Absorption coefficients for hydrogen—II. Calculated pressure-induced H2–H2 vibrational absorption in the fundamental region

The coefficient for pressure-induced vibrational absorption in H₂ndash;H₂ collisions was calculated for temperatures from 298 to 7000°K and wave numbers between 100 and 40,000 cm⁻¹ for local thermodynamic equilibrium. Because only transitions with a net change of +1 vibrational quanta were considered, the absorption was centered near the fundamental at 4161 cm⁻¹ in the infrared. The model included electronic configuration interaction, mechanical anharmonicity, vibration-rotation interaction, excited vibrational states, and more realistic intermolecular potential and line shapes than previously used. The integrated absorption coefficient at 3000°K was 2.1 times the previous theoretical value. An approximate formula for the absorption coefficient is given for rapid calculation.     

Infrared absorption and reflectivity of double perovskite Sr2FeWO6

In this work we present temperature dependent infrared reflectivity and absorption of Sr₂FeWO₆ between 700 and 17 K measured from 40 to 10000 cm⁻¹. The reflectivity spectra show well defined phonon bands peaking at 143, 227, 377 and 625 cm⁻¹ assigned to overlapping vibrational modes split from those active in cubic perovskite. We have also verified that this compound is structurally stable in the whole temperature range and that its optical gap at ∼750 cm⁻¹ (95 meV) undergoes only a minor high temperature decrease ascribed to new thermally accessible levels.     

Raman spectroscopy of RuSr2(Eu1.5Ce0.5)Cu2O10 magneto-superconductor

Raman spectroscopy studies are reported for the RuSr₂Eu_1.5Ce_0.5Cu₂O₁₀ (Ru-1222) compound at various temperatures of 300, 250, 200 and 90 K. Three distinct vibrational bands: the first at 110, 140, and 160 cm⁻¹, the second at 295 and 347 cm⁻¹, and third one at 651 cm⁻¹ are seen in Raman spectra of the compound at room temperature. These bands are attached to the Cu atoms’ c-direction, the Ru atoms’ ab-plane stretching and Ru atoms’ c-direction anti-stretching modes. Below 200 K, an extra vibrational mode is also seen at 260 cm⁻¹. Also, with a decrease in temperature, though the Cu vibrational modes remain intact, the Ru atoms’ ab-plane stretching (295 cm⁻¹) and c-direction anti-stretching (651 cm⁻¹) modes shift gradually to higher wave number positions. The frequencies of modes at 260 and 651 cm⁻¹ showed anomalous softening and line-width broadening below 100 K that corroborates well with the spin ordering seen in susceptibility studies. The studied compound is a ferromagnetic superconductor with magnetic ordering of the Ru spins at 200 K and superconductivity below 30 K. A magnetic and electrical transport characterization of the compound is also presented briefly.     

Calculation of the partition function for N2O

Internal and vibrational partition functions are tabulated for ¹⁴N₂¹⁶O for the temperature range 200–350°K at 10°K intervals. Rotational partition functions are also computed for the five lowest vibrational states.     

Neodymium luminescence in chalcogenides of europium-gallium: EuGaS4 and EuGa2Se4

Photoluminescence of chalcogenides of europium-gallium, EuGa₂S₄ and EuGa₂Se₄, doped with neodymium is investigated. The positions of Stark levels are determined from the spectra. The symmetry of luminescence centres is shown to be lower than cubic and the existence of nonequivalent centers is established. At 77 K the decay time of luminescence from the excited levels of Nd³⁺ depends on the spin of the states. That indicates a slow relaxation rate in the crystals under investigation. It is probable that these crystals can be used as effective luminophores.     

Luminescence of Ce and Pr doped Sr2Mg(BO3)2 under VUV-UV and X-ray excitation

This report presents the luminescence properties of Ce³⁺ and Pr³⁺ activated Sr₂Mg(BO₃)₂ under VUV-UV and X-ray excitation. The five excitation bands of crystal field split 5d states are observed at about 46 729, 44 643, 41 667, 38 314 and 29 762 cm⁻¹ (i.e. 214, 224, 240, 261 and 336 nm) for Ce³⁺ in the host lattice. The doublet Ce³⁺ 5d→4f emission bands were found at about 25 840 and 24 096 cm⁻¹ (387 and 415 nm). The influence of doping concentration and temperature on the emission characteristics and the decay time of Ce³⁺ in Sr₂Mg(BO₃)₂ were investigated. For Pr³⁺ doped samples, the lowest 5d excitation band was observed at about 42017 cm⁻¹ (238 nm), a dominant band at around 35714 cm⁻¹ (280 nm) and two shoulder bands were seen in the emission spectra. The excitation and emission spectra of Ce³⁺ and Pr³⁺ were compared and discussed. The X-ray excited luminescence studies show that the light yields are ∼3200±230 and ∼1400±100 photons/MeV of absorbed X-ray energy for the samples Sr_1.86Ce_0.07Na_0.07Mg(BO₃)₂ and Sr_1.82Pr_0.09Na_0.09Mg(BO₃)₂ at RT, respectively.     

Phonon-assisted optical bands of nanosized powdery SrAl2O4:Eu crystals: Evidence of a multimode Pekarian

A stoichiometric powder composed of nanosized grains of SrAl₂O₄:Eu²⁺ was synthesized by combustion method at 500 °C with the subsequent calcination at 1000 °C. The zero-phonon line position, parameter of the Stokes shift, heat release factor and effective phonon energy were studied experimentally and analyzed in the framework of the multimode Pekar–Huang–Rhys model. Experimental data show that the optical 4f–5d$4f\text{–}5d$ transitions in Eu²⁺ ion exhibit a broad asymmetric electron–vibrational bands with a pronounced structure near the maxima. The form-function of the absorption and luminescence bands are theoretically analyzed in the framework of the model of the linear electron–vibrational interaction assuming strong coupling with the local vibration (estimated Pekar–Huang–Rhys parameter a=2S=10$a=2S=10$ and frequency ?ω=509 cm⁻¹$?\omega =509{\text{cm}}^{-1}$) and relatively weak interaction with the crystal phonons. The last results in an effective temperature dependent broadening of the discrete lines corresponding to the local vibrations and to a specific shape of the whole phonon assisted band (multimode Pekarian). Providing specific interrelation between the key parameters the calculated absorption and luminescence bands exhibit peculiar temperature dependent structured peaks in a qualitative agreement with the experimental data.     

ESR spectra of Eu centers in defect Ga2S3 single crystals

In this paper, the author presents the results of measurements of the low-temperature and angular dependences of the ESR spectra of Eu²⁺ centers in defect Ga₂S₃ single crystals in the temperature range 8–29 K and for 0–180° orientations of the static magnetic field. The electron structure of impurity ¹⁵¹Eu atoms in Ga₂S₃:Eu single crystals has been studied by using the ESR method at different doping proportions of Eu atoms. Ga₂S₃ single crystals were grown from the melt using the Bridgman method. The Eu concentration was determined by atomic absorption analysis and X–ray fluorescence analysis (XRFA). By investigation on the ESR spectra, the author has first determined the values of charge states for Eu, which have turned out to be a Eu²⁺(4f⁷) ion with spin S=7/2, g=4.18±0.02 and concentration of the states of Eu N=6.3×10¹⁴ cm⁻³.     

The fir-absorption of V2O5 single crystals doped with monovalent interstitial impurities: Li,Na, Cu

Absorption spectra are presented of α-M_xV₂O₅ single crystals (M = Li, Na, Cu) in the frequency range 15–105 cm^-1 and at temperatures between 4 and 78 K. Impurity-induced absorption bands are observed at 29 and 53 cm^-1 with E ∥ [010]. A discussion is made of assignments to electronic and vibrational mechanisms.     

Crystal structure and photoluminescence of (Y1−xCex)2Si3O3N4

Oxonitridosilicate phosphors with compositions of (Y_1−xCe_x)₂Si₃O₃N₄ (x=0−0.2) have been synthesized by solid state reaction method. The structures and photoluminescence properties have been investigated. Ce³⁺ ions have substituted for Y³⁺ ions in the lattice. The emission and excitation spectra of these phosphors show the characteristic photoluminescence spectra of Ce³⁺ ions. Based on the analyses of the diffuse reflection spectra and the PL spectra, a systematic energy diagram of Ce³⁺ ion in the forbidden band of sample with x=0.02 is given. The best doping Ce content in these phosphors is ∼2 mol%. The quenching temperature is ∼405 K for the 2 mol% Ce content sample. The luminescence decay properties were investigated. The primary studies indicate that these phosphors are potential candidates for application in three-phosphor-converted white LEDs.     

Crystallization studies on AgI-Ag2O-MoO3 superionic system synthesized by melt quenching and mechanical milling

Crystallization in the melt-quenched (MQ) and mechanically milled (MM) superionic systems has been thoroughly investigated using differential scanning calorimetry, X-ray diffraction and electrical conductivity measurements. It is observed that the two systems obey different crystallization processes. The conventionally melt-quenched samples exhibit only one crystallization peak near 112 °C, whereas, the mechanochemically synthesized samples show two well-separated crystallization peaks at T_cl∼75-97 °C and T_c2∼132±2 °C. The higher value of electrical conductivity in the mechanochemically synthesized samples (∼10⁻² Ω⁻¹ cm⁻¹ at 300 K) than the melt-quenched samples is attributed to the higher value of disorder (entropy) in the former.     

Mössbauer study of antiferromagnetic CuFeO2

We have studied the magnetic spin structure of antiferromagnetic CuFeO₂ by X-ray diffraction (XRD) and Mössbauer spectroscopy. Its crystal structure determined by XRD analysis was a rhombohedral structure (space group R-3m) and lattice constants a₀ and c₀ were 3.0333 and 17.1595 Å, respectively. In spite of 4-Fe sublattices in a delafossite CuFeO₂, its Mössbauer spectra were analyzed with 1-set (6-Lorentzian lines) below 10 K due to the collinear-commensurate spin structure, but the spectra were fitted with 4-sextet above 10 K due to the incommensurate spin structure. This phenomenon was attributed to the spin–lattice relaxation effect. Magnetic Néel temperature was also determined at 18 K, which corresponded to the high-spin Fe³⁺ valance state. On the other hand, CuFe_0.98Al_0.02O₂ powder with a noncollinear spin structure was fitted with 4-sextet at 4.2 K.     

Analysis of the CIA spectra of the first overtone band of D2 in D2-N2

Enhancement spectra of the collision-induced absorption (CIA) in the first overtone region 5000-7000 cm⁻¹ of D₂ in D₂-N₂ were studied at 298 K for a base density of D₂ of 73 amagat and for partial densities of N₂ in the range 150-370 amagat. The observed spectra were modeled with a total of 1176 components of double vibrational transitions. Binary and ternary absorption coefficients were determined from the integrated absorption of the band. Profile analysis of the spectra was carried out using the Birnbaum-Cohen line-shape function for the individual components of the band, and characteristic line-shape parameters were determined from the analysis. Good agreement was obtained between the experimental and calculated spectral profiles.     

Raman spectra of CrO2 and MoO2 single Crystals

The Raman spectra of single crystals of CrO₂ and MoO₂ have been studied from 77°K to 500°K for a comparison with the heavily damped phonon features in metallic VO₂. The spectrum of MoO₂ is very similar to that of monoclinic VO₂ whereas CrO₂ exhibits phonon spectra similar to rutile with no appreciable change at the ferromagnetic c curie temperature. The results are discussed with respect to the various models proposed for the semiconductor-to-metal transition in VO₂.     

Luminescence properties of Mn doped Zn2SiO4 phosphor films synthesized by combustion CVD

Zn₂SiO₄:Mn²⁺ phosphor films were successfully prepared by a novel combustion chemical vapor deposition (CCVD) method. In the CCVD process, a flammable solution, containing precursor materials, is atomized and sprayed through a specially designed nozzle and ignited to form a combustion flame. This enables crystallized films to be directly deposited onto a substrate in open-atmosphere with no post deposition heat treatment. SEM images indicated that the film deposited at 1200 °C consisted of densely packed particles with a fine grain size of several 100 nm. Strong Photoluminescence (PL) and cathodoluminescence (CL) intensities were observed with Zn₂SiO₄:Mn²⁺ samples deposited at a substrate temperature of 1200 °C exhibiting the best crystallinity and highest luminescence. The optimum doping level for films deposited using CCVD was found to be ∼4 mol% Mn²⁺ of starting concentration, with a maximum CL luminescence equivalent to 53% of the luminescence measured from a commercial powder phosphor. A relatively fast CL decay with life time about 0.6-0.7 ms was also observed from these films.     

Photoluminescence of chromium doped CdIn2S4

Well-resolved photoluminescence spectra of CdIn₂S₄: Cr³⁺ recorded at 77K and 2K have been analysed. The R-lines from the doublet ²E-⁴A₂ transition and their associated vibronic spectra have been assigned. These results yield a revised value for the crystal field parameter of B = 618 cm^-1     

Optical absorption spectra of synthetic CoCO3 single crystal

New results have been obtained on absorption spectra of synthetic CoCO₃ single crystal in the spectral range from the 11,500 to 34,500 cm^-1. Some vibration frequencies of the (CO₃)^2- ions have deduced from the absorption spectrum and zero-phonon lines have been identified. In the regions 22,900 and 24,500 cm^-1, a shift is observed of absorption frequencies with antiferromagnetic order for temperatures increasing from 4.2 to 20°K.     

Optimal growth conditions for GdBa2Cu3O7 thin-film coated conductors characterized by polarized Raman scattering spectroscopy

High temperature superconducting GdBa₂Cu₃O₇ (GdBCO) thin films were grown by pulsed laser ablation. Textured MgO on metal substrates was used as a template for second generation wire applications. Growth conditions of GdBCO thin films were investigated for substrate temperature (T_s) and oxygen partial pressure (PO₂) during deposition. Superconducting critical currents of the films were obtained in the films grown at 790–810 °C of T_s and at 100–700 mTorr of PO₂. Scanning electron micrographs of the films revealed uniform and well-connected grains with some outgrown structures. X-ray θ–2θ scans of the films grown at 810 °C and 300–500 mTorr exhibited c-axis oriented texture. In-plane alignment and c-axis mosaic spread of the films were determined from X-ray Φ scans and rocking curves, respectively. Polarized Raman scattering spectroscopy was used to characterize optical phonon modes, oxygen content, cation disorder, and some possible second phases of the films. The Raman spectra of the films with large critical current density showed modes at 326–329 cm⁻¹, 444–447 cm⁻¹, 500–503 cm⁻¹ related to vibration of oxygen atoms. Origin of small peaks near 600 cm⁻¹ will be discussed as well. The information obtained from Raman scattering measurements will be useful for quality control of the conductors as well as optimization of the process conditions.     

Electrical and infrared study of Bi2Sr2Ca1Cu2O8 in semiconducting, superconducting ceramic and superconducting glass ceramic state

We have studied the electrical and infrared properties of Bi₂Sr₂Ca₁Cu₂O₈ compound in three states. Electrical and IR measurements show that the pure powder state sample is a semiconductor, the ceramic Bi₂Sr₂Ca₁Cu₂O₈ sample prepared after annealing at 820°C for 240 hours shows a T_c of 85 K, whereas Bi₂Sr₂Ca₁Cu₂O₈ sample prepared through glassy route, i.e. melting at 1250°C and annealing at 820°C for 240 hours shows a drop of T_c by 5 K. The infrared spectra of superconducting ceramic and glass ceramic states in the available frequency range of measurement reveals the presence of three phonons. Since the vibrational mode around 595 cm^–1 is due to CuO₂ layers and as the CuO₂ layers are responsible for T_c in the ceramic superconductors, any change in these layers will affect the T_c. The shifting of the 595 cm^–1 mode towards lower frequencies in the glass ceramic due to different preparation process, indicates that there is a change in CuO₂ layers resulting in a change of T_c, which is confirmed by Four probe dc measurements.     

Structural and photoluminescence properties of ZrO2:Eu @ SiO2 nanophosphors as a function of annealing temperature

The synthesis, morphology and luminescence properties of two systems comprising luminescent Eu³⁺-doped zirconium oxide nanocrystals embedded in an amorphous silica matrix are reported. The two systems, prepared with the same overall wt% composition of silica (75%) and Eu_xZr_(1−x)O_(2−x/2) solid solution (25%), have been annealed in the range 135–1000 °C and subsequently functionalized with (3-aminopropyl)triethoxysilane. Detailed X-ray diffraction analyses and transmission electron micrographs, combined with infrared spectroscopy and luminescence spectroscopy data, have been used to demonstrate the influence of annealing temperature on the: (i) nanostructure, (ii) luminescence properties and (iii) availability of superficial –OH groups for efficient surface functionalization. The optimum calcination temperature was found to be 700 °C for each series in terms of luminescence lifetime efficiency and post-functionalization efficiency with (3-aminopropyl)triethoxysilane.