High LO-to-RF isolation 94 GHz coplanar monolithic down-converter for FMCW radar sensor applications

This paper presents a 94 GHz monolithic down-converter with low conversion loss and high local oscillator (LO)-to-RF isolation using the 0.1 μm T-gate metamorphic high electron-mobility transistor (MHEMT) technology. The down-converter consists of a one-stage amplifier and a single-balanced mixer based on the high-directivity tandem coupler structure using the air-bridge crossovers, thereby amplifying the RF signals and maximizing the LO-to-RF isolation by using an inherent S₁₂ isolation characteristic of the amplifier and good phase balance of the tandem coupler. The fabricated one-stage amplifier using a 30 μm × 2 MHEMT shows a small signal gain of 7 dB at 94 GHz. The single-balanced mixer comprising two 20 μm × 2 MHEMT Schottky diodes and the tandem coupler with an additional λ/4-length line exhibits the conversion loss less than 7.8 dB and the LO-to-RF isolation higher than 30 dB in a RF frequency range of 91–96 GHz. Two circuits designed both for a 50 Ω impedance system are integrated into the down-converter of a 2.6 × 2.5 mm² chip size, and it shows a low conversion loss of ∼1 dB at 94 GHz and excellent LO-to-RF isolation above 40 dB in a frequency range of 90–100 GHz. This is the best isolation among the W-band monolithic down-converters reported to date.     

High conversion gain cascode quadruple subharmonic mixer for millimeter-wave applications

In this paper, we have presented millimeter-wave high conversion gain quadruple subharmonic mixers adopting the cascode structure. The subharmonic mixers were successfully integrated by using 0.1 μm GaAs pseudomorphic HEMTs (PHEMT's) and the coplanar waveguide (CPW) structures. From the measurement at LO power of 13 dBm at 14.5 GHz, it shows that conversion gain is 3.4 dB which is one of the best conversion gains at 60.4 GHz. Isolations of LO-to-IF and LO-to-RF were −53.6 dB and −46.2 dB, at a frequency of 14.5 GHz, respectively.     

Design of Ka-band Monolithic Image Rejection Mixer

In this paper, a 30–40 GHz monolithic image rejection mixer is described. The mixer employs two drain LO injection mixer cells, which can perform well even with zero drain bias voltage. Also it employs Lange Coupler for RF quadrature signal generation. The mixer is fabricated by a commercial 0.18-μm pseudomorphic high electron-mobility transistor (pHEMT) process. It achieves image rejection ratio of more than 20.4 dB and conversion loss of less than 12.6 dB in the frequency range of 30 to 38 GHz.     

0.34 THz无线通信收发前端

描述了一种基于肖特基二极管技术的0.34 THz无线通信收发前端。该前端采用超外差结构,由0.34 THz谐波混频器、0.17 THz本振8倍频链和偏置电路组成。0.34 THz谐波混频器基于反向并联肖特基二极管,可以实现信号的上变频发射和下变频低噪声检测。0.17 THz本振8倍频链由三级二倍频及驱动放大链路组成,可将20~22.5 GHz信号倍频至0.16~0.18 THz,为混频器提供5~10 dBm左右的本振信号。实验测试结果表明:该前端用于信号发射时,在0.34 THz频点的饱和输出功率为-14.58 dBm;用于信号检测时,最低单边带(SSB)变频损耗为10.0 dB,3 dB中频带宽约30 GHz。限于测试条件,未能测试前端接收噪声温度,仿真得到的双边带噪声温度数值低于1000 K。在该前端基础上,完成了首次基于16QAM 数字调制体制的0.34 THz无线通信实验,传输速率达3 Gb/s。     

Operational Features of a Millimeter-Wave Balanced Mixer with a Broadband Intermediate-Frequency Output

We consider operational and structural features of a millimeter-wave balanced mixer with a broadband intermediate-frequency (IF) output. In this case, the heterodyne frequency is in the close vicinity of the IF band. The problem is reduced to an increase in isolation in the heterodyne-IF circuit along with the decrease in the mixer conversion loss in the broad IF band. As a result, we realized the mixer design with the following parameters: mixer input band 26-40 GHz, IF output band 0-18 GHz, conversion loss 6-8 dB, and heterodyne-IF isolation is 10-20 dB. The mixer circuit based on a combination of waveguide-slotted, coplanar, and microstrip transmission lines is studied.     

A 385–500 GHz SIDEBAND-SEPARATING (2SB) SIS MIXER BASED ON A WAVEGUIDE SPLIT-BLOCK COUPLER

We have developed a 385–500 GHz sideband-separating (2SB) mixer, which is based on a waveguide split-block coupler at the edge of the H-plane of the 508 μm × 254 μm (WR 2.0) waveguide, for the Atacama Large Millimeter/submillimeter Array (ALMA). An RF/LO coupler, which contains an RF quadrature hybrid, two LO couplers, and an in-phase power divider, was designed with the issue of mechanical tolerance taken into account. The RF/LO coupler was measured optically with a microscope and electrically with a submillimeter vector network analyzer. The image rejection ratio (IRR) and the single-sideband (SSB) noise temperature of the receiver using the RF/LO coupler have also been measured. The IRR was found to be larger than 8 dB and typically ∼ 12 dB in the 385–500 GHz band. The SSB noise temperature of this receiver is 80 K at the band center, which corresponds to 4 times the quantum noise limit (hf/k) in SSB, and 250 K at the band edges. An erratum to this article can be found at     

A 40 GHz band SIS receiver using Nb/Al?AlOx/Nb array junctions

A 40 GHz band SIS mixer receiver has been built using Nb/Al–AlOx/Nb array junctions and a 4.3 K closed cycle helium refrigerator. The minimum conversion loss of the mixer is 2±1 dB and the single sideband receiver noise temperature (T_RX (SSB)) is as low as 110±10 K at 36 GHz. T_RX (SSB) is almost constant in the IF bandwidth of 600 MHz. The mixer saturation level is as high as 15 nW, which is comparable to the injected LO power.Nobeyama Radio Observatory (NRO), a branch of the Tokyo Astronomical Observatory, University of Tokyo, is a cosmic radio observing facility open for outside users.     

220-320 GHz Harmonic Mixer for a Full Band Sweep Vector Network Analyzer

This paper presents the design and characterization of a fixed tuned 220-320 GHz harmonic mixer employing commercial Schottky beam lead diodes in an antiparallel configuration. A diplexer provides distinct ports and matching for the subharmonic LO (26-40GHz) and the IF (20 MHz). The conversion loss was measured using a Gunn + tripler or quadrupler source calibrated with an absolute bolometer. We have built a 220-320 GHz full band sweep Vector Network Analyzer (VNA) using two WR3 waveguide couplers and three identical harmonic mixers (transmitter, reference, and receiver) pumped by two synthesizers (13-20GHz) followed by active doublers. The available dynamic range is 60 dBc/Hz over most of the band.     

A Novel Circuit Architecture for High Performance of High-order Subharmonic Mixers

A novel circuit architecture for high performance of high-order subharmonic (SH) mixers is proposed in this paper. According to the specified harmonic mixing order, one or more mixer diodes sub-arrays and corresponding power divider as well as phase shift network for RF and LO signals are arranged in the circuit. This proposed SH mixer circuit has improved conversion loss, wide dynamic range and high port isolation for high-order SH mixers. By phase cancellation of idle frequencies, the proposed SH mixer circuit can eliminate complicated design procedure of idle frequency circuits; by phase cancellation of leakage LO power to RF and IF port, and leakage RF power to LO port, the mixer circuit can get high port isolation in LO-IF/RF and RF-LO. The increased antiparallel diode pairs in each sub-array will also lead to well performance by lowering effective series resistance. The proposed SH mixer circuit can be easily realized with power divider and phase shift network for RF and LO signals. Supported in part by National Natural Science Foundation of China (NSFC) under Grants 60621002 and in part by NSFC under Grants 60471017.     

Millimeter wave monolithic schottky diode imaging arrays

Planar Schottky diodes are integrated with bow-tie antennas to form a one-dimensional array. The energy is focused onto the antennas through a silicon lens placed on the back of the gallium-arsenide substrate. A polystyrene cap on the silicon lens reduces the reflection loss. A self-aligning process with proton isolation has been developed to make the planar Schottky diodes with a 1.1-THz zero-bias cutoff frequency. The antenna coupling efficiency and imaging properties of the system are studied by video detection measurements at 94 GHz. As a heterodyne receiver, a double-sideband mixer conversion loss of 11.2 dB and noise temperature of 3770°K have been achieved at a local oscillator frequency of 91 GHz. Of this loss, 6.2 dB is attributed to the optical system and the antenna.     

An Integrated Sideband-Separating SIS Mixer Based on Waveguide Split Block for 100 GHz Band with 4.0–8.0 GHz IF

We have developed an integrated sideband-separating SIS mixer for the 100 GHz band based on the waveguide split block. The measured receiver noise temperatures with 4.0–8.0 GHz IF are less than 60 K in the LO frequency range of 90–110 GHz, and a minimum value of around 45 K is achieved at 100 GHz. The image rejection ratios are more than 10 dB in the frequency range of 90–110 GHz. We have installed the sideband-separating SIS mixer into an atmospheric ozone-measuring system at Osaka Prefecture University and successfully observed an ozone spectrum at 110 GHz in SSB mode. This experimental result indicates that the sideband-separating SIS mixer is very useful for astronomical observation as well as atmospheric observation.     

Measured mixer noise temperature and conversion loss of a cryogenic Schottky diode mixer near 800 GHz

We accurately measured the noise temperature and conversion loss of a cryogenically cooled Schottky diode operating near 800 GHz, using the UCB/MPE Submillimeter Receiver at the James Clerk Maxwell Telescope. The receiver temperature was in the range of the best we now routinely measure, 3150 K (DSB). Without correcting for optical loss or IF mismatch, the raw measurements set upper limits ofT _M=2850 K andL _M=9.1 dB (DSB), constant over at least a 1 GHz IF band centered at 6.4 GHz with an LO frequency of 803 GHz. Correction for estimated optical coupling and mismatch effects yieldsT _M=1600 K andL _M=5.5 dB (DSB) for the mixer diode itself. These values indicate that our receiver noise temperature is dominated by the corner cube antenna's optical efficiency and by mixer noise, but not by conversion loss or IF mismatch. The small fractional IF bandwidth, measured mixer IF band flatness from 2 to 8 GHz, and similarly good receiver temperatures at other IF frequencies imply that these values are representative over a range of frequencies near 800 GHz.     

V-band directional tandem coupler of monolithic uniplanar structure

We present a uniplanar coplanar-waveguide 3-dB tandem coupler operating at V-band frequencies. The uniplanar structure is monolithically fabricated by using two-section parallel-coupled lines and air-bridge crossovers replacing the conventional multilayer or bonded structures. Due to an optimized tandem structure and non-bonded crossovers minimizing the parasitic components, a maximum coupling of 2.5 dB is measured at 62 GHz with a 2 dB bandwidth of 83%, while a high directivity factor of 33 dB is simultaneously obtained at 58–62 GHz. Over the entire design frequency range of 30–90 GHz, we achieve good phase unbalance of 90 ± 6.0°, as well as return loss and isolation lower than −23 and −16 dB, respectively.     

A 400–500 GHz Balanced SIS Mixer with a Waveguide Quadrature Hybrid Coupler

We have developed a 400–500 GHz low-noise balanced SIS (Superconductor Insulator Superconductor) mixer, which is based on a waveguide RF quadrature hybrid coupler. The RF quadrature hybrid was designed and fabricated as a broadband hybrid with good performance at 4 K. The fabricated RF quadrature hybrid was measured at room temperature with a submillimeter vector network analyzer to check amplitude and phase imbalance between two output ports. Then the balanced mixer was assembled with the RF hybrid, two DSB mixers, and a 180° IF hybrid. Several important parameters such as noise temperature, LO power reduction, and IF spectra were measured. The LO power reduction is defined as how much LO power the balanced mixer saves compared with a typical single-ended mixer. The measured noise temperature of the balanced mixer was ~ 55 K at the band center which corresponds to ~ 3 times the quantum noise limit (hf/k) in DSB, and ~ 120 K at the band edges. The noise performance over LO frequency was almost the same as that of the worse DSB mixer used in the balanced mixer. In addition the LO power required for the balanced mixer is ~ 11 dB less than that of the single-ended mixers.     

180–425 GHz low noise SIS waveguide receivers employing tuned Nb/AIOx/Nb tunnel junctions

We report recent results on a 20% reduced height 270–425 GHz SIS waveguide receiver employing a 0.49 µm² Nb/AlO _x /Nb tunnel junction. A 50% operating bandwidth is achieved by using a RF compensated junction mounted in a two-tuner reduced height waveguide mixer block. The junction uses an end-loaded tuning stub with two quarter-wave transformer sections. We demonstrate that the receiver can be tuned to give 0–2 dB of conversion gain and 50–80% quantum efficiency over parts of it's operating range. The measured instantaneous bandwidth of the receiver is 25 GHz which ensures virtually perfect double sideband mixer response. Best noise temperatures are typically obtained with a mixer conversion loss of 0.5 to 1.5 dB giving uncorrected receiver and mixer noise temperatures of 50K and 42K respectively at 300 and 400 GHz. The measured double sideband receiver noise temperature is less than 100K from 270 GHz to 425 GHz with a best value of 48K at 376 GHz, within a factor of five of the quantum limit. The 270–425 GHz receiver has a full 1 GHz IF passband and has been successfully installed at the Caltech Submillimeter Observatory in Hawaii. Preliminary tests of a similar junction design in a full height 230 GHz mixer block indicate large conversion gain and receiver noise temperatures below 50K DSB from 200–300 GHz. Best operation is again achieved with the mixer tuned for 0.5–1.5 dB conversion loss which at 258 GHz resulted in receiver and mixer noise temperature of 34K and 27K respectively.     

Investigation of a heterodyne receiver with open structure mixer at 324 GHz and 693 GHz

The performance of a submillimeter heterodyne receiver using an HCOOH laser local oscillator and an open structure mixer with a Schottky barrier diode has been optimized for 693 GHz. Working at room temperature a single sideband (SSB) system noise temperature of 7,300 K, a mixer noise temperature of 6,100 K and a conversion loss of 12 dB has been achieved. The same receiver system has been investigated at 324 GHz using an HCOOD laser local oscillator yielding a noise temperature of 3,100 K (SSB), a mixer noise temperature of 2,400 K (SSB) and a conversion loss of 10 dB (SSB). An acousto-optical spectrometer has also been constructed, with 1024 channels and a channel-bandwidth of 250 kHz. The system NEP per channel was 2.5×10^–17 W/Hz^1/2 at 324 GHz and 5.0×10^–17 W/Hz^1/2 at 693 GHz.     

基于二极管精确电路模型的183GHz分谐波混频器设计

针对亚毫米波混频二极管管对电路模型不够精确的问题,采用场路结合协同分析,将进出二极管的频率信号分类处理,建立了一种应用于亚毫米波分谐波混频器电路的反向并联二极管对精确电路模型。基于获取的管对精确电路模型,建立了全局性的分谐波混频器电路的集总元件等效电路模型,设计并实现了一款183GHz分谐波混频器。测试结果表明混频器在本振频率为92GHz、功率为2mW,射频频率176~192GHz范围内,双边带变频损耗小于6.8dB,等效噪声温度小于800K,在182GHz测得最小双边带变频损耗为4.9dB,与仿真数据吻合较好。     

Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source–drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate–source and gate–drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate–drain and gate–source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.     

High performance MM-wave balanced mixers for Ka band down converters

The design and development of mm-wave fin-line and crossbar suspended stripline balanced mixer with GaAs beamlead diodes for Ka-Band downconverters is described. A conversion loss of 5.9±0.6 dB over the frequency band 32 to 36 GHz has been achieved in a crossbar stripline structure, and 6.5±0.7 dB over the frequency band 26.5 to 40 GHz in a fin-line with suspended stripline structure. Integrated circuit components, such as suspended stripline filters and transitions were also developed.     

Enhanced microwave absorption in ZnO/carbonyl iron nano-composites by coating dielectric material

The microwave absorption properties of zinc oxide/carbonyl iron composite nanoparticles fabricated by high energy ball milling were studied at 0-20 GHz. Experiments showed that ZnO as a kind of dielectric material coating carbonyl iron particles made the bandwidth of reflection loss (RL)<−5 dB expanding to the low frequency, and enhanced absorption effect obviously. For a 3 mm thickness absorber of ZnO/carbonyl iron after 30 h milling, the values of RL<−5 dB and RL<−8 dB were obtained in the frequency range from 7.0 GHz to 17.8 GHz and from 9.8 dB to 14.9 dB, respectively, and its strongest RL peak was −29.34 dB at 13.59 GHz. The magnetic loss of carbonyl iron particles and the dielectric loss of ZnO particles were the main mechanisms of microwave absorption for the composites.