Diode pumped Nd:Lu<Subscript>0.5</Subscript>Y<Subscript>0.5</Subscript>VO<Subscript>4</Subscript>-LBO red laser at 671 nm

We report a efficient compact red laser at 671 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode pumped Nd:Lu_0.5Y_0.5VO₄ laser on the ⁴ F _3/2-⁴ I _13/2 transition at 1342 nm. An LBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 17.8 W, as high as 2.25 W of continuous wave output power at 671 nm is achieved with 10-mm-long LBO. The optical-to-optical conversion efficiency is up to 12.6%, and the fluctuation of the red output power was better than 3.6% in the given 30 min.     

Passively Q-switched laser operation in a composite Nd:YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript> crystal with a single-walled carbon nanotube saturable absorber

By using a piece of single-walled carbon nanotube saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser has been demonstrated for the first time. The maximum average output power and the shortest pulse width are 1220 mW and 103 ns at the incident pump power of 5.04 W for a 10% transmission of the output coupler. The highest pulse repetition rate of 415.6 kHz and the largest single-pulse energy of 2.94 μJ are also obtained. The composite Nd:YVO₄ crystal has more excellent laser performance than the normal Nd:YVO₄ crystal at 1064 nm.     

Efficient Nd:Y<Subscript>0.36</Subscript>Gd<Subscript>0.64</Subscript>VO<Subscript>4</Subscript>-GdCa<Subscript>4</Subscript>O(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> red laser under diode pumping into the emitting level

We report a red laser at 671 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1342 nm Nd:Y_0.36Gd_0.64VO₄ laser under diode pumping into the emitting level ⁴ F _3/2. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 1.12 W of cw output power at 671 nm is achieved. The optical-to-optical conversion efficiency is up to 6.3%, and the fluctuation of the red output power was better than 3.5% in the given 30 min.     

Diode-pumped Nd<Superscript>3+</Superscript>:YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> laser at 1338 nm

A high-power diode -pumped Nd³⁺:YAl₃(BO₃)₄ (Nd:YAB) laser emitting at 1338 nm is described. At the incident pump power of 9.8 W, as high as 734 mW of continuous-wave (CW) output power at 1338 nm is achieved. The slope efficiency with respect to the incident pump power was 9.0%. To the best of our knowledge, this is the first demonstration of such a laser system. The output power stability over 60 min is better than 2.6%. The laser beam quality M ² factor is 1.21.     

Power scaling of a continuous-wave and passively Q-switched Yb:KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript> laser end-pumped by a high-power diode

The power scaling capacity of a diode end-pumped Yb:KLu(WO₄)₂ laser, operating in the continuous-wave (cw) and passively Q-switched regimes, has been investigated. A cw output power of 11.5 W was achieved with an optical-to-optical efficiency of 41% with respect to the incident pump power, while the slope efficiency amounts to 60%. The passively Q-switchedoperation yielded an average output power of 4.3 W at the fundamental wavelength of 1031.7 nm, and 1.15 W of Raman radiation at 1139.3 nm. The total slope efficiency for Q-switched operation was 40%. The highest pulse energy, duration, and peak power were 170 μJ, 2.2 ns, and 77.3 kW for the fundamental radiation, and 51 μJ, 2.3 ns, and 22.2 kW for the Raman radiation. PACS 42.55.Rz; 42.55.Xi; 42.55.Ye     

Performance comparisons of passively Q-switched intracavity-frequency-doubled Nd:Gd<Subscript>0.19</Subscript>Y<Subscript>0.81</Subscript>VO<Subscript>4</Subscript> and Nd:Gd<Subscript>0.83</Subscript>Y<Subscript>0.17</Subscript>VO<Subscript>4</Subscript> lasers at 671 nm

Performance comparisons of laser-diode pumped passively Q-switched intracavity-frequency-doubled Nd:Gd_0.19Y_0.81VO₄ and Nd:Gd_0.83Y_0.17VO₄ lasers at 671 nm are demonstrated for the first time to our knowledge. KTP crystal is used as the frequency doubling material and V:YAG crystal as the saturable absorber with initial transmission of 89%. The dependences of average output power, pulse width, pulse repetition rate, single-pulse energy and peak power on incident pump power are measured and contrasted. The experimental results show that, Nd:Gd_0.83Y_0.17VO₄ laser has more excellent properties than Nd:Gd_0.19Y_0.81VO₄ laser at 671 nm.     

All-solid-state Nd:Gd<Subscript>0.18</Subscript>Y<Subscript>0.82</Subscript>VO<Subscript>4</Subscript>-LBO green laser at 532 nm

We report a continuous-wave (CW) coherent green radiation at 532 nm by intracavity frequency doubling generation of 1064 nm Nd:Gd_0.18Y_0.82VO₄ laser. With incident pump power of 18.2 W, output power of 1.08 W at 532 nm has been obtained using a 5 mm-long KTP crystal. The optical conversion efficiency was up to 5.9%. At the output power level of 1.08 W, the output stability is better than 5%. The beam quality M² values were equal to 1.26 and 1.12 in X and Y directions, respectively.     

All-solid-state intracavity frequency-doubled Nd:Y<Subscript>0.36</Subscript>Gd<Subscript>0.64</Subscript>VO<Subscript>4</Subscript>-GdCa<Subscript>4</Subscript>O(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> green laser under direct 880 nm pumping

We report a green laser at 532 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1064 nm Nd:Y_0.36Gd_0.64VO₄ laser under in-band diode pumping at 880 nm. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.92 W of CW output power at 532 nm is achieved. The optical-to-optical conversion efficiency is up to 16.4%, and the fluctuation of the green output power was better than 2.5% in the given 30 min.     

Actively mode-locked Tm-Ho:LiYF<Subscript>4</Subscript> and Tm-Ho:BaY<Subscript>2</Subscript>F<Subscript>8</Subscript> lasers

We report on the generation of mode-locking pulse trains with high average output powers from diode-pumped Tm-Ho:LiYF₄ and Tm-Ho:BaY₂F₈ lasers emitting at around 2 μm. The highest output power of 365 mW was obtained with the Tm-Ho:YLF₄ laser, whereas the shortest pulse duration of 120 ps and the widest tunability range of 59 nm was achieved with the Tm-Ho:BaY₂F₈ laser. PACS 42.55.Xi; 42.60.Fc; 42.72.Ai; 42.55.Rz; 42.70.Hj     

CW Nd:LuVO<Subscript>4</Subscript>-GdCa<Subscript>4</Subscript>O(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> red laser under direct 888 nm pumping

We report a red laser at 672 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1343 nm Nd:LuVO₄ laser under in-band diode pumping at 888 nm. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 1.73 W of CW output power at 672 nm is achieved. The optical-to-optical conversion efficiency is up to 9.7%, and the fluctuation of the red output power was better than 3.3% in the given 30 min.     

Efficient intracavity frequency-doubled Nd:YLiF<Subscript>4</Subscript>-LiB<Subscript>3</Subscript>O<Subscript>6</Subscript> red laser emission under diode pumping into the emitting level

We report for the first time (to our knowledge) an efficient compact red laser at 660.5 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode direct pumped Nd:YLiF₄ (Nd:YLF) laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1321 nm. A LiB₃O₆ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 16.2 W, as high as 1.5 W of continuous wave output power at 660.5 nm is achieved with 10-mm-long LBO. The optical-to-optical conversion efficiency is up to 9.3%. Comparative results obtained for the pump with diode laser at 806 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Passively Q-switched GdVO<Subscript>4</Subscript>/Nd:GdVO<Subscript>4</Subscript> laser with Cr<Superscript>4+</Superscript>:YAG saturable absorber under direct 879 nm diode pumping to the emitting level

A passively Q-switched 1.06 μm laser with Cr⁴⁺:YAG saturable absorber by direct 879 nm diode pumping grown-together composite GdVO₄/Nd:GdVO₄ crystal to the emitting level was demonstrated in this paper. The characteristics of pulsed laser were investigated by using two kinds of Cr⁴⁺:YAG crystal with the initial transmissivity of 80 and 90%, respectively. When the T ₀ = 90% Cr⁴⁺:YAG was used, an average output power of 1.59 W was achieved at an incident pump power of 10 W. The pulse width and repetition rate were 64.5 ns and 170 kHz, respectively. The thermal lens effect of laser crystal was analyzed.     

Efficient intracavity second-harmonic generation at 930 nm in a BiB<Subscript>3</Subscript>O<Subscript>6</Subscript> crystal

It is reported that efficient continuous-wave (CW) blue laser generation at 465 nm in a BiB₃O₆ (BiBO) crystal at type-I phase matching direction performed with a diode-pumped Nd³⁺:YAlO₃ (Nd:YAP) laser. With incident pump power of 18.4 W, output power of 823 mW at 465 nm has been obtained using a 10 mm-long BiBO crystal. At the output power level of 823 mW, the output stability is better than 2.3%.     

Eye-safe Raman laser at 1532 nm with BaWO<Subscript>4</Subscript> crystal

A diode-end-pumped actively Q-switched eye-safe intracavity Raman laser at 1532 nm is demonstrated, with Nd:YVO₄ as the laser crystal and BaWO₄ as the Raman crystal. The highest average power of 1.5 W is obtained, with an incident pump of 12 W and a pulse repetition rate of 35 kHz, corresponding to a diode-to-Stokes conversion efficiency of 12.5%.     

Passively Q-switched laser performance of a diode-pump mixed Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> crystal

A diode-pumped passively Q-switched Nd:Lu_0.15Y_0.85VO₄ laser with a GaAs output coupler is demonstrated. By using a mixed crystal Nd:Lu_0.15Y_0.85VO₄ as laser medium, the passively Q-switched laser can generate shorter pulse width with higher peak power in comparison with the passively Q-switched Nd:LuVO₄ or Nd:YVO₄ lasers under the same laser cavity. At the incident pump power 11.9 W, the minimum pulse width of 3.23 ns and the maximum peak power 1.67 kW can be obtained. The average output power and the pulse repetition rate of the laser are also measured. The experimental results show that the mixed crystal is a promising laser medium for shorter Q-switched pulse with higher peak power.     

Diode-pumped Nd:LuVO<Subscript>4</Subscript>-Nd:YVO<Subscript>4</Subscript> laser at 492 nm with intracavity sum-frequency-mixing in LiB<Subscript>3</Subscript>O<Subscript>6</Subscript>

We present for the first time a Nd:YVO₄ laser emitting at 1064 nm intracavity pumped by a 916 nm diode-pumped Nd:LuVO₄ laser. A 809 nm laser diode is used to pump the Nd:LuVO₄ crystal emitting at 916 nm, a Nd:YVO₄ laser crystal was pumped at 916 nm and lased at 1064 nm. Intracavity sum-frequency mixing at 916 and 1064 nm was then realized in a LiB₃O₆ (LBO) crystal to reach the blue range. We obtained a continuous-wave output power of 216 mW at 492 nm under 19.6 W of incident pump power at 809 nm.     

Characteristics of diode-pumped dual-loss-modulated Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser

A diode-pumped dual-loss-modulated Q-switched and mode-locked (QML) Nd:Lu_0.15Y_0.85VO₄ laser with acousto-optic (AO) modulator and Cr⁴⁺:YAG saturable absorber is presented. The stable QML laser pulse with high peak power and complete modulation depth has been obtained. The QML laser characteristics such as the pulse width, single-pulse energy etc. have been measured for different small-signal transmissions (T ₀) of Cr⁴⁺:YAG, different reflectivity (R) of output coupler and modulation frequencies of the AO modulator (f _p ). The results show that the pulse energy increases with decreasing f _p and increasing T ₀, while the pulse width decreases with decreasing f _p and increasing T ₀. At f _p = 10 kHz, R = 90%, and T ₀ = 91%, the highest pulse energy and peak power of mode-locked pulses is obtained.     

Diode-pumped passively Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with a GaAs saturable absorber

By using a-cut Nd:Lu_0.15Y_0.85VO₄ mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of 6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about 275 ps. The experimental results show that Nd:Lu_0.15Y_0.85VO₄ is a promising mixed crystal for QML laser.     

Amplification of a <Emphasis Type="Italic">Q</Emphasis>-Switched Ho:GdVO<Subscript>4</Subscript> Oscillator in Thulium-Doped Large-Mode-Area Fiber

We report a high peak power, narrow linewidth, stable pulsed Ho:GdVO₄ amplifier based on thuliumdoped fiber, which produces 6.65 W average output power at 2,048 nm and 56.8 kW peak power with 11.7 ns pulse width at 10 kHz repetition rate. We use a simple Q-switched Ho:GdVO₄ laser as a seed laser and a thulium-doped fiber pumped by a 792 nm laser diode as an amplifier. The fiber amplifier provided 6.5 dB gain to the input signal. The spectral linewidth of the Ho:GdVO₄ amplifier remains < 0.5 nm with an M² beam quality of 1.36.     

Efficiency intracavity frequency-doubled Nd:Y<Subscript>0.36</Subscript>Gd<Subscript>0.64</Subscript>VO<Subscript>4</Subscript>-LBO green laser at 532 nm with direct pumping

We report an efficient laser emission on the 1064 nm ⁴ F _3/2 to ⁴ I _11/2 transition in mixed vanadate crystal Nd:Y_0.36Gd_0.64VO₄ under the pump with diode laser at 880 nm. Continuous wave (CW) 10.7 W output power at 1064 nm is obtained under 17.8 W of incident pump power; the slope efficiency with respect to the incident pump power was 71.2%. Moreover, intracavity frequency doubling with LiB₃O₅ (LBO) nonlinear crystal yielded 4.6 W of green light at 532 nm. An optical-to-optical efficiency with respect to the incident pump power was 25.8%.