Stratification of Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript> Single Crystals and Sintering of the Obtained Micro- and Nanoscale Plates

The use of surface active liquids facilitates intense stratification of mechanically strained Bi_0.5Sb_1.5Te₃ crystallites. A Bi_0.5Sb_1.5Te₃ heat element with specified thickness and structure is formed by layer-by-layer deposition of “thermoelectric ink” on its free surface. A heat treatment of the formed thermoelectric element in argon at a temperature of 800 K makes it possible to minimize radically the resistance of the grain boundaries introduced into its bulk.     

Anomalous increase of the thermopower and thermoelectric figure of merit in Ga-doped <Emphasis Type="Italic">p</Emphasis>-(Bi<Subscript>0.5</Subscript>Sb<Subscript>0.5</Subscript>)<Subscript>2</Subscript>Te<Subscript>3</Subscript> single crystals

The effect of Ga doping on the temperature dependences (5 K ≤ T ≤ 300 K) of the Seebeck coefficient α, electrical conductivity σ, thermal conductivity coefficient κ, and thermoelectric figure of merit Z of p-(Bi_0.5Sb_0.5)₂Te₃ single crystals has been investigated. It has been shown that, upon Ga doping, the hole concentration decreases, the Seebeck coefficient increases, the electrical conductivity decreases, and the thermoelectric figure of merit increases. The observed variations in the Seebeck coefficient cannot be completely explained by the decrease in the hole concentration and indicate a noticeable variation in the density of states due to the Ga doping.     

Thermal sensors based on Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> and (Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>70</Subscript>(Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>30</Subscript> thin films

Thin films of Sb₂Te₃ and (Sb₂Te₃)₇₀(Bi₂Te₃)₃₀ alloy and have been deposited on precleaned glass substrate by thermal evaporation technique in a vacuum of 2?×?10^?6 Torr. The structural study was carried out by X-ray diffractometer, which shows that the films are polycrystalline in nature. The grain size, microstrain and dislocation density were determined. The Seebeck coefficient was determined as the ratio of the potential difference across the films to the temperature difference. The power factor for the (Sb₂Te₃)₇₀ (Bi₂Te₃)₃₀ and (Sb₂Te₃) is found to be 19.602 and 1.066 of the film of thickness 1,500 Å, respectively. The Van der-Pauw technique was used to measure the Hall coefficient at room temperature. The carrier concentration was calculated and the results were discussed.     

Effect of conditions of preparation on the thermoelectric properties of solid solutions of Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript>

The effect the conditions of preparing thermoelectric solid solutions of Bi_0.5Sb_1.5Te₃ + 0.06 wt % Pb by hardening from the liquid state with subsequent hot pressing have on their thermoelectric properties is studied. It is found that the optimum thermoelectric quality factors are achieved at a 2200–2800 rpm rate of copper disc rotation.     

Effect of heat treatment on the structure and the thermoelectric properties of Sb<Subscript>0.9</Subscript>Bi<Subscript>1.1</Subscript>Te<Subscript>2.9</Subscript>Se<Subscript>0.1</Subscript> thin films and composites based on them

This work considers the effect of vacuum annealing on the thermoelectric properties of Sb_0.9Bi_1.1Te_2.9Se_0.1 thin film and Sb_0.9Bi_1.1Te_2.9Se_0.1–C composites with various carbon contents produced by ion-beam deposition in an argon atmosphere. The electrical resistivity and the thermopower of Sb_0.9Bi_1.1Te_2.9Se_0.1–C nanocomposites are found to be dependent on not only the carbon concentration but also the type and the concentration of intrinsic point defects of the Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution, which determine the type of conductivity of Sb_0.9Bi_1.1Te_2.9Se_0.1 granules. The power factors are estimated for films of Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution and films of Sb_0.9Bi_1.1Te_2.9Se_0.1–C composites and found to have values comparable with the values for nanostructured materials on the basis of (Bi,Sb)₂(Te,Se)₃ solid solutions.     

Effect of the atomic composition of the surface on the electron surface states in topological insulators A<Stack><Subscript>2</Subscript><Superscript>V</Superscript></Stack>B<Stack><Subscript>3</Subscript><Superscript>VI</Superscript></Stack>

The results of the theoretical investigation of the surface electronic structure of A₂^VB₃^VI compounds containing topologically protected surface states are reported. The ideal Bi₂Te₃, Bi₂Se₃, and Sb₂Te₃ surfaces and surfaces with an absent external layer of chalcogen atoms, which were observed experimentally as monolayer terraces, have been considered. It has been shown that the discrepancy between the calculated Fermi level and the value measured in the photoemission experiments can be attributed to the presence of the “dangling bond” states on the surface of the terraces formed by semimetal atoms. The fraction of such terraces on the surface has been estimated.     

Photopyroelectric spectroscopy of Sb<Subscript>2</Subscript>O<Subscript>3</Subscript> - ZnO ceramics

Photopyroelectric spectroscopy is used to study the band-gap energy of the ceramic (ZnO + xSb₂O₃), x = 0.1 - 1.5 mol% and the ceramic (ZnO + 0.4 mol%  Bi₂O₃ + xSb₂O₃), x = 0 - 1.5 mol% sintered at isothermal temperature, 1280 °C, for 1 and 2 hours. The wavelength of incident light, modulated at 9 Hz, is kept in the visible range and the photopyroelectric spectrum with reference to doping level is discussed. The band-gap energy is reduced from 3.2 eV, for pure ZnO, to 2.86, 2.83 eV for the samples without Bi₂O₃at 0.1 mol% of Sb₂O₃ for 1 and 2 hours of sintering time, respectively. It is reduced to 2.83, 2.80 eV for the samples with Bi₂O₃ at 0 mol% of Sb₂O₃ for 1 and 2 hours of sintering time, respectively. The steepness factor σ_A which characterizes the slop of exponential optical absorption is discussed with reference to the doping level. The phase constitution is determined by XRD analysis; microstructure and compositional analysis of the selected areas are analyzed using SEM and EDX.     

Influence of silver on the galvanomagnetic properties and energy spectrum of mixed (Bi1− x Sbx)2Te3 crystals

An investigation is made of the temperature dependences of the resistivity in the range 4.2–300 K, the Hall effect, and the Shubnikov-de Haas effect in magnetic fields up to 40 T in (Bi_{1? x} Sb_x)₂Te₃Ag_y single crystals (0 ≤ x ≤ 0.75). Doping (Bi_{1? x} Sb_x)₂Te₃ crystals with silver showed that in Sb₂Te₃ and (Bi_{1? x} Sb_x)₂Te₃ crystals unlike Bi₂Te₃ silver exhibits acceptor properties. The angular and concentration dependences of the Shubnikov-de Haas effect were studied in (Bi_{1? x} Sb_x)₂Te₃Ag_y. It was established that the anisotropy of the ellipsoids of the upper valence band in Bi_0.5Sb_1.5Te₃ remains unchanged as a result of silver doping.     

Band structure and dominating electron-scattering mechanisms in Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis>−<Emphasis Type="Italic">y</Emphasis></Subscript>Mn<Subscript>x</Subscript>Fe<Subscript>y</Subscript>Se

Magnetic and kinetic properties as well as transmission and absorption spectra of Hg _1−x−y Mn _x Fe _ySe (0.09 ≤ x ≤ 0.099 and 0.001 ≤ y ≤ 0.01) crystals are investigated at H ≈ 0.5–6 kOe in the temperature range T = 77–300 K. The band parameters are determined on the basis of experimental data. It is found that in the crystals under study at T ≈ 300 K, electron scattering by polar optical phonons dominates, direct optical band-to-band transitions occur, and replacement of a part of Mn atoms by Fe for x + y = 0.1 results in an increase in E_g ^op with Fe content. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 35–39, March, 2007.     

Effect of thermal treatment on the thermoelectric properties of Sb<Subscript>0.9</Subscript>Bi<Subscript>1.1</Subscript>Te<Subscript>2.9</Subscript>Se<Subscript>0.1</Subscript> solid solution thin films

The effect thermal treatment in a vacuum has on the thermoelectric properties of Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution thin films obtained via ion-beam sputtering in an argon atmosphere is considered. It is established that the specific resistance and thermopower are determined by the type and concentration of intrinsic point defects of the Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution. The power factor values are found to be comparable to those of nanostructured materials based on (Bi,Sb)₂(Te,Se)₃ solid solutions.     

Formation of ceramic solid solutions in a SrTiO<Subscript>3</Subscript>-BiScO<Subscript>3</Subscript> system

X-ray structural, X-ray phase, and dilatometric analyses were used to explore specific features of the formation of solid solutions in the (1 − x)SrTiO₃−xBiScO₃ system with x = 0.0, 0.1, 0.2, 0.3, 0.4, and 0.5. It was found that the synthesis of solid solutions from the initial Bi₂O₃, Sc₂O₃, TiO₂, and SrCO₃ components is accompanied by a considerable increase in the linear dimensions of the samples, depending on their composition. Solid solutions with x > 0.1 are formed through intermediate phases (Sr₅Bi₆O₁₄ at x = 0.2; Sr_0.78Bi_2.22O₄ at x = 0.3; and Sr_2.25Bi_6.75O_12.38 at x = 0.4 and 0.5). It was shown that the samples with x = 0.2, 0.3, 0.4, and 0.5 have two phases: one with a cubic Pm3m structure and one with a tetragonal I4/mcm structure.     

Physical properties,crystal and magnetic structure of layered Fe<Subscript>1.11</Subscript>Te<Subscript>1-</Subscript><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> superconductors

The physical and structural properties of Fe_1.11Te and Fe_1.11Te_0.5Se_0.5 have been investigated by means of X-ray and neutron diffraction as well as physical property measurements. For the Fe_1.11Te compound, the structure distortion from a tetragonal to monoclinic phase takes place at 64 K accompanied with the onset of antiferromagnetic order upon cooling. The magnetic structure of the monoclinic phase was confirmed to be of antiferromagnetic configuration with a propagation vector k = (1/2, 0, 1/2) based on Rietveld refinement of neutron powder diffraction data. The structural/magnetic transitions are also clearly visible in magnetic, electronic and thermodynamic measurements. For superconducting Fe_1.11Te_0.5Se_0.5 compound, the superconducting transition with T _c = 13.4 K is observed in the resistivity and ac susceptibility measurements. The upper critical field H _c2 is obtained by measuring the resistivity under different magnetic fields. The Kim’s critical state model is adopted to analyze the temperature dependence of the ac susceptibility and the intergranular critical current density is calculated as a function of both field amplitude and temperature. Neutron diffraction results show that Fe_1.11Te_0.5Se_0.5 crystalizes in tetragonal structure at 300 K as in the parent compound Fe_1.11Te and no structural distortion is detected upon cooling to 2 K. However an anisotropic thermal expansion anomaly is observed around 100 K.     

Fermi surface and thermoelectric power of (Bi1−x Sbx)2Te3<Ag, Sn> mixed crystals

The Fermi surface anisotropy of (Bi_1?x Sb_x)₂Te₃ single crystals (0.25 ≤ x ≤ 1) was studied by analyzing the angular dependence of the frequency of Shubnikov-de Haas oscillations and the effect of tin and silver doping on the thermoelectric power in these crystals in the temperature range 77 ≤ T ≤ 300 K. It was shown that silver doping of (Bi_1?x Sb_x)₂Te₃ mixed crystals produces acceptors, while silver in Bi₂Te₃ acts as a donor. Tin also exhibits acceptor properties. Both tin and silver doping of p-(Bi_1?x Sb_x)₂Te₃ mixed crystals decrease the thermoelectric power due to an increase in the hole concentration.     

Electrodeposition of BixSb2−xTey thermoelectric thin films from nitric acid and hydrochloric acid systems

The electrochemical behaviors of Bi^III, Te^IV and Sb^III single ions and their mixtures were investigated in nitric acid and hydrochloric acid system separately. Based on which, Bi_xSb_2−xTe_y thermoelectric films were prepared by potentiostatic electrodeposition from the solutions with different concentrations of Bi^III, Te^IV and Sb^III in the two acid systems. The morphologies, compositions, structures, Seebeck coefficients and resistivities of the deposited thin films were characterized and compared by ESEM (or FESEM), EDS, XRD, Seebeck coefficient measurement system and four-probe resistivity measuring device respectively. The results show that although Bi_xSb_2−xTe_y thermoelectric thin film which structure is consistent with the standard pattern of Bi_0.5Sb_1.5Te₃ can be gained in both of the two acid solutions by adjusting the deposition potential, their morphologies and thermoelectric properties have big differences in different acid solutions.     

Optical and Photoelectric Properties of CuGa<Subscript>5</Subscript>Te<Subscript>8</Subscript> Single Crystals and In/<Emphasis Type="Italic">p</Emphasis>-CuGa<Subscript>5</Subscript>Te<Subscript>8</Subscript> Structures

The transmission spectra of CuGa₅Te₈ single crystals grown by the Bridgman method at temperatures of 10–300 K have been measured in the region of their intrinsic absorption edge. The energy-gap width of CuGa₅Te₈ single crystals has been determined, and its temperature dependence has been constructed. Photosensitive, surface-barrier In/p-CuGa₅Te₈ structures were formed for the first time on the basis of the indicated single crystals, and their photoelectric properties were investigated. It is shown that these structures can be used as broad-range photodetectors of natural radiation. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 4, pp. 514–518, July–August, 2005.     

Band gap and type of optical transitions at the interband absorption edge in solid solutions based on bismuth telluride

The spectra of optical absorption in multicomponent n- and p-type solid solutions based on bismuth and antimony chalcogenides with substitutions in both sublattices of Bi₂Te₃ have been investigated. It has been found that, in all the solid solutions studied, just as in the parent compound Bi₂Te₃, direct allowed transitions occur at the interband absorption edge at T = 300 K. The band gap E _g in the n-Bi_{2 ? x} Sb _x Te_{3 ? y ? z} Se _y S _z solid solutions weakly increases with increasing number of substituted atoms in the Bi and Te sublattices. These atomic substitutions do not leads to an increase in E _g as compared to that of the n-Bi₂Te_2.7Se_0.3 composition. An analysis of the optical absorption spectra suggests that the solid solutions under consideration are weakly degenerate, a conclusion supported by the earlier studies of the thermoelectric and galvanomagnetic properties. It has been established that, in the conduction band of the Bi_1.8Sb_0.2Te_2.7Se_0.15S_0.15 solid solution, there is an additional extremum lying above the main extremum at a distance no more than 0.1 eV.     

Solid state synthesis of nonstoichiometric Bi<Subscript>2</Subscript>WO<Subscript>6</Subscript>/Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> composites as visible-light photocatalyst

Nonstoichiometric Bi₂WO₆ photocatalyst with the composition of Bi_2?+?x WO_6?+?1.5x (?0.25 ≤ x ≤ 1) wa synthesized by a facile solid state reaction method. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-vis absorption spectrum. The Bi_2.5WO_6.75 photocatalyst showed excellent visible-light-driven photocatalytic performance; nearly 100 % of RhB (10 ppm, pH?=?3?~?4) was decomposed within 25 min, which demonstrated that nonstoichiometric semiconductors could be an efficient visible-light-driven photocatalyst.     

Magnetic Resonance Study of the Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> Doped with Manganese

Crystals of 3D topological insulators, bismuth telluride Bi₂Te₃, doped with manganese were studied using electron spin resonance (ESR) spectroscopy together with the SQUID magnetometry, transport measurements, and X-ray characterization. The obtained ESR data, such as the temperature and the angular dependence of the resonance field, reveal the specific critical behavior and confirm the ferromagnetic ordering of Mn spins even at modest doping. In addition to the studies of the critical behavior of diluted ferromagnet Bi_2?x Mn _x Te_3, we also discuss the effects of the limited solubility of Mn ions giving rise to microscopic inclusions of the spurious magnetic phases which were revealed using ESR technique.     

Optical absorption in layered MnGaInS<Subscript>4</Subscript> single crystals

Optical absorption in MnGaInS₄ single crystals has been studied. Direct and indirect optical transitions are found to occur in the range of photon energies of 2.37–2.74 eV and in the temperature range of 83–270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E _gd and E _gi are −5.06 × 10⁻⁴ and −5.35 × 10⁻⁴ eV/K, respectively. MnGaInS4 single crystals exhibit anisotropy in polarized light at the absorption edge; the nature of this anisotropy is explained.     

Suppression of intrinsic conduction in <Emphasis Type="Italic">p</Emphasis>-Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript> under plastic deformation

The effect of suppression of intrinsic conduction in the narrow-band-gap p-Bi_0.5Sb_1.5Te₃ semiconductor subjected to plastic deformation is revealed. The effect consists in slowing down the decrease in the thermopower coefficient at high temperatures due to intrinsic conduction. The observed effect can be caused by an enhancement of the misorientation of crystal grains or by the formation of linear structural defects (dislocations, microcracks), which are responsible for the decrease in the mobility of predominantly minority charge carriers.