D波段功率放大器设计

基于0.13 m SiGe BiCMOS工艺, 研究和设计了一种D波段功率放大器芯片。该放大器芯片用了四个功率放大器单元和两个T型结网络构成。功率放大器单元采用了三级的cascode电路结构。低损耗的片上T型结网络既能起到片上功率合成/分配的功能, 又能对输入输出进行阻抗匹配。对电路结构进行了设计、流片验证和测试。采用微组装工艺将该芯片封装成为波导模块。小信号测试结果表明:该功放芯片工作频率为125~150 GHz, 最高增益在131 GHz为21 dB, 最低增益在150 GHz为17 dB, 通带内S22小于-7 dB, S11小于-10 dB。大信号测试结果表明:该功放模块在128~146 GHz带内输出功率都大于13 dBm, 在139 GHz时, 具有最高输出功率为13.6 dBm, 且1 dB压缩功率为12.9 dBm。     

Enhancement of Gain in L-Band Bismuth-Based Erbium-Doped Fibre Amplifier Using an Un-pumped EDF and Midway Isolator

A hybrid L-band erbium-doped fibre amplifier (EDFA) with enhanced gain characteristic is demonstrated without a significant noise figure penalty. It uses a backward C-band amplified stimulated emission from both the ends of a bismuth-based EDFA system to pump an unpumped erbium-doped fibre (EDF) for gain enhancing. The maximum gain enhancement of 4.0dB is obtained at wavelength 1604nm with EDF length of 20m. The gain spectrum is reasonably fiat in this amplifier compared with the amplifier without an EDF. The gain varies from 27.4 dB to 30.2 dB at wavelength region 1564-1608 nm with incorporation of 20 m EDF. Noise figure also varies from 6.0 to 7.TdB at this wavelength region.     

Hybrid flat gain C-band optical amplifier with Zr-based erbium-doped fiber and semiconductor optical amplifier

An efficient gain-flattened C-band optical amplifier is demonstrated using a hybrid configuration with a Zirconia-based Erbium-doped fibre (Zr-EDF) and a semiconductor optical amplifier (SOA). The amplifier utilizes a two-stage structure with a midway isolator to improve flat gain characteristic and reduce noise figure. At input signal power of −30 dBm, a flat gain of 28 dB is obtained from wavelength region of 1530 to 1560 nm with gain variation of less than 4 dB. The noise figure is maintained below 11 dB at the flat-gain region. This amplifier has the potential to be used in the high channel count dense wavelength division multiplexing system due to its simplicity and compact design.     

Effect of injection of C-band ASE on L-band erbium-doped fiber amplifier

The effect of injecting conventional band (C-band) amplified spontaneous emission on the performance of long-wavelength band erbium-doped fiber amplifier (L-band EDFA) is demonstrated. It uses a circulator and broadband fiber Bragg grating (FBG) to route C-band ASE from a C-band EDFA. Injection of a small amount of ASE (attenuation of 20 dB or above) improves the small signal gain with a negligible noise figure penalty compared to that of an amplifier without the ASE injection. A maximum gain improvement of 3.5 dB is obtained at an attenuation of 20 dB. At very large amounts of ASE injection (attenuation of 0 dB), the gain of the amplifier is clamped at 15.2 dB from ?40 to ?10 dBm with a gain variation of less than 0.3 dB. The saturation power is also increased from ?8 dBm (for without ASE injection) to 2 dBm (VOA=0 dB) with a slight noise figure penalty. These results show that the ASE injection technique can be used either for gain improvement or for gain clamping in L-band EDFA.     

A gain-clamped-semiconductor-optical-amplifier combined with a distributed Raman-fiber-amplifier: a good candidate as an inline amplifier for WDM networks

A gain-clamped semiconductor optical amplifier (SOA) is used as an inline amplifier in combination with a distributed Raman fiber amplifier. The combined amplifier has 20 dB gain and a noise figure below 2.7 dB. The optical signal to noise ratios after five spans of 20 dB loss, equivalent to 5 × 80 km, are over 25.2 dB for eight-channel transmissions. In addition, the potentially compact amplifier shows negligible transients under dynamic add-drops.     

Gain-flattened erbium-doped fiber amplifier with flexible selective band for optical networks

Erbium-doped fiber amplifier with flat gain over 30 nm bandwidth is demonstrated using flexible selective band methods. The band optical amplifier was designed to cater 44 wavelength division multiplexing channels which were separated into bands of 4 nm. Without using any gain flattening filter, the gain of optical amplifier was maintained at 19 dB with a maximum gain variation of less than 1.6 dB even though the input signal power was varied from −19 to −6 dBm. The amplifier was able to maintain 1 dB gain flatness with 83% chance for any selective bands of 4 nm within the wavelength range from 1530 to 1565 nm. This feature is very attractive to support band optical networks.     

High-gain erbium-doped fiber amplifier incorporating a double-pass amplification technique as a preamplifier

We present a high-gain erbium-doped fiber amplifier to be utilized as a preamplifier. A double-pass amplification technique is used in the first-stage amplifier together with a tunable bandpass filter. The secondstage amplifier is a counter-pumped configuration and another tunable bandpass filter is utilized to filter out amplified spontaneous emission from the first-stage amplifier. This design is able to produce a high gain of 55.6 dB and a noise figure of 6.02 dB at 1530 nm with a signal power of ?45 dBm. The receiver sensitivity measurement shows that the proposed amplifier improves the minimum detectable power from ?33.7 to ?40.8 dBm for a bit-error rate of 10^?11 at 155 Mbps.

     

A hybrid high-gain double-pass erbium-doped fiber amplifier with dispersion compensation feedback loop

A new double-pass erbium-doped fiber amplifier (DP-EDFA) using chirped fiber Bragg grating (CFBG) is reported here showing a gain of 53.4 dB and noise figure (NF) of 5.36 dB. The proposed amplifier at the same time provides dispersion compensation through the use of CFBG.     

合肥光源40kW高频固态发射机的研制进展

介绍了用于合肥光源800 MeV电子储存环高频系统的204 MHz,40 kW固态发射机的研制进展。该发射机为双塔结构,由130个330 W功放模块进行三级合成。其关键部件的样件包括10路功放和2.5kW八合一,20 kW八合一以及40 kW二合一功率合成器各1件的制作和测试已完成。测得各合成器输出端驻波比不超过1.05,功放模块的增益达到26 dB,幅相偏差小于0.1 dB和5°,达到设计要求。     

High gain S-band semiconductors optical amplifier with double-pass configuration

In this paper we propose and demonstrate a double-pass configuration of a compact high gain short wavelength (S-) band amplifier based on a semiconductor optical amplifier (SOA) operating from 1480 to 1520 nm. The proposed system provides gain value of 31.07 dB at a signal power level of −40 dBm taken at 1500 nm. The measure gain profile of the double-pass configuration over different power levels and at different signal wavelengths outperforms that of the single-pass configuration. The noise figure of both configurations averages out to 10 dB. This system provides a good alternative as a high-gain and compact amplifier in the S-band region.     

基于新型长周期光纤光栅的掺铒光纤放大器

报道了基于高频CO₂激光脉冲写入的新型长周期光纤光栅的低噪音掺铒光纤放大器,这种新型长周期光纤光栅是用大约几千Hz的高频CO₂激光脉冲对光纤玻璃热冲击作用而形成的.在铒纤中插入一个长周期光纤光栅,会明显减少掺铒光纤放大器的放大自发辐射(ASE)噪音.报道了两种低噪音掺铒光纤放大器,作为前置放大器和线路放大器,它们的ASE噪音指数分别从4.0 dB减少到3.5 dB和从4.8 dB减少到4.3 dB,并且在作为线放时,其小信号增益从30 dB提高到37 dB,降噪及提高增益效应十分显著.     

某型接收机后级放大器的设计

介绍了后级放大器的设计方法,放大器要求在1GHz带宽内增益平坦度≤±0.3dB,功率输出1dB压缩点≥8dBm.文中介绍应用ADS软件进行了电路设计和仿真,电路制版后装配调试.测试结果和仿真进行比较,指标满足设计要求.     

某型双频接收机混频中放组件的研制

介绍了S、X波段带数字控制衰减器的混频中放单元设计方法,带内增益平坦度≤±0.5dB,功率输出1dB压缩点≥15dBm;介绍了放大器增益的分配思路、数控衰减器的工作原理、电路的实现方法及电路制版后装配调试和测试结果,满足设计要求。     

High gain double-pass L-band EDFA with dispersion compensation as feedback loop

We demonstrate an efficient double-pass L-band erbium-doped fiber amplifier (EDFA) incorporating chirped fiber Bragg grating (CFBG). The amplifier structure exploits the characteristics of CFBG to reflect the amplified signal back into the gain medium, filter out the recycled forward amplified spontaneous emission and block the residual 1480 nm pump power. The amplifier configuration has high gain and low noise figures as compared to double-pass EDFA using broadband mirror. The demonstrated amplifier has gain of more than 48 dB and low noise figure of less than 4 dB at low input signal power of −40 dBm.     

Low noise gain-clamped L-band erbium-doped fiber amplifier by utilizing fiber Bragg grating

A novel gain-clamped long wavelength band (L-band) erbium-doped fiber amplifier (EDFA) is proposedand experimented by using a fiber Bragg grating (FBG) at the input end of the amplifier. This designprovides a good gain clamping and decreases noise effectively. It uses two sections of erbium-doped fiber(EDF) pumped by a 1480-nm laser diode (LD) for higher efficiency and lower noise figure (NF). The gainis clamped at 23 dB with a variation of 0.5 dB from input signal power of -30 to -8 dBm for 1589 nm andNF below 5 dB is obtained. At the longer wavelength in L-band higher gain is also obtained and the gainis clamped at 16 dB for 1614 nm effectively. Because the FBG injects a portion of backward amplifiedspontaneous emission (ASE) back into the system, the gain enhances 5 dB with inputting small signal.     

Near-noiseless amplification of light by a phase-sensitive fibre amplifier

We report near-noiseless (noise figure of 0.4 dB, which is an improvement over the theoretical limit of 1.2 dB for a conventional laser amplifier with the same gain of 1.7 dB) optical amplification of laser light in a phase-sensitive fibre amplifier.     

X波段极低噪声低温放大器

介绍了X波段极低噪声低温放大器的研制。在≤15K的环境温度下,X波段100MHz带宽内,实测放大器的等效噪声温度:≤8.8K;增益:>36dB;带内起伏:<0.4dB;输入反射损耗:<-22dB;输出反射损耗:<-20dB。它的研制成功,将可以替代进口产品满足X波段低温接收机的研制需要。     

Fundamentals of optical amplifiers

The minimum noise figure of linear phase-insensitive amplifiers is 3 dB, according to the constraint of the uncertainty principle. Laser amplifiers, parametric amplifiers and Raman amplifiers obey the general quantum limit in an ideal case. A degenerate parametric amplifier is a phase-sensitive linear amplifier, and thus is a noiseless amplifier with a noise figure of 0 dB. The noise figure degradation in a practical amplifier and the signal-to-noise ratio design of an optical amplifier system are presented. Several other amplifier characteristics, such as signal gain, frequency bandwidth and saturation output power, are also discussed.     

Watt-level Er-doped and Er-Pr-codoped ZBLAN fiber amplifiers at the 2.7-2.8 microm wavelength range

Characteristics of diode-pumped Er-doped and Er-Pr-codoped ZBLAN fiber amplifiers were investigated at the 2.7-2.8 microm wavelength range. An amplified signal of 4.6 W was obtained from the singly Er-doped amplifier for an input signal of 110 mW, corresponding to a net gain of 16.2 dB. An amplified signal of 2.65 W was obtained from the Er-Pr-codoped amplifier for an input signal of 70 mW, corresponding to a net gain of 15.8 dB. It is found that the gain bandwidth of the singly Er-doped amplifier is much narrower than that of the Er-Pr-codoped amplifier. Small gain, no gain, or even a loss for shorter-wavelength signals propagating through the singly Er-doped amplifier should attribute for the large number residual populations in the lower laser level caused by the inefficient depopulation of the energy transfer upconversion processes.     

Gain clamping in double-pass L-band EDFA using a broadband FBG

A highly efficient gain-clamped L-band EDFA with improved noise figure characteristic is demonstrated by simply adding a broadband C-band FBG in double-pass system. The combination of the FBG and optical circulator has created laser in the cavity for gain clamping. By adjusting the power combination of pumps 1 and 2, the clamped gain level can be controlled. The amplifier gain is clamped at 28.1 dB from −40 to −25 dBm with a gain variation of less than 0.5 dB by setting the pumps 1 and 2 at 59.5 and 50.6 mW, respectively. The gain is also flat from 1574 nm to 1604 nm with a gain variation of less than 3 dB. The corresponding noise figure varies from 5.6 to 7.6 dB, which is 0.8 to 2.6 dB less than those of unclamped amplifier.