Resolution enhancement at a large convergence angle by a delta corrector with a CFEG in a low-accelerating-voltage STEM

Resolution reduction by a diffraction limit becomes severe with an increase in the wavelength of an electron at a relatively low accelerating voltage. For maintaining atomic resolution at a low accelerating voltage, a larger convergence angle with aberration correction is required. The developed aberration corrector, which compensates for higher-order aberration, can expand the uniform phase angle. Sub-angstrom imaging of a Ge [1 1 2] specimen with a narrow energy spread obtained by a cold field emission gun at 60 kV was performed using the aberration corrector. We achieved a resolution of 82 pm for a Ge–Ge dumbbell structure image by high angle annular dark-field imaging.     

Using an improved electrostatic precipitator for poultry dust removal

Pubic concerns related to particulate matter emissions from animal housing operations are increasing. The goal of this study was to custom develop a simple and low cost electrostatic precipitator (ESP) for poultry dust control. The performance of the improved electrostatic precipitator (iESP) to remove a test aerosol was evaluated under a series of operating voltages between ?60 kV and 60 kV. The mass and size distributions of the particles were measured by a cascade impactor. The overall dust removal efficiency ranged from 37% to 79% with the maximum efficiency obtained at ?30 kV. The iESP shows high removal efficiencies for particles less than 2.1 μm.     

Electron-energy-loss spectroscopy of C60 monolayer films on active and inactive surfaces

The characteristics of interaction between C₆₀ molecules and Si(1 1 1)-7×7, Ag/Si(1 1 1)-√3×√3 R30° and layered material MoS₂ surfaces have been investigated using electron-energy-loss spectroscopy (EELS). The EEL spectrum of C₆₀/Si(1 1 1)-7×7 shows a new peak at loss energy of 2.7 eV. This indicates the existence of charge transfer from the substrate to C₆₀ molecules. The EEL spectrum of a C₆₀ monolayer film grown on a cleaved surface of MoS₂ is almost the same as that of bulk C₆₀. The EEL spectrum of a C₆₀ monolayer film on an Ag/Si(1 1 1) surface is quite different from that on a clean Si(1 1 1)-7×7 surface, although the films on those substrates have the same epitaxial arrangement. Furthermore, intensities of energy-loss peaks of C₆₀/Ag/Si(1 1 1) are slightly smaller than those of C₆₀/MoS₂ in spite of having the same loss-energy. This suggests that the interaction between C₆₀ molecules and the Ag/Si(1 1 1) surface is stronger than that between C₆₀ molecules and the MoS₂ surface.     

Chromatic aberration free liquid crystal adaptive optics for flood illuminated retinal camera

A high-resolution, flood-illumination retinal camera using liquid crystal (LC) adaptive optics (AO) is presented. The retinal camera uses light at 780 nm for ocular aberration measurement while light at 655 nm and 593 nm for retinal imaging. In order to avoid chromatic aberrations due to wavelength dependence of LC, we adopt an open-loop technique, in which dynamic correction of aberrations is applied only to the imaging light. A compensation pattern projected on the LC wavefront corrector is adjusted to provide phase wrapping of 2 π for illumination light. We confirmed feasibility of this technique by performing in vivo retinal imaging experiments. Photoreceptors were clearly revealed at both imaging light at 655 nm and 593 nm. Feasibility of the technique was also supported by comparison of the retinal images taken by the present open-loop technique with those taken by the conventional closed-loop one and by analysis of the spatial distribution of the photoreceptors.     

The adsorption and reconstruction of strong electron acceptor tetracyanoethylene (TCNE) on Si(001)-(2 × 1): A density functional theory investigation

The adsorption and reconstruction of strong electron-acceptor TCNE on the Si(001)-(2 × 1) surface are investigated by density functional theory (DFT). The results show that TCNE prefers to adsorb on the trench between two adjacent dimer rows and the CC double bond is parallel to dimer rows. Charge density difference calculation and Bader charge analysis indicate that abundant negative charge transfers from dimer Si to TCNE. Strong interaction makes it difficult for TCNE to move on Si(001), which is confirmed by nudged elastic band (NEB) analysis. In addition, the correlations between simulated STM images and molecular orbitals are discussed and two surface reconstructions of (2 × 1) and (4 × 2) are predicted at different TCNE coverages.     

Real time dynamics of Si magic clusters mediating phase transformation: Si(111)-(1 × 1) to (7 × 7) reconstruction revisited

Using Scanning Tunneling Microscope (STM), we show that the surface undergoes phase transformation from disordered “1 × 1” to (7 × 7) reconstruction which is mediated by the formation of Si magic clusters. Mono-disperse Si magic clusters of size ~ 13.5 ± 0.5 Å can be formed by heating the Si(111) surface to 1200 °C and quenching it to room temperature at cooling rates of at least 100 °C/min. The structure consists of 3 tetra-clusters of size ~ 4.5 ? similar to the Si magic clusters that were formed from Si adatoms deposited by Si solid source on Si(111)-(7 × 7) [1]. Using real time STM scanning to probe the surface at ~ 400 °C, we show that Si magic clusters pop up from the (1 × 1) surface and form spontaneously during the phase transformation. This is attributed to the difference in atomic density between “disordered 1 × 1” and (7 × 7) surface structures which lead to the release of excess Si atoms onto the surface as magic clusters.     

Second-order non-linear optical studies on CdS microcrystallite-doped alkali borosilicate glasses

CdS microcrystal-doped alkali borosilicate glasses were prepared by conventional fusion and heat-treatment method. Utilizing Maker fringe method, second-harmonic generation (SHG) was both observed from CdS-doped glasses before and after certain thermal/electrical poling. While because the direction of polarization axes of CdS crystals formed in the samples is random or insufficient interferences of generated SH waves occur, the fringe patterns obtained in samples without poling treatments showed no fine structures. For the poled samples, larger SH intensity has been obtained than that of the samples without any poling treatments. It was considered that the increase of an amount of hexagonal CdS in the anode surface layer caused by the applied dc field increased the SH intensity. The second-order non-linearity χ⁽²⁾ was estimated to be 1.23 pm/V for the sample poled with 2.5 kV at 360 °C for 30 min.     

Comparative PEEM and AES study of surface morphology and composition of Cu films on Si and 3C–SiC substrates

We have conducted photoemission electron microscope (PEEM) and Auger electron spectroscopy (AES) studies on the Cu(30 nm)/3C–SiC(1 0 0) and Cu(30 nm)/Si(1 0 0) samples annealed successively up to 850 °C. With PEEM, lateral diffusion of Cu atoms on the 3C–SiC substrate was observed at 400 °C while no lateral diffusion was seen for the Cu/Si(1 0 0) samples up to 850 °C. The 30 nm Cu thin film on 3C–SiC began to agglomerate at 550 °C, similar to the case for the Cu/Si(1 0 0) system. No further spread of the lateral diffusion region was found in subsequent annealing up to 850 °C for Cu/3C–SiC while separated regular-sized dot structures were found at 850 °C for Cu/Si(1 0 0). AES studies of Cu/Si(1 0 0) system showed partial interface reaction during Cu deposition onto the Si(1 0 0) substrate and oxidation of the resultant Cu₃Si to form SiO₂ on the specimen surface at room temperature in air. Surface segregation of Si and C was observed after annealing at 300 °C for Cu/Si(1 0 0) and at 850 °C for the Cu/3C–SiC system. We have successfully elucidated the observed phenomena by combining PEEM and AES considering diffusion of the constituent elements and/or reaction at interfaces.     

Design and evaluation of a unipolar aerosol charger to generate highly charged micron-sized aerosol particles

In this study, a unipolar charger for generating highly charged microparticles was designed and its performance was evaluated both theoretically and experimentally. The measured particle charge number and corona current of the charger were in good agreement with the theoretical results from FLUENT. The experimentally determined average particle charge number of 1 μm PSL under an applied voltage of 8 kV was 128, which agreed well with the theoretically predicted and simulated values of 118 and 121, respectively. Computational calculations revealed the average charge of 10 μm particles to be 7560 at an applied voltage of 8 kV.     

Analysis of multimode BDK doped POF gratings for temperature sensing

We report a temperature sensor based on a Bragg grating written in a benzil dimethyl ketal (BDK) doped multimode (MM) polymer optical fiber (POF) for the first time to our knowledge. The thermal response was further analyzed in view of theory and experiment. In theory, with the order of the reflected mode increasing from 1st to 60th order, for MM silica fiber Bragg grating (FBG) the temperature sensitivity will increase linearly from 16.2 pm/°C to 17.5 pm/°C, while for MM polymer FBG the temperature sensitivity (absolute value) will increase linearly from ?79.5 pm/°C to ?104.4 pm/°C. In addition, temperature sensitivity of MM polymer FBG exhibits almost 1 order larger mode order dependence than that of MM silica FBG. In experiment, the Bragg wavelength shift will decline linearly as the temperature rises, contrary to that of MM silica FBG. The temperature sensitivity of MM polymer FBG is ranged from ?0.097 nm/°C to ?0.111 nm/°C, more than 8 times that of MM silica FBG, showing great potential used as a temperature sensor.     

First-principles investigations of low-coverage Ca-induced reconstructions on the Si(001) surface

Using the pseudopotential method and the local density approximation of density functional theory we have investigated the stability, atomic geometry, and electronic states for low-coverage Ca adsorbates on the Si(001) surface within the (2 × n) reconstructions with n = 2, 3, 4, 5. Our total energy calculations suggest that the (2 × 4) phase represents the most energetically stable structure with the Ca coverage of 0.375 ML. Within this structural model, each Ca atom is found to form a bridge with the inner two Si–Si dimers. The inner Si–Si dimers become elongated and symmetric (untilted). The band structure calculation indicates that the system is semiconducting with a small band gap. Significant amount of charge transfer from the Ca atoms to neighbouring Si atoms has been concluded by analysing the electronic charge density and simulation of scanning tunnelling microscopy images. The highest occupied and lowest unoccupied electronic states are found to arise from the inner and outer Si–Si dimer components, respectively.     

The diamagnetic susceptibility of hydrogenic donor in two-dimensional semiconductors with anisotropic effective mass of carriers

In this study, the effects of quantum confinement and effective mass anisotropy parameter on the diamagnetic susceptibility of a hydrogenic donor placed in GaAs, Si, and Ge quantum wells with infinite confinement potential are investigated in the effective mass and parabolic band approximations by using two and one parameter trial wave functions. It is observed that the diamagnetic susceptibility of a hydrogenic donor in anisotropic quantum wells is essentially equal to the transverse diamagnetic susceptibility part when well widths are larger than L > 100 Å, and the impurity is located at center. Moreover, a two parameter trial wave function model gives higher values of diamagnetic susceptibility, except for χ_z (GaAs).     

Self-assembly of C60 fullerenes on quasi-one-dimensional Si(111)4 × 1-In surface

Using scanning tunneling microscopy observations, self-assembly of C₆₀ fullerenes in the course of room-temperature adsorption onto Si(111)4 × 1-In reconstruction and after subsequent annealing at temperatures ranging from 150 to 450 °C has been studied. Adsorbed C₆₀ fullerenes have been found to occupy off-centered positions on In-atom rows forming linear chains with a maximal length of eight C₆₀ molecules. Intermolecular spacing within the regular chains equals three lattice constants of Si(111) surface. Two energetically different adsorption states of C₆₀ have been detected, one of which is occupied preferentially at room temperature, while occupation of the second (more tight) state dominates at temperature above ~ 150 °C. In the first state, C₆₀ fullerene resides plausibly in a continuous rotation, while in the second state a C₆₀ molecule is fixed tightly in a single orientation with a C₆₀ hexagon pointing upward. Transition of C₆₀ fullerenes to the more stable state is accompanied by expelling In atoms from the Si(111)4 × 1-In reconstruction.     

18.2 nm Schwarzschild microscope for diagnostics of hot electron transport

Schwarzschild microscope at 18.2 nm for diagnostics of hot electron transport in femtosecond laser-plasma interaction has been developed. Based on the third-order aberration theory the microscope is designed for numerical aperture of 0.1 and magnification of 10. Mo/Si multilayer films with peak throughput at 18.2 nm is designed and deposited by magnetron sputtering method. The 24 lp/mm copper mesh is imaged via Schwarzschild microscope, and resolutions of less than 3 μm are measured in 1.2 mm field. The diagnostics experiment of hot electron transport is performed on 286 TW SILEX-I laser facilities, and the spatial distribution of radiation caused by hot electron is imaged by Schwarzschild microscope.     

Room-temperature deposition of group III metals on Si(1 0 0): A comparative study of nucleation behavior

In this paper, we compare and contrast the processes of nucleation and subsequent growth of single-atom wide metal chains formed when group III metals (Al, Ga, In) are deposited onto Si(1 0 0) at room-temperature (RT). Employing Density Functional Theory (DFT) calculations, diffusion pathways on Si(1 0 0) surface are identified and their associated activation barriers are calculated. Then, the relative stabilities of various C-defect-pinned chains are examined by comparing the relevant adsorption energies. We also account for the observation that defect-nucleated chains grow on only one side of a C-defect by showing that the latter’s presence breaks the symmetry between the two previously equivalent binding sites on either side and rendering one much more stable than the other. Next, a growth model tailored for each group III metal/Si(1 0 0) system and incorporating the above results was simulated using Kinetic Monte Carlo (KMC) techniques to show that the surface morphologies generated by this model accurately reflect the observed ratio of homogeneously to heterogeneously nucleated chains. Finally, we examine through KMC simulations the consequences of the contrasting roles of a defect on In/Si(1 0 0) and Al/Si(1 0 0) – it captures adatoms in the former while it merely blocks direct adatom diffusion in the latter – on key quantities such as the mean island density.     

Fabry–Pérot cavities based on chemical etching for high temperature and strain measurement

In this paper, two hybrid multimode/single mode fiber Fabry–Pérot (FP) cavities were compared. The cavities fabricated by chemical etching are presented as high temperature and strain sensors. In order to produce this FP cavity a single mode fiber was spliced to a graded index multimode fiber with 62.5 μm core diameter. The Fabry–Pérot cavities were tested as a high temperature sensor in the range between room temperature and 700 °C and as strain sensors. A reversible shift of the interferometric peaks with temperature allowed to estimate a sensitivity of 0.75 ± 0.03 pm/°C and 0.98 ± 0.04 pm/°C for the sensor A and B respectively. For strain measurement sensor A demonstrated a sensitivity of 1.85 ± 0.07 pm/μ? and sensor B showed a sensitivity of 3.14 ± 0.05 pm/μ?. The sensors demonstrated the feasibility of low cost fiber optic sensors for high temperature and strain.     

An STM study of desorption-induced thallium structures on the Si(111) surface

The scanning tunneling microscopy is used to study morphology of a Tl adlayer in various stages of Tl desorption from the Si(111) surface. Transition from the Si(111)/(1 × 1)-Tl structure through the (√3 × √3)R30° mosaic phase to domains of metastable Si reconstructions is observed. Silicon substitutional atoms are found to be intrinsic to the (√3 × √3)R30° structure. The temperature dependence of the amount of residual Tl atoms on the surface is successfully fitted by a model using the first order desorption. The same desorption energy of (2.1 ± 0.3) eV and frequency prefactor 5 × 10^14 ± 2 s^? 1 during all stages of the desorption are sufficient for the fitting. It is concluded that bonding of Tl in both (1 × 1) and (√3 × √3) configurations is of the same nature.     

EPR and UV spectroscopic investigations of sucrose irradiated with heavy-ion particles

Crystalline sucrose irradiated with C and Si ions is investigated with EPR and UV spectroscopy. Samples are treated at different doses of radiation in the region 20–300 Gy and linear energy transfer (LET) values of 39.6, 49 and 58 keV μm^?1 for C ions and 60 keV μm^?1 for Si ions. All samples exhibit identical EPR spectra due to radiation-induced stable sucrose radicals. At given constant LET the EPR signal responses are linear to the absorbed doses of Si and C ions. Water solutions of irradiated sucrose exhibit UV absorption maximum at 267 nm due to the product of radical recombination. The intensity of this band is stronger at irradiation with Si than with C ions. UV absorption is more sensitive to heavy-ion species irradiation than the EPR signals.     

New evaluation of fullerene molecules on Si(111)-(7 × 7) reconstructed structure using non-contact scanning non-linear dielectric microscopy

Fullerene (C₆₀) molecules on an Si(111)-(7 × 7) surface have been investigated using non-contact scanning non-linear dielectric microscopy (NC-SNDM) under an ultra-high vacuum. The topography, the interface between the C₆₀ molecule and Si adatoms, and the internal structure of the C₆₀ molecules were successfully investigated. For ～ 0 ML and ～ 0.4 ML coverage, both phase reversal sites and sites without phase reversal could be observed in the first order phase (θ1) image. On the other hand, for 1 ML coverage, phase reversal could not be identified. These results indicate that charge transfer only occurred from Si adatoms to C₆₀ molecules at three-fold symmetric sites on the Si(111)-(7 × 7) surface, and the electric dipole moment is reflected in the electronic state of the C₆₀ molecules. The internal structure of C₆₀ molecules was clearly observed in topography by the second order amplitude (A₂) feedback signal for 1 ML coverage, reflecting the LDOS originating from the t_1u orbital.     

Interaction of Ag with the Si(1 1 1)1 × 1–H surface

Synchrotron radiation based photoemission spectroscopy (SRPES) and low energy electron diffraction (LEED) are used to study the interaction between Ag atoms and the Si(1 1 1)1 × 1–H surface. At an Ag coverage of 0.063 monolayers (ML) on the Si(1 1 1)1 × 1–H surface, the Si 2p component corresponding to Si–H bonds decreases, and an additional Si 2p component appears which shifts to a lower binding energy by 109 meV with respect to the Si bulk peak. The new Si 2p component is also observed for 0.25 ML Ag on the Si(1 1 1)7 × 7 surface. These findings suggest that Ag atoms replace the H atoms of the Si(1 1 1)1 × 1–H surface and form direct Ag–Si bonds. Contrary to the widely accepted view that there is no chemical interaction between Ag particles and the H-passivated Si surface, these results are in good agreement with recent first-principles calculations.