrounding with the CuO₄N coordination core and are joined through four bidentate bridging anions of cyanoacetic acid Cu(1)"–O(1A) 1.931(4) Å, Cu(1)"–O(1B) 1.926(4) Å, Cu(1)–O(2B) 2.018(3) Å, Cu(1)–O(2A) 2.036(4) Å, and Cu(1)–N(1A)" 2.206(5) Å). The Cu···Cu" distance in the dimer is 2.709 Å. The copper atom is extended from the mean equatorial plane toward the axial nitrogen atom by 0.23 Å. EPR data confirm strong antiferromagnetic interaction (2J –275 cm^–1) between the copper(II) ions of the dimeric fragment, whereas the interaction between the dimers is significantly weaker (J< 0.3 cm^–1).     

Equilibrium Structure of Beryllium Dibromide from Combined Gas Electron Diffraction and Vibrational Spectroscopy Analysis

The molecular structure of BeBr₂ has been investigated by gas-phase electron diffraction at the temperature 800(10) K. The conventional analysis yielded the following values: r _g(Be–Br) = 1.944(6)Å, l(Be–Br) = 0.068(4)Å, r _g(Br–Br) = 3.848(8)Å, l(Br–Br) = 0.109(3)Å, k(Be–Br) = 1.1(1.1) × 10^–5 ų, (Br–Br) = 2.1(1.0) × 10^–5 ų. Three models of nuclear dynamics were used to simulate the conventional analysis values—infinitesimal vibrations and two models, which take into account the kinematic and dynamic anharmonicity of the bending vibration. All models give similar values of bond angle, amplitudes, and shrinkage, excluding the harmonic model, which yields too low value l(Br–Br). The equilibrium bond distance r _e(Be–Br) = 1.932(11) Å was estimated, taking into account the anharmonicity corrections for stretching and bending vibrations and centrifugal distortion.     

Synthesis and Structure of Catena-[Bis(2-Methylimidazole)(μ-Phthalato)cobaltate(II)]

A new coordination compound [Co(Pht)(2-MeIm)₂] (I), where Pht^2–is the deprotonated radical of o-phthalic acid (H₂Pht) and 2-MeIm is 2-methylimidazole, was synthesized. Its structure was established using X-ray diffraction analysis. The crystal is orthorhombic: space group Pca2₁, a= 15.350(3), b= 7.957(2), c= 13.997(3) Å, (calcd.) = 1.505 g/cm³, and Z= 4. The tetrahedral coordination of the Co(II) atom includes two N atoms of two 2-methylimidazole molecules and two oxygen atoms of two carboxyl groups from different acid radicals. The Co–N distances are equal to 2.022(2) and 2.031(2) Å, while the Co–O distances are 1.972(2) and 2.000(2) Å. The carboxyl groups of the Pht^2–radical and the aromatic nucleus form angles of 47.2° and 35.9°, whereas the angle formed by the carboxyl groups themselves is 50.3°. Compound Iis a polymer, which is confirmed by the 1,6-bridging function of the o-phthalic acid radical. The Co···Co distance in a chain is equal to 7.367 Å. Separate chains are united in the crystal into a framework via N–H···O hydrogen bonds.