Magnetoresistive properties of cold-pressed CrO<Subscript>2</Subscript> powder,prepared by hydrothermal synthesis

The resistive, magnetoresistive and magnetic properties of cold-pressed CrO₂, powder prepared by hydrothermal synthesis from chromic anhydride have been studied. The powder particles (with a mean diameter of about 120 nm) were nearly spherical. The particles stabilized with a β-CrOOH surface layer. The powder compact (with a Curie temperature of about 385 K) revealed nonmetallic temperature behavior of the resistance (with an R(T) dependence close to exponential at T < 20 K). A giant negative magnetoresistance (MR) (∼20% at T ≈ 5K) is found. MR decreased rapidly with an increase in temperature (to 0.3% at T > 200 K). Such MR behavior is shown to be typical of a system of magnetic grains with magnetic (spin-dependent) tunneling.     

Influence of impurities on the low-temperature deformation of nanocrystalline copper

The influence of ZrO₂ particles on the low-temperature deformation of nanocrystalline copper produced by strong plastic deformation is investigated using equichannel angular pressing. A comparison is made between the deformation characteristics in tension and compression in the temperature range 4.2–400 K, measured for copper and the composite Cu:0.3 vol. % ZrO₂. It is shown that within 4.2–200 K the yield point σ _sm of the composite is higher than that for copper, attaining 680 MPa at 4.2 K, then the yield points are close in value up to room temperature, and diverge again as the temperature is raised. Possible causes of the dissimilar influence of an impurity on the strength and plasticity characteristics of nanocrystalline copper in various temperature intervals are discussed. Fiz. Tverd. Tela (St. Petersburg) 40, 1639–1641 (September 1998)     

Comment on magnetism and superconductivity in rutheno cuprates: RuSr2GdCu2O8 and RuSr2Gd1.5Ce0.5Cu2O10

Both RuSr₂GdCu₂O_8-δ (Ru-1212) and RuSr₂Gd_1.5Ce_0.5Cu₂O_10-δ (Ru-1222) exhibits magnetism and superconductivity, as seen by magnetization vs. temperature behavior measured in 5 Oe field. Zero-field-cooled (ZFC) and field-cooled (FC) magnetization data show branching at around 140 K and 100 K with a cusp at 135 K and 80 K and a diamagnetic transition around 20 K and 30 K in the ZFC part, for Ru-1212 and Ru-1222, respectively. The isothermal magnetization possesses a non-linear contribution due to a ferromagnetic component at low temperatures below 50 K for both samples. The resistance vs. temperature behavior of the samples in applied fields of 0, 3 and 7 T confirmed superconductivity, with a different type of broadening of the superconductivity transition under magnetic fields for Ru-1212 from that known for conventional high-T _c superconductors. The magnetoresistance (MR) is negative above the Ru magnetic ordering temperature at 135 K. Below the Ru magnetic ordering temperature, MR displays a positive peak at low fields and becomes negative at higher fields for Ru-1212. For Ru-1222, MR remains negative both above and below the ordering temperature. A maximum of 2% is observed for the negative MR value at the Ru magnetic ordering temperature. An electron diffraction pattern obtained for the Ru-1212 sample shows two types of superstructure: one has a weak spot at the centre of the a–b rectangle, and the other only along the b direction. Interestingly, Ru-1222 shows only clean a–b and a–c planes, without any superstructures.     

Magnetotransport properties of a layered La1.6Ca1.4Mn2O7 polycrystal

Magnetotransport properties of a two-layered La_1.6Ca_1.4Mn₂O₇ polycrystal have been examined as a function of temperature and applied field. It was found that the magnetic transition temperature (T_c) is about 70 K higher than the insulator–metal transition temperature (T_p). Two peaks were observed on both the temperature dependence of the imaginary part of the ac magnetic susceptibility χ^′′(T ) and that of the magnetoresistance MR(T). One is slightly below T_p∼107 K and the other is near T_c∼170 K. Below 70 K, the MR ratio increases with decreasing temperature. Around and above T_p but below T_c, the magnetization shows some indication of saturation, whereas the MR ratio shows no indication of saturation. The magnetotransport properties can be explained by considering the anisotropy exchange interactions along the a–b plane and the c direction, and the low-temperature MR can be attributed to the effects of the nearly fully spin-polarized carriers’ tunneling through the insulating (La,Ca)₂O₂ layers between the adjacent MnO₂ bilayers. Received: 18 September 2000 / Accepted: 20 February 2001 / Published online: 26 April 2001     

Persistent spin splitting of a two-dimensional electron gas in tilted magnetic fields

The effect of atomic disorder on the electron transport and the magnetoresistance (MR) of Co₂CrAl Heusler alloy (HA) films has been investigated. We show that Co₂CrAl films with L2₁ order exhibit a negative value for the temperature coefficient of resistivity (TCR) in a temperature range of 10 < T < 290 K, and the temperature dependence of electric conductivity varies as T ^3/2 similarly to that of the zero-gap semiconductors. The atomic or the site disorder on the way of L2₁ → B2 → A2 → amorphous state in Co₂CrAl HA films causes the deviation from this dependence: reduction in the absolute value of TCR as well as decrease in the resistivity down to ϱ(T = 293 K) ∼ 200 μΩ cm in comparison to ϱ(T = 293 K) ∼ 230 μΩ cm typical for the Co₂CrAl films with L2₁ order. The magnetic-field dependence of MR of the Co₂CrAl films with L2₁ order is determined by two competing contributions: a positive Lorentz scattering and a negative s-d scattering. The atomic disorder in Co₂CrAl films drastically changes MR behavior due to its strong influence on the magnetic properties.     

Magnetoresistance of HgSeS crystals at hydrostatic pressures of up to 1 GPa

Magnetoresistance (MR) of HgSe_1−x S_x crystals has been studied in the temperature range 4.2–300 K and in magnetic fields up to 12 T under hydrostatic pressures P exceeding the threshold P _t for the structural phase transition. Shubnikov-de Haas quantum oscillations in longitudinal and transverse MR were observed to occur in the original samples at T=4.2 K. For P>P _t, HgSeS crystals transferred to metastable states, which presumably incorporate the high-and low-pressure phases, and in which the oscillations vanished. At the same time the monotonic behavior of MR with magnetic field B, as well as the temperature dependences of resistivity ρ retained the shape characteristic of the original phases. The observed weakening of the dependences of ρ on B and T is attributed to an increase of the temperature independent contribution to ρ caused by phase inclusions and structural defects in the metastable states. It is the corresponding decrease of electron mobility that suppresses the oscillations. Fiz. Tverd. Tela (St. Petersburg) 39, 1717–1722 (October 1997)     

Low-temperature electrical conductivity and the superconductor-insulator transition induced by indium impurity states in (Pb0.5Sn0.5)1 ? xInxTe solid solutions

A study is reported of the low-temperature electrophysical (including superconducting) characteristics of the (Pb_0.5Sn_0.5)_{1 − x} In _x Te semiconducting solid solutions with an indium content variable within x = 0.05–0.20. A decrease in the impurity content x in the material has been found to bring about a decrease in the superconducting transition temperature T _c and the onset of an “insulating” state of the material. These effects manifest themselves in an increase in the low-temperature (T = 4.2 K) resistivity of (Pb_0.5Sn_0.5)_0.95In_0.05Te by more than three orders of magnitude as compared to that of (Pb_0.5Sn_0.5)_0.8In_0.2Te. A decrease in the In content in the solid solution also gives rise to a radical change in the shape of the temperature dependence of the electrical resistivity from a metallic behavior in the material with x = 0.20 (decrease in the electrical resistivity with decreasing temperature in the range 300–4.2 K) to a semiconducting behavior in a sample with x = 0.05 (exponential increase in the resistivity at T < 25 K). This transition to the insulating state with decreasing content of the impurity should be assigned to the displacement of the impurity band of quasi-local indium states toward the top of the light-hole valence band of the material and its emergence into the band gap of the solid solution.     

Giant enhancement of magnetocaloric effect in metallic glass matrix composite

The magnetocaloric effect (MCE) has made great success in very low temperature refrigeration, which is highly desirable for application to the extended higher temperature range. Here we report the giant enhancement of MCE in the metallic glass composite. The large magnetic refrigerant capacity (RC) up to 103 J·kg⁻¹ is more than double the RC of the well-known crystalline magnetic refrigerant compound Gd₅Si₂Ge_1.9Fe_0.1 (357 J·kg⁻¹) and MnFeP_0.45As_0.55 (390 J·kg⁻¹)(containing either exorbitant-cost Ge or poisonous As). The full width at half maximum of the magnetic entropy change (ΔS _m) peak almost spreads over the whole low-temperature range (from 303 to 30 K), which is five times wider than that of the Gd₅Si₂Ge_1.9Fe_0.1 and pure Gd. The maximum ΔSm approaches a nearly constant value in a wide temperature span over 100 K, and however, such a broad table-like region near room temperature has seldom been found in alloys and compounds. In combination with the intrinsic amorphous nature, the metallic glass composite may be potential for the ideal Ericsson-cycle magnetic refrigeration over a broad temperature range near room temperature. Supported by the National Natural Science Foundation of China (grant Nos. 50621061 and 50731008) and the National Basic Research Program of China (973 Program) (Grant No. 2007CB613904)     

FM-AFM crossover in vanadium oxide nanomaterials

The magnetic properties of nanomaterials based on vanadium oxide (multiwall nanotubes, nanorods, and nanolayers) have been investigated in the temperature range of 1.8–220 K by high-frequency (60-GHz) EPR. A transition from a ferromagnetic temperature dependence to an antiferromagnetic temperature dependence has been observed in nanorods and nanotubes with a decrease in the temperature. The FM-AFM crossover observed near T _C ∼ 110 K is accompanied by a low-temperature increase in the Curie constant by a factor of 2.7–7. The comparison of the experimental data for various VO _x nanoparticles indicates that the most probable cause of the change in the type of magnetic interaction is a change in the concentration of V⁴⁺ magnetic ions.     

Effects of Fe and Co addition on the magnetoresistance in Ni-Mn-Ga films

Effects of Fe and Co addition on the magnetoresistance MR were investigated in sputtered Ni-Mn-Ga-M (M = Fe, Co) films. With increasing M content, magnetization σ enhanced for M = Fe, while it reduced for M = Co. At 300 K, absolute MR value at 1.5 T |MR|_1.5 was about 1%. The value of |MR|_1.5 was found to be decreased with increasing M = Fe content. In the case of M = Co, |MR|_1.5 increased with M content. |MR|_1.5 of the film containing Co 1.6 at.% showed a maximum value of 2.5% at 355 K in the vicinity of the Curie temperature T_C. An origin of MR behavior in the present films was suggested to be explained by a s-d scattering model.     

Electrical properties of amorphous (Co45Fe45Zr10)x(Al2O3)1?x nanocomposites

The electrical properties of (Co₄₅Fe₄₅Zr₁₀)_x(Al₂O₃)_1−x granular nanocomposites have been studied. The concentration dependences of electrical resistivity are S-shaped (in accordance with the percolation theory of conduction) with a threshold at a metallic component concentration of ∼41 at. %. An analysis of the temperature behavior carried out in the range 300–973 K revealed that structural relaxation and crystallization of the amorphous phase are accompanied by a decrease in the electrical resistivity of the composites above the percolation threshold and by its increase below the percolation threshold. For metallic phase concentrations x<41 at. %, variable range hopping conduction over localized states near the Fermi level was found to be dominant at low temperatures (77–180 K). A further increase in temperature brings about a crossover of the conduction mechanism from Mott’s law ln(σ) ∝ (1/T)^1/4 to ln(σ) ∝ (1/T)^1/2. A model of inelastic resonance tunneling over a chain of localized states of the dielectric matrix was used to find the average number of localized states involved in the charge transport between metallic grains. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 11, 2004, pp. 2076–2082. Original Russian Text Copyright ? 2004 by Kalinin, Remizov, Sitnikov.     

Thermal conductivity of (VO)2P2O7 single crystals

Thermal conductivity ϰ of single-crystal (VO)₂P₂O₇ has been studied within the 4–300 K range. A break was found in the ϰ(T) relation about 200 K, in the region of the transition from diffuse antiferromagnetic ordering (200–4 K) to a classical paramagnet (T=200–300 K). In the low-temperature domain (4–200 K), one may expect an additional contribution to ϰ(T) from the magnon component of thermal conductivity. Fiz. Tverd. Tela (St. Petersburg) 40, 2093–2094 (November 1998)     

The effect of temperature and pressure on the heat conductivity of TlSbC<Stack><Subscript>2</Subscript><Superscript>VI</Superscript></Stack> (<Emphasis Type="Italic">C</Emphasis><Superscript>VI</Superscript> → S,Se, Te)

The effect of temperature and pressure on heat conductivity of ternary compounds TiSbC ₂^VI (C ^VI → S, Se, Te) in the solid and liquid states in a temperature range of 300–800 K, as well as under the pressure up to 0.35 GPa in a temperature range of 275–450 K, is studied. The dependence of heat conductivity on average atomic weight under the S → Se → Te transition is found. Analysis of the experimental data makes it possible to attribute TlSbS₂ to the class of substances exhibiting semiconductor-semiconductor melting behavior.     

Electrical transport, magnetism, and magnetoresistance in La0.7Sr0.3(Mn1-xCox)O3

The crystal structure (rhombohedral) is not changed on the replacement of Mn by Co. The lattice parameters a and c decrease with the increasing Co concentration. In this paper we have systematically investigated the effect of Co doping on the Mn site in the La_0.7Sr_0.3MnO₃ and find that Co substitution leads to a drastic suppression of ferromagnetic long-range order and metallic state. However, we observed substantial enhancement of MR ratio over the entire temperature studied for x=0.1 and a large increase of one at the low temperature for the compositions of x=0.2 and 0.3. The largest MR ratio as high as ≈78% is observed at 15 K in x=0.2 and 0.3. As x is further increased toward 1, conduction and ferromagnetism strongly recover but the MR ratio decreases obviously. The end member with x=1.0 has metallic and cluster spin-glass ferromagnetic behavior (T<T_C) and a smaller value of MR (≈2–8%) in T<300 K with a maximum MR ratio of 8% at around T_C (=238 K). Received: 11 September 1998 / Accepted: 19 November 1998 / Published online: 17 March 1999     

Electrical transport in La1−x Ca x MnO3 thin films at low temperatures

We report here the low-temperature resistivity of the chemical solution deposited La_1−x Ca _x MnO₃ (x=0.2, 0.3 and 0.33) thin films on LaAlO₃ substrates. The films were post-annealed in atmosphere at 850°C. The low temperature resistivity data has been studied in order to understand the nature of low-temperature conduction processes. The data showed T ² dependence from 60 K to 120 K consistent with the single magnon scattering process. The deviation from this quadratic temperature dependence at low temperatures is attributed to the collapse of the minority spin band. The two-magnon and electron-phonon processes contribute to scattering of carriers in the temperature range above 120 K.     

Magnetotransport properties of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> with different grain sizes

The magnetotransport and magnetoresistive (MR) properties of manganese-based La_0.67Ca_0.33MnO₃ perovskite with different grain sizes are reported. The electrical resistivity was measured as a function of temperature in magnetic fields of 0.5 and 1 T. The insulator–metal transition temperature, T _IM, shifted to a higher temperature with the application of the magnetic field. In zero field, T _IM is almost constant (∼271 K) for all samples except for the sample with the largest grain size, where T _IM=265 K. The temperature dependence of resistivity was fitted with several equations in the metallic (ferromagnetic) region and the insulating (paramagnetic) region. The density of states at the Fermi level, N(E _F), and the activation energy of electron hopping were estimated by fitting the resistivity versus temperature curves. The ρ–T ² curves are nearly linear in the metallic regime, but the ρ–T ^2.5 curves exhibit a deviation from linearity. The variable range hopping model and small polaron hopping model fit the data well in the high-temperature region, indicating the existence of the Jahn–Teller distortion that localizes the charge carriers. MR was found to increase with an increase in the magnetic field, an effect which is attributed to the intergrain spin tunneling effect.     

Critical evolution of the local order parameters related to the nanopolar domains in Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> ceramics

In the present paper, Pb(Mg_1/3Nb_2/3)O₃ (PMN) ceramics prepared by the columbite method were investigated. The dielectric study indicates typical relaxor properties, with a frequency dispersion in the range of 200–350 K. The relaxor-to-paraelectric phase transition was evidenced by the continuous decrease of the local order parameter derived from the permittivity-temperature data. As a result of the critical behavior, the main Raman modes show anomalies at: (i) ∼150 K; (ii) ∼220 K (i.e. close to the critical temperature reported for the field-induced ferroelectric state in PMN single crystal); (iii) ∼260 K (i.e. the temperature of the permittivity maximum); (iv) ∼350 K (the temperature for initiation of the cluster freezing process T ^*); (v) ∼620 K (Burns temperature). The frequency split of the doublet at ∼605 and ∼500 cm⁻¹ presents a critical behavior related to the local symmetry lowering and to the structure ordering due to a phase transformation which takes place below T ^*. The tunability in the paraelectric state was interpreted in terms of reorientation of the non-interacting nanopolar clusters in a double-well potential. The temperature dependence of the nanopolar domain size also shows anomalies in the range of T ^*. The size and dynamics of the polar nanodomains is essential in determining the functional properties of the Pb(Mg_1/3Nb_2/3)O₃ relaxor.     

Electrical conductivity and magnetic properties of La1 ? xCaxMn1 ? yFeyO3 ceramic samples (x = 0.67, y = 0, 0.05)

The temperature dependences of the magnetic susceptibility χ(T) and the electrical resistivity ρ(T) of ceramic samples of La_{1 − x} Ca _x MnO₃ with x = 0.67 (LCMO) and La_{1 − x} Ca _x Mn_{1 − y} Fe _y O₃ with x = 0.67 and y = 0.05 (LCMFO) are investigated in magnetic fields B = 50–10⁵ G and the temperature range T = 4.2–400 K. Both samples undergo a transition from the paramagnetic state to a state with charge (orbital) ordering (CO) at temperatures T _CO ≈ 272 K for LCMO and T _CO ≈ 222 K for LCMFO. The behavior of the paramagnetic phase in the temperature range 320–400 K for LCMO and 260–400 K for LCMFO is described by the Curie-Weiss law with effective Bohr magneton numbers p _eff = 4.83 μ_B (LCMO) and 4.77 μ_B (LCMFO), respectively. The disagreement between the observed positive Weiss temperatures (θ ≈ 175 K (LCMO) and θ ≈ 134 K (LCMFO)) and negative Weiss temperatures required for the antiferromagnetic ground state can be explained by the phase separation and transition to the charge-ordered state. The magnetic irreversibility for T < T _CO is accounted for by the existence of a mixture of the ferromagnetic and antiferromagnetic phases, as well as the cluster glass phase. At low temperatures, doping with iron enhances the frustration of the system, which manifests itself in a more regular behavior of the decay rate of the remanent magnetization with time. The temperature dependence of the electrical resistivity in the range of the charge-ordered phase conforms to the variable-range hopping model. The behavior of the electrical resistivity is governed by the complex structure of the density of localized states near the Fermi level, which includes a soft Coulomb gap Δ = 0.464 eV for LCMO and 0.446 eV for LCMFO. It is established that the ratio between the localization radii of charge carriers a for LCMFO and a _und for LCMO is a/a _und = 0.88. Original Russian Text ? V.S. Zakhvalinskiĭ, R. Laiho, T.S. Orlova, A.V. Khokhulin, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 1, pp. 61–68.     

Increased cubic–tetragonal phase transition temperature and resistivity hysteresis of surface vacuum annealed SrTiO3

Electrical properties of SrTiO₃ single crystal samples treated by an anisotropic surface annealing technique under reducing conditions have been investigated in the temperature range of 35 K–300 K. Optical and atomic force microscopy show that annealing gives rise to polycrystallization and the formation of colored dendritic structures. Carrier concentrations and mobilities determined by Hall measurements as well as resistivities detected by van der Pauw measurements show the expected metallic behavior due to oxygen vacancy doping. Moreover, the temperature dependent resistivities indicate a cubic-to-tetragonal phase transition, which to our knowledge has not been reported before. Additionally, the transition occurred up to 53 K above the known bulk transition temperature T _C at 105 K with a hysteresis up to a temperature of 220 K. Both phenomena possibly arise from dislocations and associated strain fields introduced by surface annealing that are assumed to lower the free energy of the tetragonal phase and simultaneously pin tetragonal domains. Thus, microregions of the tetragonal phase persist above T _C causing the hysteresis in resistivity up to ∼12%. This effect possibly provides new chances for future oxide based non-volatile data-storage devices.     

Study of the phase composition of AgI microcrystals by exciton spectroscopy and differential scanning calorimetry

Differential absorption spectra of RbAg₄I₅ have been measured in the exciton absorption region of AgI within the temperature range 27–250 °C. In the same temperature range, the temperature behavior of the heat capacity of RbAg₄I₅, Rb₂AgI₃, and KAg₄I₅ have been obtained by differential scanning calorimetry. An analysis of the results suggests that, in AgI microcrystals less than r _cr in size, the upper boundary for stability of the low-temperature β modification is higher by several tens of degrees. Fiz. Tverd. Tela (St. Petersburg) 40, 852–854 (May 1998)