Radiational corrections and two-photon transfer in elastic electron-electron and electron-positron scattering

The radiational corrections to the differential cross section of elastic electron—electron and electron—positron scattering in the center-of-mass system are determined in the fourth order of perturbation theory by quantum-electrodynamic methods. The contribution of two-photon exchange is determined in the static approximation for one of the colliding particles, taking subsequent account of the deflection of the second particle in the center-of-mass system. The presence of an annihilation channel in the two-photon exchange of electron—positron scattering leads to more intense soft-photon emission than in electron—electron scattering. Data from modern electron—positron colliders permit experimental verification of quantum electrodynamics at high energies.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 77–83, August, 1993.     

Coulomb drag experiments in low density 2D hole bilayers

We performed experiments studying the Coulomb drag in low density 2D hole bilayers, with r_s ranging from roughly 10 to 20. As the carrier density is lowered into the dilute regime, we observe a significant enhancement of the drag resistivity, such that the interlayer carrier–carrier scattering rate constitutes a major component of the single layer resistivity. In addition, anomalies to the expected temperature and in-plane magnetic field dependences are observed, and are found to correlate with similar anomalies in the single layer resistivity. These results suggests that the origin of the 2D metal–insulator transition phenomena affects both transport properties in a very similar fashion.     

Pseudospin solitons in the coherent stripe phase of a bilayer quantum Hall system

In the Hartree–Fock approximation and at total filling factor ν=4N+1, the ground state of the two-dimensional electron gas in a double quantum well system in a quantizing magnetic field is, in some range of interlayer distances, a coherent striped phase. This stripe phase has one-dimensional coherent channels that support charged excitations in the form of pseudospin solitons. In this work, we compute the transport gap of the coherent striped phase due to the creation of soliton–antisoliton pairs using a supercell microscopic unrestricted Hartree–Fock approach. We study the energy gap as a function of interlayer distance and tunneling amplitude. Our calculations confirm that the soliton–antisoliton excitation energy is lower than the corresponding Hartree–Fock electron–hole pair energy.     

Energy loss rate of two-dimensional electron gas in GaInAs/AlInAs, InSb/AlInSb and GaSb/AlGaAsSb heterostructures

Energy loss rates of two-dimensional electron gas in GaInAs/AlInAs, InSb/AlInSb and GaSb/AlGaAsSb heterostructures are theoretically investigated over a wide range of temperature based on the electron–one-phonon and electron–two-phonon interactions. Calculations are presented for electron acoustic one-phonon interaction via deformation potential and piezoelectric coupling and electron–LO phonon interaction with hot phonon effect. In addition, energy loss rate due to electron-two-zone edge transverse acoustic (TA) phonons is also presented. A very good agreement is obtained between the calculations and experimental data in GaInAs/AlInAs structure with the inclusion of electron–two-zone edge TA phonon interaction. In all these three structures energy loss is dominated by (i) acoustic one-phonon scattering at low temperatures, (ii) two-TA zone edge phonons at intermediate temperatures and (iii) LO phonons at high temperatures. It is observed that, hot phonon effect reduces the energy loss rate considerably in these structures.     

Influence of the quantum dot shape on the determination of the electronic structure and electron decoherence

Theoretical calculations of electron–phonon scattering rates in AlGaN/GaN quantum dots (QDs) have been performed by means of effective mass approximation in the frame of finite element method. The influence of a symmetry breaking of the carrier's wave function on the electron dephasing time is investigated for various QDs shapes. In a QD system the electron energy increases when the QD shape changes from a spherical to a non-spherical form. In addition, the influence of the QD shape upon the electronic structure can be modulated by external magnetic fields. We also show that the electron–acoustic phonon scattering rates strongly depend upon both the QD shape and the applied magnetic field. As an additional parameter, the QD shape can be used to modify the electron–acoustic phonon interaction in a wide range. Moreover, the scattering rate of different transitions, such as Δm=0(1), presents distinct magnetic field dependency.     

Ultrafast carrier dynamics of resonantly excited InAs/GaAs self-assembled quantum dots

We study theoretically the time development of electronic relaxation in quantum dots. We consider the process of relaxation of the state with an electron prepared at the beginning of relaxation in the electronic ground state. We obtain a fast (in picoseconds) increase of electronic population in the excited state. Also, we consider the process of relaxation of an electron from an excited state in the dot. Here we obtain an incomplete depopulation of the electron from the excited state. We compare these results to experiments in which a fast decrease of luminescence is reported during the first period of relaxation after resonant excitation of the ground state. We estimate numerically the role of electron–LO–phonon (Fröhlich's coupling) mechanism in these processes. We show that this effect may be attributed to the influence of multiple scattering of quantum dot electrons on LO phonons. A single-electron two-energy-level quantum dot model is used to demonstrate this effect in an isolated semiconductor quantum dot.     

The role of finite hole mass in the negatively charged exciton in two dimensions

The role of finite hole mass on the ground and excited states of the negatively charged exciton in two dimensions is discussed. We present results of configuration-interaction calculation using exact excitonic states and results of a variational calculation of the ground-state energy to elucidate the interplay of finite hole mass and electron–electron interactions.     

Low-energy electronic spin excitations between filling factors ν=1 and studied by optically detected nuclear magnetic resonance

We report measurements of the spin relaxation time (T_1n) for nuclei in the potential well confining a high-mobility two-dimensional electron system at a single GaAs–GaAlAs heterojunction. At low temperatures nuclear spin relaxation is dominated by electron–nuclear spin scattering: we find that T_1n displays sharp maxima at incompressible states throughout the hierarchy of the fractional quantum Hall effect. This behaviour is consistent with the existence of low-energy spin excitations only where the electron system is compressible. Our measurements also provide evidence for a gap in the spin excitation spectrum at .     

Photomagnetic effect in bilayer two-dimensional electron–hole systems

In tilted magnetic fields a bilayer electron–hole system is found to generate a photocurrent under terahertz radiation as the system is tuned to electron cyclotron resonance conditions. The photoinduced current amplitude oscillates with the magnetic field in correlation with Shubnikov–de Haas oscillations for electrons. The phenomenon is accounted for by a photomagnetic effect in electron–hole systems in the quantum Hall regime and has potentialities for terahertz detection and spectroscopy.     

Effect of boundaries and impurities on electron–phonon dephasing

Electron scattering from boundaries and impurities destroys the single-particle picture of the electron–phonon interaction. We show that quantum interference between ‘pure‘ electron–phonon and electron–boundary/impurity scattering may result in the reduction as well as to the significant enlargement of the electron dephasing rate. This effect crucially depends on the extent, to which electron scatterers, such as boundaries and impurities, are dragged by phonons. Static and vibrating scatterers are described by two dimensionless parametersq_Tl and q_TL, where q is the wavevector of the thermal phonon, l is the total electron mean-free path, L is the mean-free path due to scattering from static scatterers. According to the Pippard ineffectiveness condition , without static scatterers the dephasing rate at low temperatures is slower by the factor 1 / ql than the rate in a pure bulk material. However, in the presence of static potential the dephasing rate turns out to be 1 / qL times faster. Thus, at low temperatures electron dephasing and energy relaxation may be controlled by electron boundary/impurity scattering in a wide range.     

Charged magneto-exciton states in semiconductor quantum dots

By embedding a layer of self-assembled quantum dots into a field-effect structure, we are able to control the exciton charge in a single dot. We present the results of photoluminescence experiments as a function of both charge and magnetic field. The results demonstrate a hierarchy of energy scales determined by quantization, the direct Coulomb interaction, the electron–electron exchange interaction, and the electron–hole exchange interaction. For excitons up to the triply charged exciton, the behavior can be understood from a model assuming discrete levels within the quantum dot. For the triply charged exciton, this is no longer the case. In a magnetic field, we discover a coherent interaction with the continuum states, the Landau levels associated with the wetting layer.     

Origin of the blueshift in the infrared absorbance of intersubband transitions in N/GaN multiple quantum wells

A self-consistent calculation of the subband energy levels of n-doped quantum wells is studied. A comparison is made between theoretical results and experimental data. In order to account for the deviations between them, the ground-state electron–electron exchange interactions, the ground-state direct Coulomb interactions, the depolarization effect, and the exciton-like effect are considered in the simulations. The agreement between theory and experiment is greatly improved when all these aspects are taken into account. The ground-to-excited-state energy difference increases by 8 meV from its self-consistent value if one considers the depolarization effect and the exciton-like effect only. It appears that the electron–electron exchange interactions account for most of the observed residual blueshift for the infrared intersubband absorbance in Al_xGa_1-xN/GaN multiple quantum wells. It seems that electrons on the surface of the k-space Fermi gas make the main contribution to the electron–electron exchange interactions, while for electrons further inside the Fermi gas it is difficult to exchange their positions.     

Electron and phonon relaxation in metal films perturbed by a femtosecond laser pulse

A theoretical investigation of the electron and phonon time-dependent distributions in an Ag film subjected to a femtosecond laser pulse has been carried out. A system of two coupled time-dependent Boltzmann equations, describing electron and phonon dynamics, has been numerically solved. In the electron Boltzmann equation, electron–electron and electron–phonon collision integrals are considered together with a source term for laser perturbation. In the phonon Boltzmann equation, only electron–phonon collisions are considered, neglecting laser perturbation and phonon–phonon collisions. Screening of the interactions has been accounted for in both the electron–electron and the electron–phonon collisions. The results show the simultaneous electron and phonon time-dependent distributions from the initial non-equilibrium behaviour up to the establishment of a new final equilibrium condition. PACS 72.10.-d; 71.10.Ca; 63.20.Kr     

Rate of intersubband transitions of charge carriers in semiconductor quantum wells as a result of their Coulomb interaction

The intersubband scattering of charge carriers in semiconductor quantum wells as a result of their Coulomb interaction has been theoretically investigated. Analytical expressions for the rate of intersubband transitions in the process of electron—electron and electron—hole collisions have been derived in the Born approximation. The theoretical and experimental data on the photoluminescence decay time, obtained for the case of a nondegenerate distribution of charge carriers, were in qualitative agreement. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 782–787, November–December, 2005.     

Magnetoexcitons in unbalanced double layers

We study theoretically correlations of electrons and holes in unbalanced double-layer electronic systems in strong magnetic fields. Calculations are made using the exact diagonalization and the variational wave function. The ground state of an electron–hole pair in quantized cyclotron orbits possesses an in-plane electric dipole moment, when an electron and a hole are in different Landau orbits with different radii. The resulting attractive interactions between pairs creates the possibility of novel states.     

Mean-field dynamics of a quantum dot-microcavity system

Mean-field evolution equations for the exciton and photon populations and polarizations (Bloch–Lamb equations) are written and numerically solved in order to describe the dynamics of electronic states in a quantum dot coupled to the photon field of a microcavity. The equations account for phase space filling effects and Coulomb interactions among carriers, and include also (in a phenomenological way) incoherent pumping of the quantum dot, photon losses through the microcavity mirrors, and electron–hole population decay due to spontaneous emission of the dot. When the dot may support more than one electron–hole pair, asymptotic oscillatory states, with periods between 0.5 and 1.5 ps, are found almost for any values of the system parameters.     

Electric-field effects on photoluminescence properties in a GaAs/AlAs marginal type-I superlattice

We have investigated the electric-field effects on the cw and time-resolved photoluminescence (PL) properties in a marginal type-I GaAs/AlAs superlattice (SL) whose lowest X state (X₁) is situated in the lowest Γ(Γ₁) miniband. In the low bias voltage regime, the PL spectra reveal the transition between type-I and type-II radiative recombination processes caused by Wannier–Stark localization. In contrast, in the high bias voltage regime, the decay time of the time-resolved PL is prolonged. This is because of delayed carrier transport caused by Γ–X transfer. From these results, it was found that marginal type-I SLs present various interesting phenomena that originate from the competitive carrier transport among the Γ miniband, the localized Γ Stark–ladder states, and the X₁ state.     

Quantum Hall effect in back-gated InAs/GaSb heterostructures under a tilted magnetic field

We investigate the quantum Hall effect (QHE) in the InAs/GaSb hybridized electron–hole system grown on a conductive InAs substrate which act as a back-gate. In these samples, the electron density is constant and the hole density is controlled by the gate-voltage. Under a magnetic field perpendicular to the sample plane, the QHE appears along integer Landau-level (LL) filling factors of the net-carriers, where the net-carrier density is the difference between the electron and hole densities. In addition, longitudinal resistance maxima corresponding to the crossing of the extended states of the original electron and hole LLs make the QHE regions along integer-ν_net discontinuous. Under tilted magnetic fields, these R_xx maxima disappear in the high magnetic field region. The results show that the in-plane magnetic field component enhances the electron–hole hybridization and the formation of minigaps at LL crossings.     

Electronic structure and dynamics of optically excited single-wall carbon nanotubes

We have studied the electronic structure and charge-carrier dynamics of individual single-wall carbon nanotubes (SWNTs) and nanotube ropes using optical and electron–spectroscopic techniques. The electronic structure of semiconducting SWNTs in the band-gap region is analyzed using near-infrared absorption spectroscopy. A semi-empirical expression for E₁₁^S transition energies, based on tight-binding calculations is found to give striking agreement with experimental data. Time-resolved PL from dispersed SWNT-micelles shows a decay with a time constant of about 15 ps. Using time-resolved photoemission we also find that the electron–phonon (e–ph) coupling in metallic tubes is characterized by a very small e–ph mass-enhancement of 0.0004. Ultrafast electron–electron scattering of photo-excited carriers in nanotube ropes is finally found to lead to internal thermalization of the electronic system within about 200 fs. PACS 78.47.+p; 81.07.De; 78.67.Ch; 87.64.Ni     

Electron mobility variance in the presence of an electric field: Electron–phonon field-induced tunnel scattering

The problem of electron mobility variance is discussed. It is established that in equilibrium semiconductors the mobility variance is infinite. It is revealed that the cause of the mobility variance infinity is the threshold of phonon emission. The electron–phonon interaction theory in the presence of an electric field is developed. A new mechanism of electron scattering, called electron–phonon field-induced tunnel (FIT) scattering, is observed. The effect of the electron–phonon FIT scattering is explained in terms of penetration of the electron wave function into the semiconductor band gap in the presence of an electric field. New and more general expressions for the electron–non-polar optical phonon scattering probability and relaxation time are obtained. The results show that FIT transitions have principle meaning for the mobility fluctuation theory: mobility variance becomes finite.