Tb3+掺杂硅酸盐闪烁玻璃对硬X射线的能量响应

采用高温熔融法制备了Tb3+掺杂硅酸盐闪烁玻璃,并测量了该闪烁玻璃对5～80 keV硬X射线的能量响应.结果表明:硅酸盐闪烁玻璃的光电流对不同光子能量X射线的响应是非线性的,尤其在8和50keV附近,其非线性变化较明显,这种现象与闪烁玻璃吸收X射线后产生大量光电子及其对电子的能量响应有关系.在73.38 keV处,硅酸...     

脉冲X射线辐射效应时间能量联合数值模拟

在脉冲X射线辐射效应研究中,需要将时间维度信息结合到仿真模型中,进而实现基于时间能量联合方法的辐射效应数值模拟,同时也为瞬态脉冲辐照效应的仿真提供了一种思路。建立轫致辐射打靶模型,计算出射脉冲X射线能谱,得到脉冲X射线的时间能量联合谱,结合辐射对象的辐射效应仿真模型,获得氧化铝陶瓷试样在不同时间及不同入射深度处的能量沉积。     

化学气相沉积金刚石探测器测量辐射驱动内爆的硬X射线

金刚石探测器具有响应快、灵敏度高、动态范围大、平响应、击穿电压高、抗辐射等优点, 广泛运用于X射线测量. 利用化学气相沉积方法制备的光学级金刚石, 采用金属-金刚石-金属结构研制了X射线金刚石探测器. 在8ps激光器上的探测器响应性能考核表明, 整个探测器系统的响应时间为444 ps, 上升时间为175 ps, 载流子寿命为285 ps. 将探测器应用于神光Ⅲ原型装置的内爆物理实验硬X射线测量, 分别测量得到以注入黑腔的激光转化为主和靶丸内爆产生为主的硬X射线能流, 测得的峰值信号分别正比于激光总能量和反比于靶丸CH层厚度. 关键词： CVD金刚石探测器 硬X射线 激光能量     

晶体X射线衍射的发现及其深远影响

1912年4月,弗里德里希、克里平和劳厄成功地观察到X射线透过硫酸铜晶体后的衍射斑点！随后劳厄推导出描述晶体衍射的著名劳厄方程.由于晶体X射线衍射的发现,劳厄于1914年荣获诺贝尔物理学奖.1912年10月, W.L.布拉格通过X射线透射ZnS晶体实验,推导出了著名的布拉格方程.1915年布拉格父子荣获诺贝尔物理学奖.晶体X射线衍射的发现对自然科学的影响是深远的.2012年是劳厄发现晶体X射线衍射100年,文章回忆了这段光辉的历史及其对科学技术所产生的深远影响,以怀念科学先驱们对科学技术的贡献,弘扬他们对科学研究的认真严谨的科学态度、勇于创新的科学精神和谦逊无私的品德.     

硬X射线透射晶体谱仪的设计性能参数

激光等离子体相互作用高分辨硬X射线光谱的测量通常采用柱面透射弯晶谱仪实现。利用几何光学模型对柱面透射弯晶谱仪的关键技术参数进行了理论计算和数值模拟,给出了谱仪弯晶曲率半径、光源到晶体的距离、光源尺寸和探测器的位置等因素对谱仪测谱范围和分辨能力的影响情况,分析了光谱分辨水平随能点的变化。分析结果表明：晶体曲率半径对测谱范围和谱分辨能力影响大,在光源尺寸较小时,随着探测器与罗兰圆距离的增加,谱线之间距离增加的速度大于光谱线宽增加的速度,使得分辨能力增加。     

硬X射线透射晶体谱仪的设计性能参数

激光等离子体相互作用高分辨硬X射线光谱的测量通常采用柱面透射弯晶谱仪实现。利用几何光学模型对柱面透射弯晶谱仪的关键技术参数进行了理论计算和数值模拟,给出了谱仪弯晶曲率半径、光源到晶体的距离、光源尺寸和探测器的位置等因素对谱仪测谱范围和分辨能力的影响情况,分析了光谱分辨水平随能点的变化。分析结果表明:晶体曲率半径对测谱范围和谱分辨能力影响大,在光源尺寸较小时,随着探测器与罗兰圆距离的增加,谱线之间距离增加的速度大于光谱线宽增加的速度,使得分辨能力增加。     

ZnO半导体电导型X射线探测器件研究

本文制备了基于ZnO纳米线阵列和ZnO薄膜的Ag-ZnO-Ag电导型X射线探测器件,研究了它们对X射线的响应特性.薄膜器件在100 V偏置时的响应度达到0.12μC/Gy,纳米线阵列器件在50 V偏压下的响应度达到0.17μC/Gy.器件工作机理研究表明,器件的响应过程与表面氧吸附与解吸附效应有关,氧气吸附与解吸附过程使得X射线辐照下的载流子寿命大幅度增加,从而使得器件对X射线具有较高的响应度.本文研究结果表明ZnO薄膜和纳米线阵列器件在X射线剂量测量领域具有应用前景.     

硬X射线位相衬度成象

常规X射线成象技术是建立在吸收衬度和几何光学基础上.介绍了“in-line”位相衬度成象 技术和成象理论.以生物样品为例,说明常规X射线吸收衬底成象与位相衬度成象的差别,并 对X射线源尺寸对成象衬度的影响进行了研究.此外,对吸收衬底象和位相衬度象的关键参量 进行了计算模拟和讨论. 关键词： 位相衬度 成象 硬X射线     

简单磁镜上ECR放电硬X射线测量

本文用Nal(T1)晶体闪烁探测器在简单磁镜上测量了硬X射线波形随有关放电参数的变化和能谱,给出了实验数据处理方法、热电子的温度和能量,最后对结果进行了分析讨论。     

HL-1装置硬X射线能谱及长脉冲放电与硬X射线的发射关系

在HL-1装置上初步测硬(?)射线能谱,能量达5MeV。实验观测到长脉冲放电与硬(?)射线的关系,并得到逃逸电子的径向扩散。     

Properties study of ZnO:Ga crystal on pulsed radiation detections

In this paper, properties on pulsed radiation detections of ZnO:Ga crystal grew by a magnetron sputtering method were studied. The time response to pulsed laser,pulsed hard X rays and single α particles, the energy response to pulsed hard X ray, the scintillation efficiency to γ rays, the response to pulsed proton, and the relations of the light intensity varied with the proton energy were measured and analyzed in detail. Results show that the ZnO:Ga crystal has potential applications in the regime of pulse radiation detection .     

Properties study of ZnO:Ga crystal on pulsed radiation detections

In this paper, properties on pulsed radiation detections of ZnO：Ga crystal grew by a magnetron sputtering method were studied. The time response to pulsed laser, pulsed hard X rays and single α particles, the energy response to pulsed hard X ray, the scintillation efficiency to γ rays, the response to pulsed proton, and the relations of the light intensity varied with the proton energy were measured and analyzed in detail. Results show that the ZnO：Ga crystal has potential applications in the regime of pulse radiation detection.     

Photoconductivity in metal-semiconductor-metal planar structures with ZnO:Ga and ZnO:Li films

Influence of UV radiation on photoelectric properties of ZnO:Ga and ZnO:Li films prepared by the electron-beam evaporation method was investigated. The photoconductivity was measured, using metal-semiconductor-metal planar structures where metallic aluminum was used as ohmic electrodes. The kinetics of rise and decay of the photoconductivity in these structures was studied. The change of photoconductivity under the action of UV radiation is considered as a result of the photoexcitation-relaxation into the conduction band and photochemical processes of absorption-desorption of oxygen at the film surface. The influence of a MgF₂ protective layer deposited on ZnO:Ga and ZnO:Li films was studied. Measurements of the spatial distribution of the potential between the anode and cathode for determination of the homogeneity of conductivity in the investigated planar structures were performed by the moving probe method.     

Timing performance of ZnO:Ga nanopowder composite scintillators

The implementation of nanocrystal‐based composite scintillators as a new generation of ultrafast particle detectors is explored using ZnO:Ga nanopowder. Samples are characterized with a spectral‐time resolved photon counting system and pulsed X‐rays, followed by coincidence time resolution (CTR) measurements under 511 keV gamma excitation. Results are comparable to CTR values obtained using bulk inorganic scintillators. Bringing the ZnO:Ga nanocrystal's timing performance to radiation detectors could pave the research path towards sub‐20 ps time resolution as shown in this contribution. However, an efficiency boost when placing nanopowders in a transparent host constitutes the main challenge in order to benefit from sub‐nanosecond recombination times. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

硬X光弯晶谱仪的定量化标定方法

介绍了具有定量化测量能力的硬X光弯晶谱仪的结构, 利用Mo靶X光管的K特征线作为标定源, 使用绝对标定过的Si(Li)探测器对X光管出射的特征线谱进行强度和谱测量。结合X光管空间分布均匀的特点, 计算进入弯晶谱仪的光子数目, 采取了特征谱扣去轫致谱的计数处理方法, 得到了17 keV和19 keV处弯晶谱仪的绝对效率, 分别为4.3210-4和3.9410-4。     

Experimental study on scintillation efficiency of ZnO:In to proton response

Film ZnO:In crystal is a good candidate for a scintillation recoil proton neutron detection system and the response of ZnO:In to protons is a crucial point. The energy response of ZnO:In to mono-energetic protons in the range of 10 keV-8 MeV was measured. The experiment was carried out in current mode, and Au foil scattering was employed, where the forward scattering protons were used for exciting the sample, and the backward scattering protons were used for monitoring the beam intensity. According to the result, the yield of light non-linearly depends on proton energy, and drops significantly when proton energy is low. The scintillation efficiency as a function of proton energy was obtained, which is very useful for researching the scintillation recoil proton neutron detection system.     

Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering

Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10⁻⁴ Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.     

Conductivity increase of ZnO:Ga films by rapid thermal annealing

Due to a constant increase in demands for transparent electronic devices the search for alternative transparent conducting oxides (TCO) is a major field of research now. New materials should be low-cost and have comparable or better optical and electrical characteristics in comparison to ITO. The use of n-type ZnO was proposed many years ago, but until now the best n-type dopant and its optimal concentration is still under discussion. Ga was proposed as the best dopant for ZnO due to similar atomic radius of Ga³⁺ compared to Zn²⁺ and its lower reactivity with oxygen. The resistivity ρ of ZnO:Ga/Si (100) films grown by PEMOCVD was found to be 3×10⁻² Ω cm. Rapid thermal annealing (RTA) was applied to increase the conductivity of ZnO:Ga (1 wt%) films and the optimal regime was determined to be 800  C in oxygen media for 35 s. The resistivity ratio before and after the annealing and the corresponding surface morphologies were investigated. The resistivity reduction () was observed after annealing at optimal regime and the final film resistivity was approximately ≈4×10⁻⁴ Ω cm, due to effective Ga dopant activation. The route mean square roughness (R_q) of the films was found to decrease with increasing annealing time and the grain size has been found to increase slightly for all annealed samples. These results allow us to prove that highly conductive ZnO films can be obtained by simple post-growth RTA in oxygen using only 1% of Ga precursor in the precursor mix.     

Transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering at low temperature

Ga-doped ZnO (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. The structural, electrical, and optical properties of ZnO:Ga films were investigated in a wide temperature range from room temperature up to 400 °C. The crystallinity and surface morphology of the films are strongly dependent on the growth temperatures, which in turn exert an influence on the electrical and optical properties of the ZnO:Ga films. The film deposited at 350 °C exhibited the relatively well crystallinity and the lowest resistivity of 3.4 × 10⁻⁴ Ω cm. More importantly, the low-resistance and high-transmittance ZnO:Ga films were also obtained at a low temperature of 150 °C by changing the sputtering powers, having acceptable properties for application as transparent conductive electrodes in LCDs and solar cells.