Field emission properties of DLC and phosphorus-doped DLC films prepared by electrochemical deposition process

Field emission behavior of diamond-like carbon (DLC) and phosphorus-doped DLC (p-DLC) films prepared by electrochemical deposition process was comparatively investigated. It was shown phosphorus incorporation in the DLC film could lower the turn on field from 12 to 9.5 V/μm and increase the current density from 12.6 to 45.7 μA/mm² under high electric field. And better field emission performance of p-DLC films would be mainly attributed to the influence of the surface morphology and the changes of microstructure due to the phosphorus incorporation.     

类金刚石和碳氮薄膜的电化学沉积及其场发射性能研究

利用电化学方法在室温下成功地沉积了类金刚石(DLC)薄膜和非晶CN_x薄膜，并 对制备条件进行了讨论.通过扫描电子显微镜、傅里叶变换红外光谱技术，分析了薄膜的表面形貌和化学结合状态.场发射测量结果表明：DLC膜和非晶CN_x的开启场分别为88和 10V/μm；并且在23V/μm的电场下，DLC膜和非晶CN_x膜的发射电流密度分别达到10 和037mA/cm². 关键词： 电化学沉积 类金刚石薄膜 x薄膜')" href="#">CN_x薄膜 场致电子发射     

Low-macroscopic field emission from silicon-incorporated diamond-like carbon film synthesized by dc PECVD

Silicon-incorporated diamond-like carbon (Si-DLC) films were deposited via dc plasma-enhanced chemical vapor deposition (PECVD), on glass and alumina substrates at a substrate temperature 300 °C. The precursor gas used was acetylene and for Si incorporation, tetraethyl orthosilicate dissolved in methanol was used. Si atomic percentage in the films was varied from 0% to 19.3% as measured from energy-dispersive X-ray analysis (EDX). The binding energies of C 1s, Si 2s and Si 2p were determined from X-ray photoelectron spectroscopic studies. We have observed low-macroscopic field electron emission from Si-DLC thin films deposited on glass substrates. The emission properties have been studied for a fixed anode-sample separation of 80 μm for different Si atomic percentages in the films. The turn-on field was also found to vary from 16.19 to 3.61 V/μm for a fixed anode-sample separation of 80 μm with a variation of silicon atomic percentage in the films 0% to 19.3%. The turn-on field and approximate work function are calculated and we have tried to explain the emission mechanism there from. It was found that the turn-on field and effective emission barrier were reduced by Si incorporation than undoped DLC.     

Characterization of diamond films deposited on Re substrate by magnetic field-assisted hot filament chemical vapor deposition

A periodically magnetic field (PMF) was used in a hot-filament chemical vapor deposited (HFCVD) for diamond growth on the rhenium substrate. The morphology, band structures and crystalline structure of the film were analyzed by the scanning electron microscopy (SEM), Raman spectroscopy and X-ray diffractometer (XRD), respectively. The results show that the thickness of the diamond film is about 2900 nm by 4 h deposition with magnetic field-assisted. There is no interlayer between diamond film and the rhenium substrate. The result shows that the turn on voltage of the sample is enhanced from 3.3 to 2.6 V/μm with the PMF. Also the total emission current density at 6.2 V/μm increased from 6.3 to 21.5 μA/cm².     

Field electron emission of carbon-based nanocone films

Diamond nanocone, graphitic nanocone, and mixed diamond and graphitic nanocone films have been synthesized through plasma enhanced hot filament chemical vapor deposition (HFCVD). The field emission properties of these films have been experimentally investigated. The studies have revealed that all three kinds of nanocone films have excellent field electron emission (FEE) properties including low turn-on electric field and large emission current at low electric field. Compared with the diamond nanocone films (emission current of 86 μA at 26 V/μm with the turn-on field of 10 V/μm), the graphitic nanocone films exhibit higher FEE current of 1.8×10² μA at 13 V/μm and a lower turn-on filed of 4 V/μm. The mixed diamond and graphitic nanocone films have been found to posses FEE properties similar to graphitic nanocone films (emission current of 1.7×10² μA at 20 V/μm with the turn-on field of 5 V/μm), but have much better FEE stability than the graphitic nanocone films. PACS 81.07.Bc; 81.05.Uw; 79.70.+q     

The microstructure, mechanical and friction properties of protective diamond like carbon films on magnesium alloy

Protective hard coatings deposited on magnesium alloys are believed to be effective for overcoming their poor wear properties. In this work, diamond-like carbon (DLC) films as hard protective films were deposited on AZ91 magnesium alloy by arc ion plating under negative pulse bias voltages ranging from 0 to −200 V. The microstructure, composition and mechanical properties of the DLC films were analyzed by scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and nanoindentation. The tribological behavior of uncoated and coated AZ91 magnesium alloy was investigated using a ball-on-disk tribotester. The results show that the negative pulse bias voltage used for film deposition has a significant effect on the sp³ carbon content and mechanical properties of the deposited DLC films. A maximum sp³ content of 33.3% was obtained at −100 V, resulting in a high hardness of 28.6 GPa and elastic modulus of 300.0 GPa. The DLC films showed very good adhesion to the AZ91 magnesium alloy with no observable cracks and delamination even during friction testing. Compared with the uncoated AZ91 magnesium alloy, the magnesium alloy coated with DLC films exhibits a low friction coefficient and a narrow, shallow wear track. The wear resistance and surface hardness of AZ91 magnesium alloy can be significantly improved by coating a layer of DLC protective film due to its high hardness and low friction coefficient.     

Field electron emission from HfNxOy thin films deposited by direct current sputtering

HfN_xO_y thin films were deposited on Si substrates by direct current sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). SEM indicates that the film is composed of nanoparticles. AFM indicates that there are no sharp protrusions on the surface of the film. XRD pattern shows that the films are amorphous. The field electron emission properties of the film were also characterized. The turn-on electric field is about 14 V/μm at the current density of 10 μA/cm², and at the electric field of 24 V/μm, the current density is up to 1 mA/cm². The field electron emission mechanism of the HfN_xO_y thin film is also discussed.     

Field emission properties of polymer-converted carbon films by heat treatment

Carbon films were prepared on single crystal silicon substrates by heat-treatment of a polymer-poly(phenylcarbyne) at 800 °C in Ar atmosphere. The heat-treatment caused the change of the polymer into carbon film, which exhibited good field emission properties. Low turn-on emission field of 4.3 V/μm (at 0.1 μA/cm²) and high emission current density of 250 μA/cm² (at 10 V/μm) were observed for the polymer-converted carbon films. This behavior was demonstrated to be mainly related to the microstructure of the carbon films, which consisted of fine carbon nanoparticles with high sp² bonding. The carbon films, which can be deposited simply with large areas, are promising for practical applications in field emission display.     

Enhanced field emission from LaB6 thin films with nanoprotrusions grown by pulsed laser deposition on Zr foil

Lanthanum hexaboride (LaB₆) films have been deposited on a zirconium foil by pulsed laser deposition method. The field emission studies of the LaB₆ deposited film have been performed in the planar diode configuration under ultra high vacuum conditions. The Fowler-Nordheim plots were found to be linear in accordance with the quantum mechanical tunneling phenomenon. A typical field emission current of 7.02 μA was drawn at an applied electric field of 2 V/μm. The field enhancement factor is calculated to be 8913 cm⁻¹, indicating that the field emission is from nanoscale protrusions present on the emitter surface. The atomic force microscope (AFM) investigation of the surface clearly shows the conical shaped nanoprotrusions of few hundred nanometers with asperities of 20-40 nm on its top. The emission current-time plot recorded at the pre-set value of emission current of 5 μA over a period of more than 3 h exhibits an initial increase and subsequent stabilization of the current. The results reveal that the LaB₆/Zr field emitter obtained by the pulsed laser deposition (PLD) is a promising cathode material for practical applications in field emission-based devices.     

Influence of high-energy electron irradiation on field emission properties of multi-walled carbon nanotubes (MWCNTs) films

The effect of very high energy electron beam irradiation on the field emission characteristics of multi-walled carbon nanotubes (MWCNTs) has been investigated. The MWCNTs films deposited on silicon (Si) substrates were irradiated with 6 MeV electron beam at different fluence of 1×10¹⁵, 2×10¹⁵ and 3×10¹⁵ electrons/cm². The irradiated films were characterized using scanning electron microscope (SEM) and micro-Raman spectrometer. The SEM analysis clearly revealed a change in surface morphology of the films upon irradiation. The Raman spectra of the irradiated films show structural damage caused by the interaction of high-energy electrons. The field emission studies were carried out in a planar diode configuration at the base pressure of ∼1×10⁻⁸ mbar. The values of the threshold field, required to draw an emission current density of ∼1 μA/cm², are found to be ∼0.52, 1.9, 1.3 and 0.8 V/μm for untreated, irradiated with fluence of 1×10¹⁵, 2×10¹⁵ and 3×10¹⁵ electrons/cm². The irradiated films exhibit better emission current stability as compared to the untreated film. The improved field emission properties of the irradiated films have been attributed to the structural damage as revealed from the Raman studies.     

Electron emission characteristics of Al-AlN granular films

An electron conduction emitter of Al-AlN granular films was proposed for surface conduction electron emission device in this paper. The Al-AlN granular films with thickness of 30 nm were prepared between two co-planar electrodes with gap of 10 μm by magnetron sputtering. After electroforming the Al-AlN granular films, the films’ structure could be recovered by applying the periodic device voltage (V_f). Stable and uniform electron emission was observed with turn-on voltage of 5.3 V and threshold voltage of 9 V. The emitter emission current (I_e) of 4.84 μA for 36 cells was obtained with the anode voltage of 2.5 kV and the device voltage of 12 V. In addition, Fowler-Nordheim plots for I_e-V_f properties showed that the electron emission mechanism should be field emission.     

Synthesis of amorphous carbon nanowalls by DC-PECVD on different substrates and study of its field emission properties

Amorphous carbon thin films with quasi vertical nanowall-like morphologies have been synthesized via direct current plasma enhanced chemical vapor deposition on both copper and silicon substrates with acetylene as a carbon precursor. The deposition temperature and pressure were maintained at 750 °C and 5 mbar respectively. The morphology of the as-prepared samples has been investigated with the help of a field emission scanning electron microscope and an atomic force microscope, both revealing nanowall-like morphologies with thicknesses of the walls ∼6-15 nm. The as-prepared carbon nanowalls showed good field electron emission with a turn-on field as low as 1.39 V/μm. The effect of inter-electrode distance on the field electron emission has also been studied in detail.     

Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B₂O₃ concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B₂O₃ concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/μm, respectively. The field emission current stability investigated at the preset value of ∼1 μA is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.     

Modulation of field emission properties of vertically aligned ZnO nanorods with aspect ratio and number density

Vertically aligned ZnO nanorod arrays with different aspect ratios were synthesized by hybrid wet chemical route. Modulation of the field emission properties (FE) with aspect ratio of ZnO nanorods was examined. With the increase in the aspect ratio, the emission current density increases from 0.02 to 8 μA/cm² at 7.0 V/μm. Turn-on voltage was seen to decrease from 9.6 to 7 V/μm at a current density of 10 μA/cm² with the increase in aspect ratio in the ZnO films. The interrelation between the FE characteristics (emission thresholds, current density, surface uniformity, etc.) and microstructure of the ZnO nanostructure obtained from scanning electron microscopy (SEM) and atomic force microscopy (AFM) was discussed. Quality of the ZnO nanorods was also examined by using Raman spectroscopy and Fourier transformed infrared spectroscopy (FTIR). It was found that the observed enhancements of FE characteristics could mainly be attributed to the increase in aspect ratio and associated number density of ZnO nanorods.     

Field emission property of copper nitride thin film deposited by reactive magnetron sputtering

Copper nitride (Cu₃N) thin film was deposited on silicon (Si) substrate by reactive magnetron sputtering method. X-ray diffraction measurement showed that the film was composed of Cu₃N crystallites with anti-ReO₃ structure and exhibited preferential orientation of [1 0 0] direction. The field emission (FE) result showed that Cu₃N film had a turn-on electric field of about 3 V/μm at a current density of 1 μA/cm² and a current density of 700 μA/cm² was obtained at the electric field of 24 V/μm. The emission mechanism inferred by Fowler-Nordheim (FN) plot is shown as following: thermal electron emission at low field region and tunneling electron emission at high field region.     

Fabrication and properties of film-under-gate field emission arrays with SnO2 emitters for flat lamp

The film-under-gate field emission arrays (FEAs) have been fabricated on the glass substrates by conventional photolithography, anodic oxidation and lift-off method. SnO₂ emitters were deposited on the cathode electrodes of under-gate triode by screen printing. The image of film-under-gate field emission arrays with SnO₂ emitters was measured by the optical microscopy and field emission scanning electron microscopy (FESEM). The electric field distributions and electron trajectories of film-under-gate triode were simulated in the same anode voltage and different gate voltage by ANSYS. I-V characteristics of film-under-gate triode with SnO₂ emitters were investigated. It indicated that the SnO₂ emitters by screen printing uniformly distributed on the surface of cathode electrodes. The maximum anode current in this triode structure could come to 385 μA and the highest lightness was approximately 270 cd/m² as the gate and anode voltage was 140 V and 2000 V, respectively, at the anode-cathode spacing of 1100 μm. Moreover, the emission current fluctuation was less than 5% for 8 h. It showed that the fabricated device has a good stability of field emission performance and long lifetime, which may lead to practical applications for field emission electron source based on flat lamp for back light units (BLUs) in liquid crystal display (LCD).     

Low voltage electrodeposition of diamond like carbon (DLC)

Attempt has been made to deposit diamond like carbon (DLC) films from ethanol through electrodeposition at low voltages (80-300 V) at 1 mm interelectrode separation. The films were characterized by atomic force microscopy (AFM), Scanning electron microscopy (SEM), Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and Auger electron Spectroscopy (AES). AFM investigations revealed the grain sizes are of tens of nanometers. The films were found to be continuous, smooth and close packed. Presence of peaks at 2958, 2929 and 2869 cm⁻¹ in FTIR spectrum indicates the bonding states to be of predominantly sp³ type (C-H). Raman spectroscopy analysis revealed two broad bands at ∼1350 and ∼1570 cm⁻¹. The downshift of the G-band of graphite is indicative of presence of DLC. Analysis of the Raman spectra for the samples revealed an improvement in the film quality with increase in the voltage. Micro Raman investigations indicate the formation of diamond phase at the deposition potential of 80 V. The sp² contents the films calculated from Auger electron spectra were calculated and were found to be 31, 19 and 7.8% for the samples prepared at 80, 150 and 300 V, respectively. A tentative mechanism for the formation of DLC has been proposed. These results indicate the possibility of deposition of DLC at low voltage.     

The influence of H2 plasma treatment on the field emission of amorphous GaN film

The influence of H₂ plasma treatment on the field emission properties of amorphous GaN (a-GaN) films is studied. It is found that the treatment makes little change to the surface morphology. The current density of the treated film decreases from 400 to 30 μA/cm² at the applied field of about 30 V/μm. The treatment can reduce the defects in a-GaN films, and therefore the treatment results in the weakening of the tunneling emission of the a-GaN film at the high field region. The treatment also seems to change the conduction mechanism of the a-GaN film.     

Electron field emission from boron doped microcrystalline diamond

Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N_B) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E_th) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm⁻² were obtained using electric fields less than 8 V/μm.     

A comparative study of field emission properties of carbon nanotube films prepared by vacuum filtration and screen-printing

A comprehensive comparative study of electron field emission properties of carbon nanotube (CNT) films prepared by vacuum filtration and screen-printing was carried out. Field emission performance of vacuum filtered CNT films with different filtered CNT suspension volumes was systematically studied, and the optimum electron emission was obtained with a low turn on field of ∼0.93 V/μm (at 1 μA/cm²) and a high field enhancement factor β of ∼9720. Comparing with screen-printed CNT films, vacuum filtered CNT films showed better electron emission performance, longer lifetime, and greater adhesive strength to substrates. This work reveals a potential use of vacuum filtered CNT films as field emission cathodes.