Room temperature ferromagnetism in Cu–Gd co-doped GaN nanowires: A first-principles study

The electronic structure and room temperature ferromagnetism of wurtzite Cu–Gd co-doped GaN nanowires have been investigated by means of the first-principles calculations within the density functional theory, including the on-site Coulomb energy U. The magnetic coupling between Gd atoms in the Gd-doped GaN nanowire is paramagnetic instead of ferromagnetic (FM) as in the bulk structure. After replacing Ga with Cu atom we find a stable FM coupling between Gd magnetic moments in this p-type system. p–d coupling between Cu-3d and N-2p states pushes N-2p states up to Fermi level due to the existence of hole states introduced by Cu dopants. While the p–d coupling between host N-2p and Gd-5d states near Fermi level stabilizes a FM phase of Gd magnetic moments. Furthermore, we get a FM state above room temperature by increasing the holes concentration.     

Electronic structure and correlations of vitamin B<Subscript>12</Subscript> studied within the Haldane-Anderson impurity model

We study the electronic structure and correlations of vitamin B₁₂ (cyanocobalamine) by using theframework of the multi-orbital single-impurity Haldane-Anderson model of atransition-metal impurity in a semiconductor host. The parameters of the effectiveHaldane-Anderson model are obtained within the Hartree-Fock (HF) approximation. Thequantum Monte Carlo (QMC) technique is then used to calculate the one-electron andmagnetic correlation functions of this effective model. We observe that new states forminside the semiconductor gap found by HF due to the intra-orbital Coulomb interaction atthe impurity 3d orbitals. In particular, the lowest unoccupiedstates correspond to an impurity bound state, which consists of states from mainly the CNaxial ligand and the corrin ring as well as the Co e_g-like orbitals. We alsoobserve that the Co?(3d) orbitals can develop antiferromagneticcorrelations with the surrounding atoms depending on the filling of the impurity boundstates. In addition, we make comparisons of the HF+QMC data with the density functionaltheory calculations. We also discuss the photoabsorption spectrum of cyanocobalamine.     

Electronic structures,magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2

Utilizing first-principles calculations, the electronic structures, magnetic properties and band alignments of monolayer MoS₂ doped by 3d transition metal atoms have been investigated. It is found that in V, Cr, Mn, Fe-doped monolayers, the nearest neighboring S atoms (S_NN) are antiferromagnetically polarized with the doped atoms. While in Co, Ni, Cu, Zn-doped systems, the S_NN are ferromagnetically coupled with the doped atoms. Moreover, the nearest neighboring Mo atoms also demonstrate spin polarization. Compared with pristine monolayer MoS₂, little change is found for the band edges' positions in the doped systems. The Fermi level is located in the spin-polarized impurity bands, implying a half-metallic state. These results provide fundamental insights for doped monolayer MoS₂ applying in spintronic, optoelectronic and electronic devices.     

Origin of ferromagnetism via hole doping in SnO2: First-principles calculation

First-principles calculations are carried out in order to find the ferromagnetism dependence on the number of holes substituted for Sn sites. The results show that strong localization of defect states of the p bands of the oxygen atoms near the dopants favors high-spin states and local moment formation. These states appear to be ferromagnetically coupled with a rather long-range magnetic interaction, resulting in a half-metallic ferromagnetic ground state for the whole systems. Analysis of the total energies indicates that the induced well-confined ferromagnetism in the oxygen p orbitals due to hole doping is quite possible and easily controlled in these systems, which indicate a new way to develop a half-metallic ferromagnet in nonmagnetic d⁰ oxides.     

Ab initio studies on the electronic structure of CeSi5

We investigated the electronic properties of CeSi₅ by band structure calculation based on the density functional theory within LDA, LDA+U, and fully relativistic schemes. The calculated band structure scheme shows that the spin-orbit coupling splits the Ce 4f states into three manifolds. When the on-site Coulomb potential is added to the Ce-derived 4f orbitals, the degeneracy between the f orbitals would be lifted and they are split into lower Hubbard bands and upper Hubbard bands. It was found that quasiparticle mass enhancement inferred by comparing γ to the density of states (DOS) at the Fermi level indicates the effective mass of CeSi₅ is enhanced with the fully relativistic results.     

Electronic structure and spectra of CuO

We report the electronic structure of monoclinic CuO as obtained from first principles calculations utilizing density functional theory plus effective Coulomb interaction (DFT + U) method. In contrast to standard DFT calculations taking into account electronic correlations in DFT + U gave antiferromagnetic insulator with energy gap and magnetic moment values in good agreement with experimental data. The electronic states around the Fermi level are formed by partially filled Cu 3d _x²?y² orbitals with significant admixture of O 2p states. Theoretical spectra are calculated using DFT + U electronic structure method and their comparison with experimental photoemission and optical spectra show very good agreement.     

First-principles linear muffin-tin orbital investigations in the electronic and magnetic structures of double perovskites Ba2TMoO6 (T=V,Cr, Mn,Fe and Co)

The electronic and magnetic structures of ordered double perovskites Ba₂TMoO₆ (T=V, Cr, Mn, Fe and Co) are systematically investigated by means of the first-principle linear muffin-tin orbitals with the atomic-sphere approximation (LMTO-ASA) method. The calculations are performed by using the both local spin density approximation (LSDA) and the LSDA+U Coulomb interaction schemes. The results show a half-metallic ferrimagnetic ground states for T=Cr, Fe and Co in LSDA+U treatment, whereas half-metallic ferromagnetic character is observed for T=V. For T=Mn, insulating ground state is obtained, stabilized in the antiferromagnetic state. The LSDA+U calculations yield better agreement with the theoretical and the experimental results than do the LSDA.     

Investigation of possible half-metal material on double perovskites Sr2BBO6 (B,B=3d transition metal) using first-principle calculations

We investigated the possible candidates of half-metal (HM) material in double perovskites structure Sr₂BB′O₆ (B, B′=3d transition metal). The electronic structure calculations were based on density functional theory (DFT) with both generalized gradient approximation (GGA) and GGA+U approaches, where +U is on-site Coulomb interaction correction. With the consideration of 4 types of magnetic states, i.e. ferromagnetic (FM), ferromagnetic (FiM), antimagnetic (AF) and nonmagnetic (NM), we found 5 promising candidates for half-metallic (HM) materials: Sr₂ScCrO₆, Sr₂TiCrO₆, Sr₂MnCrO₆, Sr₂ZnMnO₆ and Sr₂ZnFeO₆.     

Theoretical study of magnetic ordering and electronic properties of AgxAl1−x N compounds

Ferromagnetic ordering of silver impurities in the AlN semiconductor is predicted by plane-wave ultrasoft pseudopotential and spin-polarized calculations based on density functional theory (DFT). It was found that an Ag impurity atom led to a ferromagnetic ground state in Ag_0.0625Al_0.9375N, with a net magnetic moment of 1.95 μ_B per supercell. The nitrogen neighbors at the basal plane in the AgN₄ tetrahedron are found to be the main contributors to the magnetization. This magnetic behavior is different from the ones previously reported on transition metal (TM) based dilute magnetic semiconductor (DMS), where the magnetic moment of the TM atom impurity is higher than those of the anions bonded to it. The calculated electronic structure band reveals that the Ag-doped AlN is p-type ferromagnetic semiconductor with a spin-polarized impurity band in the AlN band gap. In addition, the calculated density of states reveals that the ferromagnetic ground state originates from the strong hybridization between 4d-Ag and 2p-N states. This study shows that 4d transition metals such as silver may also be considered as candidates for ferromagnetic dopants in semiconductors.     

Features of Electronic Structure of Intermetallic Compounds CeNi<Subscript>4</Subscript>M (M = Fe,Co, Ni,Cu)

The evolution of the electronic structure of CeNi₄M (M = Fe, Co, Ni, Cu) intermetallics depending on the type of nickel substitutional impurity is explored. We have calculated band structures of these compounds and considered options of substituting one atom in nickel 3d sublattice in both types of crystallographic positions: 2c and 3g. The analysis of total energy self-consistent calculations has shown that positions of 2c type are more energetically advantageous for single iron and cobalt impurities, whereas a position of 3g type is better for a copper impurity. The Cu substitutional impurity does not change either the nonmagnetic state of ions or the total density at the Fermi level states. Fe and Co impurities, on the contrary, due to their considerable magnetic moments, induce magnetization of 3d states of nickel and cause significant changes in the electronic state density at the Fermi level.     

Magnetic and electronic structure studies of the perovskite oxide Nd2/3Sr1/3MnO3 from the first principle calculation

Generalized gradient approximation (GGA) and GGA + U (U denotes on-site Coulomb interactions) methods are applied to investigate the magnetic and electronic structures of the perovskite oxide Nd_2/3Sr_1/3MnO₃. Under GGA the compound prefers ferrimagnetic ordering in which Nd sublattice is spin-antiparallel to Mn sublattice. Nd 4f states cross over the Fermi level under GGA, leading the ferrimagnetic Nd_2/3Sr_1/3MnO₃ to a metallic character. The on-site Coulomb interactions should be included to emphasize the localized feature of Nd 4f states. Under GGA + U, the spins of Nd and Mn sublattices tend to be parallel in the ground state, and fully spin-polarized Mn 3d electrons yield a half-metallic band structure for the ferromagnetic Nd_2/3Sr_1/3MnO₃. The ferromagnetic coupling between Nd and Mn sublattices is ascribed to the super-exchange interaction between Nd 4f and Mn 3d (t2g) electrons via O 2p electrons.     

Magnetization of beryllium oxide in the presence of nonmagnetic impurities: Boron,carbon, and nitrogen

The electronic and magnetic states of a nonmagnetic insulator, namely, beryllium oxide, doped with nonmagnetic 2p elements (boron, carbon, and nitrogen) are studied using the density functional theory. The spin polarization of the 2p impurity states, as well as the transition of the doped BeO:(B,C,N) systems to the states of semiconducting or half-metallic magnets, is observed. The prospects for creating new magnetic materials by doping nonmagnetic insulators with nonmagnetic p impurities are discussed.     

The orbital characters and kz dispersions of bands in iron-pnictide NaFeAs

The electronic structure and orbital characters of iron-pnictide NaFeAs have been studied by polarization dependent angle-resolved photoemission spectroscopy. Some of the bands are mixed with the orbitals of opposite symmetries, which could be interpreted by the hybridization among the bands. According to the photon energy dependent experiment, the k_z dispersions of the bands that cross the Fermi energy are weak in both paramagnetic and spin density wave states. However, a band well below the Fermi level shows a k_z dispersion of 41 meV, which mainly contains the d_z² orbital.     

Spin interactions in a quantum ring containing a magnetic impurity

The exciton states in a CdTe semiconductor quantum ring containing a single magnetic impurity are considered in an external magnetic field. The electron-hole spin interaction and s,p-d interactions between electron, hole and magnetic impurity are also taken into account in the calculations. It is shown that due to the s,p-d spin interactions the ground state exciton energy splits into 12 doubly degenerated energy levels. The external magnetic field removes this degeneracy. A novel method is proposed here to determine the values of the strengths of s,p-d interactions. The optical spectrum of the system for different polarizations of the incident light and for different initial states of the magnetic impurity spin projection is also studied.     

A comparative study of a Heusler alloy Co2FeGe using LSDA and LSDA+U

We have calculated the on-site Coulomb repulsion (U) for the transition elements Co and Fe. To study the impact of Hubbard potential or on-site Coulomb repulsion (U) on structural and electronic properties the calculated values of U were added on GGA and LSDA. We performed the structure optimization of Co₂FeGe based on the generalized gradient approximation (GGA and GGA+U). The calculation of electronic structure was based on the full potential linear augmented plane wave (FP-LAPW) method and local spin density approximation (LSDA) as well as exchange correlation LSDA+U. The Heusler alloy Co₂FeGe fails to give the half-metallic ferromagnetism (HMF) when treated with LSDA. The LSDA+U gives a good result to prove that Co₂FeGe is a HMF with a large gap of 1.10 eV and the Fermi energy (E_F) lies at the middle of the gap of minority spin. The calculated density of states (DOS) and band structure show that Co₂FeGe is a HMF when treated with LSDA+U.     

A first-principles study on the electronic structure of one-dimensional [TM(Bz)]∞ polymer (TM= Y, Zr, Nb, Mo, and Tc)

A systematic density functional theory (DFT) study has been performed to investigate the electronic and magnetic properties of one-dimensional sandwich polymers constructed with benzene (Bz) and the second-row transition metal (TM = Y, Zr, Nb, Mo, and Tc). Within the framework of generalized gradient approximation (GGA), [Tc(Bz)]_∞ is a ferromagnetic half-metal, and [Nb(Bz)]_∞ is a ferromagnetic metal. With the on-site Coulomb interaction for 4d TM atoms being taken into account, [Tc(Bz)]_∞ keeps a robust half-metallic behavior, while [Nb(Bz)]_∞ becomes a spin-selective semiconductor. The stability of the half-metallic [Tc(Bz)]_∞ polymer is discussed based on magnetic anisotropy energy (MAE). Compared with 0.1 meV per metal atom in [Mn(Bz)]_∞, the calculated MAE for [Tc(Bz)]_∞ is 2.3 meV per metal atom. Such a significantly larger MAE suggests that Tc(Bz)]_∞ is practically more promising than its first-row TM equivalent.     

Electronic structures and magnetic properties of CrSiTe3 single-layer nanoribbons

One-dimensional nanoribbons usually exhibit considerably different properties compared to their monolayer counterparts due to the formation of edge states and limited width. In this study, we systematically investigate the stability, electronic structures and magnetic properties of CrSiTe₃ single-layer nanoribbons with different edge configurations and ribbon widths using first-principles calculations. The results show that the edge energies (less than 0.4 eV/Å) for all studied CrSiTe₃ nanoribbons are much lower than that of graphene and many transition-metal dichalcogenide nanoribbons, indicating their stability and easy formation. Compared to the CrSiTe₃ monolayer with ferromagnetic semiconductor characteristics, some of CrSiTe₃ nanoribbons (N-SiCr-ZNRs, N-Te-ZNRs, N-TeCr-ANRs and N-Te-ANRs) become half-metal due to the hybridization between the d orbitals of edge Cr atoms and the p orbitals of edge Te atoms. While N-SiTe-ANRs are bipolar magnetic semiconductors, in which the states near Fermi level are localized around the nanoribbons edge. Our results show that CrSiTe₃ single-layer nanoribbons are promising candidates suitable for applications in spintronic devices.     

Localization for 4f electrons in a heavy fermion compound CeCu2Si2: Insights from dynamical mean-field theory

A first principles calculation is carried out on a typical heavy fermion system-CeCu₂Si₂ by using a many-body method combing density functional theory (DFT) and dynamical mean-field theory (DMFT) along with the on-site Coulomb repulsion (represented by the Hubbard U parameter) for capturing the electronic correlation due to the incompletely filled Ce 4f orbitals. The results establish that the average occupation of Ce 4f electrons n_f is about 1.02 (mainly 4f¹ atomic configuration), close to the nominal occupation in pure Ce metal and in good agreement with the spectrum function in this work and the available experimental observations. The imaginary part of the impurity Green function indicates that the Ce 4f j = 5/2 and j = 7/2 states have metallic and insulating behavior, respectively. The dehybridization between the Ce 4f orbitals and ligand valence orbitals in the vicinity of the Fermi level is responsible for the localized 4f state and heavy fermionic behavior in this system.     

Observation of p- and d-like surface states on CuCl(100) by angle-resolved photoemission

In the course of a systematic ultraviolet photoemission study of the electronic band structure of CuCl, we have identified two occupied surface states on CuCl(100), situated at 0.25 and 3.0 eV below valence band maximum in normal emission spectra. They essentially show pure p- and d-like orbital symmetry, respectively. We interpret them as a chlorine p_x,y-like occupied antibonding resonance and a copper Γ₁₂-derived state split off from the bulk orbitals by the surface potential. We also present critical point energies along Γ-X and Γ-L.