The quantum hall effect for electrons in a random potential

We assume the existence of sufficiently localised states, near the edges of each Landau band. We then prove that the Hall conductivity is quantised and the parallel conductivity vanishes, when the filling factor stays close to an integer. The Hall integer is a topological invariant, given by the Landau band index. We also prove that at weak disorder, the localisation length diverges in each Landau band.     

Lattice electrons on a cylinder surface in the presence of rational magnetic flux and disorder

We consider a disordered two-dimensional system of independent lattice electrons in a perpendicular magnetic field with rigid confinement in one direction and generalized periodic boundary conditions (GPBC) in the other direction. The objects investigated numerically are the orbits in the plane spanned by the energy eigenvalues and the corresponding center of mass coordinate in the confined direction, parameterized by the phase characterizing the GPBC. The Kubo Hall conductivity is expressed in terms of the winding numbers of these orbits. For vanishing disorder the spectrum of the system consists of Harper bands with energy levels corresponding to the edge states within the band gaps. Disorder leads to broadening of the bands. For sufficiently large systems localized states occur in the band tails. We find that within the mobility gaps of bulk states the Diophantine equation determines the value of the Hall conductivity as known for systems with torus geometry (PBCs in both directions). Within the spectral bands of extended states the Hall conductivity fluctuates strongly. For sufficiently large systems the generic behavior of localization-delocalization transitions characteristic for the quantum Hall effect are recovered.     

Topological investigation of the fractionally quantized Hall conductivity

Using the fiber bundle concept developed in geometry and topology, the fractionally quantized Hall conductivity is discussed in the relevant many-particle configuration space. Electronmagnetic field and electron-electron interactions under FQHE conditions are treated as functional connections over the torus, the torus being the underlying two-dimensional manifold. Relations to the (2 + 1)-dimensional Chern-Simons theory are indicated. The conductivity being a topological invariant is given as e²/h times a linking number which is the quotient of the winding numbers of the self-consistent field and the magnetic field, respectively. Odd denominators are explained by the two spin structures which have been considered for the FQHE correlated electron system.     

Abelian and non-abelian Hall liquids and charge-density wave: quantum number fractionalization in one and two dimensions

Previously, we have demonstrated that, on a torus, the Abelian quantum Hall liquid is adiabatically connected to a charge-density wave as the smaller dimension of the torus is varied. In this work, we extend this result to the non-Abelian bosonic Hall state. The outcome of these works is the realization that the paradigms of quantum number fractionalization in one dimension (polyacetylene) and two dimensions (fractional quantum Hall effect) are, in fact, equivalent.     

A Study on Hall Voltage and Electrical Resistivity of Doped Conducting Polyaniline

We report the electrical resistivity of HCl doped polyaniline in the temperature range 77 T 300 K. A maximum is obtained in the conductivity versus concentration of HCl curve at 3(N) HCl. The resistivity of the sample has been observed to show a decreasing trend with increase in temperature. The resistivity obeys the Mott variable range hopping theory. The Mott characteristic temperature (T _Mott) is very low in this sample compared to other studies. The Hall voltages have been found to be negative. The Hall coefficient, carrier concentration, and density of states have been determined from Hall measurement. From the conductivity versus temperature plot, different physical quantities such as localisation length and molecular vibrational frequency have been determined.     

Comments on the equilibrium theory of the quantum hall effect

The relation between the thermal equilibrium Hall conductivity generated by minimal gauge transformation and the isolated Hall conductivity given by the Kubo formula is investigated. The contribution of the edge states and some general questions concerning the definition of the equilibrium Hall conductivity are discussed. It is shown that, in the case of an additive electron-impurity system, the two Hall conductivities coincide as long as the Fermi energy is situated in an energy gap.     

Vertex corrections to the anomalous Hall effect in spin-polarized two-dimensional electron gases with a Rashba spin-orbit interaction

We study the effect of disorder on the intrinsic anomalous Hall conductivity in a magnetic two-dimensional electron gas with a Rashba-type spin-orbit interaction. We find that anomalous Hall conductivity vanishes unless the lifetime is spin-dependent, similar to the spin Hall conductivity in the nonmagnetic system. In addition, we find that the spin Hall conductivity does not vanish in the presence of magnetic scatterers.     

Weak localization corrections to the anomalous Hall effect

We calculate localization corrections to the anomalous Hall conductivity in the framework of side-jump and skew scattering mechanisms. In contrast to the ordinary Hall effect, there exists a nonvanishing localization correction to the anomalous Hall resistivity. The correction to the anomalous Hall conductivity vanishes in case of side-jump mechanism, but is nonzero for the skew scattering.     

Ab initio calculation of the intrinsic spin Hall effect in semiconductors

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs, and AlAs is large [approximately 100(planck/e)(Omega cm)(-1)], showing the possibility of a spin Hall effect beyond the four-band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the ac spin Hall conductivity is large in pure as well as doped semiconductors.     

Theory of the phonon Hall effect in paramagnetic dielectrics

Based upon Raman spin-lattice interaction, we propose a theoretical model for the phonon Hall effect in paramagnetic dielectrics, which was discovered recently in an experiment [C. Strohm, G. L. J. A. Rikken, and P. Wyder, Phys. Rev. Lett. 95, 155901 (2005).]. The phonon Hall effect is revealed to be a phonon analogue to the anomalous Hall effect in electron systems. The thermal Hall conductivity is calculated by using the Kubo formula. Our theory reproduces the essential experimental features of the phonon Hall effect, including the sign, magnitude, and linear magnetic field dependence of the thermal Hall conductivity.     

Hall Conductivity in the Cosmic Defect and Dislocation Spacetime

Influences of topological defect and dislocation on conductivity behavior of charge carriers in external electromagnetic fields are studied.Particularly the quantum Hall effect is investigated in detail.It is found that the nontrivial deformations of spacetime due to topological defect and dislocation produce an eiectric current at the leading order of perturbation theory.This current then induces a deformation on the Hall conductivity.The corrections on the Hall conductivity depend on the external electric fields,the size of the sample and the momentum of the particle.     

The conductivity of a two-dimensional electronic system of finite width in the presence of a strong perpendicular magnetic field and a random potential

Starting from the Kubo formula the conductivity tensor of a two-dimensional electronic system in a perpendicular magnetic field is evaluated. It is shown that at zero temperature only the states at the Fermi level contribute. The Hall conductivity of a purely periodic system of finite width is calculated and compared with earlier suggestions by Thouless et al. For a system described by a periodic and a random potential the Hall conductivity is calculated as a function of the electron density. The results emphasize the importance of disorder independent current carrying states for the Quantum Hall effect which extend along the boundaries of the system. The plateaux values of the Hall conductivity are related to the number of these states, and are independent of the existence of extended bulk states below the Fermi energy.     

Anomalous Hall effect of heavy holes in III-V semiconductor quantum wells

The anomalous Hall effect of heavy holes in semiconductor quantum wells is studied in the intrinsic transport regime, where the Berry curvature governs the Hall current properties. Based on the first--order perturbation of wave function the expression of the Hall conductivity the same as that from the semiclassical equation of motion of the Bloch particles is derived. The dependence of Hall conductivity on the system parameters is shown. The amplitude of Hall conductivity is found to be balanced by a competition between the Zeeman splitting and the spin--orbit splitting.     

Modular invariance,universality and crossover in the quantum Hall effect

An analytic form for the conductivity tensor in crossover between two quantum Hall plateaux is derived, which appears to be in good agreement with existing experimental data. The derivation relies on an assumed symmetry between quantum Hall states, a generalisation of the law of corresponding states from rational filling factors to complex conductivity, which has a mathematical expression in terms of an action of the modular group on the upper-half complex conductivity plane. This symmetry implies universality in quantum Hall crossovers. The assumption that the β-function for the complex conductivity is a complex analytic function, together with some experimental constraints, results in an analytic expression for the crossover, as a function of the external magnetic field.     

Screw dislocation-induced influence of transverse modes on Hall conductivity

The Hall conductivity of an electron gas on an interface showing a topological defectcalled screw dislocation is investigated. This kind of defect induces a singular torsionon the medium which in turn induces transverse modes in the quantum Hall effect. It isshown that this topology decreases the plateaus’ widths and shifts the steps in the Hallconductivity to lower magnetic fields. The Hall conductivity is neither enhanced nordiminished by the presence of this kind of defect alone. We also consider the presence oftwo defects on a sample, a screw dislocation together with a disclination. For a specificvalue of deficit angle, there is a reduction in the Hall conductivity. For an excess ofangle, the steps shift to higher magnetic fields and the Hall conductivity is enhanced.Our work could be tested only in common semiconductors but we think it opens a road to theinvestigation on how topological defects can influence other classes of Hall effect.     

Geometric invariants of the quantum Hall effect

We study the two-dimensional Hall effect with a random potential. The Hall conductivity is identified as a geometric invariant associated with an algebra of observables. Using the pairing betweenK-theory and cyclic cohomology theory, we identify this geometric invariant with a topological index, thereby giving the Hall conductivity a new interpretation.Supported in part by the National Science Foundation under Grant No. DMS-8717185     

Topological nature of the phonon Hall effect

We provide a topological understanding of the phonon Hall effect in dielectrics with Raman spin-phonon coupling. A general expression for phonon Hall conductivity is obtained in terms of the Berry curvature of band structures. We find a nonmonotonic behavior of phonon Hall conductivity as a function of the magnetic field. Moreover, we observe a phase transition in the phonon Hall effect, which corresponds to the sudden change of band topology, characterized by the altering of integer Chern numbers. This can be explained by touching and splitting of phonon bands.     

Many-body generalization of the Z2 topological invariant for the quantum spin Hall effect

We propose a many-body generalization of the Z2 topological invariant for the quantum spin Hall insulator, which does not rely on single-particle band structures. The invariant is derived as a topological obstruction that distinguishes topologically distinct many-body ground states on a torus. It is also expressed as a Wilson loop of the SU(2) Berry gauge field, which is quantized due to time-reversal symmetry.     

The Haldane-Rezayi quantum Hall state and conformal field theory

We propose field theories for the bulk and edge of a quantum Hall state in the universality class of the Haldane-Rezayi wavefunction. The bulk theory is associated with the c = −2 conformal field theory. The topological properties of the state, such as the quasiparticle braiding statistics and ground state degeneracy on a torus, may be deduced from this conformal field theory. The 10-fold degeneracy on a torus is explained by the existence of a logarithmic operator in the c = −2 theory; this operator corresponds to a novel bulk excitation in the quantum Hall state. We argue that the edge theory is the c = 1 chiral Dirac fermion, which is related in a simple way to the c = −2 theory of the bulk. This theory is reformulated as a truncated version of a doublet of Dirac fermions in which the SU(2) symmetry - which corresponds to the spin-rotational symmetry of the quantum Hall system - is manifest and non-local. We make predictions for the current-voltage characteristics for transport through point contacts.     

Hall viscosity and electromagnetic response

We show that, for Galilean invariant quantum Hall states, the Hall viscosity appears in the electromagnetic response at finite wave numbers q. In particular, the leading q dependence of the Hall conductivity at small q receives a contribution from the Hall viscosity. The coefficient of the q(2) term in the Hall conductivity is universal in the limit of strong magnetic field.