Blue light emission from Eu ions in sol-gel-derived Al2O3-SiO2 glasses

Blue light-emitting glasses were successfully prepared by doping Eu²⁺ ions in the system Al₂O₃-SiO₂. The Al₂O₃-SiO₂ glasses doped with Eu³⁺ ions were synthesized using a sol-gel method, followed by heating in hydrogen gas atmosphere to reduce into the Eu²⁺ ions. The obtained glasses exhibited emission spectra with peak at ∼450 nm due to 4f⁶5d→4f⁷ (⁸S_7/2) transition, the intensities of which strongly changed depending on their glass composition and heating conditions. The emission quantum efficiency of 48% was achieved by heating the glass with the ratio of Al³⁺ to Eu³⁺ at about 6 at 1000 °C in hydrogen gas atmosphere. It was found that the Al₂O₃-SiO₂ glasses were appropriate not only for homogeneously doping the Eu³⁺ ions in glass structure but also reducing to Eu²⁺ ions, resulting in enhanced blue light-emission properties.     

Luminescence of Ca(NbO3)2:Pr at ambient and high hydrostatic pressure

In this contribution, photoluminescence and time-resolved photoluminescence spectra of Ca(NbO₃)₂ doped with Pr³⁺ obtained at high hydrostatic pressure up to 72 kbar applied in a diamond anvil cell are presented. At ambient conditions, the emission spectrum obtained in the time interval 0-1 μs is dominated by spin-allowed transitions from the ³P₀ state. On the other hand, transitions from ¹D₂, characterized by a decay time equal to 30 μs dominate the steady-state luminescence.At pressures lower than 60 kbar, the continuous wave emission spectrum consists of sharp lines peaking between 600 and 625 nm, related to the ¹D₂→³H₄ transition and three lines at 500, 550 and 650 nm related to emission transitions originating from the ³P₀ level of Pr³⁺. The emission from the ¹D₂ excited state depends weakly on the pressure. Its decay time decreases from 33 μs at ambient pressure to less than 22 μs at 68 kbar. On the other hand, the ³P₀ emission is strongly pressure dependent. At pressures of 60 kbar and higher, the Pr³⁺ emission intensity from the ³P₀ state decreases. This is accompanied by a strong shortening of the luminescence decay time.The observed pressure quenching of the f-f emission transitions and the concomitant lifetime shortening have been attributed to increasing crossover from the ³P₀ state of Pr³⁺ to a Pr³⁺-trapped exciton state.     

Effects of dopant concentrations on phosphorescence properties of Eu/Dy-doped Sr3MgSi2O8

Long afterglow Sr₃MgSi₂O₈: Eu, Dy phosphor with high brightness was prepared by sintering at high temperature and weak reductive atmosphere. The luminescent properties of this photoluminescent pigment were studied systematically by investigating concentration effects. The analytical results indicated that the main emission peaks appear at 482 nm. The excitation and emission spectra of this phosphor show that both of them are broadband. This is ascribed to the 4f⁷→4f⁶5d¹ transition of Eu²⁺ in the pigment matrix, which is in good agreement with the calculated value of 470 nm, and implies that luminescent centers Eu²⁺ occupy the deca-coordinated Sr²⁺ sites with the host of Sr₃MgSi₂O₈.     

Auger electron/X-ray photoelectron and cathodoluminescent spectroscopic studies of pulsed laser ablated SrAl2O4:Eu,Dy thin films

Auger electron/X-ray photoelectron and cathodoluminescent (CL) spectroscopic studies were conducted on pulsed laser deposited SrAl₂O₄:Eu²⁺,Dy³⁺ thin films and the correlation between the surface chemical reactions and the decrease in the CL intensity was determined. The Auger electron and the CL data were collected simultaneously in a vacuum chamber either maintained at base pressure or backfilled with oxygen gas. The data were collected when the films were irradiated for 14 h with 2 keV electrons. The CL emission peak attributed to the 4f⁶5d¹ → 4f⁷ transitions was observed at ∼521 nm and the CL intensity of the peaks degraded at different rates in different vacuum conditions. X-ray photoelectron spectroscopy (XPS) data collected from degraded films suggest that strontium oxide (SrO) and aliminium oxide (Al₂O₃) were formed on the surface of the film as a result of electron stimulated surface chemical reaction (ESSCR).     

Effect of boric acid on structure,morphology and luminescent properties of divalent europium doped calcium aluminate phosphors

Blue phosphors Ca_1 − xAl₂O₄: xEu²⁺ were prepared by high temperature solid-state method. Their structure, morphology and luminescent properties were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and fluorescence spectroscopy. The effect of different amounts of fluxing agent H₃BO₃ on structure, morphology and luminescent properties of blue phosphors Ca_1 − xAl₂O₄: xEu²⁺ luminous intensity caused by different amount of H₃BO₃ was also investigated. The amount of H₃BO₃ doped Ca_1 − xAl₂O₄: xEu²⁺ in optimal luminous intensity had been determined. The results showed that both the excitation and emission spectra of samples were all broad bands, and that the peak of emission spectra was near 442 nm, which was corresponding to the 4f⁶5d → 4f⁷ transition of Eu²⁺ illuminating blue light. Ca_1 − xAl₂O₄: xEu²⁺ (x = 3.5 mol%) could be gained with good morphology and the best luminous intensity when H₃BO₃ mass ratio was 0.5 wt%.     

Surface characterization and luminescent properties of SrAl2O4:Eu,Dy nano thin films

SrAl₂O₄:Eu²⁺, Dy³⁺ thin films were grown on Si (1 0 0) substrates in different atmospheres using the pulsed laser deposition (PLD) technique. The effects of vacuum, oxygen (O₂) and argon (Ar) deposition atmospheres on the structural, morphological and photoluminescence (PL) properties of the films were investigated. The films were ablated using a 248 nm KrF excimer laser. Improved PL intensities were obtained from the unannealed films prepared in Ar and O₂ atmospheres compared to those prepared in vacuum. A stable green emission peak at 520 nm, attributed to 4f⁶5d¹→4f⁷ Eu²⁺ transitions was obtained. After annealing the films prepared in vacuum at 800 °C for 2 h, the intensity of the green emission (520 nm) of the thin film increased considerably. The amorphous thin film was crystalline after the annealing process. The diffusion of adventitious C into the nanostructured layers deposited in the Ar and O₂ atmospheres was most probably responsible for the quenching of the PL intensity after annealing.     

Photoluminescence and EPR studies of BaMgAl10O17:Eu phosphor with blue-emission synthesized by the solution combustion method

A blue phosphor, BaMgAl₁₀O₁₇:Eu²⁺, has been synthesized in the furnace at a temperature of 500 °C by solution combustion method. The formation of the as-prepared BaMgAl₁₀O₁₇:Eu²⁺ phosphor was confirmed by the powder X-ray diffraction technique. The EPR spectrum exhibited an intense resonance signal centered at g=4.63 at 150 mT along with a number of resonances in the vicinity of g>2.0 and g<2.0. The number of spins participating in resonance (N) and the susceptibility (c) for the resonance signal at g=4.63 have been calculated as a function of temperature. The excitation spectrum of BaMgAl₁₀O₁₇:Eu²⁺ phosphor showed a strong peak near 336 nm (4f⁷ (⁸S)→5d¹(t_2g) transition) with a staircase like structure in the region 376-400 nm owing to crystal field splitting of the Eu²⁺ d-orbital. The 336 nm excitation produced a broad blue emission at 450 nm corresponding to 4f⁶5d→4f⁷ transition. PL studies reveal the two emission centers one at 450 nm and the other at 490 nm in this phosphor.     

Luminescence properties of Y2WO6:Eu incorporated with Mo or Bi ions as red phosphors for light-emitting diode applications

In this study, the red phosphors, Y₂W_1−xMo_xO₆:Eu³⁺ and Y₂WO₆:Eu³⁺,Bi³⁺, have been investigated for light-emitting diode (LED) applications. In Y₂WO₆:Eu³⁺, the excitation band edge shifts to longer wavelength with the incorporation of Mo⁶⁺ or Bi³⁺ ions. The emission spectra exhibit ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transition of Eu³⁺ ion at 588, 593, and 610 nm, respectively. Moreover, the bluish-green luminescence of the WO₆⁶⁻ at about 460 nm is observed to decrease with the incorporation of Mo⁶⁺, which results in pure red color. Thus, this study shows that the red phosphor, Y₂WO₆:Eu³⁺, incorporated with Mo⁶⁺ or Bi³⁺ ions is advantageous for LEDs applications.     

Effect of concentration on the luminescence of Eu ions in nanocrystalline La2O3

Nanocrystalline powders with various Eu³⁺ concentration (from 1 to 10 mol %) doped La₂O₃ were prepared via a combustion route. Their structure and morphology were characterized using X-ray diffraction (XRD) and High-resolution transmission electron microscopy. The emission spectra of the as-synthesized samples show that the strongest emission position is centered at 626 nm corresponding to ⁵D₀→⁷F₂ transition of Eu³⁺ ions and the intensity change of 626 nm emission is considered as a function of ultraviolet (240 nm) irradiation time. The excitation spectra at 626 nm monitoring indicate that the charge transfer state band is varies with different Eu³⁺ ion concentration. These results are attributed to the surface defects of the nanocrystals.     

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu,Dy thinfilms

SrAl₂O₄:Eu²⁺,Dy³⁺ thin films were grown on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique to investigate the effect of vacuum, oxygen (O₂) and argon (Ar) deposition atmospheres on the structural, morphological, photoluminescence (PL) and cathodoluminescence (CL) properties of the films. The films were ablated using a 248 nm KrF excimer laser. Atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and fluorescence spectrophotometry were used to characterize the thin films. Auger electron spectroscopy (AES) combined with CL spectroscopy were employed for the surface characterization and electron-beam induced degradation of the films. Better PL intensities were obtained from the unannealed films prepared in Ar and O₂ atmospheres with respect to those prepared in vacuum. A stable green emission peak at 515 nm, attributed to 4f⁶5d¹→4f⁷ Eu²⁺ transitions were obtained with less intense peaks at 619 nm, which were attributed to transitions in Eu³⁺. After annealing the films prepared in vacuum at 800 °C for 2 h, the intensity of the green emission (520 nm) of the thin film increased considerably. The amorphous thin film was crystalline after the annealing process. The CL intensity increased under prolonged electron bombardment during the removal of C due to electron stimulated surface chemical reactions (ESSCRs) on the surface of the SrAl₂O₄:Eu²⁺, Dy³⁺ thin films. The CL stabilized and stayed constant thereafter.     

Investigation of crystallographic sites of Eu in La2BaZnO5 by site-selective laser-excitation spectroscopy

La₂BaZnO₅:Eu³⁺ (0.05 mol%) was prepared by a solid-state reaction at high temperature. X-ray powder diffraction analysis confirmed the formation of single phase La₂BaZnO₅. Luminescence properties of La₂BaZnO₅:Eu³⁺ are investigated by site-selective laser-excitation and emission spectroscopy at 18 K. Two different crystallographic sites for Eu³⁺ corresponding to the La³⁺ and Ba²⁺ sites are identified from the ⁷F₀→⁵D₀ excitation spectra obtained by monitoring the ⁵D₀→⁷F_J (J=1, 2, …, 6) emissions. It is found that Eu³⁺ substituted for the Ba²⁺ ion experiences stronger crystal-field strength than Eu³⁺ substituted for the La³⁺ ion. Energy transfer between the two crystallographic Eu³⁺ centers is investigated by luminescence decay curves at 18 K.     

Synthesis and luminescent properties of Y6W2O15:Eu phosphors

In this paper, a novel phosphor, Y₆W₂O₁₅:Eu³⁺ was synthesized by thermal decomposition and phase transition of its decatungstate gel precursor. With stepwise increase of temperature to 750 °C, a crystalline phase of Y₆W₂O₁₅:Eu³⁺forms that gives intense red emission when excited at 466 nm, the emission is attributed to the Eu³⁺ ions transitions from ⁵D₀ excited states to ⁷F_J (J=0-4) ground states. The long excitation wavelength proves the Eu³⁺ transition follows the photoexcitation of the oxygen-metal (O→W lmct) charge transfer bands in yttrium tungstate. Some structural information regarding Y₆W₂O₁₅ provided by luminescence is in accord with that characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The long-wavelength excitation properties of this material may find application in the production of red phosphors for white light-emitting diodes (LEDs).     

A white light emitting phosphor Sr1.5Ca0.5SiO4:Eu, Tb, Eu for LED-based near-UV chip: Preparation, characterization and luminescent mechanism

In this work, we report preparation, characterization and luminescent mechanism of a phosphor Sr_1.5Ca_0.5SiO₄:Eu³⁺,Tb³⁺,Eu²⁺ (SCS:ETE) for white-light emitting diode (W-LED)-based near-UV chip. Co-doped rare earth cations Eu³⁺, Tb³⁺ and Eu²⁺ as aggregated luminescent centers within the orthosilicate host in a controlled manner resulted in the white-light phosphors with tunable emission properties. Under the excitation of near-UV light (394 nm), the emission spectra of these phosphors exhibited three emission bands: one broad band in the blue area, a second band with sharp lines peaked in green (about 548 nm) and the third band in the orange-red region (588-720 nm). These bands originated from Eu²⁺ 5d→4f, Tb³⁺⁵D₄→⁷F_J and Eu³⁺⁵D₀→⁷F_J transitions, respectively, with comparable intensities, which in return resulted in white light emission. With anincrease of Tb³⁺ content, both broad Eu²⁺ emission and sharp Eu³⁺ emission increase. The former may be understood by the reduction mechanism due to the charge transfer process from Eu³⁺ to Tb³⁺, whereas the latter is attributed to the energy transfer process from Eu²⁺ to Tb³⁺. Tunable white-light emission resulted from the system of SCS:ETE as a result of the competition between these two processes when the Tb³⁺ concentration varies. It was found that the nominal composition Sr_1.5Ca_0.5SiO₄:1.0%Eu³⁺, 0.07%Tb³⁺ is the optimal composition for single-phased white-light phosphor. The CIE chromaticity calculation demonstrated its potential as white LED-based near-UV chip.     

Luminescent properties of Eu-activated Sr3B2SiO8: A red-emitting phosphor for white light-emitting diodes

Single-phased Sr₃B₂SiO₈:Eu³⁺ phosphor was prepared by a solid-state method at 1020 °C. The luminescence spectra showed that Sr₃B₂SiO₈:Eu³⁺ phosphor can be effectively excited by near ultraviolet light (393 nm) and blue light (464 nm). When excited at 393 or 464 nm Sr₃B₂SiO₈:Eu³⁺ exhibited the main emission peaks at 611 and 620 nm, which resulted from the supersensitive ⁵D₀→⁷F₂ transition of Eu³⁺. The luminescence intensity of Sr₃B₂SiO₈:Eu³⁺ at 611 and 620 nm reached the maximum when the doping content of Eu³⁺ was 4.5 mol%. Its chromaticity coordinates (0.646, 0.354) were very close to the NTSC standard values (0.67, 0.33). Thus, Sr₃B₂SiO₈:Eu³⁺ is considered to be an efficient red-emitting phosphor for long-UV InGaN-based light-emitting diodes.     

Enhanced blue emission and EPR study of LaMgAl11O19:Eu phosphors

Europium doped LaMgAl₁₁O₁₉ phosphor was prepared by the combustion method. The as-prepared and post-treated (1350 °C 10 h 5% H₂+95% N₂) phosphors were investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), scanning electron microscopy (SEM), photoluminescence (PL) and electron paramagnetic resonance (EPR) techniques. XRD patterns show that LaMgAl₁₁O₁₉:Eu phosphors have hexagonal structure. FT-IR spectrum exhibits absorption bands corresponding to the stretching vibration of AlO₄ and AlO₆. Morphological studies reveal that this phosphor has faceted plates of varying sizes and shapes. The as-prepared LaMgAl₁₁O₁₉:Eu phosphor consists of both Eu³⁺ and Eu²⁺ ions. The phosphor exhibits a bright blue emission at 450 nm (4f⁶5d→4f⁷ transition of Eu²⁺). On post-treating the phosphor we are able to enhance the blue emission efficiency by 330%. The process was detected from the evolution of excitation, emission and EPR spectra and the results are discussed.     

Phosphorescent and thermoluminescent properties of SrAl2O4:Eu,Dy phosphors prepared by solid state reaction method

Long persistent SrAl₂O₄:Eu²⁺ phosphors co-doped with Dy³⁺ were prepared by the solid state reaction method. The main diffraction peaks of the monoclinic structure of SrAl₂O₄ were observed in all the samples. The broad band emission spectra at 497 nm for SrAl₂O₄:Eu²⁺, Dy³⁺ were observed and the emission is attributed to the 4f⁶5d¹ to 4f⁷ transition of Eu²⁺ ions. The samples annealed at 1100–1200 °C showed similar broad TL glow curves centered at 120 °C. The similar TL glow curves suggest that the traps responsible for them are similar. The long afterglow displayed by the phosphors annealed at different temperatures, may be attributed to the Dy³⁺ ions acting as the hole trap levels, which play an important role in prolonging the duration of luminescence.     

Investigation of 515 nm green-light emission for full color emission LaAlO3 phosphor with varied valence Eu

Photoluminescence and lifetime decay properties of varied valence Eu were employed to investigate the luminescence mechanism of green-light emission positioned at ∼515 nm for full color emission LaAlO₃ phosphor co-doped with Eu²⁺ and Eu³⁺. The enhanced ⁵D₂→⁷F₃ transition emission of Eu³⁺ was assigned for this green emission. Energy transfer between Eu²⁺ and ⁵D₂ level of Eu³⁺ was proposed, which results in the enhancement of ⁵D₂→⁷F₃ transition emission. In addition, energy transfer relations between host-Eu and charge transfer state (CTS)-Eu were also discussed associated with the PLE spectra and band schemes.     

Thermoluminescent and stuctural properties of BaAl2O4:Eu,Nd,Gdphosphors prepared by combustion method

BaAl₂O₄:Eu²⁺,Nd³⁺,Gd³⁺ phosphors were prepared by a combustion method at different initiating temperatures (400–1200 °C), using urea as a comburent. The powders were annealed at different temperatures in the range of 400–1100 °C for 3 h. X-ray diffraction data show that the crystallinity of the BaAl₂O₄ structure greatly improved with increasing annealing temperature. Blue-green photoluminescence, with persistent/long afterglow, was observed at 498 nm. This emission was attributed to the 4f⁶5d¹–4f⁷ transitions of Eu²⁺ ions. The phosphorescence decay curves were obtained by irradiating the samples with a 365 nm UV light. The glow curves of the as-prepared and the annealed samples were investigated in this study. The thermoluminescent (TL) glow peaks of the samples prepared at 600 °C and 1200 °C were both stable at ∼72 °C suggesting that the traps responsible for the bands were fixed at this position irrespective of annealing temperature. These bands are at a similar position, which suggests that the traps responsible for these bands are similar. The rate of decay of the sample annealed at 600 °C was faster than that of the sample prepared at 1200 °C.     

Structure and photoluminescence of β-Ga2O3:Eu nanofibers prepared by electrospinning

Eu³⁺-doped β-Ga₂O₃ nanofibers were fabricated by electrospinning. The influence of Eu³⁺ concentration on the photoluminescence properties of the obtained nanofibers was investigated. The morphology and structure of β-Ga₂O₃:Eu³⁺ were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and Raman spectra. The diameter of the Eu³⁺-doped β-Ga₂O₃ nanofibers was in the range of 180-300 nm. When the β-Ga₂O₃:Eu³⁺ nanofibers were excited by 325 nm wavelength, the main emission peak of the samples was 620 nm (⁵D₀→⁷F₂), which corresponded to a typical red emission (⁵D₀→⁷F_j (j = 1, 2, 3, 4) intra-4f transitions of Eu³⁺ ions). In addition, the concentration quench effect and energy transfer mechanism in β-Ga₂O₃:Eu³⁺ were also discussed.     

Synthesis and photoluminescence properties of Sm-doped CaWO4 nanoparticles

The Sm³⁺-doped CaWO₄ nanoparticles were synthesized by hydrothermal method. The room temperature photoluminescence (PL) spectra of Sm³⁺-doped CaWO₄ nanoparticles doped with different Sm³⁺ concentrations under 405 nm excitation have been investigated. The PL spectra showed four strong emission peaks at 460, 571, 609, and 653 nm. The first emission peak at 460 nm could be due to a structural defect of the lattice, an oxygen-deficient WO₃ complex. The other three emissions at 571, 609, and 653 nm were due to the f-f forbidden transitions of the 4f electrons of Sm³⁺, corresponding to ⁴G_5/2→⁶H_5/2 (571 nm), ⁶H_7/2 (609 nm), and ⁶H_9/2 (653 nm), respectively. In addition, the optimum Sm³⁺ concentration in CaWO₄ nanoparticles for optical emission was determined to be 1.0%. The Sm³⁺⁴G_5/2→⁶H_7/2 (609 nm) emission intensity of Sm³⁺-doped CaWO₄ nanoparticles significantly increased with the increase of Sm³⁺ concentration, and showed a maximum when Sm³⁺ doping content was 1.0%. If Sm³⁺ concentration continued to increase, namely more than 1.0%, the Sm³⁺⁴G_5/2→⁶H_7/2 emission intensity would decrease. The present materials might be a promising phosphor for white-light LED applications.