Preparation of nanocrystalline TiO2 thin film at low temperature and its application in dye-sensitized solar cell

The electrophoretic deposition combined with common pressure hydrothermal treatment was employed to prepare nanocrystalline TiO₂ thin film from suspension of tetra-n-butyl titanate and P25 at low temperature. The tetra-n-butyl titanate was hydrolyzed and crystallized into anatase to interconnect nanocrystalline TiO₂ particles and to stick them to a conductive substrate by common pressure hydrothermal treatment to improve the electron transport properties of the deposited thin film. A dye-sensitized solar cell based on TiO₂ thin film prepared by the low temperature method yielded the conversion efficiency of 6.12%. Due to the relative slower electron transport rate in the deposited film, its conversion efficiency was slightly lower than that of the cell with TiO₂ thin film prepared by the conventional high temperature sintering method. Since it is free of high temperature sintering step, this method can be used to prepare nanocrystalline TiO₂ thin film on plastic polymer conductive substrate for fabrication of flexible dye-sensitized solar cell.     

Optical and morphological characterization of bispyrazole thin films for gas sensing applications

The optical gas recognition capabilities of thin film layer of 4-[bis[(3,5-dimethyl-1H-pyrazol-1-yl)methyl]-amino]phenol deposed on quartz substrates were studied. The dynamic gas responses to the following analytes have been investigated as air pollutants (SO₂, NO₂, CO, CH₄ and NH₃). The spin-coated bispyrazole layer appears to have reversible response towards SO₂ and a very low and irreversible response to NO₂. The selectivity of the thin film based on bispyrazole layer with respect to other analytes was also examined and the present data show that the thin sensing layer in the presence of CO, CH₄ and NH₃ in low concentration does not influence its optical properties.     

Preparation and characterization of In<Subscript>2</Subscript>S<Subscript>3</Subscript> semiconductor thin films using the sol–gel method

This study describes the In₂S₃ semiconductor thin film coating on glass substrate by sol–gel method. The In₂S₃ thin film samples were prepared and examined by the X-ray diffraction (XRD), the UV–visible optical absorption and transmission study, and the Scanning Electron Microscope (SEM) image analyses. The XRD analysis results show that the In₂S₃ semiconductor thin films prepared by sol–gel method is formed at T~360–520 °C temperature interval. Band gap energy and optical absorption spectrum analysis of the In₂S₃ thin films reveal that Eg~2.51 eV for the In₂S₃ thin films. According to the EDX result the film was In-rich with the In/S = 1.42 ratio. The thickness of prepared In₂S₃ layer is about 400 nm.     

Layer‐by‐Layer Assembled Conductive Metal–Organic Framework Nanofilms for Room‐Temperature Chemiresistive Sensing

The utility of electronically conductive metal–organic frameworks (EC‐MOFs) in high‐performance devices has been limited to date by a lack of high‐quality thin film. The controllable thin‐film fabrication of an EC‐MOF, Cu₃(HHTP)₂, (HHTP=2,3,6,7,10,11‐hexahydroxytriphenylene), by a spray layer‐by‐layer liquid‐phase epitaxial method is reported. The Cu₃(HHTP)₂ thin film can not only be precisely prepared with thickness increment of about 2 nm per growing cycle, but also shows a smooth surface, good crystallinity, and high orientation. The chemiresistor gas sensor based on this high‐quality thin film is one of the best room‐temperature sensors for NH₃ among all reported sensors based on various materials.     

Extending spectrum response of squaraine-sensitized solar cell by Förster resonance energy transfer

To extend the spectral response region of squaraine dye (SQ)-sensitized solar cell, eosin Y (EY) is encapsulated in the SQ-sensitized nanocrystalline thin film. EY is first adsorbed on nanocrystalline TiO₂ thin film (n-TiO₂), then a thin layer of EY contained ZnO (EY-ZnO) is electrodeposited, and SQ dye is finally sensitized to form two dye-sensitized nanocrystalline thin film with a structure of n-TiO₂/EY/EY-ZnO/SQ. There is a perfect spectral overlap between the emission of EY and the absorption of SQ; EY as an energy donor simultaneously transfers both electron and hole to the energy acceptor SQ according to the Förster resonance energy transfer (FRET) process. EY shifts the spectral response edge of SQ-sensitized solar cell toward blue from 550 to 450 nm through the FRET process in this new structure. Two dye-sensitized nanocrystalline thin film demonstrates a significant enhancement in light harvesting and photocurrent generation due to the FRET process. The thickness of the EY-ZnO thin layer and spectral overlap between emission of donor dye and absorption of acceptor dye are two important factors that affect the FRET process between EY and SQ in the structure of n-TiO₂/EY/EY-ZnO/SQ.     

Influence of YSZ buffer layer on the electric properties of compositionally graded (Ba,Sr)TiO<Subscript>3</Subscript> thin film

Compositionally graded Ba_1−x Sr _x TiO₃ (BST) (0 ≤ x ≤ 0.4) thin films were fabricated on Pt/Ti/SiO₂/Si and YSZ/Pt/Ti/SiO₂/Si substrates by a modified sol–gel technique. The YSZ buffer layer was prepared by RF magnetron sputtering. The microstructure of the graded BST films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The results showed that all the films have uniform and crack-free surface with a perovskite structure. The graded BST film with an YSZ buffer layer has larger dielectric constant and lower dielectric loss. The leakage current density of the graded BST film with an YSZ buffer layer lowers two orders than the film without buffer layer. The improved electric properties of the graded films with an YSZ buffer layer was attributed to the YSZ buffer layer act as an excellent seeding layer to enhance the graded BST film growth.     

Thermal and structural studies of two new TlI three-dimensional coordination polymers, [Tl2(μ-CSB)] n and [Tl2(μ-ADC)] n,CSB2− =4-[(4-carboxyphenyl)sulfonyl]-1-benzenecarboxylate and ADC2− =acetylendicarboxylate

Two new 3D coordination polymers, [Tl₂(μ₁₀-CSB)] _n (1) [CSB?=?4-[(4-carboxyphenyl)sulfonyl]-1-benzenecarboxylate] and [Tl₂(μ₉-ADC)] _n (2) [ADC?=?acetylendicarboxylate], have been synthesized and characterized by elemental analysis, and IR spectroscopy. Thermal behavior and structures of 1 and 2 have been studied. Single-crystal X-ray data of 1 show that the thallium atoms have an irregular coordination sphere containing a stereochemically active lone pair with TlO₅ environment. The single-crystal X-ray data of 2 showed that there are two different Tl environments. One Tl is six-coordinate with a weak Tl?···?Tl interaction with a distance of 3.904?Å. The other type of Tl in the TlO₅C₂Tl units is eight-coordinate with one weak Tl?···?Tl and two short Tl?···?C interactions.     

Molecular Assembly by Sequential Ionic Adsorption of Nanocrystalline TiO2 and a Conjugated Polymer

Abstract

Cationic nanocrystalline TiO₂ particles have been synthesized for which the size and composition of the nanoparticles were analyzed by a transmission emission microscopy and energy dispersive x‐ray spectrometer (EDXS). Multilayered films have been fabricated by sequential adsorption of TiO₂ nanoparticles and poly(3‐thiophene acetic acid) (PTAA). Each layer of the nanoparticles and PTAA in the thin film has also been characterized by x‐ray photoelectron spectroscopy, atomic force microscopy, and UV‐visible spectroscopy. These types of multilayered nanocomposite films may find applications in the fabrication of efficient light harvesting photovoltaic cells.     

Electrodeposition of Thin Cu–Cd–Se Film Layers

The formation of ternary Cu–Cd–Se thin film layers on a polycrystalline Pt electrode during the voltammetric scanning is examined. A sulfuric acid matrix containing selenious acid and uncomplexed Cu²⁺ and Cd²⁺ ions is used in all the cases. The growth kinetics is monitored by cyclic voltammetric measurements. The composition and structure are analyzed by XRD and ex situ Auger electron spectroscopy techniques. An underlying electrodeposition mechanism is proposed for the ternary system formation. It is shown that the growth process has a multistage character. Cu–Cd–Se film layers up to 2.5 m are obtained on a polycrystalline Pt cathode by potentiostatic electrolysis at E = 0.05 V (SHE). The chemical composition of the obtained layer is 39.1, 10.6, and 50.3 at. % Cu, Cd, and Se, respectively.     

Investigation of interfacial processes in graphite thin film anodes of lithium-ion batteries by both in situ and ex situ infrared spectroscopy

Graphite thin film anodes with a high IR reflectivity have been prepared by a spin coating method. Both ex situ and in situ microscope FTIR spectroscopy (MFTIRS) in a reflection configuration were employed to investigate interfacial processes of the graphite thin film anodes in lithium-ion batteries. A solid electrolyte interphase layer (SEI layer) was formed on the cycled graphite thin film anode. Ex situ MFTIRS revealed that the main components of the SEI layer on cycled graphite film anodes in 1 mol L -1 LiPF6 /ethylene carbonate + dimethyl carbonate (1:1) are alkyl lithium carbonates (ROCO2 Li). The desolvation process on graphite anodes during the initial intercalation of lithium ion with graphite was also observed and analyzed by in situ MFTIRS.     

表面修饰的TiO_2太阳能电池界面特性研究

用水热法制备了具有典型锐钛矿晶型的TiO2纳米材料,采用Cr(NO3)3对TiO2薄膜电极进行修饰改性。用X射线衍射(XRD)、扫描电子显微镜(SEM)和光电子能谱(XPS)测试电极的物相及表面结构,结果显示TiO2薄膜表面包覆一层粒径较大的氧化铬颗粒,整个电极仍保持均匀的多孔结构。电流-电压(I-V)曲线测试结果显示,改性后最佳电极的短路电流和光电转换效率分别比改性前提高了31.1%和40.4%。用电化学阻抗谱(EIS)测试电池的界面特性,从测试结果可以看出,相同偏压下,改性后电池的TiO2/染料/电解质界面电阻更大,说明氧化铬包覆层在一定程度上抑制了界面的电子复合,改善了电池的光电输出特性。     

Optimization of large area pulsed laser deposition of YBaCuO thin films by SNMS depth profiling and rutherford backscattering

The scaling up of established deposition techniques like pulsed laser deposition (PLD) to larger substrate diameter is a main condition for the technological application of high-T_c superconducting (HTSC) thin films. SNMS depth profiling and RBS have been used to control the homogeneity of film thickness and stoichiometry of Au/YBaCuO/CeO₂ thin film systems deposited on 3-inch sapphire wafers by PLD. A systematic dependence has been found for the relative SNMS sensitivity factors (RSF) on the structural state of YBaCuO. Therefore, a calculation of the composition of the epitaxial YBaCuO thin films is not possible using RSF determined from polycrystalline YBaCuO target material. The interdiffusion of thin films and substrate has been investigated in dependence on the deposition temperature by SNMS depth profiling. The obtained homogeneity of film thickness and stoichiometry over the entire 3-inch diameter proofs the suitability of PLD for in-situ deposition of 3-inch wafers by YBaCuO thin film systems for microwave applications.     

Ultrathin polymer gate buffer layer for air‐stable,low‐voltage,n‐channel organic thin‐film transistors

An ultrathin poly(methyl methacrylate) (PMMA) buffer layer was developed to improve the performance of n‐channel organic thin‐film transistors (OTFTs). The 8 nm‐thick PMMA film, prepared by spin‐coating, provided a very smooth surface and a uniform coverage on SiO₂ surface reproducibly, which was confirmed by X‐ray reflectivity (XR) measurement. Then, we fabricated N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide (PTCDI‐C13) thin‐film transistors with and without this 8 nm‐thick PMMA insulating layer on SiO₂ gate insulators and achieved one‐order increase of field‐effect mobility (up to 0.11 cm²/(Vs) in a vacuum), one‐half decrease of threshold voltage, and reduction of current hysteresis with the PMMA layer. Only TFTs with the PMMA layer displayed n‐channel operation in air and showed field‐effect mobility of 0.10 cm²/(Vs). We consider that electrical characteristics of n‐channel OTFTs were considerably improved because the ultrathin PMMA film could effectively passivate the SiO₂ insulator surface and decrease interfacial electron traps. This result suggests the importance of the ultrathin PMMA layer for controlling the interfacial state at the semiconductor/insulator interface and the device characteristics of OTFTs. Copyright © 2009 John Wiley & Sons, Ltd.     

Fabrication of Stable Chiral Polyaniline Nanocomposite‐Based Patterns

Summary: We report an artful method to form a stable pattern of chiral polyaniline nanocomposites (CPANs). It consists of the preparation of a diazoresin (DR)/poly(acrylic acid) (PAA) thin buffer layer on an Si substrate by self‐assembly, followed by the deposition of a multi‐layer film by spin‐assembly, leading to the formation of a (DR/PAA)₂DR/(CPAN/DR)_n film on the substrate. After selective exposure to UV light through a photomask and the development process, a defined pattern is formed.

Scanning electron microscopy image of the patterned (CPAN/DR)₅ thin film on Si wafer.     

Preparation of CuInS2 Thin Film Using Sulfides Nanoparticle Precursor Ink

A low cost spin coating route of fabricating CuInS₂ polycrystalline thin films by reactive sin-tering method was put forward. The ink for spin coating was optimized by pre-reducing the precursor powders in hydrogen, which turned the nanoparticle precursor powders from mixed sulfides into a mixture of CuInS₂ and Cu-In metal alloys. The results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and Raman spectra showed that this optimization could highly improve the performance of CuInS₂ polycrystalline thin films, including higher packing density, less impurity phases, and better quality. The en-ergy gap of optimized CuInS₂ thin film was determined to be about 1.45 eV by absorption spectroscopy measurement.     

Anti-Reflective Coatings for CRTs by Sol-Gel Process

Two types of anti-reflective coatings composed of nano-particles were developed for cathode ray tubes (CRTs). The anti-reflective and anti-static coating is composed of two layers. An outer SiO₂ layer is formed over a porous inner layer composed of titanium oxynitride (TiO _x N_y), antimony-doped tin oxide (ATO) and SiO₂. To control the reflection of the film, a porous structure is formed using a mixed sol composed of TiO _x N _y -ATO particles and hydrolyzed-polymerized tetraethoxy-silane (TEOS). The resulting double layered coating is shown to consist in a nanocomposite pseudo three-layer structure. The antireflective electromagnetic-wave-shielding coating is also composed of two layers. An outer SiO₂ layer is formed over an electric-conductive inner layer composed of silver colloids, TiO _x N _y nano particles. Silver colloids are used to obtain a film having low surface resistivity and TiO _x N _y nano-particles contained in the inner layer enhance the durability of the film. To reduce the plasma-resonance absorption caused by silver colloids, silver ions are added to the outer layer solution. The silver ions diffuse into the inner layer from the outer layer when the film is cured, touch to the surface of silver colloids, suppress the silver colloid growth and reduce the specific absorption of the film. These coatings are successfully applied to the panel glass for CRTs on an industrial scale.     

Impact of substrate on some physical properties of PrFe0.5Ni0.5O3 thin films

We carried out the structural, morphological and transport study of PrFe_0.5Ni_0.5O₃ thin films prepared by pulsed laser deposition (PLD) over various substrates. Different substrates like LaAlO₃ (001),GaAs(001) and Si(001) were used for deposition to understand effect of lattice mismatch on various physical properties. The film deposited on LaAlO₃ was of best quality with well (001)-oriented and having good crystalline properties. Whereas, film deposited on GaAs(001) is well textured. Both films shows semiconducting behavior and resistance of the film deposited on GaAs(001) shows larger than that of film deposited on LAO. However, film deposited on Si, also shows polycrystalline growth with unusual metallic behavior. We tried to correlate this behavior with strain-induced growth of these films. Other possibilities for this unusual trend is also explored.     

The impact on the magnetic field growth of half-metallic Fe3O4 thin films

Half-metallic Fe₃O₄ films grown on a Si (100) substrate with a tantalum (Ta) buffer layer were prepared by DC magnetron reactive sputtering. Primary emphasis was placed on magnetic field growth of Fe₃O₄ thin film. The experiment's results showed that applying an external magnetic field to the samples during the growth was efficient to promote the polycrystalline Fe₃O₄ growth along certain directions. The magnetoresistance (MR) was also tested for comparison of the samples prepared with and without an external magnetic field, and showed that applying an external magnetic field can promote the MR values.     

In CH3NH3PbI3 Perovskite Film,the Surface Termination Layer Dominates the Moisture Degradation Pathway

Theoretical studies have shown that surface terminations, such as MAI or PbI layers, greatly affect the environmental stability of organic–inorganic perovskite. However, until now, there has been little effort to experimentally detect the existence of MAI or PbI terminations on MAPbI₃ grains, let alone disclose their effects on the humidity degradation pathway of perovskite solar cell. Here, we successfully modified and detected the surface terminations of MAI and PbI species on polycrystalline MAPbI₃ films. MAI-terminated perovskite film followed the moisture degradation process from MAPbI₃ to hydrate MAPbI₃⋅H₂O and then into PbI₂, with penetration of water molecules being the main driving force leading to the degradation of MAPbI₃ layer by layer. In contrast, for the PbI-terminated perovskite film in a humid atmosphere, a deprotonation degradation pathway was confirmed, in which the film preferentially degraded directly from MAPbI₃ into PbI₂, here the iodine defects played a key role in promoting the dissociation of water molecules into OH⁻ and further catalyzing the decomposition of perovskite.     

Photocatalytic Activity and Characterization of the Sol-Gel Derived Pb-Doped TiO2 Thin Films

Photocatalytically active Pb-doped TiO₂ thin films were prepared on a soda-lime glass substrate by sol-gel dip-coating technique using TiO₂ sols containing lead(II) nitrate. The thin films were characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), UV-VIS spectroscopy and X-ray diffraction (XRD). A shift of the UV-VIS absorption towards longer wavelengths was observed, which indicated a decrease in the band-gap of TiO₂ upon Pb doping. XRD results showed both pure and Pb-doped TiO₂ thin films were polycrystalline, anatase type, and oriented predominantly to the (101) plane. A slight shift in the d-spacing for the Pb-doped film indicated the incorporation of Pb into the TiO₂ lattice to form Pb _x Ti_1–x O₂ solid solution. AFM results showed Pb-doped TiO₂ thin films were composed of larger TiO₂ particles and had rougher surface, compared with un-doped TiO₂ thin films. XPS results showed that except for the enrichment of Pb near the surface, Pb exists in the forms of Pb _x Ti_1–x O₂ and PbO. Dimethyl-2,2-dichlorovinyl phosphate (DDVP) was efficiently degraded in the presence of the Pb-doped TiO₂ thin films by exposing the insecticide solution to sunlight. The mechanism of photocatalytic activity enhancement of the Pb-doped TiO₂ thin films was discussed.