钙钛矿阵列化组装及其多功能探测器的应用

钙钛矿材料优异的光电性能使其在高集成、 高性能、 多功能光电探测领域具有广泛的应用前景. 近年来, 科研人员致力于钙钛矿阵列化探测器的研究, 并取得了一系列重要的成果. 本文重点评述了钙钛矿材料的阵列化及其多功能探测器的制备和应用, 介绍了钙钛矿材料的结构分类、 阵列化集成方法及光电探测器的基本器件类型和性能指标, 并进一步阐述了基于钙钛矿一维阵列的高性能光电探测器及其多功能探测器的相关应用研究进展. 最后, 对该研究领域未来的发展方向进行了总结和展望.     

无机卤化物钙钛矿纳米结构的带隙可调制备及光电应用研究

在半导体领域,通过合金化集成两种以上半导体的单纳米结构近年来相继问世,随着纳米材料的成分变化,可以灵活实现半导体的带隙调控,在光通信以及集成光电器件领域有着广泛的应用。然而,传统半导体纳米结构因不同成分之间存在晶格失配,其带隙调节的范围受到了很大限制。因此,钙钛矿作为对晶格失配具有高容忍度的半导体材料,在半导体带隙调控及器件研究领域显示出了巨大的潜力。本文综述了无机卤化物钙钛矿一维合金纳米材料的合成方法以及近年来的研究进展,总结了可调带隙钙钛矿一维合金纳米材料在光电子器件领域中的应用,包括波长可调谐纳米激光器、光电探测器、白光发光二极管、全光开关、太阳能电池等。实现单纳米结构带隙工程将对未来集成器件的发展产生深远的影响。     

反溶剂法快速合成高效发光二维锡卤钙钛矿材料

铅卤钙钛矿材料由于其优异的光电性质而受到了广泛关注. 但是, 材料中铅的毒性问题极大地阻碍了其大规模应用. 因此, 寻找与铅卤钙钛矿具有相似光电性质的非铅卤化物钙钛矿材料十分重要. 其中, 锡基卤化物钙钛矿被认为是铅基钙钛矿材料最佳的替代材料之一. 本文通过简便的反溶剂方法, 合成了一系列新型二维(RNH₃)₂SnX₄(R为烷基链, X=Br^-, I^-)钙钛矿材料. 研究结果表明, 所合成的材料具有优异的荧光发射性质, 发光量子效率高达98.5%, 比三维ASnX₃[A=Cs⁺, 甲胺(MA⁺), 甲脒(FA⁺)等]型钙钛矿表现出更好的稳定性. 本文所采用的合成方法简单易行, 有利于实现金属卤化物钙钛矿材料的大规模合成及在固态照明器件和显示器件领域的工业应用.     

金属卤化物钙钛矿纳米晶高效发光二极管的制备与器件性能优化

金属卤化物钙钛矿作为一类新型的离子型直接带隙半导体材料在电致发光二极管(LED)中有着重要应用前景. 但实现其应用的前提在于金属卤化物钙钛矿材料需要保持高的发光效率和好的稳定性. 为了提高金属卤化物钙钛矿作为LED发光层的激子结合效率, 从而提升其发光效率, 设计和合成金属卤化物钙钛矿纳米晶材料是一个有效途径. 目前, 基于纳米晶材料设计的金属卤化物钙钛矿LED在绿光和红光(包括近红外光)范围已经展现了高的发光亮度和外量子效率(EQE), 其中最高EQE已经超过了20%, 但其稳定性仍无法满足器件应用的要求. 此外, 更值得关注且更重要的是, 蓝光钙钛矿LED的发光亮度和EQE目前仍然不高. 如何制备高效、 稳定的金属卤化物钙钛矿纳米晶LED, 特别是蓝光LED, 是一个具有重大应用前景且具有挑战性的课题. 本文重点介绍了金属卤化物钙钛矿纳米发光层的结构设计和合成方法及金属卤化物钙钛矿LED的研究进展, 分析了金属卤化物钙钛矿LED不稳定的原因, 并对金属卤化物钙钛矿LED研究面临的挑战和未来发展方向进行了总结与展望.     

溶液法生长大面积超薄钙钛矿单晶薄膜

卤化物钙钛矿由于其独特的光电性质,在薄膜光电子器件领域具有极大潜力1。虽然许多工作都集中在多晶钙钛矿材料上,但单晶钙钛矿比多晶具有更低的缺陷态密度、更好的载流子输运能力和更高的稳定性2,3,可以有有效减少甚至消除载流子输运过程中的散射损失以及在晶界处的非辐射性复合4。采用单晶钙钛矿薄膜作为器件活性层被认为是进一步提高钙钛矿光电子器件性能的理想方案。目前,研究报道的钙钛矿单晶薄膜生长方法主要通过化学气相沉积和溶液空间限制法5,6,然而,所制备的薄膜厚度往往较厚,相应的器件性能也没有多晶薄膜的器件高7,因此,生长高质量的超薄大面积钙钛矿单晶薄膜至关重要。     

PbO-PbI2复合物膜转化的CH3NH3PbI3钙钛矿薄膜及其光电特性

有机-无机卤化物钙钛矿是一类优异的光电材料. 在过去四年内, 基于有机-无机卤化物钙钛矿的光电器件实现了超过15%的光电转换效率. 而有机-无机卤化物钙钛矿材料的可控制备是保证其在光电器件中应用的基础. 本文采用新的沉积方法在玻璃衬底表面制备了一种典型的有机-无机卤化物钙钛矿CH₃NH₃PbI₃薄膜. 其制备过程是: 采用超声辅助的连续离子吸附与反应法在玻璃衬底表面沉积PbO-PbI₂复合物膜, 之后与CH3NH3I蒸汽在110 ℃环境下反应, 将PbO-PbI₂复合物膜转化成CH₃NH₃PbI₃钙钛矿薄膜. 对CH₃NH₃PbI₃薄膜的微观结构, 结晶性及其光电性能等进行了表征. 结果表明, CH₃NH₃PbI₃薄膜呈晶态, 具有典型的钙钛矿晶体结构. 薄膜表面形貌均匀, 晶粒尺寸超过400 nm. 在可见光范围, CH₃NH₃PbI₃薄膜透过率低于10%, 能带宽度为1.58eV. 电学性能研究表明CH₃NH₃PbI₃薄膜表面电阻率高达1000 MΩ. 高表面电阻率表明CH₃NH₃PbI₃薄膜具有一定的介电性能, 其介电常数(ε_r)在100 Hz时达到155. 本研究提出了一种制备高质量CH₃NH₃PbI₃钙钛矿薄膜的新方法, 所得CH₃NH₃PbI₃薄膜可望在光、电及光电器件中得到应用.     

锡基钙钛矿太阳能电池研究进展

自2009年以来,有机-无机卤化物钙钛矿因其独特的光学和电学性能,在光电材料领域受到了广泛的研究,尤其是Pb基的卤化物钙钛矿太阳能电池,目前光电转换效率高达创纪录的约25.2%,显示出强大的商业化潜力。然而,Pb元素的毒性及因而导致的环境隐患问题,一直是其产业化过程中的顾虑之一。因此,寻求能替代Pb的环境友好的元素,是一个十分重要的课题。Pb基钙钛矿材料优异的光电特性来源于Pb²⁺的最外层6s2孤对电子,与Pb元素同主族的Sn元素能够形成三维钙钛矿结构且同样具有惰性5s2外层电子结构,因而是替代Pb的首选。本文系统地介绍了Sn基钙钛矿的光学和电学性质,并从薄膜制备方法和不同的器件结构方面介绍Sn基钙钛矿太阳能电池的最新进展。     

二维钙钛矿材料及其在光电器件中的应用

二维钙钛矿作为一种新型光电材料,既具有二维材料的可溶液加工、柔性、可穿戴性以及廉价容易制备等特点,又具备钙钛矿材料结晶度高、载流子迁移率高、激子束缚能低、量子效率高、吸收光谱宽、光吸收系数高和能耗损失低等特性,已经成为材料研究领域的热点而受到广泛关注。本文深入分析了二维钙钛矿材料的组成特点及结构构建规则,探究了其光电特性、能带性质以及非线性光学性质等,对二维钙钛矿光电材料常见的两大类制备方法液相法和气相法进行了归纳,总结了二维钙钛矿材料在太阳能电池、光电探测器、发光二极管、场效应晶体管和激光等光电器件领域的应用现状,最后对该类材料目前存在的主要问题及未来发展前景进行了展望,以期为设计制备高性能二维钙钛矿光电材料提供参考。     

钙钛矿基近红外光电探测器

近年来,具有ABX₃晶体结构的金属卤化物钙钛矿材料因其可调带隙、高吸收系数、长载流子传输距离等光电学特性而在光电探测领域表现出良好应用前景,尤其是基于纯Sn或者Sn/Pb混合阳离子制备的杂化钙钛矿在760～1050nm范围的近红外光电响应性能非常优异,展现出高灵敏度、低暗电流和高探测率等多方面优势。为进一步拓宽钙钛矿的近红外以及红外响应波长范围,研究人员探索了将有机材料、晶体硅/锗、Ⅲ-Ⅴ族化合物、Ⅳ-Ⅵ族化合物、上转换荧光材料等作为互补光吸收层与钙钛矿结合制备异质结来构筑出宽谱响应的近红外光电探测器。基于以上研究,本文总结了当前拓宽钙钛矿光电探测器的光谱范围的有效途径。同时,对钙钛矿材料的近红外光电探测器的未来发展前景作出了展望。     

高效医学传感钙钛矿材料研究进展

卤化物钙钛矿材料作为一种新型半导体材料，具有优异的光电转换特性、能级结构可调、易于加工、结构和尺寸以及形貌可调、改性后优异的生物相容性等优点，在医学检测传感器中具有广阔的应用前景。本综述讨论了钙钛矿材料在生物医学传感领域的研究进展，钙钛矿医学传感器能通过光电转换、全光转换、电催化等多种物理或化学机制实现传感，具有可灵活选择的器件结构、性能指标和信号传递方式，用于人体代谢物质、神经递质、癌症相关物质和药物等医学物质的检测。钙钛矿医学传感器将为未来的医工多学科融合提供新希望，加快医工融合发展。     

Organic Matrix Assisted Low-temperature Crystallization of Black Phase Inorganic Perovskites

All-inorganic perovskites have attracted increasing attention for applications in perovskite solar cells (PSCs) and optoelectronics, including light-emitting devices (LEDs). Cesium lead halide perovskites with tunable I/Br ratios and a band gap aligning with the sunlight region are promising candidates for PSCs. Although impressive progress has been made to improve device efficiency from the initial 2.9 % with low phase stability to over 20 % with high stability, there are still questions regarding the perovskite crystal growth mechanism, especially at low temperatures. In this Minireview, we summarize recent developments in using an organic matrix, including the addition and use of organic ions, polymers, and solvent molecules, for the crystallization of black phase inorganic perovskites at temperatures lower than the phase transition point. We also discuss possible mechanisms for this low-temperature crystallization and their effect on the stability of black phase perovskites. We conclude with an outlook and perspective for further fabrication of large-scale inorganic perovskites for optoelectronic applications.     

Recent advances of lead-free metal halide perovskite single crystals and nanocrystals: synthesis,crystal structure,optical properties,and their diverse applications

Lead halide hybrid perovskites have received massive research attention because of their unique inherent photophysical properties that driven them for potential application in the fields of photovoltaics, light-emitting devices, lasing, X-ray detector, and so on. Perovskite single crystals and nanocrystals are generally synthesized via various low-cost solution-processed techniques. The emergence of simple growth approaches of perovskite structures enable to fabricate low-cost and highly efficient devices. However, toxicity of Pb atoms and instability of perovskite structures obstruct further commercialization of these technologies. Recent efforts have been shifted to discover novel, eco-friendly, and stable lead-free metal halide perovskite (LFHP) materials and exploring their different growth processes for various device applications. This review aims to provide an up-to-date analysis of recent progress report on LFHPs and will mainly focus on their growth processes in the single crystalline and nanocrystalline forms. This review also tries to understand how the perovskite crystal structure impacts on their fundamental properties. In addition, we discuss the current progress in various field of applications and their future aspects.     

Halide Chemistry in Tin Perovskite Optoelectronics: Bottlenecks and Opportunities

Tin halide perovskites (Sn HaPs) are the top lead-free choice for perovskite optoelectronics, but the oxidation of perovskite Sn²⁺ to Sn⁴⁺ remains a key challenge. However, the role of inconspicuous chemical processes remains underexplored. Specifically, the halide component in Sn HaPs (typically iodide) has been shown to play a key role in dictating device performance and stability due to its high reactivity. Here we describe the impact of native halide chemistry on Sn HaPs. Specifically, molecular halogen formation in Sn HaPs and its influence on degradation is reviewed, emphasising the benefits of iodide substitution for improving stability. Next, the ecological impact of halide products of Sn HaP degradation and its mitigation are considered. The development of visible Sn HaP emitters via halide tuning is also summarised. Lastly, halide defect management and interfacial engineering for Sn HaP devices are discussed. These insights will inspire efficient and robust Sn HaP optoelectronics.     

2D Cadmium Chalcogenides for Optoelectronics

Two-dimensional(2D) cadmium chalcogenides have triggered worldwide interests due to their unique merits in both structure and physical properties, including thickness-dependent bandgaps, narrow emission line widths, high intrinsic absorption coefficient and large absorption cross sections, etc., rendering their great potential for next-generation electronics and optoelectronics devices. In this article, the progress of 2D cadmium chalcogenides in the past few years is comprehensively reviewed. We first discussed several synthetic strategies for various 2D cadmium chalcogenides. Then, their optoelectronic applications in photodetectors, lasers, LEDs, and piezoelectric devices are summarized and commented in detail. Finally, a brief conclusion of the article and the future prospects of the 2D cadmium chalcogenides are provided.     

Rapid Growth of Halide Perovskite Single Crystals: From Methods to Optimization Control

Metal halide perovskites are emerging as new generation optoelectronic materials due to their high carrier mobility, long carrier diffusion length and large light absorption coefficient, which have broad applications in solar cell, light‐emitting diode, laser, photodetector and transistors. Perovskite single crystal is an ideal platform for discerning the intrinsic properties of these materials. In some cases, perovskite single crystals are better candidates to gain high performance optoelectronics. However, the growth of perovskite single crystals is time and cost consuming, which has an obvious disadvantage for device exploration. Therefore, fast growth technique is highly desirable in not only promoting the use of perovskites in commercial applications but also facilitating deep physical investigation of the materials. In this review, we summarize thoroughly the development of fast growth of the halide perovskites single crystal. Specifically, we highlight the progress of rapid growth techniques with emphasis on the optimization control.     

钙钛矿二维纳米材料的合成和发光研究进展

钙钛矿纳米材料的研究取得了飞速发展:一方面,合成方法不断涌现,已经可以实现从零维纳米晶、一维纳米线到二维纳米片的形貌精确控制,对其尺寸和维度依赖的光学性质认识也不断深入;另一方面,钙钛矿纳米材料的光学和光电子应用也得到了快速发展,其中,基于钙钛矿量子点的光致发光和电致发光技术最受关注。 由于钙钛矿的天然层状结构,通过配体调控很容易制备出二维纳米材料,其发光性能可以通过层数和组分进行调节,最高量子产率超过85%,且具有偏振发光特性,有望成为一类新型发光材料。 本文从制备方法、光致发光和电致发光应用等方面综述了基于钙钛矿二维纳米材料的进展,并对其未来的发展方向进行讨论。     

Using steric hindrance to manipulate and stabilize metal halide perovskites for optoelectronics

The chemical instability of metal halide perovskite materials can be ascribed to their unique properties of softness, in which the chemical bonding between metal halide octahedral frameworks and cations is the weak ionic and hydrogen bonding as in most perovskite structures. Therefore, various strategies have been developed to stabilize the cations and metal halide frameworks, which include incorporating additives, developing two-dimensional perovskites and perovskite nanocrystals, etc. Recently, the important role of utilizing steric hindrance for stabilizing and passivating perovskites has been demonstrated. In this perspective, we summarize the applications of steric hindrance in manipulating and stabilizing perovskites. We will also discuss how steric hindrance influences the fundamental kinetics of perovskite crystallization and film formation processes. The similarities and differences of the steric hindrance between perovskite solar cells and perovskite light emission diodes are also discussed. In all, utilizing steric hindrance is a promising strategy to manipulate and stabilize metal halide perovskites for optoelectronics.

Manipulation on steric hindrance can influence the fundamental kinetics of perovskite crystallization and film formation, therefore stabilizing and passivating perovskite structures, and promoting the commercialization of stable perovskite devices.