Structural, morphological and photoluminescence properties of W-doped ZnO nanostructures

W-doped ZnO nanostructures were synthesized at substrate temperature of 600 °C by pulsed laser deposition (PLD), from different wt% of WO₃ and ZnO mixed together. The resulting nanostructures have been characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy and photoluminescence for structural, surface morphology and optical properties as function of W-doping. XRD results show that the films have preferred orientation along a c-axis (0 0 L) plane. We have observed nanorods on all samples, except that W-doped samples show perfectly aligned nanorods. The nanorods exhibit near-band-edge (NBE) ultraviolet (UV) and violet emissions with strong deep-level blue emissions and green emissions at room temperature.     

Substrate effects on ZnO nanostructure growth via nanoparticle-assisted pulsed-laser deposition

The effects of various substrate conditions on the morphology, crystal structure and photoluminescence of ZnO nanostructures synthesized by nanoparticle-assisted pulsed-laser ablation deposition were investigated. It is concluded that the sapphire substrate with a 1 h anneal at 1000 °C is the most favorable to the vertical growth of ZnO nanostructures. SEM analysis indicates that the well-aligned diameter-modulated ZnO nanonails with unique shape were successfully synthesized on the annealed sapphire substrate. The as-synthesized ZnO nanostructures exhibit an ultraviolet emission at around 390 nm and the absent green emission under room temperature, indicating that there is a very low concentration of deep-level defects inside ZnO lattices. The novel ZnO nanostructures could offer novel opportunities for both fundamental research and technological applications.     

Synthesis of bamboo-leaf-shaped ZnO nanostructures by oxidation of Zn/SiO2 composite films deposited with radio frequency magnetron co-sputtering

Bamboo-leaf-shaped ZnO nanostructures were synthesized by oxidation of metal Zn/SiO₂ matrix composite thin films deposited on Si(1 1 1) substrates with radio frequency magnetron co-sputtering. The synthesized bamboo-leaf-shaped ZnO are single crystalline in nature with widths ranging from 30 to 60 nm and lengths of up to 5-10 μm, room temperature photoluminescence spectrum of the nanostructures shows a strong and sharp UV emission band at 372 nm and a weak and broad green emission band at about 520 nm which indicates relatively excellent crystallization and optical quality of the ZnO nanostructures synthesized by this novel method.     

Photoluminescence and Raman analysis of novel ZnO tetrapod and multipod nanostructures

Novel ZnO tetrapod and multipod nanostructures were successfully synthesized in bulk quantity through thermal evaporation method. The morphologies and structures of the ZnO nanostructures were characterized by scanning electron microscopy, X-ray diffraction and transmission electron microscopy. The results revealed that the ZnO nanostructures consisted of tetrapods and multipods with tower-like legs. The ZnO nanostructures were of high purity and were well crystallized with wurtzite structure. The preferred growth direction of legs was found to be the [0 0 0 1] direction. Possible growth mechanisms were proposed for the formation of the ZnO nanostructures. Room temperature photoluminescence (PL) spectra showed that the as-synthesized ZnO nanostructures had a strong green emission centered at 495 nm and a weak ultraviolet emission at 383 nm. Raman spectroscopy was also adopted to explore the structural quality of the ZnO nanostructures.     

The effect of substrate surface roughness on ZnO nanostructures growth

The ZnO nanowires have been synthesized using vapor-liquid-solid (VLS) process on Au catalyst thin film deposited on different substrates including Si(1 0 0), epi-Si(1 0 0), quartz and alumina. The influence of surface roughness of different substrates and two different environments (Ar + H₂ and N₂) on formation of ZnO nanostructures was investigated. According to AFM observations, the degree of surface roughness of the different substrates is an important factor to form Au islands for growing ZnO nanostructures (nanowires and nanobelts) with different diameters and lengths. Si substrate (without epi-taxy layer) was found that is the best substrate among Si (with epi-taxy layer), alumina and quartz, for the growth of ZnO nanowires with the uniformly small diameter. Scanning electron microscopy (SEM) reveals that different nanostructures including nanobelts, nanowires and microplates have been synthesized depending on types of substrates and gas flow. Observation by transmission electron microscopy (TEM) reveals that the nanostructures are grown by VLS mechanism. The field emission properties of ZnO nanowires grown on the Si(1 0 0) substrate, in various vacuum gaps, were characterized in a UHV chamber at room temperature. Field emission (FE) characterization shows that the turn-on field and the field enhancement factor (β) decrease and increases, respectively, when the vacuum gap (d) increase from 100 to 300 μm. The turn-on emission field and the enhancement factor of ZnO nanowires are found 10 V/μm and 1183 at the vacuum gap of 300 μm.     

Synthesis and photoluminescence properties of SnO2/ZnO hierarchical nanostructures

SnO₂/ZnO hierarchical nanostructures were synthesized by a two-step carbon assisted thermal evaporation method. SnO₂ nanowires were synthesized in the first step and were then used as substrates for the following growth of ZnO nanowires in the second step. Sn metal droplets were formed at the surfaces of the SnO₂ nanowires during the second step and were acted as catalyst to facilitate the growth of ZnO nanowires via vapor-liquid-solid mechanism. Room temperature photoluminescence measurements showed that the SnO₂/ZnO hierarchical nanostructures exhibited a strong green emission centered at about 520 nm and a weak emission centered at about 380 nm. The emissions from the SnO₂ were drastically constrained due to screen effect caused by the ZnO layer.     

Electrochemical synthesis and optical properties of ZnO thin film on In2O3:Sn (ITO)-coated glass

ZnO thin films were electrochemically deposited onto the ITO-coated glass substrate from an electrolyte consisted of 0.1 M Zn(NO₃)₂ aqueous solution at 65 ± 1 °C. A compact ZnO film with (0 0 2) preferred orientation was obtained at the applied potential of −1.3 V for 1200 s. It was also found that the morphology of the ZnO films grown at the potential of −1.3 V was characterized of single or coalescent hexagonal platelets. However, the ZnO crystals grown at the potential of −2.0 V was changed to be a bimodal size distribution. The band gap energy of the as deposited ZnO films, about 3.5 eV, was independent of both the applied potential and the deposition time, respectively. The minor amount of Zn(OH)₂ might be co-deposited with the formation of ZnO revealed by the FT-IR spectroscopy. Three strategies to improve the ZnO crystal quality based on the photoluminescence properties were proposed in the paper, which were (a) adopting the lower deposition potential, (b) increasing the deposition time at a certain potential, and (c) annealing after as-deposition, respectively.     

Effect of sputtered films on morphology of vertical aligned ZnO nanowires

Vertical aligned ZnO nanowires were grown by MOCVD technique on silicon substrate using ZnO and AlN thin films as seed layers. The shape of nanostructures was greatly influenced by the under laying surface. Vertical nanopencils were observed on ZnO/Si, whereas the nanowires on both sapphire and AlN/Si substrate have the similar aspect ratio. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy (HRTEM) confirmed the single crystalline growth of the ZnO nanowires along [0 0 1] direction. Room-temperature photoluminescence (PL) spectra of ZnO nanowires on AlN/Si clearly show a band-edge luminescence accompanied with a visible emission. More interestingly, no visible emission for the nanopencils on ZnO/Si substrates, were observed.     

Effect of temperature on pulsed laser deposition of ZnO films

ZnO thin films have been deposited on Si(1 1 1) substrates at different substrate temperature by pulsed laser deposition (PLD) of ZnO target in oxygen atmosphere. An Nd:YAG pulsed laser with a wavelength of 1064 nm was used as laser source. The influences of the deposition temperature on the thickness, crystallinity, surface morphology and optical properties of ZnO films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), selected area electron diffraction (SAED), photoluminescence (PL) spectrum and infrared spectrum. The results show that in our experimental conditions, the ZnO thin films deposited at 400 °C have the best surface morphology and crystalline quality. And the PL spectrum with the strongest ultraviolet (UV) peak and blue peak is observed in this condition.     

Morphological transition of ZnO nanostructures influenced by magnesium doping

Wurtzite zinc oxide (ZnO) nanochains have been synthesized through high-pressure pulsed laser deposition. The chain-like ZnO nanostructures were obtained from magnesium (Mg) doped ZnO targets, whereas vertically aligned nanorods were obtained from primitive ZnO targets. The Mg doping has influenced the morphological transition of ZnO nanostructures from nanorods to nanochains. The field emission scanning electron microscope images revealed the growth of beaded ZnO nanochains. The ZnO nanochains of different diameters 40 and 120 nm were obtained. The corresponding micro-Raman spectra showed strong E_2H mode of ZnO, which confirmed the good crystallinity of the nanochains. In addition to near band edge emission at 3.28 eV, ZnO nanochains show broad deep level emission at 2.42 eV than that of ZnO nanorods.     

Fabrication of complex nanostructures on ZnO crystals by the interference of three femtosecond laser beams

By adjusting the laser polarization combinations, fluences and pulse numbers, we fabricated several types of two-dimensional (2D) complex nanostructures on the surface of c-cut ZnO single crystal by the interference of three femtosecond laser beams with central wavelength of 800 nm, pulse duration of 50 fs and pulse repetition frequency of 1 kHz. The hexagonal 2D nanostructures with a period of 600 nm are very regular and uniform, in which nanoparticles, nanorings and nanoripples with sizes of 200 nm are embedded. Excited by 800 nm femtosecond laser pulses, the photoluminescence (PL) micrographs reveal that the 2D nanostructures can emit purer and brighter blue light compared with the plane surface. These nanostructures have potential applications in blue light-emitting diodes (LEDs), high density optical storage and other optoelectronic devices.     

Effect of zinc nitrate concentration on the structural and the optical properties of ZnO nanostructures

ZnO nanorods and nanodisks were formed on indium-tin-oxide-coated glass substrates by using an electrochemical deposition method. Scanning electron microscopy images showed that the ZnO nanorods were transformed into nanodisks with increasing Zn(NO₃)₂ concentration. X-ray diffraction patterns showed that the ZnO nanostructures had wurzite structures. The full widths at half maxima of the near band-edge emission peak of photoluminescence spectra at 300 K for ZnO nanorods were small, indicative of the high quality of the nanorods. These results indicate that the structural and the optical properties of ZnO nanostructures vary by changing Zn(NO₃)₂ concentration.     

Femtosecond pulsed laser deposition of nanostructured TiO2 films

Nanostructured deposits of TiO₂ were grown on Si (1 0 0) substrates by laser ablating a TiO₂ sintered target in vacuum or in oxygen using a Ti:sapphire laser delivering 80 fs pulses. The effect of the laser irradiation wavelength on the obtained nanostructures, was investigated using 800, 400 and 266 nm at different substrate temperatures and pressures of oxygen. The composition of the deposits was characterized using X-ray photoelectron spectroscopy (XPS) and the surface morphology was studied by environmental scanning electron microscopy (ESEM) and atomic force microscopy (AFM). Deposits are absent of microscopic droplets in all conditions explored. The best deposits, constituted by nanoparticles of an average diameter of 30 nm with a narrow size distribution, were obtained at the shorter laser wavelength of 266 nm under vacuum at substrate room temperature.     

Effects of crystalline quality on the ultraviolet emission and electrical properties of the ZnO films deposited by magnetron sputtering

The ZnO films were deposited on c-plane sapphire, Si (0 0 1) and MgAl₂O₄ (1 1 1) substrates in pure Ar ambient at different substrate temperatures ranging from 400 to 750 °C by radio frequency magnetron sputtering. X-ray diffraction, photoluminescence and Hall measurements were used to evaluate the growth temperature and the substrate effects on the properties of ZnO films. The results show that the crystalline quality of the ZnO films improves with increasing the temperature up to 600 °C, the crystallinity of the films is degraded as the growth temperature increasing further, and the ZnO film with the best crystalline quality is obtained on sapphire at 600 °C. The intensity of the photoluminescence and the electrical properties strongly depend on the crystalline quality of the ZnO films. The ZnO films with the better crystallinity have the stronger ultraviolet emission, the higher mobility and the lower residual carrier concentration. The effects of crystallinity on light emission and electrical properties, and the possible origin of the n-type conductivity of the undoped ZnO films are also discussed.     

Fabrication of ZnO nanostructures of various dimensions using patterned substrates

ZnO nanostructures were grown on silicon, porous silicon, ZnO/Si and AlN/Si substrates by low-temperature aqueous synthesis method. The shape of nanostructures greatly depends on the underlying surface. Scattered ZnO nanorods were observed on silicon substrate, whereas aligned ZnO nanowires were obtained by introducing sputtered ZnO film as a seed layer. Furthermore, both the combination of nanorods and the bunch of nanowires were found on porous silicon substrates, whereas platelet-like morphology was observed on AlN/Si substrates. XRD patterns suggest the crystalline nature of aqueous-grown ZnO nanostructures and high-resolution transmission electron microscopy images confirm the single-crystalline growth of the ZnO nanorods along [0 0 1] direction. Room-temperature photoluminescence characterization clearly shows a band-edge luminescence along with a visible luminescence in the yellow spectral range.     

Effect of source temperature on the morphology and photoluminescence properties of ZnO nanostructures

ZnO nanostructures have been synthesized by heating a mixture of ZnO/graphite powders using the thermal evaporation and vapor transport on Si(1 0 0) substrates without any catalyst and at atmospheric argon pressure. The influence of the source temperature on the morphology and luminescence properties of ZnO nanostructures has been investigated. ZnO nanowires, nanoflowres and nanotetrapods have been formed upon the Si(1 0 0) substrates at different source temperatures ranging from 1100 to 1200 °C. Room temperature photoluminescence (PL) spectra showed increase green emission intensity as the source temperature was decreased and ZnO nanowires had the strongest intensity of UV emission compared with other nanostructures. In addition, the growth mechanism of the ZnO nanostructures is discussed based on the reaction conditions.     

Photoluminescent properties of Sm-doped zinc oxide nanostructures

Sm³⁺-doped zinc oxide nanophosphors were synthesized by solution combustion method. The size of the ZnO:Sm³⁺ nanostructures ranges from 40-60 nm. The photoluminescence spectra of ZnO:Sm³⁺ nanostructures is different from that of pure ZnO. The emission spectra of ZnO:Sm³⁺ nanostructures show a strong narrow emission peak at 425 nm and weak peaks at 457, 472 and 482 nm when excited with 255 nm.     

1.54 μm emission mechanism of Er-doped zinc oxide thin films

Zinc oxide (ZnO) and Er-doped zinc oxide (ZnO:Er) thin films were formed by pulsed laser deposition, and characterized by photoluminescence (PL) and X-ray diffraction (XRD) in order to clarify the 1.54 μm emission mechanism in the ZnO:Er films. Er ions were excited indirectly by the 325 nm line of a He-Cd laser, and the comparison of the ultraviolet to infrared PL data of ZnO and ZnO:Er films showed that the 1.54 μm emission of Er³⁺ in ZnO:Er film appears at the expense of the band edge emission and the defect emission of ZnO. The crystallinity of the films was varied with the substrate temperature and post-annealing, and it was found that the intensity of the 1.54 μm emission is strongly related with the crystallinity of the films. There are three processes leading to the 1.54 μm emission; absorption of excitation energy by the ZnO host, energy transfer from ZnO to Er ions, and radiative relaxation inside Er ions, and it is suggested that the crystallinity plays an important role in the first two processes.     

Periodic surface nanostructures on polycrystalline ZnO induced by femtosecond laser pulses

Periodic surface nanostructures induced by femtosecond laser pulses on polycrystalline ZnO are presented. By translating the sample line-by-line under appropriate irradiation conditions, grating-like nanostructures with an average period of 160 nm are fabricated. The dependence of surface morphologies on the processing parameters, such as laser fluence, pulse number and laser polarization, are studied by scanning electronic microscope (SEM). In addition, photoluminescence (PL) analysis at room-temperature indicates that the PL intensity of the irradiated area increases significantly compared with the un-irradiated area. Using femtosecond laser pulses irradiation to fabricate periodic surface nanostructures on polycrystalline ZnO is efficient, simple and low cost, which shows great potential applications in ZnO-based optoelectronic devices.     

Improvement of electrical and optical properties of Ga and N co-doped p-type ZnO thin films with thermal treatment

Ga and N co-doped p-type ZnO thin films were epitaxially grown on sapphire substrate using magnetron sputtering technique. The process of synthesized Ga and N co-doped ZnO films was performed in ambient gas of N₂O. Hall measurement shows a significant improvement of p-type characteristics with rapid thermal annealing (RTA) process in N₂ gas flow, where more N acceptors are activated. The film rapid thermal annealed at 900 °C in N₂ ambient revealed the highest carrier concentration of 9.36 × 10¹⁹ cm⁻³ and lowest resistivity of 1.39 × 10⁻¹ Ω cm. In room and low temperature photoluminescence measurements of the as grown and RTA treated film, donor acceptor pair emission and exciton bound to acceptor recombination at 3.25 and 3.357 eV, respectively, were observed.