High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD

The paper reports on the first experimental results of the mid-wave infrared (MWIR) HgCdTe barrier detectors operated at near-room temperatures and fabricated using metal organic chemical vapor deposition (MOCVD). SIMS profiles let to compare projected and obtained structures and reveals interdiffusion processes between the layers. Undesirable iodine diffusion from cap to the barrier increase the valance band offset and is the key item in limiting the performance of HgCdTe nBn detector. However, MOCVD technology with a wide range of composition and donor/acceptor doping and without post grown annealing might be successfully adopted for barrier device architectures.     

Two-dimensional modelling of HgCdTe photoconductive detectors

The performance of n-type HgCdTe mid-wavelength infrared (MWIR) photoconductors has been investigated using two-dimensional (2-D) device modelling. A comparison has been made between a practical detector structure with planar contacts on the upper HgCdTe surface, and a structure commonly used in one-dimensional (1-D) device modelling with end contacts to the photo-absorbing slab of semiconductor. This comparison highlights differences in detector responsivity, and spatial distribution of both the applied electric field and photogenerated minority carriers. The practical device structure, where 2-D effects are most evident, provided a good fit to experimental results for frontside-illuminated n-type HgCdTe photoconductive detectors with n⁺/n blocking contacts without needing to include S, the contact recombination velocity, which is commonly employed in 1-D models as a fitting parameter. Instead, only the n⁺ doping density (1 × 10¹⁶ cm^–3) and n⁺ doping region (depth of 3 μm), were used to account for the partial blocking of minority carriers by the contact region. In addition, the 2-D model was used to examine the influence of n⁺ blocking contact geometry and doping density on n-type HgCdTe photoconductor responsivity performance.     

Performance of mid-wave T2SL detectors with heterojunction barriers

A heterojunction T2SL barrier detector which effectively blocks majority carrier leakage over the pn-junction was designed and fabricated for the mid-wave infrared (MWIR) atmospheric transmission window. The layers in the barrier region comprised AlSb, GaSb and InAs, and the thicknesses were selected by using k · P-based energy band modeling to achieve maximum valence band offset, while maintaining close to zero conduction band discontinuity in a way similar to the work of Abdollahi Pour et al. [1] The barrier-structure has a 50% cutoff at 4.75 μm and 40% quantum efficiency and shows a dark current density of 6 × 10⁻⁶ A/cm² at −0.05 V bias and 120 K. This is one order of magnitude lower than for comparable T2SL-structures without the barrier. Further improvement of the (non-surface related) bulk dark current can be expected with optimized doping of the absorber and barrier, and by fine tuning of the barrier layer design. We discuss the effect of barrier doping on dark current based on simulations. A T2SL focal plane array with 320 × 256 pixels, 30 μm pitch and 90% fill factor was processed in house using a conventional homojunction p–i–n photodiode architecture and the ISC9705 readout circuit. High-quality imaging up to 110 K was demonstrated with the substrate fully removed.     

InAs/GaSb strained layer superlattice detectors with nBn design

We have investigated the electrical and optical properties of an nBn based Type-II InAs/GaSb strained layer superlattice detector as a function of absorber region background carrier concentration. Temperature-dependent dark current, responsivity and detectivity were measured. At T = 77 K and V_b = 0.1 V, with two orders of magnitude change in doping concentration, the dark current density increased from ～0.3 mA/cm² to ～0.3 A/cm². We attribute this to a depletion region that exists at the AlGaSb barrier and the SLS absorber interface. The device with non-intentionally doped absorption region demonstrated the lowest dark current density (0.3 mA/cm² at 0.1 V) with a specific detectivity D¹ at zero bias equal to 1.2 × 10¹¹ Jones at 77 K. The D¹ value decreased to 6 × 10¹⁰ cm Hz^1/2/W at 150 K. This temperature dependence is significantly different from conventional PIN diodes, in which the D¹ decreases by over two orders of magnitude from 77 K to 150 K, making nBn devices a promising alternative for higher operating temperatures.     

Complementary barrier infrared detector (CBIRD) with double tunnel junction contact and quantum dot barrier infrared detector (QD-BIRD)

The InAs/GaSb type-II superlattice based complementary barrier infrared detector (CBIRD) has already demonstrated very good performance in long-wavelength infrared (LWIR) detection. In this work, we describe results on a modified CBIRD device that incorporates a double tunnel junction contact designed for robust device and focal plane array processing. The new device also exhibited reduced turn-on voltage. We also report results on the quantum dot barrier infrared detector (QD-BIRD). By incorporating self-assembled InSb quantum dots into the InAsSb absorber of the standard nBn detector structure, the QD-BIRD extend the detector cutoff wavelength from ∼4.2 μm to 6 μm, allowing the coverage of the mid-wavelength infrared (MWIR) transmission window. The device has been observed to show infrared response at 225 K.     

High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(0 1 3)

The characteristics of SWIR (1.6–3 μm) 320 × 256 and 1024 × 1024 focal plane arrays (FPA’s) based on n-type In-doped HgCdTe heteroepitaxial layers are reported. The HgCdTe layers were grown by molecular beam epitaxy on silicon substrates with ZnTe and CdTe buffer layers. p–n junctions were formed by arsenic ion implantation into HgCdTe film. Reverse current in the temperature range from 210 to 330 K was found to be limited by the diffusion mechanism. At the same time in the temperature range from 140 to 210 K the reverse current was dominated by the thermal generation of charge carriers through deep traps located in the middle of the band gap. At 170 K NETD was less than 40 mK.     

Temperature dependent capacitance and DLTS studies of Ni/n-type 6H-SiC Schottky diode

Ni/n-type 6H-SiC Schottky barrier diode (SBD) has been characterized by the capacitance–voltage (C–V) technique as a function of temperature (120–500 K). The barrier height (BH) was determined as 1.36 eV at the temperature of 300 K and frequency of 50 kHz from C–V measurements, respectively. The BH for the Ni/n-type 6H-SiC does not exhibit temperature dependence between 260 and 500 K, while it changes slightly with decreasing temperature between 120 and 240 K. Deep level transient spectroscopy (DLTS) has been used to investigate deep levels in Ni/n-type 6H-SiC SBD. The four electron trap centers to be present at temperatures 120, 200, 350 and 415 K have been realized. The origin of these defects has been decided to be intrinsic nature and it has been found the correlation between C–V and DLTS measurements quite interesting.     

Femtosecond electron dynamics on solid surfaces probed by low energy ion scattering and stimulated desorption of secondary ions

The cations emission from condensed matter surfaces has been investigated on the basis of localization and delocalization of valence hole(s) in the femtosecond timescale. The yield of scattered H⁺ (E₀=100 eV), though negligibly small from the Pt(1 1 1) substrate, increases markedly when Ar is adsorbed on it, indicating the localization of a valence (H⁺ 1s) hole on the physisorbed Ar layer. However, the yield of H⁺ scattered from a thick H₂O layer is considerably small relative to that from Ar and CO layers. The delocalized nature of a valence hole in water ice is caused by some covalency in hydrogen bonds. Hydrated protons, H⁺(H₂O)_n, n=1,2,…,10, are emitted efficiently in electron stimulated desorption from water molecules adsorbed on the Ar layer; the ion yields are highest at the initial adsorption stage and decay steeply with increasing coverage. Coulombic repulsion between the hydrated protons confined in physisorbed nanoclusters is responsible for the explosive ion emission.     

Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice

In this paper, a mid-/long-wave dual-band detector which combined PπMN structure and unipolar barrier was developed based on type-II InAs/GaSb superlattice. A relevant 320 × 256 focal plane array (FPA) was fabricated. Unipolar barrier and PπMN structure in our dual band detector structure were used to suppress cross-talk and dark current, respectively. The two channels, with respective 50% cut-off wavelength at 4.5 μm and 10 μm were obtained. The peak quantum efficiency (QE) of mid wavelength infrared (MWIR) band and long wavelength infrared (LWIR) band are 53% at 3.2 μm under no bias voltage and 40% at 6.4 μm under bias voltage of −170 mV, respectively. And the dark current density under 0 and −170 mV of applied bias are 1.076 × 10⁻⁵ A/cm² and 2.16 × 10⁻⁴ A/cm². The specific detectivity of MWIR band and LWIR band are 2.15 × 10¹² cm·Hz^1/2/W at 3.2 μm and 2.31 × 10¹⁰ cm·Hz^1/2/W at 6.4 μm, respectively, at 77 K. The specific detectivity of LWIR band maintains above 10¹⁰ cm·Hz^1/2/W at the wavelength range from 4.3 μm to 10.2 μm under −170 mV. The cross-talk, selectivity parameter at 3.0 μm, about 0.14 was achieved under bias of −170 mV. Finally, the thermal images were taken by the fabricated FPA at 77 K.     

Distinction investigation of InGaAs photodetectors cutoff at 2.9 μm

Using double heterojunction structure with linearly graded In_xAl_1–xAs as buffer layer and In_0.9Al_0.1As as cap layer, wavelength extended In_0.9Ga_0.1As detectors with cutoff wavelength of 2.88 μm at room temperature have been grown by using gas source molecular beam epitaxy, their characteristics have been investigated in detail and compared with the detectors cutoff at 2.4 μm with similar structure as well as commercial InAs detectors. Typical resistance area product R₀A of the detectors reaches 3.2 Ω cm² at 290 K. Measured peak detectivity reaches 6.6E9 cm Hz^1/2/W at room temperature.     

1/f Noise QWIPs and nBn detectors

The low-frequency noise is a ubiquitous phenomenon and the spectral power density of this fluctuation process is inversely proportional to the frequency of the signal. We have measured the 1/f noise of a 640 × 512 pixel quantum well infrared photodetector (QWIP) focal plane array (FPA) with 6.2 μm peak wavelength. Our experimental observations show that this QWIP FPA’s 1/f noise corner frequency is about 0.1 mHz. With this kind of low frequency stability, QWIPs could unveil a new class of infrared applications that have never been imagined before. Furthermore, we present the results from a similar 1/f noise measurement of bulk InAsSb absorber (lattice matched to GaSb substrate) nBn detector array with 4.0 μm cutoff wavelength.     

Fast and wide-band response infrared detector using porous PZT pyroelectric thick film

Porous lead zirconate titanate (PbZr_0.3Ti_0.7O₃, PZT30/70) thick films and detectors for pyroelectric applications have been fabricated on alumina substrates by screen-printing technology. Low temperature sintering of PZT thick films have been achieved at 850 °C by using Li₂CO₃ and Bi₂O₃ sintering aids. The microstructure of PZT thick film has been investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The dielectric properties were measured using HP 4284 at 1 kHz under 25 °C. The permittivity and loss tangent of the thick films were 94 and 0.017, respectively. Curie temperature of PZT thick film was 425 °C as revealed by dielectric constant temperature measurement. The pyroelectric coefficient was determined to be 0.9 × 10⁻⁸ Ccm⁻² K⁻¹ by dynamic current measurement. Infrared detector sensitive element of dual capacitance was fabricated by laser directly write technology. Detectivity of the detectors were measured using mechanically chopped blackbody radiation. Detectivity ranging from 1.23 × 10⁸ to 1.75 × 10⁸ (cm Hz^1/2 W⁻¹) was derived at frequency range from 175.5 Hz to 1367 Hz, and D^*’s −3 dB cut-off frequency bandwidth was 1.2 kHz. The results indicate that the infrared detectors based on porous thick films have great potential applications in fast and wide-band frequency response conditions.     

QWIP focal plane arrays on InP substrates for single and dual band thermal imagers

Alternative material systems on InP substrate provide certain advantages for mid-wavelength infrared (MWIR), long-wavelength infrared (LWIR) and dual band MWIR/LWIR quantum well infrared photodetector (QWIP) focal plane arrays (FPAs). While InP/InGaAs and InP/InGaAsP LWIR QWIPs provide much higher responsivity when compared to the AlGaAs/GaAs QWIPs, AlInAs/InGaAs system facilitates completely lattice matched single band MWIR and dual band MWIR/LWIR FPAs.We present an extensive review of the studies on InP based single and dual band QWIPs. While reviewing the characteristics of InP/InGaAs and InP/InGaAsP LWIR QWIPs at large format FPA level, we experimentally demonstrate that the cut-off wavelength of AlInAs/InGaAs QWIPs can be tuned in a sufficiently large range in the MWIR atmospheric window by only changing the quantum well (QW) width at the lattice matched composition. The cut-off wavelength can be shifted up to ～5.0 μm with a QW width of 22 Å in which case very broad spectral response (Δλ/λ_p = ～30%) and a reasonably high peak detectivity are achievable leading to a noise equivalent temperature difference as low as 14 mK (f/2) with 25 μm pitch in a 640 × 512 FPA. We also present the characteristics of InP based two-stack QWIPs with wavelengths properly tuned in the MWIR and LWIR bands for dual color detection. The results clearly demonstrate that InP based material systems display high potential for dual band MWIR/LWIR QWIP FPAs needed by third generation thermal imagers.     

Photoionization studies of the atmospherically important species N and OH at the Elettra synchrotron radiation source

In this paper angularly resolved photoelectron spectra (PES) and constant-ionic-state (CIS) spectra are presented for the atmospherically important species N and OH.The natural width Γ, line shape parameters q and ρ² and discrete oscillator strengths f have been measured for the members of the N*[2s2p³(⁵S), np] (⁴P) ← N(⁴S) autoionizing resonances for n = 5–10. The n = 5 parameters calculated in this work are in good agreement with the values obtained previously whereas for the resonances with n = 6–10 the values of these parameters are reported for the first time. The asymmetry parameter (β) for the first band of N atoms, the N⁺(³P) ← N(⁴S) ionization, has also been measured in the photon energy range of the above autoionizing resonances.For OH, CIS spectra have been recorded for the first photoelectron band corresponding to the ionization OH⁺(X³Σ⁻, v⁺ = 0) ← OH(X²Π, v″ = 0). In these spectra, rotationally partially resolved bands associated with OH*(a¹Δ3d, v′ = 0) ← OH(X²Π, v″ = 0) resonances have been observed. Suggestions for their assignment are made on the basis of their positions and band simulations which use rotational line strength calculations.     

Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP)

We report the growth by Molecular Beam Epitaxy (MBE), fabrication and characterization of silicon doped 20 layer InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP) device structures. Two structures with InAs dots of vertical heights of 50 Å and 40 Å were compared. A 2–8 μm band normal incidence photo response of the detector with polarization and bias dependence was obtained at 77 K. The specific peak detectivity D1 be 0.8 × 10⁹ Jones for one of the detectors.     

Noise mechanisms investigation in pyroelectric infrared detectors based on Mn-doped Pb(Mg1/3Nb2/3)O3–0.27PbTiO3 vs. LiTaO3 single crystals

Different noise mechanisms between Mn-doped Pb(Mg_1/3Nb_2/3)O₃–0.27PbTiO₃ (Mn-PMNT) and LiTaO₃ (LT) based pyroelectric infrared detectors were observed under voltage mode, revealing that at low frequency of 10 Hz, dielectric loss noise dominates for Mn-PMNT based detectors, while resistance noise for LT based ones. Meanwhile, an extremely low equivalent voltage noise of appropriate 20 nV/Hz^1/2 was obtained in Mn-PMNT based detectors, 1/4 times lower than that of the LT based detectors. On the basis of the different noise mechanisms, frequency dependence of figure of merit for detectivity (F_d) have been deduced, providing significant reference values for the analysis of different materials based pyroelectric detectors.     

Analytical modeling and ATLAS simulation of N+-InP/n0-In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication

In this paper we report an analytical modeling of N⁺-InP/n⁰-In_0.53Ga_0.47As/p⁺-In_0.53Ga_0.47As p-i-n photodetector for optical fiber communication. The results obtained on the basis of our model have been compared and contrasted with the simulated results using ATLAS? and experimental results reported by others. The photodetector has been studied in respect of energy band diagram, electric field profile, doping profile, dark current, resistance area-product, quantum efficiency, spectral response, responsivity and detectivity by analytical method using closed form equations and also been simulated by using device simulation software ATLAS? from SILVACO® international. The photodetector exhibits a high quantum efficiency ～90%, responsivity ～1.152–1.2 A/W in the same order as reported experimentally by others, specific detectivity ～5 × 10⁹ cm Hz^1/2 W^?1at wavelength 1.55–1.65 μm, dark current of the order of 10^?11 A at reverse bias of 1.5 V and 10^?13–10^?12 A near zero bias. These values are comparable to those obtained for practical p-i-n detectors. The estimated noise equivalent power (NEP) is of the order of 2.5 × 10^?14 W.     

Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs,using an interfacial misfit array,and on native GaSb

InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At −0.1 V operating bias, 200 K dark current densities of 1.4 × 10⁻⁵ A cm⁻² (on GaAs) and 4.8 × 10⁻⁶ A cm⁻² (on GaSb) were measured. At the same temperature, specific detectivity (D^*) figures of 1.2 × 10¹⁰ Jones (on GaAs) and 7.2 × 10¹⁰ Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32–0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers.     

Birefraction of the LiNbO3 crystal in the infrared band

We proposed a spectrum method to determine birefraction of the sample. When the infrared incident light transmits in the birefraction direction of the cube crystal, because of the birefraction of the sample, the transmit spectrum appears interference fringes. The equation Δn = 1/[D(dυ/dm)] shows the relationship between the birefraction and the wave-number, with the interference-number of crystals in the infrared band at room temperature. Via the infrared transmitting along the x-axis of cube lithium niobate crystal, the interference fringes were found. By the fitted polynomial method, the relationship of the birefraction and the wave-number or wavelength of the lithium niobate crystal be educed, which is, Δn = 0.4149 ? 9.00174 × 10^?5υ + 5.64347 × 10^?9υ²,or n = 0.05366 ? 5.20334 × 10^?5λ + 3.99694 × 10^?8λ².     

Synthesis and visible light photocatalysis water splitting property of chromium-doped Bi4Ti3O12

Photocatalysts Bi₄Ti_3 ? xCr_xO₁₂(x = 0.00, 0.06, 0.15, 0.30, 0.40, and 0.50) with perovskite structure were synthesized by sol–gel method and their electronic structures and photocatalytic activities were investigated. The Bi₄Ti_2.6Cr_0.4O₁₂ photocatalyst exhibited the highest performance of H₂ evolution in methanol aqueous solution (58.1 μmol h^? 1 g^? 1) under visible light irradiation (λ > 400 nm) without a co-catalyst, whereas no H₂ evolution is observed for Bi₄Ti₃O₁₂ under the same conditions. The UV–vis spectra indicated that the Bi₄Ti_2.6Cr_0.4O₁₂ had strong photoabsorption in the visible light region. The results of density functional theory (DFT) calculation illuminate that the conduction bands of Bi₄Ti₃O₁₂ are mainly attributable to the Ti 3d + Bi 6p orbitals, and the valence bands are composed of O 2p + Bi 6s hybrid orbitals, while the conduction bands of chromium-doped Bi₄Ti₃O₁₂ are mainly attributable to the Ti 3d + Bi 2p + Cr 3d orbitals, and the O 2p + Cr 3d hybrid obitals are the main contribution to the valence band.