Enhanced luminescence of GdTaO4:Eu thin-film phosphors by K doping

The effect of K⁺ ions on GdTaO₄:Eu³⁺ thin-film phosphors was investigated in order to improve their luminescent properties. The GdTaO₄:Eu_0.1, K_x thin films were synthesized by sol-gel process, and characterized through measuring their microstructure and luminescence. The results indicated that photoluminescence (PL) intensity of GdTaO₄:Eu³⁺ film was improved remarkably by K doping. There were two maxima in the curve of PL intensity against K⁺ dopant concentration, where one was improved up to 2.1 times at x = 0.001 and the other was enhanced up to 2.7 times at x = 0.05. The first maximum was regarded as the alteration of the local environment surrounding the Eu³⁺ activator by incorporation of K⁺ ions, and the second maximum was due to the flux effect. Additionally, the luminescence increased with the increase of firing temperature from 800 °C to 1200 °C.     

Sol-gel preparation and photoluminescence property of YBO3:Eu/Tb nanocrystalline thin films

YBO₃:Eu³⁺/Tb³⁺ nanocrystalline thin films were successfully deposited onto quartz glass substrates by Pechini sol-gel dip-coating method, using rare-earth nitrates and boric acid as starting materials. The crystal structure, morphology, chemical composition and photoluminescence property of the films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy and fluorescence spectrophotometer. The results of XRD, AFM, XPS and FTIR revealed that the films were composed of spherical YBO₃:Eu³⁺/Tb³⁺ nanocrystals with average grain size of 80 nm. The YBO₃:Eu³⁺ film exhibited strong orange emission at 595 nm and red emission at 615 nm, which were, respectively ascribed to the (⁵D₀→⁷F₁) and (⁵D₀→⁷F₂) transitions of Eu³⁺. The YBO₃:Tb³⁺ film showed dominant green emission at 545 nm due to the ⁵D₄-⁷F₅ transition of Tb³⁺.     

Effects of x and R3+ on the luminescent properties of Eu3+ in nanocrystalline YVxP1-xO4:Eu3+ and RVO4:Eu3+ thin-film phosphors

Using inorganic oxides and salts instead of alkoxides as the main starting materials, we prepared nanocrystalline YV_xP_1-xO₄:Eu³⁺ and RVO₄:Eu³⁺ (0x1; R=Y,La,Gd) thin-film phosphors by the Pechini sol–gel dip-coating process. The resulting films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), and photoluminescence excitation and emission spectra as well as luminescence decay. The results of XRD showed that a solid solution formed in the YV_xP_1-xO₄:Eu³⁺ film series from x=0 to x=1 with zircon structure. The same structure also held for the GdVO₄:Eu³⁺ film, but the LaVO₄:Eu³⁺ film crystallized with a different structure, monazite. AFM and SEM studies revealed that the phosphor films consisted of spherical particles ranging from 90 to 400 nm depending on the film compositions. With the increase of x values in YV_xP_1-xO₄:Eu³⁺ films, the integrated emission intensity and the red (⁵D₀–⁷F₂)-to-orange (⁵D₀–⁷F₁) intensity ratio of Eu³⁺ increase due to the increased energy-transfer probability from VO₄^3- to Eu³⁺ and the increased polarizability of the surrounding oxygen ions, respectively. The x values also have an influence on the decay behavior of Eu³⁺. The YVO₄:Eu³⁺ and GdVO₄:Eu³⁺ films showed very similar luminescence properties due to their same crystal structures. However, the LaVO₄:Eu³⁺ film exhibited a much different emission property from those of the YVO₄:Eu³⁺ and GdVO₄:Eu³⁺ films due to the structural effects. PACS 73.63.Bd; 78.55.Hx; 78.66.Nk; 81.15.Lm; 81.20.Fw     

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu,Dy thinfilms

SrAl₂O₄:Eu²⁺,Dy³⁺ thin films were grown on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique to investigate the effect of vacuum, oxygen (O₂) and argon (Ar) deposition atmospheres on the structural, morphological, photoluminescence (PL) and cathodoluminescence (CL) properties of the films. The films were ablated using a 248 nm KrF excimer laser. Atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and fluorescence spectrophotometry were used to characterize the thin films. Auger electron spectroscopy (AES) combined with CL spectroscopy were employed for the surface characterization and electron-beam induced degradation of the films. Better PL intensities were obtained from the unannealed films prepared in Ar and O₂ atmospheres with respect to those prepared in vacuum. A stable green emission peak at 515 nm, attributed to 4f⁶5d¹→4f⁷ Eu²⁺ transitions were obtained with less intense peaks at 619 nm, which were attributed to transitions in Eu³⁺. After annealing the films prepared in vacuum at 800 °C for 2 h, the intensity of the green emission (520 nm) of the thin film increased considerably. The amorphous thin film was crystalline after the annealing process. The CL intensity increased under prolonged electron bombardment during the removal of C due to electron stimulated surface chemical reactions (ESSCRs) on the surface of the SrAl₂O₄:Eu²⁺, Dy³⁺ thin films. The CL stabilized and stayed constant thereafter.     

M′型LuTaO_4∶Eu~(3+)透明闪烁厚膜的制备及性能研究

X射线成像在生命科学和物质微结构分析等许多方面有着非常重要的应用,X射线成像仪器核心部件之一为X射线-可见光转换屏。透明闪烁薄膜是实现高空间分辨率X射线成像的一条有效途径。铕掺杂M′型LuTaO_4是一种性能优越的闪烁材料,其密度高达9.75g·cm~(-3),化学性质稳定,辐照硬度大,有望制备成透明薄膜型高空间分辨率X射线转换屏。以2-甲氧基乙醇为溶剂、PVP为胶粘剂,采用溶胶-凝胶法成功制备出M′型LuTaO_4∶Eu~(3+)透明闪烁厚膜,并对透射率、光致发光、X射线激发发射光谱和空间分辨率等一系列的薄膜性能进行表征。经过8次旋涂之后,膜层均匀、无裂纹,厚度为2.1μm,发光波段的透射率为70%以上,成像空间分辨率达到1.5μm。将厚膜作为X射线-可见光转换屏,成功对果蝇进行了X射线成像,其复眼结构清晰可见。此外,紫外和X射线激发下闪烁膜的发光特性研究表明,该厚膜具有优良的发光性能,已基本满足高分辨率X射线成像的要求,有望在显微X射线成像方面获得很好应用。     

Photoluminescence of Y2O3:Eu thin film phosphors by sol-gel deposition and rapid thermal annealing

Y₂O₃:Eu³⁺ phosphor films have been developed by using the sol-gel process. Comprehensive characterization methods such as Photoluminescent (PL) spectroscopy, X-ray diffraction (XRD) and Fourier Transform Infrared (FTIR) spectroscopy were used to characterize the Y₂O₃:Eu³⁺ phosphor films. In this experiment, the XRD profiles show that the Y₂O₃:Eu³⁺ phosphor films crystallization temperature and optimum annealing temperature occur at about 650 and 750 °C, respectively. The optimum dopant concentration is 12 mol% Eu³⁺ and the critical transfer distance (R_c) among Eu³⁺ ions is calculated to be about 0.84 nm. Vacuum environment is more efficient than oxygen and nitrogen to eliminate the OH content and hence yields higher luminescent phosphor films. The PL emission intensity of Y₂O₃:Eu³⁺ phosphor films is also dependent on the annealing time. It was found that the H₂O impurities were effectively eliminated after annealing time of 25 s at 750 °C in vacuum environment. From the experiment results, the schematic energy band diagram of Y₂O₃:Eu³⁺ phosphor films is constructed.     

Cathodoluminescence characteristics of particles and film of (Y, Zn)2O3:Eu phosphor prepared by spray pyrolysis

Eu-doped Y₂O₃ particles with spherical shape and fine size were prepared by spray pyrolysis. The cathodoluminescence of Y₂O₃:Eu³⁺ powder was optimized by substituting small amount of zinc atoms in place of yttrium sites. As a result, the optimized (Y, Zn)₂O₃:Eu³⁺ phosphor showed 60% improved cathodoluminescence compared with Y₂O₃:Eu³⁺ particles. The prepared (Y, Zn)₂O₃:Eu³⁺ phosphor had spherical shape and 0.726 μm in mean size. Using these particles, the thickness of the phosphor film was controlled by varying the phosphor loading. The brightness and luminous efficiency of phosphor films prepared were monitored with varying the accelerating voltage ranges from 4 to 14 kV. The dependency of the luminous efficiency on the accelerating voltage was very sensitive to the phosphor loading. As increasing the accelerating voltage from 4 to 14 kV, the brightness of phosphor films prepared was monotonically increased from 200 to 1085 cd/cm²_, but the saturation in the luminous efficiency appeared at 10 kV. The highest efficiency was achieved when the number of phosphor-particles layer was about 3. More details about the luminous efficiency and brightness were discussed with changing the phosphor loading.     

Formation of the ferroelectric domains in epitaxial PbTiO3 thin films grown by metalorganic chemical vapor deposition

3 thin films have been prepared by metalorganic chemical vapor deposition under reduced pressure. The formation of ferroelectric domains in films grown on SrTiO₃ and LaAlO₃ substrates was investigated by synchrotron radiation and Rutherford backscattering spectroscopy. Single-domain (3000-Å thick) and multi-domain (4500-Å thick) PbTiO₃ films were produced on SrTiO₃. For multi-domain PbTiO₃ film, the c-domain presented epitaxial structure with its c-axis perpendicular to the substrate surface, while a-domains aligned four-fold symmetrically with c-domains by 2.79^° off the c-axis of c-domains. In the film, the measured lattice constants (a, b and c) of the a- and c-domains were different from each other, indicating that the films suffered a modulated strain during domain formation. In contrast, both the a and c domains of films on LaAlO₃ were alternatively aligned on substrate with the a-axis of the a-domain and the c-axis of c-domains perpendicular to the substrate surface. Two-dimensional distribution of these domains is proposed and the formation of these kinds of domains is discussed. The surface morphology and phase transition process of single and multi domain PbTiO₃ film on SrTiO₃ were studied by atomic force microscope (AFM) and high temperature X-ray diffraction, respectively. Received: 15 August 1996/Accepted: 21 January 1997     

The influence of the number of pulses on the morphological and photoluminescence properties of SrAl2O4:Eu,Dy thin films prepared by pulsed laser deposition

The current work reports on the influence of the number of laser pulses on the morphological and photoluminescence properties of SrAl₂O₄:Eu²⁺,Dy³⁺ thin films prepared by the pulsed laser deposition (PLD) technique. Atomic force microscopy (AFM) was used to study the surface topography and morphology of the films. The AFM data showed that the film deposited using a higher number of laser pulses was packed with a uniform layer of coarse grains. In addition, the surface of this film was shown to be relatively rougher than the films deposited at a lower number of pulses. Photoluminescence (PL) data were collected using the Cary Eclipse fluorescence spectrophotometer equipped with a monochromatic xenon lamp. An intense green photoluminescence was observed at 517 nm from the films prepared using a higher number of laser pulses. Consistent with the PL data, the decay time of the film deposited using a higher number of pulses was characteristically longer than those of the other films. The effects of laser pulses on morphology, topography and photoluminescence intensity of the SrAl₂O₄:Eu²⁺,Dy³⁺ thin films are discussed.     

The luminescence enhancement of Eu3+ ion and SnO2 nanocrystal co-doped solben gel SiO2 films

SnO₂ nanocrystal and rare-earth Eu³⁺ ion co-doped SiO₂ thin films are prepared by sol-gel and spin coating methods. The formation of tetragonal rutile structure SnO₂ nanocrystals with a uniform distribution is confirmed by X-ray diffraction and transmission electron microscopy. Fourier transform infrared spectroscopy is used to investigate the densities of the hydroxyl groups, and it is found that the emission intensity from the ⁵D₀-⁷F₂ transitions of the Eu³⁺ ions is enhanced by two orders of magnitude due to energy transfer from the oxygen-vacancy-related defects of the SnO₂ nanocrystals to nearby Eu³⁺ ions. The influences of the amounts of Sn and the post-annealing temperatures are systematically evaluated to further understand the mechanism of energy transfer. The luminescence intensity ratio of Eu³⁺ ions from electric dipole transition and magnetic dipole transition indicate the different probable locations of Eu³⁺ ions in the sol-gel thin film, which are further discussed based on temperature-dependent photoluminescence measurements.     

Synthesis and luminescence properties of YVO4:Eu,Bi phosphor with enhanced photoluminescence by Bi doping

YVO₄:Eu³⁺,Bi³⁺ phosphors have been prepared by the high-temperature solid-state (HT) method and the Pechini-type sol-gel (SG) method. Spherical SiO₂ particles have been further coated with YVO₄:Eu³⁺,Bi³⁺ phosphor layers by the Pechini-type SG process, and it leads to the formation of core-shell structured SiO₂/YVO₄:Eu³⁺,Bi³⁺ phosphors. Therefore, the phase formations, structures, morphologies, and photoluminescence properties of the three types of as-prepared YVO₄:Eu³⁺,Bi³⁺ phosphors were studied in detail. The average diameters for the phosphor particles are 2-4 μm for HT method, 0.1-0.4 μm for SG method, and 0.5 μm for core-shell structured SiO₂/YVO₄:Eu³⁺,Bi³⁺ particles, respectively. Photoluminescence spectra show that effective energy transfer takes place between Bi³⁺ and Eu³⁺ ions in each type of as-prepared YVO₄:Eu³⁺,Bi³⁺ phosphors. Introduction of Bi³⁺ into YVO₄:Eu³⁺ leads to the shift of excitation band to the long-wavelength region, thus the emission intensities of ⁵D₀-⁷F₂ electric dipole transition of Eu³⁺ at 615 nm upon 365 nm excitation increases sharply, which makes this phosphor a suitable red-emitting materials that can be pumped with near-UV light emitting diodes (LEDs).     

The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu,Dy thin films

In this study, SrAl₂O₄:Eu²⁺,Dy³⁺ thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 °C. The structure, morphology and topography of the films were determined by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Photoluminescence (PL) data was collected in air at room temperature using a 325 nm He-Cd laser as an excitation source. The PL spectra of all the films were characterized by green phosphorescent photoluminescence at ∼530 nm. This emission was attributed to 4f⁶5d¹→4f⁷ transition of Eu²⁺. The highest PL intensity was observed from the films deposited at a substrate temperature of 400 °C. The effects of varying substrate temperature on the PL intensity were discussed.     

Crystallinity and morphology dependent luminescence of Li-doped Y2−xGdxO3:Eu thin film phosphors

The influence of lithium doping on the crystallization, the surface morphology, and the luminescent properties of pulsed laser deposited Y_2−xGd_xO₃:Eu³⁺ thin film phosphors was investigated. The crystallinity, the surface morphology, and the photoluminescence (PL) of films depended highly on the Li-doping and the Gd content. The relationship between the crystalline and morphological structures and the luminescent properties was studied, and Li⁺ doping was found to effectively enhance not only the crystallinity but also the luminescent brightness of Y_2−xGd_xO₃:Eu³⁺ thin films. In particular, the incorporation of Li and Gd into the Y₂O₃ lattice could induce remarkable increase in the PL. The highest emission intensity was observed Li-doped Y_1.35Gd_0.6O₃:Eu³⁺ thin films whose brightness was increased by a factor of 4.6 in comparison with that of Li-doped Y₂O₃:Eu³⁺ thin films.     

Improved photoluminescence of pulsed-laser-ablated Y<Subscript>1-x</Subscript>Gd<Subscript>x</Subscript>VO<Subscript>4</Subscript>:Eu<Superscript>3+</Superscript> thin film phosphors by Gd substitution

Gd-substituted Y_1-xGd_xVO₄:Eu³⁺ luminescent thin films have been grown on Al₂O₃(0001) substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, surface morphology, and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from Y_1-xGd_xVO₄:Eu³⁺ films grown under optimized conditions have indicated that the PL brightness is more dependent on the surface roughness than the crystallinity of the films. In particular, the incorporation of Gd into the YVO₄ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with Y_0.57Gd_0.40Eu_0.03VO₄ thin film whose brightness was increased by a factor of 2.5 and 1.9 in comparison with that of YVO₄:Eu³⁺ and GdVO₄:Eu³⁺ films, respectively. This phosphor have application to flat panel displays. PACS 78.20.-e; 78.55.-m; 78.66.-w     

Highly enhanced photoluminescence and X-ray excited luminescence of Li doped Gd2O3:Eu thin films

Transparent Li-doped Gd₂O₃:Eu³⁺ thin-film phosphors were prepared by a modified sol-gel method. The effect of the Li⁺ ions on luminescent properties of the thin film was investigated. The results indicated that incorporation of Li⁺ ions into Gd₂O₃ lattice could result in a remarkable increase on photoluminescence or X-ray excited luminescence, and the strongest emission was observed from Gd_1.84Li_0.08Eu_0.08O_3−δ film, in which the intensity was increased by a factor of 1.9 or 2.3 in comparison with that of Gd_1.92Eu_0.08O₃ film. And it could be achieved the highest intensity for sintering the Gd_1.84Li_0.08Eu_0.08O_3−δ film at 700 °C. Such a temperature is much lower than the typical solid-state reaction temperature for its powder phosphors. This kind of transparent thin-film phosphors may promise for application to micro X-ray imaging system.     

An efficient co-doping of Eu and Er in CaAl2O4 aluminate phosphor

CaAl₂O₄:Eu²⁺ co-doped with varying concentrations of Er³⁺ was prepared by solid-state reaction method. Prepared materials with 1 mol% Eu²⁺ and 2-10 mol% of Er³⁺ were investigated for their photoluminescence properties. Phase, morphology and crystalline structure were investigated by powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Broad band UV-excited luminescence was observed for CaAl₂O₄:Eu²⁺, Er³⁺ in the blue region (λ_max=440 nm) due to transitions from 4f⁶5d¹ to the 4f⁷ configuration of the Eu²⁺ ion. The Er³⁺ ion co-doping generates deep traps, which results in longer decay time for phosphorescence.     

Synthesis and luminescence properties of Eu3+,Bi3+-doped BaWO4 phosphors

BaWO₄:Eu³⁺,Bi³⁺ phosphors have been prepared by the conventional high-temperature solid-state reaction and chemical precipitation. The materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) technologies. When the phosphors are prepared by the high-temperature solidstate reaction, Bi³⁺ doping into BaWO₄:Eu³⁺ can increase the emission intensity of 613 nm. However, maximum emission at about 595 nm was observed in Eu³⁺,Bi³⁺-doped BaWO₄ phosphors prepared by the chemical precipitation. The decay constants (monitored at 595 and/or 613 nm) are within 45–100 s. The color purity of the Ba_0:865WO₄: Eu_0:11,Bi_0:025 phosphor (prepared by chemical precipitation) was 100%. The emission mechanism of Eu³⁺,Bi³⁺ in the BaWO₄ phosphors is briefly discussed.     

Low-temperature wet chemical synthesis and photoluminescence properties of YVO4: Bi, Eu nanophosphors

YVO₄: Bi³⁺, Eu³⁺nanophosphors are prepared by the citrate-assisted low-temperature wet chemical synthesis. When the colloidal solution is aged at 60 °C, the crystalline YVO₄: Bi³⁺, Eu³⁺ nanorods are formed from the amorphous gel precursors, as confirmed by transmission electron microscopy and X-ray diffractometry (XRD). YVO₄: Bi³⁺, Eu³⁺ nanophosphors emit red through energy transfer from Bi³⁺ to Eu³⁺ under near-UV-light excitation. The emission intensity increases with increasing the fraction of the crystalline phase during aging. The excitation peak corresponding to Bi³⁺-V⁵⁺ charge transfer relative to those of O²⁻-V⁵⁺ and O²⁻-Eu³⁺ charge transfers gradually becomes strong until the completion of the crystallization, although the contents of individual Bi³⁺ and Eu³⁺ ions incorporated into YVO₄ keep constant. When the aging is continued after the completion of the crystallization, the content of incorporated Bi³⁺ gradually increases, and hence the emission intensity decreases as a result of the energy migration among Bi³⁺ ions. These results suggest that in addition to the fraction of the crystalline phase and the contents of incorporated Bi³⁺ and Eu³⁺ ions, the local chemical states around Bi³⁺ play significant roles in photoluminescence properties.     

Surface characterization and luminescent properties of SrAl2O4:Eu,Dy nano thin films

SrAl₂O₄:Eu²⁺, Dy³⁺ thin films were grown on Si (1 0 0) substrates in different atmospheres using the pulsed laser deposition (PLD) technique. The effects of vacuum, oxygen (O₂) and argon (Ar) deposition atmospheres on the structural, morphological and photoluminescence (PL) properties of the films were investigated. The films were ablated using a 248 nm KrF excimer laser. Improved PL intensities were obtained from the unannealed films prepared in Ar and O₂ atmospheres compared to those prepared in vacuum. A stable green emission peak at 520 nm, attributed to 4f⁶5d¹→4f⁷ Eu²⁺ transitions was obtained. After annealing the films prepared in vacuum at 800 °C for 2 h, the intensity of the green emission (520 nm) of the thin film increased considerably. The amorphous thin film was crystalline after the annealing process. The diffusion of adventitious C into the nanostructured layers deposited in the Ar and O₂ atmospheres was most probably responsible for the quenching of the PL intensity after annealing.     

共溅射和离子注入制备的SiO2(Eu)薄膜中Eu3+到Eu2+的转变

采用共溅射方法和Eu离子注入热生长的SiO₂方法得到SiO₂(Eu)薄膜,Eu离子的浓度为4%和0.5%.对样品X射线吸收近边结构(XANES)的研究和分析表明,在高温氮气中发生了Eu³⁺向Eu²⁺的转变.SiO₂(Eu)薄膜高温氮气退火下蓝光的发射证明了这一结论 关键词： 2(Eu)薄膜')" href="#">SiO₂(Eu)薄膜 XANES