Electronic band gap and transport in graphene superlattice with a Gaussian profile potential voltage

We study the electronic properties for the graphene-based one-dimensional superlattices, whose potential voltages vary according to the envelope of a Gaussian function. It is found that an unusual Dirac point exists and its location is exactly associated with a zero-averaged wave number （zero-re） gap. This zero-k gap is less sensitive to incident angle and lattice constants, properties opposing those of Bragg gap. The defect mode appearing inside the zero-l gap has an effect on transmission, conductance, and shot noise, which will be useful for further investigation.     

Shot noise in magnetic field modulated graphene superlattice

We investigate the shot noise properties in a monolayer graphene superlattice modulated by N parallel ferromagnets deposited on a dielectric layer. It is found that for the antiparallel magnetization configuration or when magnetic field is zero the new Dirac-like point appears in graphene superlattice. The transport is almost forbidden at this new Dirac-like point, and the Fano factor reaches its maximum value 1/3. In the parallel magnetization configuration as the number of magnetic barriers increases, the shot noise increases. In this case, the transmission can be blocked by the magnetic–electric barrier and the Fano factor approaches 1, which is dramatically distinguishable from that in antiparallel alignment. The results may be helpful to control the electron transport in graphene-based electronic devices.     

Omnidirectional transmission and reflection of pseudospin-1 Dirac fermions in a Lieb superlattice

We study the behavior of pseudospin-1 Dirac fermions in a Lieb lattice subjected to an external periodic potential. It is found that there exists a zero-averaged wave-number passband at the incident energy corresponding to half of the potential step, in contrast to zero-averaged wave-number gap in graphene superlattices. By tuning the sublattice site-energy, the passband can be turned into an omnidirectional gap. Consequently, a transformation from omnidirectional transmission to reflection, accompanied with a switch of conductance from maximum to zero can be realized easily. It is expected that the controllable properties are useful for some applications in optical or electronic devices.     

Tunable electronic transmission gaps in a graphene superlattice

The transmission in graphene superlattices with adjustable barrier height is investigated using transfer-matrix method. It is found that one could control the angular range of transmission by changing the ratio of incidence energy and barrier height. The transmission as a function of incidence energy has more than one gaps, due to the appearance of evanescent waves in different barriers. Accordingly, more than one conductivity minimums are induced. The transmission gaps could be controlled by adjusting the incidence angle, the barrier height, and the barrier number, which gives the possibility to construct an energy-dependent wavevector filter.     

Dynamic chaotization of the electronic subsystem in graphene superlattice

d'Alembert equation written for the electromagnetic waves propagating in the graphene superlattice is discussed. The chaotic behavior of the electrons in graphene superlattice is studied by the Melnikov method. Dynamic chaos of electron in graphene superlattice is shown to appear for certain intervals of amplitudes of preset alternate current. The frequency dependence of the critical amplitude of alternate current above which would be a chaos is investigated.     

拉伸作用对单层石墨片电子能隙的影响

基于紧束缚方法,在考虑最近邻相互作用的情况下,研究了拉伸锯齿型边和扶手型边单层石墨的能带结构,得到了两种类型单层石墨片的π电子能带及带隙与拉力的解析关系式.通过数值计算能够发现：拉力不但使单层石墨产生带隙,而且带隙随着拉力的增大而变宽,并且锯齿型比扶手型的带隙更易变宽. 关键词： 单层石墨片 拉伸形变 电子能隙     

Properties of omnidirectional photonic band gap in one-dimensional staggered plasma photonic crystals

In this paper, the properties of the omnidirectional photonic band gap (OBG) realized by one-dimensional (1D) photonic crystals (PCs) with a staggered structure which is composed of plasma and isotropic dielectric layer have been theoretically studied by the transfer matrix method (TMM). From the numerical results, it has been shown that such OBG is insensitive to the incident angle and the polarization of electromagnetic wave (EM wave), and the frequency range and central frequency of OBG can be effectively controlled by adjusting the plasma frequency, the average thickness of plasma layer, the average thickness of dielectric layer and staggered parameters, respectively. The frequency range of OBG can be notably enlarged with increasing the plasma frequency, average thickness of plasma layer, respectively. Moreover, the bandwidth of OBG can be narrowed with increasing the average thickness of dielectric layer. Changing staggered parameters of dielectric and plasma layer means that the OBG can be tuned. It is shown that 1D plasma dielectric photonic crystals (PPCs) with such staggered structure have a superior feature in the enhancement of frequency range of OBG compared with the conventional 1D binary PPCs. This kind of OBG has potential applications in filters, microcavities, and fibers, etc.     

Magnon energy gap in a four-layer ferromagnetic superlattice

The magnon energy band in a four-layer ferromagnetic superlattice is studied by using the linear spin-wave approach and Green＇s function technique. It is found that three modulated energy gaps exist in the magnon energy band along Kx direction perpendicular to the superlattice plane. The spin quantum numbers and the interlayer exchange couplings all affect the three energy gaps. The magnon energy gaps of the four-layer ferromagnetic superlattice are different from those of the three-layer one. For the four-layer ferromagnetic superlattice, the disappearance of the magnon energy gaps △ω12, △ω23 and △ω34 all correlates with the symmetry of this system. The zero energy gap △ω23 correlates with the symmetry of interlayer exchange couplings, while the vanishing of the magnon energy gaps △ω12 and △ω34 corresponds to a translational symmetry of x-direction in the lattice. When the parameters of the system deviate from these symmetries, the three energy gaps will increase.     

Band gap opening and optical absorption enhancement in graphene using ZnO nanocluster

Electronic, optical and transport properties of the graphene/ZnO heterostructure have been explored using first-principles density functional theory. The results show that Zn₁₂O₁₂ can open a band gap of 14.5 meV in graphene, increase its optical absorption by 1.67 times covering the visible spectrum which extends to the infra-red (IR) range, and exhibits a slight non-linear I–V characteristic depending on the applied bias. These findings envisage that a graphene/Zn₁₂O₁₂ heterostructure can be appropriate for energy harvesting, photodetection, and photochemical devices.     

Gap solitons in parity time complex superlattice with dual periods

A theory is presented to investigate the existence and propagation stability of gap solitons in a parity-time （PT） com- plex superlattice with dual periods. In this superlattice, the real and imaginary parts are both in the form of superlattices with dual periods. In the self-focusing nonlinearity, PT solitons can exist in the semi-infinite gap. However, only those gap solitons with low powers can propagate stably, whereas the high-power solitons present periodic oscillation and simultane- ously suffer energy decay. In the self-defocusing nonlinearity, PT solitons only exist in the first gap and all these solitons are stable.     

Modification of the structural and electronic properties of graphene by the benzene molecule adsorption

A survey of the literature data on the adsorption of benzene on graphene or carbon nanotubes indicates that the distance between the graphene sheet and benzene molecule is determined from weak van der Waals forces (∼3.40 Å). In our theoretical study, it was found that the benzene/graphene structure (in a specific configuration with carbon atoms located at the atop positions, stacked directly on the top of each other) forms strong covalent bonds, if the distance between the graphene and benzene is about 1.60 Å. Such a short distance corresponds to about a half of the usual separation between the graphite layers. It was also shown that at such a short distance the carbon atoms of the benzene molecule move towards the graphene sheet, whereas the hydrogen atoms move in a different direction, thus breaking the benzene planar structure.     

Transport properties in a line defect superlattice of graphene

It was recently reported that a kind of graphene line defect can be fabricated in a controllable experimental way. In the present work we theoretically investigate the band structure and the electronic transport properties of a graphene superlattice formed by embedding periodically line defects in the graphene lattice. Based on the calculated results, we suggest that such a superlattice can be used as a quantum wire array which can carry much larger current than a single graphene nanoribbon. A remarkable advantage of this superlattice over other quantum wires is that the electronic transport in it is insensitive to scattering effects except that the scattering potential range is smaller than the graphene lattice constant. Moreover, we find that the anisotropy of the Dirac cone presented in this superlattice has a nontrivial influence on the universal minimal conductivity and the sub-Poissonian shot noise of graphene.     

Resonant states in heterostructures of graphene nanoribbons

We study the transport properties of heterostructures of armchair graphene nanoribbons (AGNR) forming a double symmetrical barrier configuration. The systems are described by a single-band tight-binding Hamiltonian and Green's functions formalism, based on real-space renormalization techniques. We present results for the quantum conductance and the current for distinct configurations, focusing our analysis on the dependence of the transport with geometrical effects such as separation, width and transverse dimension of the barriers. Our results show the apparition of a series of resonant peaks in the conductance, showing a clear evidence of the presence of resonant states in the conductor. Changes in the barrier dimensions allow the modulation of the resonances in the conductance, making possible to obtain a complete suppression of electron transmission for determined values of the Fermi energy. The current–voltage curves show the presence of a negative differential resistance effect with a threshold voltage that can be controlled by varying the separation between the barriers and by modulating its confinement potential.     

Correlations between electronic energy bands spin splitting and magnetic profile symmetry of magnetic superlattice

We have theoretically investigated the energy band structures of two typical magnetic superlattices formed by perpendicular or parallel magnetization ferromagnetic stripes periodically deposited on a two-dimensional electron gas (2DEG), where the magnetic profile in the perpendicular magnetization is of inversion anti-symmetry, but of inversion symmetry in parallel magnetization, respectively. We have shown that the energy bands of perpendicular magnetization display the spin-splitting and transverse wave-vector symmetry, while the energy bands of the parallel magnetization exhibit spin degeneration and transverse wave-vector asymmetry. These distinguishing spin-dependent and transverse wave-vector asymmetry features are essential for future spintronics devices applications.     

Fe/Cr超晶格电子结构和磁性质的理论研究(英文)

应用密度泛函全势线性缀加平面波方法研究了Fe3/Cr3超晶格的电子结构和磁性质.结果表明,这种体系的基态相邻铁原子层间存在铁磁耦合,内禀自旋波波长大约2层厚的长度.     

Enlargement of the band gap in the metal-insulator-metal heterowaveguide

We present a new metal-insulator-metal (MIM) heterowaveguide to enlarge the band gap, which is formed by alternately stacking two kinds of metals, modulating the MIM waveguide slit, and inserting different dielectric materials with the effective refractive index periodically modulated. Based on this structure, we adopt two different methods to enlarge the band gap: changing the thickness of the unit layer and combining two MIM structures. Both of them widen the band gap when surface plasmon polaritons propagate through the structure. This metal heterostructure is expected to have applications in surface plasmon polaritons (SPPs) based optical devices, such as filters, waveguides, especially for broad band gap elements.     

Enlargement of the omnidirectional photonic band gap by one-dimensional plasma-dielectric photonic crystals with fractal structure

In this paper, an omnidirectional photonic band gap (OBG) which originates from Bragg gap compared to $\text{ zero- }\overline{n}$ zero- n ¯ gap or single negative (negative permittivity or negative permeability) gap, realized by one-dimensional plasma-dielectric photonic crystals with fractal structure (Thue–Mores aperiodic structure), which is composed of plasma and one kind of homogeneous, isotropic dielectric is theoretically studied by the transfer matrix method in detail. Such OBG is insensitive to the incident angle and the polarization of electromagnetic wave. From the numerical results, the bandwidth and central frequency of OBG can be notably enlarged by tuning the thickness of plasma and dielectric layers but cease to change with increasing the Thue–Mores order. The OBG also can be manipulated by the plasma density. Moreover, the plasma collision frequency has no effect on the bandwidth of OBG.     

Effect of interdiffusion on electronic states in one-layer quantum ring superlattice

The effect of interdiffusion on band structure and Bloch amplitudes of two dimensional superlattice composed of initially cylindrical quantum rings is investigated in the framework of adiabatic approach and using transformation to in-plane momentum space. It is shown that the adiabatic approximation is applicable even if the ring’s height is equal to its radius, because of weak localization of electron in the superlattice plane comparing with the localization in perpendicular direction. The consideration of the dependence of effective mass on spatial coordinate and time leads to the energy correction up to 10 meV. It is shown that energy minibands rise and become wider due to interdiffusion and the dependence of Bloch amplitudes on quasimomentum direction is more pronounced in the case of diffused potential profile.     

Spatial variation in the electronic structures of carpetlike graphene nanoribbons and sheets

Graphene, when deposited on a supporting substrate with a step edge, may be deformed in the presence of the step edges of the substrate. In this study, we have investigated a spatial variation in the local electronic structure near the step region, by performing first-principles calculations for carpetlike armchair graphene nanoribbons (C-AGNR) and two-dimensional periodic carpetlike graphene sheets (PCGS). Our results indicate no practical difference in the local density of states (LDOS) between those of flat and step regions. Interestingly, however, the PCGS shows a remarkable variation in the LDOS with an external electric field (E-field). Furthermore, we also discuss the dependence of the direction and the magnitude of the applied E-field on the spatial variation in the LDOS.     

First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice

When the GaAs/AlGaAs superlattice-based devices are used under irradiation environments, point defects may be created and ultimately deteriorate their electronic and transport properties. Thus, understanding the properties of point defects like vacancies and interstitials is essential for the successful application of semiconductor materials. In the present study, first-principles calculations are carried out to explore the stability of point defects in GaAs/Al_0.5Ga_0.5As superlattice and their effects on electronic properties. The results show that the interstitial defects and Frenkel pair defects are relatively difficult to form, while the antisite defects are favorably created generally. Besides, the existence of point defects generally modifies the electronic structure of GaAs/Al_0.5Ga_0.5As superlattice significantly, and most of the defective SL structures possess metallic characteristics. Considering the stability of point defects and carrier mobility of defective states, we propose an effective strategy that Al_As, Ga_As, and Al_Ga antisite defects are introduced to improve the hole or electron mobility of GaAs/Al_0.5Ga_0.5As superlattice. The obtained results will contribute to the understanding of the radiation damage effects of the GaAs/AlGaAs superlattice, and provide a guidance for designing highly stable and durable semiconductor superlattice-based electronics and optoelectronics for extreme environment applications.