Interacting dirac fermions on a topological insulator in a magnetic field

We study the fractional quantum Hall states on the surface of a topological insulator thin film in an external magnetic field, where the Dirac fermion nature of the charge carriers have been experimentally established only recently. Our studies indicate that the fractional quantum Hall states should indeed be observable in the surface Landau levels of a topological insulator. The strength of the effect will however be different, compared to that in graphene, due to the finite thickness of the topological insulator film and due to the admixture of Landau levels of the two surfaces of the film. At a small film thickness, that mixture results in a strongly nonmonotonic dependence of the excitation gap on the film thickness. At a large enough thickness of the film, the excitation gap in the lowest two Landau levels are comparable in strength.     

Photoinduced Weyl semimetal phase and anomalous Hall effect in a three-dimensional topological insulator

Motivated by the fact that Weyl fermions can emerge in a three-dimensional topological insulator on breaking either time-reversal or inversion symmetries, we propose that a topological quantum phase transition to a Weyl semimetal phase occurs under the off-resonant circularly polarized light, in a three-dimensional topological insulator, when the intensity of the incident light exceeds a critical value. The circularly polarized light effectively generates a Zeeman exchange field and a renormalized Dirac mass, which are highly controllable. The phase transition can be exactly characterized by the first Chern number. A tunable anomalous Hall conductivity emerges, which is fully determined by the location of the Weyl nodes in momentum space, even in the doping regime. Our predictions are experimentally realizable through pump-probe angle-resolved photoemission spectroscopy and raise a new way for realizing Weyl semimetals and quantum anomalous Hall effects.     

声子晶体中的多重拓扑相

研究了圆环型波导依照蜂窝结构排列的声子晶体系统中的拓扑相变.利用晶格结构的点群对称性实现赝自旋,并在圆环中引入旋转气流来打破时间反演对称性.通过紧束缚近似模型计算的解析结果表明,没有引入气流时,调节几何参数,系统存在普通绝缘体和量子自旋霍尔效应绝缘体两个相;引入气流后,可以实现新的时间反演对称性破缺的量子自旋霍尔效应相,而增大气流强度,则可以实现量子反常霍尔效应相.这三个拓扑相可以通过自旋陈数来分类.通过有限元软件模拟了多个系统中边界态的传播,发现不同于量子自旋霍尔效应相,量子反常霍尔相系统的表面只支持一种自旋的边界态,并且它无需时间反演对称性保护.     

Torsional response and dissipationless viscosity in topological insulators

We consider the viscoelastic response of the electronic degrees of freedom in 2D and 3D topological insulators (TI's). Our primary focus is on the 2D Chern insulator which exhibits a bulk dissipationless viscosity analogous to the quantum Hall viscosity predicted in integer and fractional quantum Hall states. We show that the dissipationless viscosity is the response of a TI to torsional deformations of the underlying lattice geometry. The viscoelastic response also indicates that crystal dislocations in Chern insulators will carry momentum density. We briefly discuss generalizations to 3D which imply that time-reversal invariant TI's will exhibit a quantum Hall viscosity on their surfaces.     

Axion response in gapless systems

The strong topological insulator in 3D is expected to realize a quantized magnetoelectric response, the so-called axion response. However, many of the materials predicted to be topological insulators have turned out to be metallic, with bulk Fermi surfaces. Following the result of Bergman and Refael [Phys. Rev. B 82, 195417 (2010)] that the surface states of the topological insulator persist even when the band structure gap is closed, we explore the fate of the magnetoelectric response in such systems. We find that a nonquantized magnetoelectric coupling remains once a bulk Fermi surface opens. More generally, we find higher-dimensional analogs of the intrinsic anomalous Hall effect for all Chern forms-quantized transport coefficients in the gapped case become nonquantized when the gap is closed. In particular, the nonquantized magnetoelectric response in 3D descends from the intrinsic anomalous Hall effect analog in 4D.     

Hard-core Hall tube in superconducting circuits

The Hall tube as a minimum model to simulate the integer quantum Hall effect is essential for exploring topological physics, while it has not been constructed in the recent developing successfully experiments on superconducting circuits. In this work, we propose a feasible experiment scheme using three legs superconducting circuits with transmon qubits to realize a Hall tube. Then we first investigate its topological properties. Since the time-reversal, particle-hole, and chiral symmetries are all broken for the system, the Hall tube belongs to the A class of the Altland-Zirnbauer classification. We obtain the corresponding topological phase transition both numerically and analytically. Since the chirality is a key character of the quantum Hall effect, we secondly investigate the chiral physics in the Hall tube. We find the topological protected chiral edge currents and discuss its robustness. Finally, we give the possible experimental observations of the topological state and topological protected chiral edge currents.     

Topological response theory of doped topological insulators

We generalize the topological response theory of three-dimensional topological insulators (TI) to metallic systems-specifically, doped TI with finite bulk carrier density and a time-reversal symmetry breaking field near the surface. We show that there is an inhomogeneity-induced Berry phase contribution to the surface Hall conductivity that is completely determined by the occupied states and is independent of other details such as band dispersion and impurities. In the limit of zero bulk carrier density, this intrinsic surface Hall conductivity reduces to the half-integer quantized surface Hall conductivity of TI. Based on our theory we predict the behavior of the surface Hall conductivity for a doped topological insulator with a top gate, which can be directly compared with experiments.     

非共振圆偏振光作用下单层二硫化钼电子结构及其自旋/谷输运性质

基于紧束缚近似下的低能有效哈密顿模型和久保线性响应理论,研究了外部非共振圆偏振光作用下单层二硫化钼(MoS_2)电子结构及其自旋/谷输运性质.研究结果表明:单层MoS_2布里渊区K谷和K′谷附近自旋依赖子带间的能隙随着非共振右旋圆偏振光引起的有效耦合能分别线性增大和先减小后增大,随着非共振左旋圆偏振光引起的有效耦合能分别先减小后增大和线性增大,实现了系统能带结构有趣的半导体-半金属-半导体转变.此外,单层MoS_2在外部非共振圆偏振光作用下,呈现有趣的量子化横向霍尔电导和自旋/谷霍尔电导,自旋极化率在非共振右/左旋圆偏振光有效耦合能±0.79 eV附近达到最大并发生由正到负或由负到正的急剧转变,谷极化率随着非共振圆偏振光有效耦合能先增大后减小并在其绝对值0.79-0.87 eV范围内达到100%.因而,可以利用外部非共振圆偏振光将单层MoS_2调制成自旋/谷以及光电特性优异的新带隙材料.     

Optical tuning of Berry phase effect in topological insulators

We theoretically discuss the influence of driving laser field on the topological nature, one of the manifestation of the electron Berry phase effect, in two-dimensional electronic systems. Adiabatic change of the laser amplitude with circular polarization alters the “order parameter”, termed the Chern number, in topological insulator with broken time-reversal symmetry, resulting in photo-induced phase transition. The finding is an optical analog of the integer quantum Hall effect, that is triggered by the laser field instead of magnetic field. This parallelism suggests the similarity of effects to electron dynamics between circularly polarized light and magnetic field.     

Ultrafast dynamics of coherences in a quantum Hall system

Using three-pulse four-wave-mixing optical spectroscopy, we study the ultrafast dynamics of the quantum Hall system. We observe striking differences as compared to an undoped system, where the 2D electron gas is absent. In particular, we observe a large off-resonant signal with strong oscillations. Using a microscopic theory, we show that these are due to many-particle coherences created by interactions between photoexcited carriers and collective excitations of the 2D electron gas. We extract quantitative information about the dephasing and interference of these coherences.     

Floquet topological phase transitions and chiral edge states in a kagome lattice

The Floquet topological phases and chiral edge states in a kagome lattice under a circularly-polarized driving field are studied. In the off-resonant case, the system exhibits the similar character as the kagome lattice model with staggered magnetic fluxes, but the total band width is damped in oscillation. In the on-resonant case, the degeneracy splitting at the Γ point does not always result in a gap. The positions of the other two gaps are influenced by the flat band. With the field intensity increased, these two gaps undergo closing-then-reopening processes, accompanied with the changing of the winding numbers.     

Quantum spin Hall and quantum valley Hall effects in trilayer graphene and their topological structures

The present study pertains to the trilayer graphene in the presence of spin orbit coupling to probe the quantum spin/valley Hall effect. The spin Chern-number C_s for energy-bands of trilayer graphene having the essence of intrinsic spin–orbit coupling is analytically calculated. We find that for each valley and spin, C_s is three times larger in trilayer graphene as compared to single layer graphene. Since the spin Chern-number corresponds to the number of edge states,consequently the trilayer graphene has edge states, three times more in comparison to single layer graphene. We also study the trilayer graphene in the presence of both electric-field and intrinsic spin–orbit coupling and investigate that the trilayer graphene goes through a phase transition from a quantum spin Hall state to a quantum valley Hall state when the strength of the electric field exceeds the intrinsic spin coupling strength. The robustness of the associated topological bulk-state of the trilayer graphene is evaluated by adding various perturbations such as Rashba spin–orbit(RSO) interaction αR, and exchange-magnetization M. In addition, we consider a theoretical model, where only one of the outer layers in trilayer graphene has the essence of intrinsic spin–orbit coupling, while the other two layers have zero intrinsic spin–orbit coupling.Although the first Chern number is non-zero for individual valleys of trilayer graphene in this model, however, we find that the system cannot be regarded as a topological insulator because the system as a whole is not gaped.     

Topological quantization in units of the fine structure constant

Fundamental topological phenomena in condensed matter physics are associated with a quantized electromagnetic response in units of fundamental constants. Recently, it has been predicted theoretically that the time-reversal invariant topological insulator in three dimensions exhibits a topological magnetoelectric effect quantized in units of the fine structure constant α=e2/?c. In this Letter, we propose an optical experiment to directly measure this topological quantization phenomenon, independent of material details. Our proposal also provides a way to measure the half-quantized Hall conductances on the two surfaces of the topological insulator independently of each other.     

Large topological Hall effect in a short-period helimagnet MnGe

We have observed an unconventional, likely topological, Hall effect over a wide temperature region in the magnetization process of a chiral-lattice helimagnet MnGe. The magnitude of the topological Hall resistivity is nearly temperature-independent below 70 K, which reflects the real-space fictitious magnetic field proportional to a geometric quantity (scalar spin chirality) of the underlying spin texture. From the neutron diffraction study, it is anticipated that a relatively short-period (3-6 nm) noncoplanar spin structure is stabilized from the proper screw state in a magnetic field to produce the largest topological Hall response among the B20-type (FeSi-type) chiral magnets.     

Quantum Hall superfluids in topological insulator thin films

Three-dimensional topological insulators have protected Dirac-cone surface states. In this Letter we argue that gapped excitonic superfluids with spontaneous coherence between top and bottom surfaces can occur in the topological insulator (TI)-thin-film quantum Hall regime. We find that the large dielectric constants of TI materials increase the layer separation range over which coherence survives and decrease the superfluid sound velocity, but have little influence on the superfluid density or on the charge gap. The coherent state at total Landau-level filling factor νT=0 is predicted to be free of edge modes, qualitatively altering its transport phenomenology compared to the widely studied case of νT=1 in GaAs double-quantum wells.     

Rashba自旋轨道耦合下square-octagon晶格的拓扑相变

本文研究了各向同性square-octagon晶格在内禀自旋轨道耦合、Rashba自旋轨道耦合和交换场作用下的拓扑相变,同时引入陈数和自旋陈数对系统进行拓扑分类.系统在自旋轨道耦合和交换场的影响下会出现许多拓扑非平庸态,包括时间反演对称破缺的量子自旋霍尔态和量子反常霍尔态.特别的是,在时间反演对称破缺的量子自旋霍尔效应中,无能隙螺旋边缘态依然能够完好存在.调节交换场或者填充因子的大小会导致系统发生从时间反演对称破缺的量子自旋霍尔态到自旋过滤的量子反常霍尔态的拓扑相变.边缘态能谱和自旋谱的性质与陈数和自旋陈数的拓扑刻画完全一致.这些研究成果为自旋量子操控提供了一个有趣的途径.     

Numerical study of localization in quantum spin hall state of HgTe/CdTe system

HgTe/CdTe quantum well has served as a new material in realizing the quantum spin Hall state. We investigate the localization and scaling behavior of electronic states in HgTe/CdTe quantum wells through the scaling analysis. A phase diagram where the boundary separating the localized and extended states is plotted in the parameter space which is spanned with disorder strength and Fermi energy. We also discuss the implications of these results on the behavior of topological insulator.     

Quantum statistics of phonon radiations in optomechanical systems

We study the correlation statistics of phonon radiations in a weakly driven optomechanical system. Three dominated scattering processes are identified by the scattering theory analytically and the master equation numerically, whose interplay determines the phonon statistical properties. Our results show that for the large detuning, the driving field off-resonant with the system induces a small emission rate of two anti-bunched phonons. For the resonant driving field, there is a relatively large emission rate of two bunched phonons.