Long-wavelength local density of states oscillations near graphene step edges

Using scanning tunneling microscopy and spectroscopy, we have studied the local density of states (LDOS) of graphene over step edges in boron nitride. Long-wavelength oscillations in the LDOS are observed with maxima parallel to the step edge. Their wavelength and amplitude are controlled by the energy of the quasiparticles allowing a direct probe of the graphene dispersion relation. We also observe a faster decay of the LDOS oscillations away from the step edge than in conventional metals. This is due to the chiral nature of the Dirac fermions in graphene.     

STM/STS investigation of edge structure in epitaxial graphene

In this paper, we have used low temperature scanning tunneling microscopy and spectroscopy (LT-STM/STS) to study zigzag or armchair edges of epitaxial graphene on 6H-SiC (0001). The monolayer carbon structures exhibit occasionally one-dimensional ridge (1D) in close vicinity to step edge. This ridge exhibits different edges orientations in armchair–zigzag transition which give rise to different local density of states (LDOS) along this 1D structure. This ridge formation is likely explained by residual compressive in-plane stresses.     

Two-step method preparation of graphene without hydrogen on methanol pretreatment copper substrate by PECVD at low temperature

Plasma enhanced chemical vapor deposition (PECVD) is one effective method to prepare graphene at low temperature in a short time. However, the low temperature in PECVD could not provide substrate a proper state for large area and few layer graphene preparation. Herein, we propose a two-step method to grow graphene on Cu foils. In the first step, in order to acquire a smooth and oxide-free surface state, methanol was used as a reductant to pretreat Cu. In the second step, graphene films were prepared on Cu foils by PECVD using CH₄ as carbon source with H₂-free. Few-layer graphene sheets with diameter about 1 μm under low temperature (700 °C) and at a short time (10 min) on well pretreated Cu foils were successfully gotten. The effect of methanol pretreatment on graphene synthesis and the graphene growth mechanism on Cu substrate by PECVD are analyzed comprehensively.     

Band structure of Au layers on the Ru(0001) and graphene/Ru(0001) surfaces

The electronic structures of Au monolayers on the Ru(0001) and graphene-coated Ru(0001) surfaces have been calculated by DFT method using the supercell (repeated-slab) approach. The local densities of states (LDOS) and band structures of the monolayer and bilayer Au films adsorbed on the graphene/Ru(0001) and those of free hexagonal Au layers are found to be very similar. This result indicates that the monolayer graphene almost completely screens the Au layers from the Ru(0001) substrate surface, so that electronic properties of Au films adsorbed on graphene are determined predominantly by the electronic structure of the Au adlayers, essentially independent on the electronic structure of the substrate surface.     

阴离子化合物Y5Si3衬底增强石墨烯氧还原反应的第一性原理研究

本文采用阴离子化合物Y₅Si₃作为衬底,可以和石墨烯组成有效的氧还原催化剂. 反应热计算结果表明,阴离子材料可以促进氧还原反应中的决速步-氧气质子化的过程,从而增强石墨烯的氧还原能力. 电子结构计算表明体系较低的功函数(3.5 eV),良好的导电性以及从衬底到石墨烯的电荷转移都可以促进石墨烯的氧还原催化能力.     

Proximity effects in ferromagnet/superconductor bilayers

The local density of states (LDOS) in a ferromagnet (FM)/superconductor (SC) bilayer is obtained by using the Nambu Green's function approach. Besides the transition from the “0” state to “π” state found in the spatial variation of the LDOS in the FM, the dependence of the LDOS spectrum on the thicknesses of the FM and SC is also investigated. It is shown that the LDOS in a thin FM film in contact to the SC shows a strong superconducting feature suggesting the possible coexistence of the ferromagnetism and s-wave superconductivity induced by the proximity effects.     

Scanning tunneling microscopy and spectroscopy of graphene layers on graphite

We report low temperature scanning tunneling microscopy and spectroscopy on graphene flakes supported on a graphite substrate. The experiments demonstrate that graphite is exceptionally well suited as a substrate for graphene because it offers support without disturbing the intrinsic properties of the charge carriers. The degree of coupling of a graphene flake to the substrate was recognized and characterized from the appearance of an anomalous Landau level sequence in the presence of a perpendicular magnetic field. By following the evolution of the Landau level spectra along the surface, we identified graphene flakes that are decoupled or very weakly coupled to the substrate. From the Landau level sequence in this flake, we extract the local Fermi velocity and energy of the Dirac point and find extremely weak spatial variation of these quantities confirming the high quality and non invasive nature of the graphite substrate.     

Pairing symmetry of superconducting graphene

The possibility of intrinsic superconductivity in alkali-coated graphene monolayers has been recently suggested theoretically. Here, we derive the possible pairing symmetries of a carbon honeycomb lattice and discuss their phase diagram. We also evaluate the superconducting local density of states (LDOS) around an isolated impurity. This is directly related to scanning tunneling microscopy experiments, and may evidence the occurrence of unconventional superconductivity in graphene.     

Tip-Enhanced Raman Spectroscopy and Mapping of Graphene Sheets

Abstract: Single graphene sheets, a few graphene layers, and bulk graphite, obtained via both micromechanical cleavage of highly oriented pyrolytic graphite and carbon vapor deposition methods, were deposited on a thin glass substrate without the use of any chemical treatment. Micro-Raman spectroscopy, tip-enhanced Raman spectroscopy (TERS), and tip-enhanced Raman spectroscopy mapping (TERM) were used for characterization of the graphene layers. In particular, TERM allows for the investigation of individual graphene sheets with high Raman signal enhancement factors and allows for imaging of local defects with nanometer resolution. Enhancement up to 560% of the graphene Raman band intensity was obtained using TERS. TERM (with resolution better than 100 nm) showed an increase in the number of structural defects (D band) on the edges of both graphene and graphite regions.     

不同基底石墨烯涂层的层间滑移减磨性能研究

石墨烯薄膜作为一种二维材料,是提高微/纳机电系统(MEMS/NEMS)摩擦力学性能的优异润滑剂.为了探究基底材料和石墨烯层数对其减磨性能的影响,本文通过在不同基底制备了不同层数的石墨烯涂层,利用原子力显微镜(AFM)实验和分子动力学(MD)仿真结合的方法,研究了石墨烯层数对减磨效应的影响.并且通过建立不同层数石墨烯涂层的摩擦性能分析模型,探究出石墨烯层间滑移是产生减磨的主要因素.结果表明:在不同载荷下,石墨烯涂层对硅基底和铜基底均有优异的减磨效果,摩擦力随着石墨烯层数的增加逐渐降低,当石墨烯层数大于10层时,达到最优99.3%的减磨效果.通过仿真分析发现,随着层数增加,石墨烯与基底的干摩擦转变为石墨烯的层间摩擦,并产生层间剪切滑移,石墨烯层间滑移是导致多层石墨烯优异减磨性能的主要因素.     

Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0 0 0 1)

The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03°) than on those with a larger (0.25°). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene-SiC structures.     

Vibrational properties of thin films adsorbed on crystals with strong spatial dispersion

The effect of strong spatial dispersion of the substrate crystal onto the dynamics of thin epitaxially adsorbed films is described in a simple model through the following quantities: i) phonon reflection coefficients ii) depth-dependent local densities of states (LDOS) and iii) finite-lifetime surface states called leaky waves. The correspondence of these three types of characteristics accessible in different experimental methods is established. The bulk band of the substrate crystal consists of two distinct frequency ranges separated by an edge singularity: above the singularity the substrate supports two different waves for a given frequency, whereas only one wave can exist for each frequency in the low-frequency range. The resonances in the low-frequency range are found to correspond to maxima in the LDOS, to maxima in the amplitude of a near field arising in phonon reflection and to leaky waves involving a single leakage wave packet. The antiresonances in the same frequency range are characterised by minima in LDOS and in the near field, whereas the corresponding leaky waves involve two leakage wave packets. The only leaky waves found in the high-frequency range involve two leakage wave packets and are related to resonances. The antiresonances then are characterised by an anomalous increase in the extraordinary reflected wave. The edge singularity manifests itself in an additional quasi resonance, whose features depend on the coupling between the substrate and the thin film.     

Real-space imaging of alternate localization and extension of quasi-two-dimensional electronic States at graphite surfaces in magnetic fields

We measured the local density of states (LDOS) of a quasi-two-dimensional (2D) electron system near point defects on a surface of highly oriented pyrolytic graphite with scanning tunneling microscopy and spectroscopy. Differential tunnel conductance images taken at very low temperatures and in high magnetic fields show a clear contrast between localized and extended spatial distributions of the LDOS at the valley and peak energies of the Landau level spectrum, respectively. The localized electronic state has a single circular distribution around the defects with a radius comparable to the magnetic length. The localized LDOS is in good agreement with a spatial distribution of a calculated wave function for a single electron in 2D in a Coulomb potential in magnetic fields.     

基于石墨烯基底的光催化特性

金属纳米结构中传导电子的集体振荡所产生的表面等离子体不仅可以使电磁场在时间和空间上重新分布,还可以使被激发的载流子重新分布.采用机械剥离法制备了石墨烯材料,借助拉曼光谱扫描技术(M apping)研究了石墨的层数在二维区域内的分布情况.研究了2-萘硫醇(2-N T)作为探针分子在石墨烯衬底上的SERS增强特性.结果表明...     

Deformation and scattering in graphene over substrate steps

The electrical properties of graphene depend sensitively on the substrate. For example, recent measurements of epitaxial graphene on SiC show resistance arising from steps on the substrate. Here we calculate the deformation of graphene at substrate steps, and the resulting electrical resistance, over a wide range of step heights. The elastic deformations contribute only a very small resistance at the step. However, for graphene on SiC(0001) there is strong substrate-induced doping, and this is substantially reduced on the lower side of the step where graphene pulls away from the substrate. The resulting resistance explains the experimental measurements.     

Radiative and non-radiative local density of states on disordered plasmonic films

We present numerical calculations of the local density of optical states (LDOS) in the near field of disordered plasmonic films. The calculations are based on an integral volume method, that takes into account polarization and retardation effects, and allows us to discriminate radiative and non-radiative contributions to the LDOS. At short distance, the LDOS fluctuations are dominated by non-radiative channels, showing that changes in the spontaneous dynamics of dipole emitters are driven by non-radiative coupling to plasmon modes. Maps of radiative and non-radiative LDOS exhibit strong fluctuations, but with substantially different spatial distributions.     

Interplay between edge states and simple bulk defects in graphene nanoribbons

We study the interplay between the edge states and a single impurity in a zigzag graphene nanoribbon. We use tight-binding exact diagonalization techniques, as well as density functional theory calculations to obtain the eigenvalue spectrum, the eigenfunctions, as well as the dependence of the local density of states (LDOS) on energy and position. We study the strictly zero-energy eigenfunctions using symmetry considerations, as well as tight-binding techniques. Moreover, we note that roughly half of the unperturbed eigenstates in the spectrum of the finite-size ribbon hybridize with the impurity state, and the corresponding eigenvalues are shifted with respect to their unperturbed values. The maximum shift and hybridization occur for a state whose energy is inverse proportional to the impurity potential, and give rise to an impurity peak in the DOS spectrum. We find that the interference between the impurity and the edge gives rise to peculiar modifications of the LDOS of the nanoribbon, in particular to oscillations of the edge LDOS. These effects depend on the size of the system, and decay with the distance between the edge and the impurity.     

The effect of gradually constricted channel on the I–V characteristics of graphene sheets

Ideal graphene is a gapless semiconductor consisting of a single layer of carbon atoms regularly arranged in a honeycomb lattice having infinite spatial extent in the (x,y)-plane, in which electrons behave as Dirac massless fermions. Even neglecting interactions with the anchoring substrate, a graphene sheet in real world has finite extent, leading to distinctive features in the conductivity of a given sample. In this letter we study the effect of a gradual channel constriction in graphene nanoribbons on their I–V characteristics, using non-equilibrium Green's function formalism. The constriction width and the border cutting angle are the main parameters to be varied. We found that transmission through the channel is considerably affected by these parameters, presenting sharp peaks at specific energies, which can be attributed to a resonance due to the tuning of energy eigenvalues.     

Spatial imaging of two-dimensional electronic states in semiconductor quantum wells

We measure the spatial distribution of the local density of states (LDOS) at cleaved surfaces of InAs/GaSb isolated quantum wells and double quantum wells (DQWs) by low-temperature scanning tunneling spectroscopy. Distinct standing wave patterns of LDOS corresponding to subbands are observed. These LDOS patterns and subband energies agree remarkably well with simple calculations with tip-induced band bending. Furthermore, for the DQWs, coupling of electronic states between the quantum wells is also clearly observed.     

β-NaGdF4纳米球中Tb3+-Er3+下转换对局域态密度的尺寸效应

以Span 80 为模板,采用水热法合成了不同尺寸（4.7~115.5 nm）的β-NaGdF₄：1%Tb³⁺,1%Er³⁺ 纳米晶（NCs）。在Rayleigh限（粒子尺寸小于跃迁波长）下,研究了纳米晶尺寸对局域态密度（Local density of states,LDOS）的影响以及镶嵌在β-NaGdF₄纳米球中的Tb³⁺-Er³⁺的辐射和无辐射特性,进一步揭示下转换过程的物理机制。基于Tb³⁺-Er³⁺ 处在 β-NaGdF₄纳米球中的模型,用Green函数方法计算了Tb³⁺-Er³⁺ 发射体的自发发射速率。在介电纳米球内,Tb³⁺-Er³⁺发射体的LDOS没有显著的变化。在小尺寸（R<<λ）介电纳米球外,按照Chew的理论,发现LDOS有一个类-Gauss分布。如果R>35 nm（在本实验条件下）,介电纳米球外则只能观测到LDOS 的下降边,LDOS与局域场强的平方E²成正比,因而LDOS的类高斯分布出现的原因应归于小尺寸发射体与局域场相互作用的增强。通过计算纳米晶尺寸与体材料自发辐射速率的比值可直接确定纳米材料中的填充因子。