Estimation of various scattering parameters and 2-DEG mobilities from electron mobility calculations in the three conduction bands Γ, L and X of gallium arsenide

The electron drift mobility in Γ conduction band of GaAs has been calculated before, but for the first time, we have made attempts to estimate the electron mobilities in higher energy L and X minima. We have also calculated the value of mobility of two-dimensional electron gas needed to predict hetero-structure device characteristics using GaAs. Best scattering parameters have been derived by close comparison between experimental and theoretical mobilities. Room temperature electron mobilities in Γ, L and X valleys are found to be nearly 9094, 945 and 247 cm²/V-s respectively. For the above valleys, the electron masses, deformation potentials and polar phonon temperatures have been determined to be (0.067, 0.22, 0.39m ₀), (8.5, 9.5, 6.5 eV), and (416, 382, 542 K) as best values, respectively. The 2-DEG electron mobility in Γ minimum increases to 1.54 × 10⁶ from 1.59 × 10⁵ cm²/V-s (for impurity concentration of 10¹⁴ cm⁻³) at 10 K. Similarly, the 2-DEG electron mobility values in L and X minima are estimated to be 2.28 × 10⁵ and 1.44 × 10⁵ cm²/V-s at 10 K, which are about ∼4.5 and ∼3.9 times higher than normal value with impurity scattering present.      

Exciton transitions in photoluminescence spectra of AIAs/GaAs superlattices

Conclusions The studies performed here have shown that the superlattice samples studied exhibit photoluminescence spectra which agree with the Kronig-Penney model, although in calculating the energies of the radiative transitions it is necessary to take into account the binding energy of the excitons,E _B. Due to the exciton—phonon interaction, the 1HH peak breaks up on the long wavelength side into a Poisson distribution. The energy of the LO phonon so determined is 34 meV. Bands due toD ⁰-A ⁰ andD ⁰X transitions, caused by remaining low-level impurities in the GaAs crystals are also observed. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 61, Nos. 3–4, pp. 241–245, September–October, 1994.     

Physical properties of n-CdGeAs2 single crystals prepared by low-temperature crystallization

The first results obtained in studies of the temperature dependences of electrical conductivity and Hall constant of n-CdGeAs₂ single crystals prepared by low-temperature crystallization are reported. It has been established that the method developed permits growing single crystals with a free-electron concentration ⋍(1−2)×10¹⁸ cm⁻³ and a Hall mobility ⋍10000 cm²/(Vs) at T=300 K. It is shown that the temperature dependence of Hall mobility exhibits a behavior characteristic of electron scattering by lattice vibrations, whereas below 150 K a deviation from this law is observed to occur evidencing an increasing contribution of static lattice defects to scattering. The Hall mobility in the crystals prepared was found to reach ⋍36000 cm²/(Vs) at 77 K. Photosensitive heterojunctions based on n-CdGeAs₂ single crystals were prepared. The spectral response of the photosensitivity of these structures is analyzed. It is concluded that this method is promising for preparation of perfect CdGeAs₂ crystals. Fiz. Tverd. Tela (St. Petersburg) 41, 1190–1193 (July 1999)     

Electron tunneling in the GaAs/AlAs(111) structures with a smooth potential at heteroboundaries

The effect of smooth interface potential on the electron tunneling in the GaAs/AlAs(111) structures with thin layers is studied using the pseudopotential method. The transition region between the structure components is represented by a half-period of the hexagonal (GaAs) ₃(AlAs)₃ (111) superlattice. It is shown that the allowance for the smooth potential results in a decrease in the Γ-L-mixing, Fano-resonance narrowing, and disappearance of interface states at the GaAs/AlAs(111) interface as compared to the abrupt-interface model. The shifts of the lowest Γ-and L-resonances observed for the structures with the layer thickness <2 nm amount to ∼0.1 eV, which is in good agreement with the behavior of levels in quantum wells. The transmission coefficient of electrons with the energies 0–0.5 eV above the GaAs conduction-band bottom obtained by multivalley calculation is close to that calculated with allowance for the lowest conduction band states Γ ₁ ⁽¹⁾ and Γ ₁ ⁽²⁾ of superlattice and Γ ₁ and L ₁ of binary crystals. This indicates that a two-valley superlattice model of the smooth GaAs/AlAs(111) interface can be developed. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 7–13, July, 2007.     

Ab initio calculations of the deformation potentials for intervalley phonon-assisted transitions in АIIIВV crystals with sphalerite structure

Completely self-consistent ab initio calculations of scattering of electrons between the lowest minima of the conduction band by short-wavelength phonons are performed for the first time for a group of А ^III В ^V semiconductor crystals. The structure constants, electron and vibrational spectra, and probabilities of scattering are calculated for the crystals from unified positions within the electronic density functional method. The theory does not involve any phenomenological assumptions on positions of minima in the conduction band, effective carrier masses, interatomic forces, or scattering probabilities. The electron-phonon coupling constants (the deformation potentials) for actual Γ−X, Γ−L, and X−L transitions for scattering between the nonequivalent X−X and L−L valleys in the conduction bands of AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb crystals with sphalerite structure are calculated. Results obtained are compared with theoretical calculations within the phenomenological rigid ion model and with those performed by the selfconsistent frozen phonon method.     

Oscillator rule of the trap activation energies in NaCl crystals

The energy spectra of traps in NaCl crystals have been studied in detail by the method of thermoluminescence. Crystals of NaCl were undoped but treated thermally in different ways. The activation energies of traps form a single oscillator series, E _n =ℏω _TL (n+1/2), ℏω _TL =903 cm^-1. Contrary to other previously studied crystals with complex lattices, the corresponding line ℏω _Ram =ℏω _TL was not found in Raman spectra of NaCl. It is assumed that the oscillator rule is governed by the polaron nature of traps. The trap activation energy is determined by the vibration level from which the transition of the charge carrier to the excited luminescence centre is made possible and depends on the distance between these centres.     

Comparison of the Seltzer Coefficient C 1 to Experimental Data

Experimental Coulomb isotope shifts δE _Coul from K _α transitions, and radius differences δ〈r ²〉 _eμ measured by electron scattering and muonic atom X-rays were used to derive ‘experimental’ coefficients C _1,exp for 54 isotope pairs of 18 elements from Mo to U. A χ²-analysis shows that these experimental coefficients are – on average – 3.5% lower than the theoretical C ₁ values calculated by Seltzer, or more precisely: C _1,exp=0.965(± 0.014)×C ₁. The need for more accurate theoretical calculations is stressed, and consequences of this deviation are discussed. This revised version was published online in July 2006 with corrections to the Cover Date.     

Polarons in axial transport in single-layer high-T<Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> superconductors

The temperatureT dependencies ρ(T) of normal state electric resistivitiesρ _c (axial) andρ _ab (in plane) of single-layer high-T _c superconductors show common trends: AsT is raised, the resistivity first drops steeply before it starts rising αT above an apparent semiconductor-to-metal crossoverT _cross . To analyze ρ(T) we plottT/ρ againstT at various dopingsx for bothρ _c andρ _ab .T/ρ is inversely proportional to the traversal time across a potential barrier as an ionic particle drifts in an electric field. We findT/ρ in good agreement with theT dependence of the quantum rate of migrating particles: AsT is raised, a zero-point rate at the lowestT is extended to a nearly flat plateau before a thermally activated branch sets in. We also find evidence for the admixture of 1- & 2-phonon absorptions below the Arrhenius range. These features shape the semiconductor-like branch below T _cross . AboveT _cross a metallic-like branch sets in, its αT character deriving from the field coupling of the migrating particle. Our analysis suggests that metal physics may not suffice if ionic features play a role in transport. We attribute our conclusions to the drift of strong-coupling polarons along Cu−O bonds. These “bond polarons” originate from carrier scattering by double-well potentials associated with the bonds. A bond polaron dissociates to a free hole as it passes onto a neighboring O-O link.     

The kappa in J/Ψ↦K<Superscript>+</Superscript>π

BES II data for J/Ψ↦K ^*(890)Kπ reveal a strong κ peak in the Kπ S-wave near threshold. Both magnitude and phase are determined in slices of Kπ mass by interferences with strong K ₀(1430), K ₁(1270) and K ₁(1400) signals. The phase variation with mass agrees within errors with LASS data for Kπ elastic scattering. A combined fit is presented to both BES and LASS data. The fit uses a Breit-Wigner amplitude with an s-dependent width containing an Adler zero. The κ pole is at (760±20(stat)±40(syst)) - i(420±45(stat)±60(syst)) MeV. The S-wave I = 0 scattering length a ₀ = 0.23±0.04 m _π ^-1 is close to the prediction 0.19±0.02 m _π ^-1 of Chiral Perturbation Theory at O(p ⁴). An erratum to this article can be found at .     

Ion flux's pressure dependence in an asymmetric capacitively coupled rf discharge in NF<Subscript>3</Subscript>

Starting from an analytical macroscopic/phenomenological model yielding the self-bias voltage as a function of the absorbed radio-frequency (rf) power of an asymmetric capacitively coupled discharge in NF₃ this paper studies the dependence of the ion flux onto the powered electrode on the gas pressure. An essential feature of the model is the assumption that the ions' drift velocity in the sheath near the powered electrode is proportional to E ^α, where E=−ΔU (U being the self-bias potential), and α is a coefficient depending on the gas pressure and cross section of elastic ion-neutral collisions. The model also considers the role of γ-electrons, stochastic heating as well as the contribution of the active electron current to the global discharge power balance. Numerically solving the model's basic equations one can extract the magnitude of the ion flux (at three different gas pressures) in a technological etching device (Alcatel GIR 220) by using easily measurable quantities, notably the self-bias voltage and absorbed rf power.     

Effects of hydrostatic pressure on CdxHg1−xTe alloys

The hydrostatic pressure effects on Cd_xHg_1−xTe alloys have been investigated. In the relatively low pressure region, we find an anomaly in each Hall coefficient vs. pressure curve for the alloys (x<0.09), which is attributed to the inversion of the Γ₈/Γ₆ energy bands. In the relatively high pressure region, the electrical resistivities of the alloy crystals (x>0.09) show changes of three stages with increase of pressure. The crystal structures corresponding to the three stages are studied by an X-ray diffraction analysis. It is found that the crystal structure of the alloys exhibits transitions from the zinc-blende to the rock salt type and at last to the hexagonal cinnabar type.     

Intervalley electron scattering by phonons in (AlAs)1(GaAs)3(001) superlattices

Intervalley electron scattering by phonons in (AlAs)₁(GaAs)₃(001) superlattices is studied using the pseudopotential method and a phenomenological model of the bonding forces. The deformation potentials between the conduction band extrema of the superlattice involving short-and long-wavelength phonons are calculated. It is shown that the mixing of states from the zinc-blende L valleys plays a greater role in intervalley scattering in a superlattice than the Γ-X mixing. In particular, due to L-L mixing, the Γ-X ₃ transitions, analogous to Γ-L transitions in zinc blende, have higher intensities than the analogues of Γ-X transitions (Γ₁-M ₅ and (Γ₁-Γ₃ transitions). The deformation potentials averaged over the scattering channels in the superlattice agree with the corresponding potentials in a solid solution, but all transitions in the superlattice have higher intensities for the lower states.     

Spectroscopic study of the behavior of the order parameter in model ferroelastic crystals of Hg<Subscript>2</Subscript>Cl<Subscript>2</Subscript>

Information is obtained about the temperature behavior of the order parameter of a phase transition by theoretical and experimental investigation of odd (acoustic and IR-active) phonons that appear in the Raman scattering spectra from the X points of the Brillouin zone (BZ) boundary in the paraphase of Hg₂Cl₂ crystals and are induced by the phase transition, unit-cell doubling, and the X → Γ folding in the BZ. The relevant critical exponents are determined, whose values are in agreement with the results of X-ray diffraction measurements and, within the Landau phenomenological theory of phase transitions, indicate that the phase transition in these crystals is close to the tricritical point.     

Effect of substitution of Ce on superconducting properties of Bi1.7Pb0.3Sr2Ca2−x Ce x Cu3O10+δ system

We have investigated the superconducting properties of the Bi_1.7 Pb_0.3Sr₂Ca_2−xCe _x Cu₃O_10+δ system with x=0.00, 0.02, 0.04, 0.08 and 0.1 by X-ray diffraction and magnetic susceptibility. The substitution of Ce for Ca has been found to drastically change the superconducting properties of the system. X-ray diffraction studies on these compounds indicate decrease in the c-parameter with increased substitution of Ce at Ca site and volume fraction of high T _c (2 : 2 : 2 : 3) phase decreases and low T _c phase increases. The magnetic susceptibility of this compound shows that the diamagnetic on set superconducting transition temperature (onset) varies from 109 K to 51 K for x=0.00, 0.02, 0.04, 0.08 and 0.1. These results suggest the possible existence of Ce in a tetravalent state rather than a trivalent state in this system; that is, Ca²⁺ → Ce⁴⁺ replacement changes the hole carrier concentration. Hole filling is the cause of lowering T _c of the system.     

Raman scattering studies of spin‐waves in hexagonal BaFe12O19

We present the results of polarized Raman spectroscopy of hexagonal BaFe₁₂O₁₉ single crystal. The spectra, recorded from 200 to 800 cm^–1 and 1100 to 1700 cm^–1 in the 20–250 K temperature range, are analyzed on the basis of both crystal vibrations and spin‐waves. In the low wavenumber range, the Γ‐point phonons are observed. In the high wavenumber range, phonon mixings are observed; more interestingly, four modes of spin‐waves are identified in hexagonal BaFe₁₂O₁₉. Both have not been studied previously. Our analyses of the spin‐waves provide an optical method for quantitatively estimating the spin exchange interactions in hexagonal BaFe₁₂O₁₉. The four strong exchange integrals are found to have the values of J_ce = 1.31 meV, J_ae = 1.36 meV, J_cd = 1.46 meV, and J_bd = 1.71 meV. Our results also indicate that at ~200 and ~80 K, there would be additional spin‐ordering transitions in hexagonal BaFe₁₂O₁₉. Copyright © 2012 John Wiley & Sons, Ltd.     

Dependence of the intrinsic line width of surface states on the wave vector: The Cu(111) and Ag(111) surfaces

The dependence of the intrinsic line width Γ of electron and hole states due to inelastic scattering on the wave vector k _∥ in the occupied surface state and the first image potential state on the Cu(111) and Ag(111) surfaces has been calculated using the GW approximation, which simulates the self-energy of the quasiparticles by the product of the Greens’s function and the dynamically screened Coulomb potential. Different contributions to the relaxation of electron and hole excitations have been analyzed. It has been demonstrated that, for both surfaces, the main channel of relaxation of holes in the occupied surface states is intraband scattering and that, for electrons in the image potential states, the interband transitions play a decisive role. A sharp decrease in the intrinsic line width of the hole state with an increase in k _∥ is caused by a decrease in the number of final states, whereas an increase in Γ of the image potential state is predominantly determined by an increase of its overlap with bulk states.     

Polar-center phase nuclei in He+-irradiated CuO single crystals

Irradiation of various single-crystal CuO faces [ac,bc,(110)] with 4.6-MeV He⁺ ions has been found to result in reduction of CuO to Cu₂O and Cu on the irradiated and unirradiated sides, lifting of forbiddenness from optical transitions in the [CuO₄]⁷⁻ electron center in the 0.7–0.95-eV energy range, a change in dichroism near the bands corresponding to transitions in the hole centers, [CuO₄]⁵⁻, and electron centers, [CuO₄]⁷⁻, as well as in a resonant increase of absorption at 0.95–1.30 eV with an unusual polarization dependence. The results of He⁺ irradiation of CuO single crystals are discussed in terms of a model of the nucleation of the phase of polar (electron and hole) centers in copper-oxygen systems. Fiz. Tverd. Tela (St. Petersburg) 40, 419–424 (March 1998)     

Near-IR laser inelastic electronic light scattering spectroscopy on transitions between ground and excited states of acceptor centers in GaAs and InP crystals

We report the development of a method for recording the low-temperature (T=6 K) near-IR inelastic light scattering spectra and the observation of electronic scattering on the transitions 1s _3/2(Γ₈) → 2s _3/2(Γ₈) between the ground and excited states of different shallow acceptor centers in a n-type semi-insulating crystal si-GaAs (n=1.0 × 10⁸ cm⁻³) and in a doped p-InP crystal (p=3.6×10¹⁷ cm⁻³). Moreover, a new line, associated with the transition 1s _3/2(Γ ₈) → 2p _3/2(Γ₈) and due to a dielectric local mode, recorded for the first time in the spectra of narrow-gap semiconductors, was found in the residual-frequency band in the p-InP spectrum between TO(Γ) and LO (Γ) phonons. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 5, 334–339 (10 March 1998)     

A first experimental approach to the 15O + α elastic scattering

The ¹⁵O(α,α)¹⁵O elastic scattering is investigated using a ¹⁵O radioactive beam and a He gas cell limited by Mylar windows. The width of a ¹⁹Ne state at an excitation energy of 5.35MeV is measured as Γ_α = 3.2±1.6keV, in agreement with charge symmetry estimate.     

Studies of synthesizing behaviors and superconductivity of sol-gel YBa2Cu3O7-x samples in flowing oxygen atmosphere

Systematic studies of synthesizing behaviors of sol-gel YBa₂Cu₃O_7−x samples in flowing oxygen atmosphere and their superconductivity have been performed. A set of high temperature ρ-T curves has been obtained for the whole synthesizing process. After four rounds of synthesizing, the resistivity of the sample was around ρ=1.00×10⁻³Ω · cm at room temperature. The ρ-T curve of the fourth round shows that the orthorhombic to tetragonal phase transformation of the sample occurs around 600 °C, which is lower than that of the YBa₂Cu₃O_7−x sample prepared by conventional solid-state reaction method. Other measurements, such as X-ray diffraction, SEM measurement and low temperature R-T and M-T measurement, were also performed. And the R-T and M-T measurement results suggest that during the synthesizing process, there exist some state at which the sample has better superconductivity than the other states. Moreover, we found screw dislocations presenting on the sample broken surface from the SEM images. This will change the concept that the screw dislocations can only grow on the surface of the YBCO thin films and single crystals.