Comparative study of ethanol sensor based on gold nanoparticles: ZnO nanostructure and gold: ZnO nanostructure

Gold colloid:ZnO nanostructures were prepared from Zn powder by using thermal oxidation technique on alumina substrates, then it was impregnated by gold colloid for comparative study. The gold colloid is the solution prepared by chemical reduction technique; it appeared red color for gold nanoparticle solution and yellow color for gold solution. The heating temperature and sintering time of thermal oxidation were 700 °C and 24 h, respectively under oxygen atmosphere. The structural characteristics of gold colloid:ZnO nanostructures and pure ZnO nanostructures were studied using filed emission scanning electron microscope (FE-SEM). From FE-SEM images, the diameter and length of gold colloid:ZnO nanostructures and ZnO nanostructures were in the ranges of 100-500 nm and 2.0-7.0 μm, respectively. The ethanol sensing characteristics of gold colloid:ZnO nanostructures and ZnO nanostructures were observed from the resistance alteration under ethanol vapor atmosphere at concentrations of 50, 100, 200, 500, and 1000 ppm with the operating temperature of 260-360 °C. It was found that the sensitivity of sensor depends on the operating temperature and ethanol vapor concentrations. The sensitivity of gold colloid:ZnO nanostructures were improved with comparative pure ZnO nanostructures, while the optimum operating temperature was 300 °C. The mechanism analysis of sensor revealed that the oxygen species on the surface was O²⁻.     

Low operating temperature of oxygen gas sensor based on undoped and Cr-doped ZnO films

Undoped and doped ZnO with 1 at.% (atomic percentage) chromium (Cr) was synthesized by RF reactive co-sputtering for oxygen gas sensing applications. The prepared films showed a highly c-oriented phase with a dominant (0 0 2) peak at a Bragg angle of around 34.2°. The operating temperature of the prepared ZnO sensor was around 350 °C and shifted to around 250 °C for the doped ZnO sensor which is lower than that of previously reported work. The sensitivity of the sensor toward oxygen gas was enhanced by doping ZnO with 1 at.% Cr. Good stability and repeatability of the sensor were demonstrated when tested under different concentration of oxygen atmosphere.     

The structural and optical properties of ZnO/Si thin films by RTA treatments

ZnO/Si thin films were prepared by rf magnetron sputtering method and some of the samples were treated by rapid thermal annealing (RTA) process at different temperatures ranging from 400 to 800 °C. The effects of RTA treatment on the structural properties were studied by using X-ray diffraction and atomic force microscopy while optical properties were studied by the photoluminescence measurements. It is observed that the ZnO film annealed at 600 °C reveals the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied. The enhanced UV emission from the film annealed at 600 °C is attributed to the improved crystalline quality of ZnO film due to the effective relaxation of residual compressive stress and achieving maximum grain size.     

Low-temperature CO gas sensors based on Au/SnO2 thick film

A study on the low-temperature CO gas sensors based on Au/SnO₂ thick film was reported. Au/SnO₂ powders were prepared by a deposition-precipitation method. Thick films were fabricated from Au/SnO₂ powders. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) analyses were carried out for investigation of morphology and crystalline structure. Au/SnO₂ thick film sensors exhibited high sensitivity to CO gas at relatively low operating temperature (83-210 °C). We also reported the effect of the calcination temperature of Au/SnO₂ on the CO gas sensing behavior. The optimal calcination temperature of Au/SnO₂ was 300 °C.     

Hydrogen sensors based on ZnO nanoparticles

Hydrogen sensing characteristics of thick films of nanoparticles (∼35 nm diameter) of ZnO, 3% Co doped ZnO, 1% Pt-impregnated ZnO and 1% Pt-impregnated 3% Co-ZnO have been investigated. The last composition exhibits the highest sensitivity for 10-1000 ppm H₂, reaching values upto 1700 as well as good response and recovery times at 125 °C or lower. The sensor is not affected significantly upto 50% relative humidity.     

Synthesis and H2 sensing properties of aligned ZnO nanotubes

Aligned ZnO nanotubes with the outer radius of about 200 nm were synthesized by a two-step approach, which involves electrospinning and sputtering techniques. The ZnO nanotubes are polycrystalline hexagonal structure, indicted by XRD and TEM analysis. The ZnO nanotubes show sensing property to H₂. The sensor response of the aligned nanotubes to 100 ppm H₂ increases from 2.3 to 3.6 with the temperature increasing from 200 to 400 °C. Beside, the sensor response of the ZnO nanotubes increases compared with that of the ZnO film prepared under the same condition.     

The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering

Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 °C, 600 °C, 800 °C, and 1000 °C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 °C is determined as optimal annealing temperature for SAW devices. At 400 °C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 °C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k²) of ZnO film decrease from 3.8% at 600 °C to 1.49% at 1000 °C.     

Development of film sensors based on ZnO nanoparticles for amine gas detection

A novel ZnO fluorescent film has been successfully fabricated by dipping a glass substrate into the N,N-dimethylformamide aqueous solution of Zn(Ac)₂ at low temperature (50 °C), then aged for 24 h in ZnO colloid dispersion. The morphology, structure, room-temperature photoluminescence (PL) spectra and gas sensing measurement were used to characterize the film. It has been demonstrated that the glass slide is the promising substrate for the deposition of ZnO particles, and there are almost uniformly distributed nano-particles on the surface of the substrates. It has been also revealed that the photo-luminescence emission of the film is selectively sensitive to the presence of amine, a possible explanation from the aspect of the sensing mechanism was proposed. The detection limit for amine vapor is calculated 162.0 ppm. Importantly, the response is reversible. Accordingly, it is anticipated that the film may be developed into amine sensor device.     

Epitaxial ZnO films grown on ZnO-buffered c-plane sapphire substrates by hydrothermal method

ZnO films are hydrothermally grown on ZnO-buffered c-plane sapphire substrates at a low temperature of 70 °C. A radio-frequency (RF) reactive magnetron sputtering has been used to grow the ZnO buffer layers. X-ray diffraction, scanning electron microscopy, and room temperature photoluminescence are carried out to characterize the structure, morphology and optical property of the films. It is found that the films are stress-free. The epitaxial relationship between the ZnO film and the c-plane sapphire substrate is found to be ZnO (0 0 0 1)||Al₂O₃ (0 0 0 1) in the surface normal and in plane. Sapphire treatment, as such acid etching, nitridation, and oxidation are found to influence the nucleation of the film growth, and the buffer layers determine the crystalline quality of the ZnO films. The maximum PL quantum efficiency of ZnO films grown with hydrothermal method is found to be about 80% of single-crystal ZnO.     

Effects of post-annealing on the structural and nanomechanical properties of Ga-doped ZnO thin films deposited on glass substrate by rf-magnetron sputtering

In this study, the effects of post-annealing on the structure, surface morphology and nanomechanical properties of ZnO thin films doped with a nominal concentration of 3 at.% Ga (ZnO:Ga) are investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) and nanoindentation techniques. The ZnO:Ga thin films were deposited on the glass substrates at room temperature by radio frequency magnetron sputtering. Results revealed that the as-deposited ZnO:Ga thin films were polycrystalline albeit the low deposition temperature. Post-annealing carried out at 300, 400 and 500 °C, respectively, has resulted in progressive increase in both the average grain size and the surface roughness of the ZnO:Ga thin film, in addition to the improved thin films crystallinity. Moreover, the hardness and Young's modulus of ZnO:Ga thin films are measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The hardness and Young's modulus of ZnO:Ga thin films increased as the annealing temperature increased from 300 to 500 °C, with the best results being obtained at 500 °C.     

Effects of annealing on the structure and photoluminescence of ZnO-sputtered coaxial nanowires

We reported the preparation and annealing effects of Zinc oxide ZnO/SiO_x core-shell nanowires, in which ZnO shell layers were deposited by sputtering. Based on scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and photoluminescence (PL) investigations, we monitored structural and optical changes with respect to the post-annealing process. The samples were mostly amorphous with some crystalline ZnO structure, whereas annealing at 900-1000 °C reduced the amount of Zn elements. Thermal annealing induced change in the shape of the PL emission spectra.     

Microstructural and surface property variations due to the amorphous region formed by thermal annealing in Al-doped ZnO thin films grown on n-Si (1 0 0) substrates

X-ray diffraction (XRD) patterns revealed that the as-grown and annealed Al-doped ZnO (AZO) films grown on the n-Si (1 0 0) substrates were polycrystalline. Transmission electron microscopy (TEM) images showed that bright-contrast regions existed in the grain boundary, and high-resolution TEM (HRTEM) images showed that the bright-contrast regions with an amorphous phase were embedded in the ZnO grains. While the surface roughness of the AZO film annealed at 800 °C became smoother, those of the AZO films annealed at 900 and 1000 °C became rougher. XRD patterns, TEM images, selected-area electron diffraction patterns, HRTEM images, and atomic force microscopy (AFM) images showed that the crystallinity in the AZO thin films grown on the n-Si (1 0 0) substrates was enhanced resulting from the release in the strain energy for the AZO thin films due to thermal annealing at 800 °C. XRD patterns and AFM images show that the crystallinity of the AZO thin films annealed at 1000 °C deteriorated due to the formation of the amorphous phase in the ZnO thin films.     

Influence of substrate temperature on the optical and piezoelectric properties of ZnO thin films deposited by rf magnetron sputtering

In this study, ZnO thin films were fabricated using the rf magnetron sputtering method and their piezoelectrical and optical characteristics were investigated for various substrate temperatures. The ZnO thin film has the largest crystallization orientation for the (0 0 2) peak and the smallest FWHM value of 0.56° at a substrate temperature of 200 °C. The surface morphology shows a relatively dense surface structure at 200 °C compared to the other substrate temperatures. The surface roughness shows the smallest of 1.6 nm at a substrate temperature of 200 °C. The piezoelectric constant of the ZnO thin film measured using the pneumatic loading method (PLM) has a maximum value of 11.9 pC/N at a substrate temperature of 200 °C. The transmittance of the ZnO thin film measured using spectrophotometry with various substrate temperatures ranged from 75 to 93% in the visible light region. By fitting the refractive index from the transmittance to the Sellmeir dispersion relation, we can predict the refractive index of the ZnO thin film according to the wavelength. In the visible light range, the refraction index of the ZnO thin film deposited at a substrate temperature of 200 °C is the range of 1.88-2.08.     

Humidity sensing properties of Pd-doped ZnO nanotetrapods

Pd²⁺-doped ZnO nanotetrapods were prepared and studied for the humidity detection application. The humidity sensors developed were featured by combination of a quartz crystal microbalance (QCM) as a transducer and Pd²⁺-doped ZnO nanotetrapods as a sensing element. The ZnO nanotetrapods were synthesized by evaporating highly pure zinc pellets (99.999%) at 900 °C in air and PdCl₂ was doped on by traditional solution mixing process. Then the mixed solution distributed onto the electrode surfaces of the quartz crystal at room temperature. Pd²⁺-doped ZnO nanotetrapods were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The experimental results indicated that the response of the sensors varied with the different dosage PdCl₂. Linear regression algorithm was used for evincing the highly linear behavior of the Pd²⁺-doped ZnO nanotetrapods sensor. In this humidity sensing system, the Pd²⁺-doped ZnO nanotetrapods sensing material coated on the gold electrode of QCM showed good sensitivity (∼74.24324 Hz/%RH (relative humidity)), reproducibility, linearity (R² = −0.98834), short response and recovery time (less than 5 s).     

Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films

Al-doped ZnO (AZO) and (Al, Na) co-doped ZnO (ANZO) thin films were prepared via sol-gel technique with an annealing process at temperatures between 450 and 550 °C for 60 min in air ambient, and their structural and optical properties have been investigated. The deposited films exhibited hexagonal zinc oxide structure except annealing at 450 °C. For the 500 °C-annealed samples, the surface morphology was analyzed via scanning electron microscopy, Photoluminescence (PL) of different Na content ANZO thin films showed that there were very obvious violet and blue emission bands between 400 and 500 nm, and intensity of which were enhanced with Na content increasing. Transparency of the films was improved along with increasing Na content. The result of UV indicated the absorb bands appeared obviously red shift with Na doping into ZnO, the optical gaps of all films far beyond 3.37 eV of pure ZnO, and gradually decreased with Na content increasing, this is very virtual for improving photoelectricity performance of transparent conduct oxide (TCO) film. The possible origins responsible for structure and optical properties also had been discussed.     

Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 °C with the concentration of 0.3 M exhibits the best structural and optical properties.     

Study on effects of substrate temperature on growth and structure of alignment carbon nanotubes in plasma-enhanced hot filament chemical vapor deposition system

Alignment carbon nanotubes (ACNTs) were synthesized on silicon substrate coated with Ni catalyst film and Ta buffer layer by plasma-enhanced hot filament chemical vapor deposition using CH₄, NH₃, and H₂ as the reaction gas, and they were investigated by scanning electron microscopy and transmission electron microscopy. It is found that the diameter of the bamboo-structured ACNTs is increased from 62 to 177 nm when the substrate temperature was changed from 626 to 756 °C. Their growth rate is enhanced by the substrate temperature in a range of 626-683 °C and it is reversely reduced with the substrate temperature after the substrate temperature is over 683 °C. Beginning with wetting phenomenon, the effects of the substrate temperature on the structure and growth rate of the ACNTs are analyzed.     

ZnO thin film with nanorod arrays applied to fluid sensor

A ZnO guiding layer with nanorod arrays grown on a 90°-rotated ST-cut (42°45) quartz substrate was used to fabricate a Love wave fluid sensor. ZnO nanorod arrays synthesized on the guiding layer enhance the sensitivity of the flow rate. ZnO thin films were deposited by radio frequency magnetron sputtering and ZnO nanorod arrays were then synthesized on the thin films via the hydrothermal method. The crystalline structure and surface morphology of ZnO thin films and nanorod arrays were examined by X-ray diffraction and scanning electron microscopy. The effects of the thickness of ZnO thin film and the surface morphology of ZnO nanorod arrays on the sensitivity of flow rate were investigated. A linear response between flow rate and the return loss of the sensor with one-port resonator type can be obtained by adjusting the thickness of ZnO thin film and the length of nanorod arrays.     

Thickness influence on surface morphology and ozone sensing properties of nanostructured ZnO transparent thin films grown by PLD

Transparent zinc oxide (ZnO) thin films with a thickness from 10 to 200 nm were prepared by the PLD technique onto silicon and Corning glass substrates at 350 °C, using an Excimer Laser XeCl (308 nm). Surface investigations carried out by atomic force microscopy (AFM) and X-ray diffraction (XRD) revealed a strong influence of thickness on film surface topography. Film roughness (RMS), grain shape and dimensions correlate with film thickness. For the 200 nm thick film, the RMS shows a maximum (13.9 nm) due to the presence of hexagonal shaped nanorods on the surface. XRD measurements proved that the films grown by PLD are c-axis textured. It was demonstrated that the gas sensing characteristics of ZnO films are strongly influenced and may be enhanced significantly by the control of film deposition parameters and surface characteristics, i.e. thickness and RMS, grain shape and dimension.     

Fabrication of diamond nanorods for gas sensing applications

Diamond nanorods were fabricated for a sensing device by utilizing reactive ion etching in CF₄/O₂ radio frequency plasma. The length of the nanorods has been controlled by the ion etching time. The obtained morphologies were investigated by scanning electron microscopy. The gas sensing properties of the H-terminated diamond-based sensor structures are indicating that we have achieved high sensitivity to detect phosgene gas. Also, our sensor exhibited good selectivity between humid air and phosgene gas if the measurement is conducted at elevated temperatures, such as 140 °C. Furthermore, such sensor response rating could reach as high value as 4344 for the phosgene gas, which was evaluated for the sample consisting of the longest nanorods (up to 200 nm).