Bismuth telluride topological insulator nanosheet saturable absorbers for q‐switched mode‐locked Tm:ZBLAN waveguide lasers

Nanosheets of bismuth telluride (Bi₂Te₃), a topological insulator material that exhibits broadband saturable absorption due to its non‐trivial Dirac‐cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi₂Te₃ solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm². For the first time to our knowledge, Q‐switched mode‐locked operation of a linearly polarized mid‐IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi₂Te₃. The maximum average output power of the laser is 16.3 mW and the Q‐switched and mode‐locked repetition rates are 44 kHz and 436 MHz, respectively.     

Application of femtosecond‐pulsed lasers for direct optical manipulation of biological functions

Absorption of photon energy by cells or tissue can evoke photothermal, photomechanical, and photochemical effects, depending on the density of the deposited energy. Photochemical effects require a low energy density and can be used for reversible modulation of biological functions. Ultrashort‐pulsed lasers have a high intensity due to the short pulse duration, despite its low average energy. Through nonlinear absorption, these lasers can deliver very high peak energy into the submicrometer focus area without causing collateral damage. Absorbed energy delivered by ultrashort‐pulsed laser irradiation induces free electrons, which can be readily converted to reactive oxygen species (ROS) and related free radicals in the localized region. Free radicals are best known to induce irreversible biological effects via oxidative modification; however, they have also been proposed to modulate biological functions by releasing calcium ions from intracellular organelles. Calcium can evoke variable biological effects in both excitable and nonexcitable cell types. Controlled stimulation by ultrashort laser pulses generate intracellular calcium waves that can modulate many biological functions, such as cardiomyocyte beat rate, muscle contractility, and blood–brain barrier (BBB) permeability. This article presents optical methods that are useful therapeutic and research tools in the biomedical field and discuss the possible mechanisms responsible for biological modulation by ultrashort‐pulsed lasers, especially femtosecond‐pulsed lasers.     

Mechanochemically induced cross‐dimerizations of nitrosobenzenes. Kinetics and solid‐state isotope effects

Mechanical treatment (milling) of crystals of aromatic nitroso dimers (azodioxides) induces their dissociation and cross‐dimerizations. The mechanisms of these processes are discussed on the basis of kinetic studies and the solid‐state ¹⁵ N kinetic isotope effect, which is measured for the first time. By comparison with analogous processes in cocrystals and in melts, it appears that the reactions follow similar mechanism in which the surface deformations play the crucial role. The system can also be used as a model for a more general conceptual study of solid‐state reaction mechanisms. Copyright © 2013 John Wiley & Sons, Ltd.     

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light engine of SSL still have significant performance limitations. Foremost among these is the decrease in efficiency at high input current densities widely known as “efficiency droop.” Efficiency droop limits input power densities, contrary to the desire to produce more photons per unit LED chip area and to make SSL more affordable. Pending a solution to efficiency droop, an alternative device could be a blue laser diode (LD). LDs, operated in stimulated emission, can have high efficiencies at much higher input power densities than LEDs can. In this article, LEDs and LDs for future SSL are explored by comparing: their current state‐of‐the‐art input‐power‐density‐dependent power‐conversion efficiencies; potential improvements both in their peak power‐conversion efficiencies and in the input power densities at which those efficiencies peak; and their economics for practical SSL.     

Superfluid to Mott‐insulator transition in an anisotropic two‐dimensional optical lattice

We study the superfluid to Mott‐insulator transition of bosons in an optical anisotropic lattice by employing the Bose‐Hubbard model living on a two‐dimensional lattice with anisotropy parameter κ. The compressible superfluid state and incompressible Mott‐insulator (MI) lobes are efficiently described analytically, using the quantum U(1) rotor approach. The ground state phase diagram showing the evolution of the MI lobes is quantified for arbitrary values of κ, corresponding to various kind of lattices: from square, through rectangular to almost one‐dimensional.     

Research challenges to ultra‐efficient inorganic solid‐state lighting

Solid‐state lighting is a rapidly evolving, emerging technology whose efficiency of conversion of electricity to visible white light is likely to approach 50% within the next several years. This efficiency is significantly higher than that of traditional lighting technologies, giving solid‐state lighting the potential to enable significant reduction in the rate of world energy consumption. Further, there is no fundamental physical reason why efficiencies well beyond 50% could not be achieved, which could enable even more significant reduction in world energy usage. In this article, we discuss in some detail: (a) the several approaches to inorganic solid‐state lighting that could conceivably achieve “ultra‐high,” 70% or greater, efficiency, and (b) the significant research questions and challenges that would need to be addressed if one or more of these approaches were to be realized.     

III‐nitride quantum dots for ultra‐efficient solid‐state lighting

III‐nitride light‐emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III‐nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD‐based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD‐based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. If constructed properly, III‐nitride light‐emitting devices with QD active regions have the potential to outperform quantum well light‐emitting devices, and enable an era of ultra‐efficient solid‐state lighting.

     

In situ monitoring of solid‐state transition of p‐aminobenzoic acid polymorphs using Raman spectroscopy

The purpose of this study is to investigate the mechanism of solid‐state polymorphic transition of p‐aminobenzoic acid (PABA) using in situ Raman spectroscopy measurement. The polymorphic transition experiments were conducted on a micro quartz vessel mounted on a microscope, hot and cold stage, under isothermal conditions. The temperature was precisely controlled by a standalone temperature controller equipped with liquid nitrogen cooling system. The Raman spectroscopy probe was positioned on the surface of the solid sample in the micro vessel. The polymorphic transition progression was in situ monitored and recorded by Raman spectroscopy. Based on the polymorphic transition rate resulted from the quantitative analysis of Raman spectra, the mechanism of solid‐state polymorphic transition of PABA was examined by various empirical kinetic models. An Arrhenius analysis was also performed to calculate activation energies from 134.7 kJ mol⁻¹ to 137.7 kJ mol⁻¹ for the transition. The results demonstrated that in situ Raman spectroscopy is a valuable and accurate technique to probe polymorphic transition process. Copyright © 2009 John Wiley & Sons, Ltd.     

Functional organic single crystals for solid‐state laser applications

In the article by Hong‐Hua Fang et al. (doi: http://dx.doi.org/10.1002/lpor.201300222 ), published in Laser Photonics Rev. 8, 687–715 (2014), the names of two authors in references were wrongly spelt and citations in the text were missing. This erratum is published to correct this.     

Functional organic single crystals for solid‐state laser applications

Because of long‐range order and high chemical purity, organic crystals have exhibit unique properties and attracted a lot of interest for application in solid‐state lasers. As optical gain materials, they exhibit high stimulated emission cross section and broad tunable wavelength emission as similar to their amorphous counterpart; moreover, high purity and high order give them superior properties such as low scattering trap densities, high thermal stability, as well as highly polarized emission. As electronic materials, they are potentially able to support high current densities, thus making it possible to realize current driven lasers. This paper mainly describes recent research progress in organic semiconductor laser crystals. The building molecules, crystal growth methods, as well as their stimulated emission characteristics related with crystal structures are introduced; in addition, the current state‐of‐the‐art in the field of crystal laser devices is reviewed. Furthermore, recent advances of crystal lasers at the nanoscale and single crystal light‐emitting transistors (LETs) are presented. Finally, an outlook and personal view is provided on the further developments of laser crystals and their applications.     

Erbium‐doped integrated waveguide amplifiers and lasers

Erbium‐doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5–1.6 µm. Er‐doped fiber amplifiers enable efficient, stable amplification of high‐speed, wavelength‐division‐multiplexed signals, thus continue to dominate as part of the backbone of longhaul telecommunications networks. At the same time, Er‐doped fiber lasers see many applications in telecommunications as well as in biomedical and sensing environments. Over the last 20 years significant efforts have been made to bring these advantages to the chip level. Device integration decreases the overall size and cost and potentially allows for the combination of many functions on a single tiny chip. Besides technological issues connected to the shorter device lengths and correspondingly higher Er concentrations required for high gain, the choice of appropriate host material as well as many design issues come into play in such devices. In this contribution the important developments in the field of Er‐doped integrated waveguide amplifiers and lasers are reviewed and current and future potential applications are explored. The vision of integrating such Er‐doped gain devices with other, passive materials platforms, such as silicon photonics, is discussed.     

Tens of GHz Tantalum pentoxide‐based micro‐ring all‐optical modulator for Si photonics

A tantalum pentoxide‐based (Ta₂O₅‐based) micro‐ring all‐optical modulator was fabricated. The refractive index inside the micro‐ring cavity was modified using the Kerr effect by injecting a pumped pulse. The transmittance of the ring resonator was controlled to achieve all‐optical modulation at the wavelength of the injected probe. When 12 GHz pulses with a peak power of 1.2 W were coupled in the ring cavity, the transmission spectrum of the Ta₂O₅ resonator was red‐shifted by 0.04 nm because of the Kerr effect. The relationship between the modulation depth and gap of the Ta₂O₅ directional coupler is discussed. An optimized gap of 1100 nm was obtained, and a maximum buildup factor of 11.7 with 84% modulation depth was achieved. The nonlinear refractive index of Ta₂O₅ at 1.55 μm was estimated as 3.4 × 10^?14 cm²/W based on the Kerr effect, which is almost an order of magnitude higher than that of Si₃N₄. All results indicate that Ta₂O₅ has potential for use in nonlinear waveguide applications with modulation speeds as high as tens of GHz.

     

Photochromism of dihydroindolizines Part XIX. Efficient one‐pot solid‐state synthesis,kinetic, and computational studies based on dihydroindolizine photochromes

For the first time, one‐pot solid‐state synthesis of 12 photochromic materials based on photochromic dihydroindolizine system substituted in both fluorene part (region A) and the heterocyclic part (region C) has been established. This method has immense advantages, which are short‐time reaction, high‐yield and low‐yield by‐products, and easily purification and separation processes. In addition, this method will help in getting over the tremendously purification and low‐yield problems faced since the worth‐finding of this family of photochromic materials. The absorption maxima (λ_max) and the half‐lives (t_1/2) of the colored betaines were detected in all cases using multichannel UV/Vis spectrophotometric measurements. The rate constants of the thermal back reaction of the betaines were determined at constant temperature by measuring the decrease in the maximum absorption intensity (λ_max) with time. The half‐lives (t_1/2) and rate constants (k) of betaines under examination were calculated by plotting lnA against time (t). The kinetic measurements could be detected by both spectra scan and time‐dependent decay measurements. Examination of the Arrhenius parameters reveals an underlying compensation between E_a and log A, whereby an increase in E_a is opposed by an increase in log A. The compensation appears in the corresponding Eyring parameters, ΔH^≠ and ΔS^≠; betaine structural changes that lead to lower, more favorable enthalpies of activation engender opposing entropic changes. At the isokinetic temperature T_iso = β, structural changes do not affect the rate constant of a reaction series because the changes of ΔH^≠ are counterbalanced by changes of ΔS^≠. The existence of an isokinetic relationship indicates a common structure of the transition state of all thermal back reaction of betaine under investigation. The computational results suggest that the decoloration reaction is a two‐step mechanism. The first step corresponds to the transoid–cisoid isomerization with an activation barrier of 10.3 kJ mol^?1, and the second step is the ring closure from the cisoid intermediate with a barrier 71.3 kJ mol^?1, which represent the rate determining step for thermal decoloration. The photochemical ring opening of DHIs to betaines is a disrotatory 1,5‐electrocyclic reaction, whereas the thermal ring‐closing occurs in the conrotatory mode. Copyright © 2016 John Wiley & Sons, Ltd.     

It's not easy being green: Strategies for all‐nitrides,all‐colour solid state lighting

The design strategy presently employed to obtain ‘white’ light from semiconductors combines the emission of an InGaN blue or UV light‐emitting diode (LED) with that of one or more yellow‐orange phosphors. While commercially successful, this approach achieves good colour rendering only by increasing the number and spectral range of the phosphors used; compared to the alternative of combining ‘true’ red, green and blue (RGB) sources, it is intrinsically inefficient. The two major roadblocks to the RGB approach are 1. the green gap in the internal quantum efficiency (IQE) of LEDs; 2. the diode droop in the efficiency of LEDs at higher current densities. The physical origin of these effects, in the case of III‐nitrides, is generally thought to be a combination of Quantum Confined Stark Effect (QCSE) and Auger Effect (AE). These effects respectively reduce the electron–hole wave‐ function overlap of In‐rich InGaN quantum wells (QW), and provide a non‐radiative shunt for electron–hole recombination, particularly at higher excitation densities. SORBET, a novel band gap engineering strategy based upon quantum well intermixing (QWIM), offers solutions to both of the roadblocks mentioned above. In this introduction to SORBET, its great potential is tested and confirmed by the results of simulations of green InGaN diodes performed using the TiberCAD device modelling suite, which calculates the macroscopic properties of real‐world optoelectronic and electronic devices in a multiscale formalism. An alternative approach to the realisation of RGB GaN‐based LEDs through doping of an active layer by rare earth (RE) ions will also be briefly described. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Rate constant measurements for initial addition reactions of radicals at the propagation step of photo‐polymerization as studied by pulsed EPR spectroscopy

Pulsed EPR spectroscopy was employed to determine reaction rate constants at an early stage of addition reactions in radical polymerizations triggered by four initiator radicals, which were generated by photodissociation of four parent molecules. Two monomers (tert‐butylacrylate and tert‐butylmethacrylate) were examined as reactant. Stern–Volmer analysis on the measured decay time of electron spin echo intensity of reacting radicals provides rate constants for addition reactions. We focused on rate constants for the second step reaction between monomer and adduct radical that is produced by the first step addition reaction between initiator radical and monomer. The rate constant measured by pulsed EPR was evaluated by theoretical calculations in the light of (1) enthalpy difference between product radical and reactants and (2) charge transfer interaction between reacting radical and monomer. Copyright © 2016 John Wiley & Sons, Ltd.     

A Raman spectroscopic study of the different vanadate groups in solid‐state compounds—model case: mineral phases vésigniéite [BaCu3(VO4)2(OH)2] and volborthite [Cu3V2O7(OH)2·2H2O]

Raman spectroscopy has been used to study vanadates in the solid state. The molecular structure of the vanadate minerals vésigniéite [BaCu₃(VO₄)₂(OH)₂] and volborthite [Cu₃V₂O₇(OH)₂·2H₂O] have been studied by Raman spectroscopy and infrared spectroscopy. The spectra are related to the structure of the two minerals. The Raman spectrum of vésigniéite is characterized by two intense bands at 821 and 856 cm⁻¹ assigned to ν₁ (VO₄)³⁻ symmetric stretching modes. A series of infrared bands at 755, 787 and 899 cm⁻¹ are assigned to the ν₃ (VO₄)³⁻ antisymmetric stretching vibrational mode. Raman bands at 307 and 332 cm⁻¹ and at 466 and 511 cm⁻¹ are assigned to the ν₂ and ν₄ (VO₄)³⁻ bending modes. The Raman spectrum of volborthite is characterized by the strong band at 888 cm⁻¹, assigned to the ν₁ (VO₃) symmetric stretching vibrations. Raman bands at 858 and 749 cm⁻¹ are assigned to the ν₃ (VO₃) antisymmetric stretching vibrations; those at 814 cm⁻¹ to the ν₃ (VOV) antisymmetric vibrations; that at 508 cm⁻¹ to the ν₁ (VOV) symmetric stretching vibration and those at 442 and 476 cm⁻¹ and 347 and 308 cm⁻¹ to the ν₄ (VO₃) and ν₂ (VO₃) bending vibrations, respectively. The spectra of vésigniéite and volborthite are similar, especially in the region of skeletal vibrations, even though their crystal structures differ. Copyright © 2011 John Wiley & Sons, Ltd.