Density-functional study of structural and electronic properties of Si(n)C(n) (n=1-10) clusters

Density-functional theory with generalized gradient approximation for the exchange-correlation potential has been used to calculate the structural and electronic structure of Si(n)C(n) (n=1-10) clusters. The geometries are found to undergo a structural change from two dimensional to three dimensional when the cluster size n equals 4. Cagelike structures are favored as the cluster size increases. A distinct segregation between the silicon and carbon atoms is observed for these clusters. It is found that the C atoms favor to form five-membered rings as the cluster size n increases. However, the growth motif for Si atoms is not observed. The Si(n)C(n) clusters at n=2, 6, and 9 are found to possess relatively higher stability. On the basis of the lowest-energy geometries obtained, the size dependence of cluster properties such as binding energy, HOMO-LUMO gap, Mulliken charge, vibrational spectrum, and ionization potential has been computed and analyzed. The bonding characteristics of the clusters are discussed.     

Structural and optical properties of passivated silicon nanoclusters with different shapes: a theoretical investigation

Optimized geometries and electronic structures of hydrogenated silicon nanoclusters, which include the Td and Ih symmetries, have been generated by using the semiempirical AM1 and PM3 methods, the density functional theory (DFT) B3LYP method with the 6-31G(d) and LANL2DZ basis sets from the Gaussian 03 package, and the local density functional approximation (LDA), which is implemented in the SIESTA package. The calculated diameters for these Td symmetric hydrogenated silicon nanoclusters are in the range from 6.61 A (Si5H12) to 23.24 A (Si281H172). For the Ih symmetry, we calculated Si20H20 and Si100H60 nanoclusters only. Theoretically, the energy gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) is size dependent. The calculated energy gap decreases (Si5H12: 7.65 eV to Si281H172: 3.06 eV) while the diameter of silicon nanocluster increases. By comparing different calculated results, we concluded that the calculated energy gap by B3LYP/6-31G(d)//LDA/SIESTA is close to that from experiment and that the LDA/SIESTA result underestimates the experimental value. On the contrary, the AM1 and PM3 results overestimate the experimental results. For investigation of the optical properties of Si nanoclusters as a function of surface passivation, we carried out a B3LYP/6-31G(d)//LDA/SIESTA calculation of the Si35 and Si47 core clusters with full alkyl-, OH-, NH2-, CH2NH2-, OCH3-, SH-, C3H6SH-, and CN- passivations. The calculated optical properties of alkyl passivated Si35 nanoclusters (Si35(CH3)36, Si35(C2H5)36, and Si35(C3H7)36) are close to one another and are higher than those of oxide, nitride, and sulfide passivated Si 35 clusters. In conclusion, the alkyl passivant affects weakly the calculated optical gaps, and the electron-withdrawing passivants generate a red-shift in the energy gap of silicon nanoclusters. A size-dependent effect is also observed for these passivated Si nanoclusters.     

Structure and stability of oxygen adsorption on Si(n) (n = 5-10) clusters

The structures, binding energies, and electronic properties of one oxygen atom (O) and two oxygen atoms (2O) adsorption on silicon clusters Si(n) with n ranging from 5 to 10 are studied systematically by ab initio calculations. Twelve stable structures are obtained, two of which are in agreement with those reported in previous literature and the others are new structures that have not been proposed before. Further investigations on the fragmentations of Si(n)O and Si(n)O2 (n = 5-10) clusters indicate that the pathways Si(n)O --> Si(n-1) + SiO and Si(n)O2 --> Si(n-2) + Si2O2 are most favorable from thermodynamic viewpoint. Among the studied silicon oxide clusters, Si8O, Si9O, Si5O2 and Si8O2 correspond to large adsorption energies of silicon clusters with respect to O or 2O, while Si8O, with the smallest dissociation energy, has a tendency to separate into Si7 + SiO. Using the recently developed quasi-atomic minimal-basis-orbital method, we have also calculated the unsaturated valences of the neutral Si(n) clusters. Our calculation results show that the Si atoms which have the largest unsaturated valences are more attractive to O atom. Placing O atom right around the Si atoms with the largest unsaturated valences usually leads to stable structures of the silicon oxide clusters.     

Selective response of mesoporous silicon to adsorbants with nitro groups

We demonstrate that the electronic structure of mesoporous silicon is affected by adsorption of nitro-based explosive molecules in a compound-selective manner. This selective response is demonstrated by probing the adsorption of two nitro-based molecular explosives (trinitrotoluene and cyclotrimethylenetrinitramine) and a nonexplosive nitro-based aromatic molecule (nitrotoluene) on mesoporous silicon using soft X-ray spectroscopy. The Si atoms strongly interact with adsorbed molecules to form Si-O and Si-N bonds, as evident from the large shifts in emission energy present in the Si L(2,3) X-ray emission spectroscopy (XES) measurements. Furthermore, we find that the energy gap (band gap) of mesoporous silicon changes depending on the adsorbant, as estimated from the Si L(2,3) XES and 2p X-ray absorption spectroscopy (XAS) measurements. Our ab initio molecular dynamics calculations of model compounds suggest that these changes are due to spontaneous breaking of the nitro groups upon contacting surface Si atoms. This compound-selective change in electronic structure may provide a powerful tool for the detection and identification of trace quantities of airborne explosive molecules.     

Disparate effects of Cu and V on structures of exohedral transition metal-doped silicon clusters: a combined far-infrared spectroscopic and computational study

The growth mechanisms of small cationic silicon clusters containing up to 11 Si atoms, exohedrally doped by V and Cu atoms, are described. We find that as dopants, V and Cu follow two different paths: while V prefers substitution of a silicon atom in a highly coordinated position of the cationic bare silicon clusters, Cu favors adsorption to the neutral or cationic bare clusters in a lower coordination site. The different behavior of the two transition metals becomes evident in the structures of Si(n)M(+) (n = 4-11 for M = V, and n = 6-11 for M = Cu), which are investigated by density functional theory and, for several sizes, confirmed by comparison with their experimental vibrational spectra. The spectra are measured on the corresponding Si(n)M(+)·Ar complexes, which can be formed for the exohedrally doped silicon clusters. The comparison between experimental and calculated spectra indicates that the BP86 functional is suitable to predict far-infrared spectra of these clusters. In most cases, the calculated infrared spectrum of the lowest-lying isomer fits well with the experiment, even when various isomers and different electronic states are close in energy. However, in a few cases, namely Si(9)Cu(+), Si(11)Cu(+), and Si(10)V(+), the experimentally verified isomers are not the lowest in energy according to the density functional theory calculations, but their structures still follow the described growth mechanism. The different growth patterns of the two series of doped Si clusters reflect the role of the transition metal's 3d orbitals in the binding of the dopant atoms.     

Electronic and Optical Properties of Hydrogenated Si Clusters

The geometric, electronic, and photoabsorption properties of some hydrogenated silicon clusters are investigated. The density functional theory with generalized gradient approximation fimctional is applied. Our study shows that the geometric structures of them relax with their increasing sizes. Synchronously, the polarizations of Si-H bonds become weak slowly but overlap populations increase. In Mulliken population analysis, we find a distinctive passivation effect （some electrons are transferred from outer Si atoms to the central Si with four-coordinate Si atoms）. Owing to the quantum confinement, the energy gap and the lowest excitation energy increase with the decreasing sizes. For nanometer scale cluster, the transition from the highest occupied molecular orbital to the lowest unoccupied molecular orbital state is usually prohibited.     

Structure and electronic properties of PbnM (M=C, Al, In, Mg, Sr, Ba, and Pb; n=8, 10, 12, and 14) clusters: theoretical investigations based on first principles calculations

A systematic theoretical study of the PbnM (M=C, Al, In, Mg, Sr, Ba, and Pb; n=8, 10, 12, and 14) clusters have been investigated to explore the effect of impurity atoms on the structure and electronic properties of lead clusters. The calculations were carried out using the density functional theory with generalized gradient approximation for exchange-correlation potential. Extensive search based on large numbers of initial configurations has been carried out to locate the stable isomers of PbnM clusters. The results revealed that the location of the impurity atom depends on the nature of interaction between the impurity atom and the host cluster and the size of the impurity atom. Whereas, the impurity atoms smaller than Pb favor to occupy the endohedral position, the larger atoms form exohedral capping of the host cluster. The stability of these clusters has been analyzed based on the average binding energy, interaction energy of the impurity atoms, and the energy gap between the highest occupied and lowest unoccupied energy levels (HLG). Based on the energetics, it is found that p-p interaction dominates over the s-p interaction and smaller size atoms interact more strongly. The stability analysis of these clusters suggests that, while the substitution of Pb by C or Al enhances the stability of the Pbn clusters, Mg lowers the stability. Further investigations of the stability of PbnM clusters reveal that the interplay between the atomic and electronic structure is crucial to understand the stability of these clusters. The energy gap analysis reveals that, while the substitution of Mg atom widens the HLG, all other elements reduce the gap of the PbnM clusters.     

Role of doping and sheet size in tailoring optoelectronic properties of germanene: A TDDFT study

Germanene is a novel 2D material with promising optoelectronic properties, tuning of which is to be explored. This work demonstrates that doping and increasing the sheet size can alter optical and electronic properties of germanene via perturbation of the band structure. This feature has also been observed in other nanostructures, notably, silicon nanostructures, and may be attributed to quantum confinement effects. Our main findings on H‐terminated germanene are, (i) band gap can be reduced by 30%, (ii) exciton binding energy can be reduced by 60%, and (iii) absorption spectra can be tuned from UV to visible range. We employ time‐dependent density functional theory to investigate the role of dopants, boron (B), phosphorus (P), carbon (C), silicon (Si), and zirconium (Zr). Width of the germanene sheet is varied from 0.78 nm to 2.78 nm. Frequency and energy calculations are carried out to analyze the infrared (IR) and ultra‐violet (UV)‐visible (VIS) spectra.     

First principle study of magnetic and electronic properties of single X (X = Al,Si) atom added to small carbon clusters (C<Subscript> <Emphasis Type="Italic">n</Emphasis> </Subscript>X, <Emphasis Type="Italic">n</Emphasis> = 2–10)

In this paper, the magnetic and electronic properties of single aluminum and silicon atom added to small carbon clusters (C_nX; X = Al, Si; n = 2–10) are studied in the framework of generalized-gradient approximation using density functional theory. The calculations were performed for linear, two dimensional and three dimensional clusters based on full-potential local-orbital (FPLO) method. The total energies, HOMO–LUMO energy gap and total magnetic moments of the most stable structures are presented in this work. The calculations show that C_nSi clusters have more stability compared to C_nAl clusters. In addition, our magnetic calculations were shown that the C_nAl isomers are magnetic objects whereas C_nSi clusters are nonmagnetic objects.     

In situ x-ray photoelectron spectroscopic and density-functional studies of Si atoms adsorbed on a C60 film

The interaction between C(60) and Si atoms has been investigated for Si atoms adsorbed on a C(60) film using in situ x-ray photoelectron spectroscopy (XPS) and density-functional (DFT) calculations. Analysis of the Si 2p core peak identified three kinds of Si atoms adsorbed on the film: silicon suboxides (SiO(x)), bulk Si crystal, and silicon atoms bound to C(60). Based on the atomic percent ratio of silicon to carbon, we estimated that there was approximately one Si atom bound to each C(60) molecule. The Si 2p peak due to the Si-C(60) interaction demonstrated that a charge transfer from the Si atom to the C(60) molecule takes place at room temperature, which is much lower than the temperature of 670 K at which the charge transfer was observed for C(60) adsorbed on Si(001) and (111) clean surfaces [Sakamoto et al., Phys. Rev. B 60, 2579 (1999)]. The number of electrons transferred between the C(60) molecule and Si atom was estimated to be 0.59 based on XPS results, which is in good agreement with the DFT result of 0.63 for a C(60)Si with C(2v) symmetry used as a model cluster. Furthermore, the shift in binding energy of both the Si 2p and C 1s core peaks before and after Si-atom deposition was experimentally obtained to be +2.0 and -0.4 eV, respectively. The C(60)Si model cluster provides the shift of +2.13 eV for the Si 2p core peak and of -0.28 eV for the C 1s core peak, which are well corresponding to those experimental results. The covalency of the Si-C(60) interaction was also discussed in terms of Mulliken overlap population between them.     

M4 @Si28 (M=Al,Ga): metal-encapsulated tetrahedral silicon fullerene

It is known that silicon fullerenes cannot maintain perfect cage structures like carbon fullerenes. Previous density-functional theory calculations have shown that even with encapsulated species, nearly all endohedral silicon fullerenes exhibit highly puckered cage structures in comparison with their carbon counterparts. In this work, we present theoretical evidences that the tetrahedral fullerene cage Si(28) can be fully stabilized by encapsulating a tetrahedral metallic cluster (Al(4) or Ga(4)). To our knowledge, this is the first predicted endohedral silicon fullerene that can retain perfectly the same cage structure (without puckering) as the carbon fullerene counterpart (T(d)-C(28) fullerene). Density-functional theory calculations also suggest that the two endohedral metallosilicon fullerenes T(d)-M(4)@Si(28) (M=Al and Ga) can be chemically stable because both clusters have a large highest occupied molecular orbital-lowest unoccupied molecular orbital energy gap ( approximately 0.9 eV), strong spherical aromaticity (nucleus-independent chemical shift value of -36 and -44), and large binding and embedding energies.     

C76Si2异构体的分子设计和光谱研究

用INDO系列方法对C76Si2的17种可能异构体进行系统理论研究, 表明最稳定异构体是由C78(C2V)沿X方向椭球长轴所穿过的六元环上的2个C原子(29, 30)被Si取代所形成, 异构体稳定性随2个Si原子沿Z方向距离增加而降低, 且取代场所附近易成为进一步反应中心; C76Si2(29, 30)电子光谱吸收峰与C78相比发生红移, 主要是由于其对称性降低和LUMO- HOMO能隙变小。     

Structures and relative stability of medium- and large-sized silicon clusters. VI. Fullerene cage motifs for low-lying clusters Si(39), Si(40), Si(50), Si(60), Si(70), and Si(80)

We performed a constrained search, combined with density-functional theory optimization, of low-energy geometric structures of silicon clusters Si(39), Si(40), Si(50), Si(60), Si(70), and Si(80). We used fullerene cages as structural motifs to construct initial configurations of endohedral fullerene structures. For Si(39), we examined six endohedral fullerene structures using all six homolog C(34) fullerene isomers as cage motifs. We found that the Si(39) constructed based on the C(34)(C(s):2) cage motif results in a new leading candidate for the lowest-energy structure whose energy is appreciably lower than that of the previously reported leading candidate obtained based on unbiased searches (combined with tight-binding optimization). The C(34)(C(s):2) cage motif also leads to a new candidate for the lowest-energy structure of Si(40) whose energy is notably lower than that of the previously reported leading candidate with outer cage homolog to the C(34)(C(1):1). Low-lying structures of larger silicon clusters Si(50) and Si(60) are also obtained on the basis of preconstructed endohedral fullerene structures. For Si(50), Si(60), and Si(80), the obtained low-energy structures are all notably lower in energy than the lowest-energy silicon structures obtained based on an unbiased search with the empirical Stillinger-Weber potential of silicon. Additionally, we found that the binding energy per atom (or cohesive energy) increases typically >10 meV with addition of every ten Si atoms. This result may be used as an empirical criterion (or the minimal requirement) to identify low-lying silicon clusters with size larger than Si(50).     

Oxidation pattern of small silicon oxide clusters: structures and stability of Si6On (n = 1-12)

We have performed systematic ab initio calculations to study the structures and stability of Si(6)O(n)() clusters (n = 1-12) in order to understand the oxidation process in silicon systems. Our calculation results show that oxidation pattern of the small silicon cluster, with continuous addition of O atoms, extends from one side to the entire Si cluster. Si atoms are found to be separated from the pure Si cluster one-by-one by insertion of oxygen into the Si-O bonds. From fragmentation energy analyses, it is found that the Si-rich clusters usually dissociate into a smaller pure Si clusters (Si(5), Si(4), Si(3), or Si(2)), plus oxide fragments such as SiO, Si(2)O(2), Si(3)O(3), Si(3)O(4), and Si(4)O(5). We have also studied the structures of the ionic Si(6)O(n)(+/-) (n = 1-12) clusters and found that most of ionic clusters have different lowest-energy structures in comparison with the neutral clusters. Our calculation results suggest that transformation Si(6)O(n)+(a) + O --> Si(6)O(n+1)+(a) should be easier.     

Manipulating the electronic structures of silicon carbide nanotubes by selected hydrogenation

We show that the electronic and atomic structures of silicon carbide nanotubes (SiCNTs) undergo dramatic changes with hydrogenation from first-principles calculations based on density-functional theory. The exo-hydrogenation of a single C atom results in acceptor states close to the highest occupied valence band of pristine SiCNT, whereas donor states close to the lowest unoccupied conduction band appear as a Si atom being hydrogenated. Upon fully hydrogenating Si atoms, (8,0) and (6,6) SiCNTs become metallic with very high density of states at the Fermi level. The full hydrogenation of C atoms, on the other hand, increases the band gap to 2.6 eV for (8,0) SiCNT and decreases the band gap to 1.47 eV for (6,6) SiCNT, respectively. The band gap of SiCNTs can also be greatly increased through the hydrogenation of all the atoms.     

Investigation of Size-Selective Zr(2)@Si(n) (n = 16-24) Caged Clusters

The size-selective Zr(2)Si(n) (n = 16-24) caged clusters have been investigated by density functional approach in detail. Their geometries, relative stabilities, electronic properties and ionization potentials have been discussed. The dominant structures of bimetallic Zr(2) doped silicon caged clusters gradually transform to Zr(2) totally encapsulated structures with increase of the clustered size from 16 to 24, which is good agreement with the recent experimental result (J. Phys. Chem. A. 2007, 111, 42). Two novel isomers, i.e., naphthalene-like and dodecahedral Zr(2)Si(20) clusters, are found as low-lying conformers. Furthermore, the novel quasi-1D naphthalene-like Zr(n)Si(m) nanotubes are first reported. The second-order energy differences reveal that magic numbers of the different sized neutral Zr(2)Si(n) clusters appear at n = 18, 20 and 22, which are attributed to the fullerene-like, dodecahedral and polyhedral structures, respectively. The HOMO-LUMO gaps (>1 eV) of all the size-selective Zr(2)Si(n) clusters suggest that encapsulation of the bimetallic zirconium atoms is favorable for increasing the stabilities of silicon cages.     

Computational investigation of TiSin (n=2-15) clusters by the density-functional theory

The geometries, stabilities, and electronic properties of TiSin (n=2-15) clusters with different spin configurations have been systematically investigated by using density-functional theory approach at B3LYP/LanL2DZ level. According to the optimum TiSin clusters, the equilibrium site of Ti atom gradually moves from convex to surface, and to a concave site as the number of Si atom increases from 2 to 15. When n=12, the Ti atom in TiSi12 completely falls into the center of the Si outer frame, forming metal-encapsulated Si cages, which can be explained by using 16-electron rule. On the basis of the optimized geometries, various energetic properties are calculated for the most stable isomers of TiSin clusters, including the average binding energy, the highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO-LUMO) gap, fragmentation energy, and the second-order difference of energy. It is found that at size n=6,8,12 the clusters are more stable than neighboring ones. According to the Mulliken charge population analysis, charges always transfer from Si atoms to Ti atom. Furthermore, the HOMO-LUMO gaps of the most stable TiSin clusters are usually smaller than those of Sin clusters.     

Dispersion-corrected DFT study on the carbon monoxide sensing by B<Subscript>2</Subscript>C nanotubes: effects of dopant and interferences

Electrical sensitivity of a boron carbon nanotube (B₂CNT) was examined toward carbon monoxide (CO) molecule by using dispersion-corrected density functional theory calculations. It was found that CO is weakly adsorbed on the tube, releasing energy of 3.5–4.1 kcal/mol, and electronic properties of the tube are not significantly changed. To overcome this problem, boron and carbon atoms of the tube were substituted by aluminum and silicon atoms, respectively. Although both Al and Si doping make the tube more reactive and sensitive to CO, Si doping seems to be a better strategy to manufacture CO chemical sensors due to the higher sensitivity without deformation of nanotube structure after adsorption procedure. Moreover, it was shown that some interference molecules such as H₂O, H₂S and NH₃ cannot significantly change the electronic properties of B₂CNT. Therefore, the Si-doped tube might convert the presence of CO molecules to electrical signal.     

Highly luminescent silicon nanocrystals with discrete optical transitions.

A new synthetic method was developed to produce robust, highly crystalline, organic-monolayer passivated silicon (Si) nanocrystals in a supercritical fluid. By thermally degrading the Si precursor, diphenylsilane, in the presence of octanol at 500 degrees C and 345 bar, relatively size-monodisperse sterically stabilized Si nanocrystals ranging from 15 to 40 A in diameter could be obtained in significant quantities. Octanol binds to the Si nanocrystal surface through an alkoxide linkage and provides steric stabilization through the hydrocarbon chain. The absorbance and photoluminescence excitation (PLE) spectra of the nanocrystals exhibit a significant blue shift in optical properties from the bulk band gap energy of 1.2 eV due to quantum confinement effects. The stable Si clusters show efficient blue (15 A) or green (25-40 A) band-edge photoemission with luminescence quantum yields up to 23% at room temperature, and electronic structure characteristic of a predominantly indirect transition, despite the extremely small particle size. The smallest nanocrystals, 15 A in diameter, exhibit discrete optical transitions, characteristic of quantum confinement effects for crystalline nanocrystals with a narrow size distribution.     

Chemical surface passivation of 3C‐SiC nanocrystals: A first‐principle study

The effect of the chemical surface passivation, with hydrogen atoms, on the energy band gap of porous cubic silicon carbide (PSiC) was investigated. The pores are modeled by means of the supercell technique, in which columns of Si and/or C atoms are removed along the [001] direction. Within this supercell model, morphology effects can be analyzed in detail. The electronic band structure is performed using the density functional theory based on the generalized gradient approximation. Two types of pores are studied: C‐rich and Si‐rich pores surface. The enlargement of energy band gap is greater in the C‐rich than Si‐rich pores surface. This supercell model emphasizes the interconnection between 3C‐SiC nanocrystals, delocalizing the electronic states. However, the results show a clear quantum confinement signature, which is contrasted with that of nanowire systems. The calculation shows a significant response to changes in surface passivation with hydrogen. The chemical tuning of the band gap opens the possibility plenty applications in nanotechnology. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem 110:2455–2461, 2010