Ultrathin (CoFe/Pt)n multilayers with tuned magnetic properties

Perpendicular magnetic anisotropy (PMA) has been investigated in ultrathin (CoFe [0.2] nm/Pt [0.2] nm)_n multilayers. The Pt layers show an fcc crystal structure with a preferred [111] orientation. The multilayers with n=3, 4 show PMA in the as-grown state, which can be enhanced by thermal annealing. However, no PMA is observed in the as-grown state with higher repetitions (n>&=5), although it is observed after thermal annealing. For 1=&<n=&<8, the anisotropy energy is around 10⁵ J/m³ for all (CoFe [0.2]/Pt [0.2])_n stacks. The perpendicular anisotropy is related to layer thickness and interface roughness.     

Interlayer coupling between out-of-plane magnetized multilayers across a thin antiferromagnetic spacer

The interlayer exchange coupling between Co/Pt perpendicular-to-plane magnetized layers across a thin IrMn spacer layer was experimentally studied. In contrast to earlier studies on interlayer coupling through antiferromagnetic NiO, which revealed an oscillatory coupling behavior as a function of NiO thickness, a ferromagnetic coupling was observed here in the range of IrMn thickness between 0.6 and 1.5 nm and antiferromagnetic between 1.5 and 2.5 nm. The antiferromagnetic coupling is attributed to an orange peel magnetostatic mechanism whereas the ferromagnetic coupling is attributed to an out-of-plane polarization of the antiferromagnetic IrMn layer induced by the interfacial exchange interaction with the adjacent out-of-plane ferromagnetic layers. Measurements of hysteresis loops versus temperature show that the coupling vanishes at 510 K for t_IrMn=1 nm. This critical temperature is far below the Néel temperature of bulk IrMn, but above the blocking temperature of IrMn/Co bilayers at such thickness. Using a one-dimensional model describing a partial domain wall in the antiferromagnet, we explain the coupling in terms of an out-of-plane tilt of the Mn moments at the IrMn/(Co/Pt) interfaces yielding a weak net polarization of the IrMn. Finally, the non-oscillatory decay of the coupling was attributed to the compensated spin structure of the IrMn in the parallel to the interfaces.     

Influence of Ga+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates.It investigates the thermal relaxations of both non-irradiated and Ga + ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field.The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ga + ion irradiated CoFe/IrMn bilayers.Exchange bias field is also found to be smaller upon irradiation at higher ion dose.This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.     

Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer

This paper reports that a CoFe/IrMn bilayer was deposited by high vacuum magnetron sputtering on silicon wafer substrate; the thermal relaxation of the CoFe/IrMn bilayer is investigated by means of holding the film in a negative saturation field at various temperatures. The exchange bias decreases with increasing period of time while holding the film in a negative saturation field at a given temperature. Increasing the temperature accelerates the decrease of exchange field. The results can be explained by the quantitative model of the nucleation and growth of antiferromagnetic domains suggested by Xi H W et al. [2007 Phys. Rev. B 75 014434], and it is believed that two energy barriers exist in the investigated temperature range.     

Structure of PtFe/Fe double-period multilayers investigated by X-ray diffraction, reflectivity, diffuse scattering and TEM

Double-period [(Pt 1.7 nm/Fe 0.9 nm)₅Fe(t_Fe2)]₈ and [(Pt 1.8 nm/Fe 0.6 nm)₅Fe(t_Fe2)]₈ multilayers with different thickness t_Fe2 (between 0.23 and 4.32 nm) of the additional Fe layers, prepared by combinatorial sputter deposition, show differences in the mosaic spread and the vertical interfacial roughness when deposited on native or thermally oxidised Si wafers. Simulations of the wide-angle X-ray scattering intensities revealed the presence of interdiffusion in the (Pt/Fe)₅ bilayers and systematic variations of the grain sizes, perpendicular to the film surface, as well as the rms variations of the two superlattice periods with the total film thickness. A comparison of ω-rocking scans shows an increase of the correlated vertical roughness of the (Pt/Fe)₅ multilayers with the total multilayer thickness.     

Interface characterization of a [Pt/Co)]3/IrMn multilayer by laser-assisted tomographic atom probe

A sputtered Ta_3 nm/[[Pt_2 nm/Co_0.4 nm)]₃/IrMn_7 nm]₇/Pt_10 nm multilayer has been analyzed by laser-assisted tomographic atom probe, allowing to perform three-dimensional reconstructions of the layers and to determine their chemical composition at the atomic scale. From the concentration profiles, we show that the Co layer in contact with IrMn is strongly mixed. The Co/IrMn and IrMn/Pt interfaces are thus non-symmetric, the Co/IrMn interface being more diffuse than the IrMn/Pt one. This study demonstrates that the LATAP technique is extremely well suited for atomic scale structural and chemical characterizations of magnetic multilayers in relationship with their magnetic properties.     

Large spontaneous Hall angle in [Co,CoFe/Pt] multilayer

We have quantitatively investigated the Hall effect in [Co, CoFe/Pt] multilayer films. The [Co, CoFe/Pt] multilayers exhibit large spontaneous Hall resistivity (ρ_H) and Hall angle (ρ_H/ρ). Even though the Hall resistivity in [Co, CoFe/Pt] multilayer films (2.7–4 × 10⁻⁷ Ω cm) is smaller than that of amorphous RE–TM alloy films which show large spontaneous Hall resistivity (<2 × 10⁻⁶ Ω cm), the Hall angle of multilayer (6–8%) is almost twice than that in amorphous rare earth–transition metal alloy films (∼3%). The Hall angle provides evidence of the effects of the exchange interaction of the Hall scattering. The exchange is between conduction electron spins and the localized spins of the transition metal. The large Hall angle of [Co, CoFe/Pt] multilayer can be considered due to the high spin polarization and high Curie temperature of Co and CoFe transition metal layers. Even though the role of interfaces and surfaces in the magnetic properties of multilayer films may dominate that of the bulk, the Hall effects in [Co, CoFe/Pt] multilayer may be mainly dominated by the bulk effect.     

Effect of Ta buffer and NiFe seed layers on pulsed-DC magnetron sputtered Ir20Mn80/Co90Fe10 exchange bias

A systematic investigation has been done on the correlation between texture, grain size evolution and magnetic properties in Ta/Ni₈₁Fe₁₉/Ir₂₀Mn₈₀/Co₉₀Fe₁₀/Ta exchange bias in dependence of Ta buffer and NiFe seed layer thickness in the range of 2-10 nm, deposited by pulsed DC magnetron sputtering technique. A strong dependence of 〈1 1 1〉 texture on the Ta/NiFe thicknesses was found, where the reducing and increasing texture was correlated with exchange bias field and unidirectional anisotropy energy constant at both NiFe/IrMn and IrMn/CoFe interfaces. However, a direct correlation between average grain size in IrMn and H_ex and H_c was not observed. L1₂ phase IrMn₃ could be formed by thickness optimization of Ta/NiFe layers by deposition at room temperature, for which the maximum exchange coupling parameters were achieved. We conclude finally that the coercivity is mainly influenced by texture induced interfacial effects at NiFe/IrMn/CoFe interfaces developing with Ta/NiFe thicknesses.     

Inverse TMR in a nominally symmetric CoFe/AlOx/CoFe junction induced by interfacial Fe3O4 investigated by STEM-EELS

We have found inverse tunneling magnetoresistance (TMR) with a non-symmetric bias voltage dependence in a nominally symmetric Si (001)/Ag/CoFe/AlO_x/CoFe/IrMn/Ag magnetic tunnel junction after field cooling. The O K edge fine structure extracted from electron energy loss spectroscopy spectrum images taken at the interfaces of junctions with inverse TMR shows a thin, discontinuous Fe₃O₄ layer at the CoFe/AlO_x interfaces. The Fe L_2,3 edge core level shifts are also consistent with those of Fe₃O₄. We find no Fe₃O₄ layer in junctions with normal TMR. We believe this Fe₃O₄ layer is responsible for the inverse TMR.     

Oscillatory ferromagnetic interlayer coupling in [Pt(5 Å)/Co(4 Å)]3/Cr(x Å)/[Co(4 Å)/Pt(12 Å)]3 multilayers with perpendicular anisotropy

Investigation has been performed on the interlayer coupling between two Co/Pt multilayers with perpendicular anisotropy separated by Cr spacers. As a function of the Cr spacer thickness, only ferromagnetic interlayer coupling has been observed between the two Co/Pt multilayers in contrast to the oscillatory interlayer coupling between ferromagnetic and antiferromagnetic observed in ferromagnetic layers with in-plane anisotropy separated by Cr spacers. It is the strength of the ferromagnetic interlayer coupling that has been observed to be oscillatory as a function of the Cr spacer thickness with a period of about 7 Å.     

Synthetic Co50Pt50/Ru/CoFe hard–soft trilayer in spin valves

The influence of deposition power and seedlayer on the properties of hard magnet Co₅₀Pt₅₀ was studied. Co₅₀Pt₅₀(/Co₉₀Fe₁₀)/Ru/Co₉₀Fe₁₀ trilayer was used as pining/pinned layer in spin valves. The influences of different hard layer, soft layer and free layer on exchange bias, interlayer coupling, and magnetoresistance (MR) ratio were studied. Weak antiferromagnetic interlayer coupling was obtained by adjusting the thickness of hard and soft layers. MR of a spin valve with structure Cr2/CoFe0.5/CoPt4/CoFe0.5/Ru0.8/CoFe2.2/Cu2.05/CoFe2.6/Cu1.1/Ta1 reached 10.68% (unit in nm), which is comparable to those of IrMn-based synthetic spin valves. The increment of the coercivity of the free layer is mainly due to the static magnetic interaction between the hard layer and the free layer.     

Effects of Cu dilution in IrMn on the exchange bias of CoFe/IrMn bilayers

The effect of nonmagnetic dilution in metallic antiferromagnets (AFMs) on the exchange bias (EB) has been investigated from a structural, magnetic, and Monte Carlo simulation point of view in bilayers of CoFe/(IrMn)1-xCux. Dilution by Cu atoms throughout the volume of the AFM IrMn gives rise to an enhanced EB field (HEB) for 5 K相似文献   

Superlattice CoCrPt/Ru/CoFe structure fabricated by pulsed laser deposition

The synthetic antiferromagnets (SAF) have been used in spin-valve sensor in data storage industry [1]. We report a new hard/Ru/soft sandwich structure (SHBL) fabricated by pulsed lased deposition to replace current single layer structure for information recording application. SHBL consists of two magnetic layers separated by thin nonmagnetic layers, typically with Ru layers of 0.7-1.2 nm, through which antiferromagnetic coupling is induced. Varying the relative thickness of the magnetic layers, the spacer layers, and the type of magnetic materials can alter magnetic properties of CoCrPt/Ru/CoFe superlattice. The coercivity H_c and grain size of magnetic layer is also dependent on the laser fluence. High laser fluence results in both small grain size and high H_c. The observed phenomena are related to high quenching and deposition rates during PLD at high fluence, resulting in more pronounced phase segregation.     

Magnetization reversal in perpendicular exchange-biased multilayers

Co/Pt multilayers with perpendicular magnetic anisotropy exhibit an exchange bias when covered with an IrMn layer. The exchange bias field, which is about 7 mT for 3 Co/Pt bilayer repetitions and a Co layer thickness of 5 Å, can be increased up to 16.5 mT by the insertion of a thin Pt layer at the Co/IrMn interface. The interfacial magnetic anisotropy of the Co/IrMn interface (KSCo/IrMn =-0.09 mJ/m2) favours in-plane magnetization and tends to tilt the Co spins away from the film normal. Dynamical measurements of the magnetization reversal process reveal that both thermally activated spin reversal in the IrMn layer and domain wall nucleation in the Co/Pt multilayer influence the interfacial spin structure and therefore the strength of the perpendicular exchange bias field.     

基于IrMn/Fe/Pt交换偏置结构的无场自旋太赫兹源

与目前商用的太赫兹源相比,自旋太赫兹源具有超宽频谱、固态稳定以及成本低廉等优点,这使其成为下一代太赫兹源的主要研究焦点.但使用自旋太赫兹源时,通常需要外加磁场使铁磁层的磁化强度饱和,才能产生太赫兹波,这制约了其应用前景.基于此,本文制备了一种基于Ir Mn/Fe/Pt交换偏置结构的自旋太赫兹波发生器,通过Ir Mn/Fe中的交换偏置场和Fe/Pt中的超快自旋流注入与逆自旋霍尔效应相结合,在无外加磁场下产生了强度可观的太赫兹波.在Ir Mn和Fe的界面中插入超薄的Cu,可以使Fe在厚度很薄时零场下实现饱和磁化,并且其正向饱和场最高可达–10 m T,从而进一步提升无场下的太赫兹发射效率.零场下出射的太赫兹波的动态范围超过60 d B,达到可实用化的水平.通过旋转样品,发现产生的太赫兹波的偏振方向也会随之旋转,并且始终沿着面内垂直于交换偏置场的方向.此外,在此交换偏置结构的基础上,引入了一层自由的铁磁金属层Fe,设计了一种以Ir Mn/Fe/Pt/Fe为核心结构的自旋阀太赫兹源,发现产生的太赫兹强度在两层铁磁层反平行排列时比平行排列以及不引入自由铁磁金属层时均大约提升了40%.结果表明,基...     

Magnetization reversal and domains structures in (Co/Ni/Co/Pt) multilayers

Multilayers of [Co/Ni(t_Ni)/Co/Pt]_×4 are investigated for different Ni insertion layer thicknesses. The resulting magnetic properties and magnetic domain structures are compared with [Co/Ni]_×8 multilayers. As determined by magneto-optical Kerr effect microscopy and a vibrating sample magnetometer measurements, all multilayers exhibited a perpendicular magnetic anisotropy. It is found that the nucleation field and magnetic coercivity of [Co/Ni(t)/Co/Pt]_×4 multilayers are lower than (Co/Ni)_×8 and decreased with Ni thickness. Magnetization decay measurements reveal that these multilayers did not show an exponential decay behavior as was observed in rare earth transition metal alloys. Very narrow wires will remain stables for several hours even with an applied magnetic field closer to the coercivity. Insertion of very thin Ni in (Co/Pt) multilayers offers a good way to optimize the magnetic properties of the material and adjust the domain size for nanowire-based devices.     

Thickness dependence of exchange anisotropy in NiFe/IrMn bilayers studied by Planar Hall Effect

Planar Hall Effect (PHE) in NiFe(t)/IrMn(10.0 nm) thin film structures has been experimentally investigated as a function of NiFe thickness in the range from 3 to 20 nm, under the applied magnetic field perpendicular to the easy axis. The PHE voltage change and its field sensitivity increase with NiFe thickness, but the field interval of two voltage maxima decreases with the thickness. There are good agreements between measured and calculated PHE voltage profiles, where the parameters of exchange-biased and effective anisotropy fields have been characterized to decrease with NiFe thickness. However, an anisotropic resistivity change increases as the NiFe thickness increases. These analyses suggest that PHE is the effective method, inferred to single domain, to determine the electrical and magnetic parameters in magnetic devices.     

IrMn基反铁磁自旋阀的巨磁电阻效应

用第一性原理方法研究了在微观尺度具有三重对称磁结构的IrMn合金的反铁磁自旋阀(AFSV)的电子输运.研究表明:基于有序L1₂相IrMn合金的Co/Cu/IrMn自旋阀的巨磁电阻(GMR)效应具有三重对称性,可以利用这一特性区分反铁磁材料的GMR与传统铁磁材料的GMR.基于无序γ相IrMn合金的IrMn(0.84 nm)/Cu(0.42 nm)/IrMn(0.42 nm)/Cu(0.42 nm)(111) AFSV的电流平行平面构型的GMR约为7.7％,大约是电流垂直平面构型的GMR(3.4％)的两倍,明显大于实验中观测到的基于共线磁结构的FeMn基AFSV的GMR. 关键词： 反铁磁自旋阀 巨磁电阻效应 非共线磁结构 电流平行平面结构