Energy Spectra of Excitons Bound to a Neutral Acceptor in Quantum Dots

The energy spectra of the ground state for an exciton (X) trapped by a neutral acceptor (A⁰) in a quantum dot with a parabolic confinement have been calculated as a function of the electron-to-hole mass ratio σ by using the hyperspherical coordinates. We find that the (A⁰,X) complex confined in a quantum dot has in general a larger binding energy than those in a two-dimensional quantum well and a three-dimensional bulk semiconductor, and the binding energy decreases with the increase of the electron-to-hole mass ratio.     

Binding Energy of an Exciton Bound to Ionized Acceptor in Quantum Dots

Binding energiesfor an exciton (X ) trapped in the two-dimensional quantum dot by a negative ion located on the z axis at a distance from the dot plane are calculated by using the method of few-body physics.This configuration is called a barrier (A-,X) center.The dependence of the binding energy of the ground state of the barrier (A-,X)center on the electron-to-hole mass ratio for a few values of the distance d between the fixed negative ion on the z axis and the dot plane is obtained.We find that when d → 0,the barrier (A-,X) center has not any bound state.We also studied the stability and binding energy of the ground state of the barrier (A-,X) center in a parabolic quantum dot as a function of the distance d between the fixed negative ion on the z axis and the dot plane.``     

Binding Energy of an Exciton Bound to Ionized Acceptor in Quantum Dots

Binding energiesfor an exciton (X) trapped in the two-dimensional quantum dot by a negative ion located on the z axis at a distance from the dot plane are calculated by using the method of few-body physics.This configuration is called a barrier (A^-,X) center.The dependence of the binding energy of the ground state of the barrier (A^-,X)center on the electron-to-hole mass ratio for a few values of the distance d between the fixed negative ion on the z axis and the dot plane is obtained.We find that when d → 0,the barrier (A^-,X) center has not any bound state.We also studied the stability and binding energy of the ground state of the barrier (A^-,X) center in a parabolic quantum dot as a function of the distance d between the fixed negative ion on the z axis and the dot plane.     

Energy Spectra of a Magnetic Quantum Ring with an Off-Center Impurity

In this paper, we calculate the low-lying spectra of a single-electron magnetic quantum ring with an offcenter Coulomb impurity, where the magnetic field is zero within the ring and constant elsewhere. The impurity, either an acceptor or a donor, is located at a distance d as measured from the plane of the ring along the vertical z direction.The magnetic moments are found in order to get visible discontinuities at the points of the ground-state orbital angular momentum L transitions induced by magnetic fields.     

电场调控下不对称耦合量子点中激子的发光特性

使用有效质量模型,从理论上对GaAs/A10.35Ga0.65As不对称耦合量子点在不同耦合强度下束缚态和反束缚态的能级分裂情况进行了详细分析,重点探讨了电子和空穴的耦合隧穿对量子点体系能级特征及激子发光强度的影响.研究发现:不对称耦合量子点在外电场作用下价带束缚态和反束缚态能级出现反交现象,反交处的能级分裂值和临界电...     

在磁场作用下含有杂质的半导体量子环中电子的能级

由于量子环特殊的结构,我们尝试过不少方法,发现一般传统方法很难求解薛定谔方程,故很难求出它的波函数和能级。国内外很多学者从事这方面的研究,但发表的文献非常少。有必要寻找一些新的方法从事这方面的研究工作,本文中采用了B样条函数近似拟合波函数的方法,计算了一个在谐振子束缚势和磁场作用下含有杂质的二维量子环中的电子能级。研究了电子能级随磁场强度、束缚势的变化关系以及电子能级与量子环半径的关系。我们发现电子能级随磁场强度、束缚势强度的增强而增强;每一个能级都有一个最小值在特定的量子环半径上,并且随着能级的增加,最小值的位置向半径大的方向偏移。     

有限深抛物势量子环类氢杂质能级

在有效质量近似下,用微扰法研究InAs量子环内类氢杂质基态及低激发态的能级.受限势采用有限深抛物型势,在二维平面极坐标下,用薛定谔方程的解析解计算.数值结果显示:在抛物势平台区,类氢杂质能级不随电子径向坐标改变,并具有二维氢原子能级的特征;在有限深抛物势区,电子能级敏感地依赖于量子环半径,能级存在极小值,这是由于限制势采用抛物势的结果.如果减小环的半径,可以增加能级间距;简并能级发生分裂并且间距随半径增大而增大,第一激发态的简并没有消除,第二激发态的简并被部分地消除.本文结果对研究量子环的光跃迁及光谱结构有指导意义.     

Four-Electron Quantum Ring in a Magnetic Field

We study a quantum ring （QR） with four electrons in a perpendicular external magnetic field B by exact diagonalization. The low-lying spectra of the QR as a function orb are obtained. A phase diagram is presented indicating that the angular momentum and the spin of the ground state of the QR may jump when B and/or the radius of the QR vary, and a corresponding analysis is performed. By plotting the density functions of the QR, the ground-state configuration is found to be a regular quadrangle. Furthermore, the features of the ground-state persistent current are revealed.     

量子点激子超辐射的条件和量子点集合的相干辐射

半导体量子点的激子超辐射出现的条件是本文激子超辐射的理论研究中的重点,我们的理论推导结果揭示要观测到半导体量子点的激子超辐射必须采用短于百飞秒的激发源。我们用ZnO单量子点观察到激子超辐射,同时测量和分析讨论了量子点集合的相干辐射性质,发现单量子点超辐射的二次方泵浦与辐射强度关系被大量量子点间的线性递增所掩盖。     

变分法计算ZnO量子点中激子的基态能

ZnO是一种新型宽禁带直接带隙Ⅱ-Ⅵ族半导体材料,室温激子束缚能高达60meV,远大于室温热离化能(26meV),因此ZnO是适于室温或更高温度下使用的高效紫外发射材料。ZnO半导体量子点材料与体材料相比具有崭新的光电特性,特别在紫外激光器件方面,与ZnO的激子特性密切相关,因此理论上对ZnO量子点中激子的基态能(束缚能)的研究就显得十分必要。采用有效质量近似(EMA)方法,提出新的比较简单的尝试波函数,并用变分法对ZnO量子点的激子基态能进行了计算。将计算结果与我们用固态热分解法制备的ZnO量子点的实验结果进行了比较,发现与实验结果非常吻合;与Y．Kayanuma的理论计算结果进行了比较,二者的计算结果也基本一致。说明选取的尝试波函数简单有效,可用于计算其他半导体量子点材料,具有一定的实用价值。     

Negatively Charged Excitons in a Quantum Disk

The method of few-body physics is applied to treating negatively charged excitons in a quantum disk. The energies of low-lying states of a negatively charged exciton are calculated for a few values of the electron-to-hole mass ratio. A new bound state of a negatively charged exciton in a quantum disk with orbital angular momentum L = 1 and the triplet state of the two bound electrons are predicted. The binding energy of a negatively charged exciton asfunction of disk radius for the heavy hole and the light hole is investigated.     

量子环上粒子体系的计算

对于量子环上带电粒子体系,组成本征函数的基矢数及哈密顿矩阵元素数都极大,数值计算量庞大.本文介绍在处理此问题时按轨道总角动量分类从基矢集中选择子基矢集的方法和技巧.应用计算机进行数值计算时,此方法比以往节省90%以上的时间.     

Binding Energy of an Off-Center D- in a Spherical Quantum Dot

Using the method of matrix diagonalization, we investigate an off-center D^- in a spherical quantum dot （QD） subjected to a parabolic potential confinement. We discuss the effect of the position of an impurity in the QD on the binding energy of the D system, Eurthermore, we compare a negatively charged donor D^- with a neutral donor DO confined by a spherical QD with a parabolic potentiM. The results have clearly demonstrate the so-called quantum size effect. The binding energy is dependent on the confining potential hw0 and the impurity ion distance D.     

Binding energies of an exciton in a Gaussian potential quantum dot

In this paper, an exciton trapped by a Gaussian confining potential quantum dot has been investigated. Calculations are made by using the method of numerical diagonalization of Hamiltonian in the effective-mass approximation. The dependences of binding energies of the ground state and the first excited state on the size of the confining potential and the strength of the magnetic field are analysed explicitly.     

The Electron-Hole Pair in a Single Quantum Dot and That in a Vertically Coupled Quantum Dot

The energy spectra of low-lying states of an exciton in a single and a vertically coupled quantum dots arestudied under the influence of a perpendicularly applied magnetic field. Calculations are made by using the method ofnumerical diagonalization of the Hamiltonian within the effective-mass approximation. We also calculated the bindingenergy of the ground and the excited states of an exciton in a single quantum dot and that in a vertically coupledquantum dot as a function of the dot radius for different values of the distance and the magnetic field strength.     

The Electron－Hole Pair in a Single Quantum Dot and That in a Vertically Coupled Quantum Dot

The energy spectra of low-lying states of an exciton in a single and a vertically coupled quantum dots are studied under the influence of a perpendicularly applied magnetic field. Calculations are made by using the method of numerical diagonalization of the Hamiltonian within the effective-mass approximation. We also calculated the binding energy of the ground and the excited states of an exciton in a single quantum dot and that in a vertically coupled quantum dot as a function of the dot radius for different vaJues of the distance and the magnetic field strength.     

InAs量子环中类氢杂质能级

在有效质量近似下,利用微扰法研究了InAs量子环内类氢杂质基态及低激发态的能级分布。受限势采用抛物形势,在二维平面极坐标下,用薛定谔方程的精确解析解进行计算。数值计算结果显示,电子能级敏感地依赖于量子环半径,能级存在极小值,这是由于限制势采用抛物势的结果。如果减小环的半径,可以增加能级间距。第一激发态类氢杂质能级的简并没有消除,n≥2时简并的能级发生分裂并且间距随半径的增大而增大。电子能级间距还敏感地依赖于角频率并随角频率的增大而增大。第一激发态的简并没有消除,第二激发态的简并被部分地消除。在计算InAs量子环中类氢杂质的基态和低激发态的能级时,角频率改变的影响也是很深刻的。文章结果对研究量子环的光跃迁及光谱结构有重要指导意义。     

无限深量子阱中强耦合极化子的基态结合能

研究了无限深量子阱中极化子的基态性质,采用线性组合算符和变分相结合的方法导出了强耦合极化子的振动频率λ、基态能量E₀和基态结合能E_b,讨论了阱宽L和电子-LO声子耦合强度α对强耦合极化子的振动频率λ、基态能量E₀和基态结合能E_b的影响。通过数值计算,结果表明:强耦合极化子的振动频率和基态结合能随阱宽L的增大而减小,随电子-LO声子耦合强度α的增强而增大;基态能量随阱宽L的增大而减小,其绝对值随电子-LO声子耦合强度α的增强而增大;当量子阱阱宽L趋近于无限大和无限小两种极限情况下,分别与三维和二维极化子的结果相一致。     

Dynamics of Optically Driven Exciton and Quantum Decoherence

By using the normal ordering method, we study the state evolution of an optically driven excitons in aquantum well immersed in a leaky cavity, which was introduced by Yu-Xi Liu et al. [Phys. Rev. A63 (2001) 033816]. Theinfluence of the externallaser field on the quantum decoherence of a mesoscopically superposed state of the excitons isinvestigated. Our result shows that, the classical field can compensate the energy dissipation of the excitons. Althoughthe decoherence rate of the excitonic Schrodinger cat state does not depend on the external field, the phase of thedecoherence factor can be well controlled by adjusting the amplitude of the external field as well as the detuning betweenthe field and the transition frequency of the atom.