Design of a highly nonlinear twin bow-tie polymer photonic quasi-crystal fiber with high birefringence

A twin bow-tie polymer-based photonic quasi-crystal fiber with high birefringence, high nonlinearity and low dispersion as well as maintaining single mode operation is presented in the wavelength range 1.8–2.2 μm. Through optimizing fiber structure parameter using a full-vector finite-element method combined with perfectly matched layers boundary condition, the birefringence is as high as 2.43 × 10⁻³, the nonlinearity is as high as 118 W⁻¹ km⁻¹, and the dispersion is only 25 ps/nm/km at 2 μm with the holes pitch of 3.3 μm. From the point of fabrication, the influences of deviation of each air hole diameter are discussed to verify the robustness of the photonic quasi-crystal fiber designed.     

Design of hybrid photonic crystal fiber: Polarization and dispersion properties

A highly birefringent dispersion compensating hybrid photonic crystal fiber is presented. This fiber successfully compensates the chromatic dispersion of standard single mode fiber over E- to L-communication bands. Simulation results reveal that it is possible to obtain a large negative dispersion coefficient of about −1054.4 ps/(nm km) and a relative dispersion slope of 0.0036 nm⁻¹ at the 1550 nm wavelength. The proposed fiber simultaneously provides a high birefringence of order 3.45 × 10⁻² at the 1550 nm. Moreover, it is confirmed that the designed fiber successfully operates as a single mode in the entire band of interest. For practical conditions, the sensitivity of the fibers dispersion properties to a ±2% variation around the optimum values is carefully studied and the nonlinearity of the proposed fiber is also reported and discussed. Such fibers are essential for high speed transmission system as a dispersion compensator, sensing applications, fiber loop mirrors as well as maintaining single polarization, and many nonlinear applications such as four-wave mixing, etc.     

I–V characteristics of a methanol concentration sensor for direct methanol fuel cell (DMFC) by using catalyst electrode of Pt dots

In this work, the methanol sensors were fabricated by using Pt dot catalyst electrode and the level of electrochemical response was analyzed. This kind of sensors can be applicable to sensing the methanol concentration in real-time. When we measured the methanol sensor with 5 nm of Pt dot, we could get 2.00 × 10⁻⁶, 3.06 × 10⁻⁶ and 6.25 × 10⁻⁶ A of electric current value for the methanol concentration of 1, 2 and 3 mole, respectively. The measured voltage was 1 V. To optimize the sensitivity level of Pt dot catalyst electrode, the electrodes were made in H-grid shape. The distance between electrode branches was designed to be 80, 150 and 300 μm, respectively. When we measured the electric current–voltage characteristics of methanol sensor with 2 M of methanol, it was 3.06 × 10⁻⁶, 2.02 × 10⁻⁶ and 1.50 × 10⁻⁶ A, for 80, 150 and 200 μm, respectively. Thus it is suggested that more efficient response of methanol sensing is possible when the distance between electrodes is reduced.     

Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice

In this paper, a mid-/long-wave dual-band detector which combined PπMN structure and unipolar barrier was developed based on type-II InAs/GaSb superlattice. A relevant 320 × 256 focal plane array (FPA) was fabricated. Unipolar barrier and PπMN structure in our dual band detector structure were used to suppress cross-talk and dark current, respectively. The two channels, with respective 50% cut-off wavelength at 4.5 μm and 10 μm were obtained. The peak quantum efficiency (QE) of mid wavelength infrared (MWIR) band and long wavelength infrared (LWIR) band are 53% at 3.2 μm under no bias voltage and 40% at 6.4 μm under bias voltage of −170 mV, respectively. And the dark current density under 0 and −170 mV of applied bias are 1.076 × 10⁻⁵ A/cm² and 2.16 × 10⁻⁴ A/cm². The specific detectivity of MWIR band and LWIR band are 2.15 × 10¹² cm·Hz^1/2/W at 3.2 μm and 2.31 × 10¹⁰ cm·Hz^1/2/W at 6.4 μm, respectively, at 77 K. The specific detectivity of LWIR band maintains above 10¹⁰ cm·Hz^1/2/W at the wavelength range from 4.3 μm to 10.2 μm under −170 mV. The cross-talk, selectivity parameter at 3.0 μm, about 0.14 was achieved under bias of −170 mV. Finally, the thermal images were taken by the fabricated FPA at 77 K.     

A new design of low-loss and ultra-flat zero dispersion photonic crystal fiber using hollow ring defect

New hollow ring defect structure is introduced in photonic crystal fiber design for ultra- flat zero dispersion with very low waveguide losses. The hollow ring defect consisted of a central hole surrounded by a doped silica ring provides highly flexible defect engineering capabilities in photonic crystal fibers to achieve precise control of dispersion value and dispersion slope while independently maintaining low waveguide losses, which was not attainable in previous designs. A nearly flat zero dispersion of D=0±0.51 ps/nm km was obtained in the wavelength range of 1.44–1.61 μm with the maximum slope of ?2.7×10^?2 ps/nm² km. The confinement loss was less than 5.75×10^?8 dB/m along with the bending loss of 2.8×10^?6 dB/m for the radius of 10 mm, and splice loss of less than 1.57 dB to conventional single mode fiber at 1.55 μm.     

InGaAsP/InP photodetectors targeting on 1.06 μm wavelength detection

InP-based InGaAsP photodetectors targeting on 1.06 μm wavelength detection have been grown by gas source molecular beam epitaxy and demonstrated. For the detector with 200 μm mesa diameter, the dark current at 10 mV reverse bias and R₀A are 8.89 pA (2.2 × 10⁻⁸ A/cm²) and 3.9 × 10⁵ Ω cm² at room temperature. The responsivity and detectivity of the InGaAsP detector are 0.30 A/W and 1.45 × 10¹² cm Hz^1/2 W⁻¹ at 1.06 μm wavelength. Comparing to the reference In_0.53Ga_0.47As detector, the dark current of this InGaAsP detector is about 570 times lower and the detectivity is more than ten times higher, which agrees well with the theoretical estimation.     

Controlled fabrication of Si nanostructures by high vacuum electron beam annealing

Silicon nanostructures, called Si nanowhiskers, have been successfully synthesized on Si(1 0 0) substrate by high vacuum electron beam annealing (EBA). Detailed analysis of the Si nanowhisker morphology depending on annealing temperature, duration and the temperature gradients applied in the annealing cycle is presented. A correlation was found between the variation in annealing temperature and the nanowhisker height and density. Annealing at 935 °C for 0 s, the density of nanowhiskers is about 0.2 μm⁻² with average height of 2.4 nm grow on a surface area of 5×5 μm, whereas more than 500 nanowhiskers (density up to 28 μm⁻²) with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 °C for 0 s. At a cooling rate of −50 °C s⁻¹ during the annealing cycle, 10–12 nanowhiskers grew on a surface area of 5×5 μm, whereas close to 500 nanowhiskers grew on the same surface area for samples annealed at the cooling rate of −5 °C s⁻¹. An exponential dependence between the density of Si nanowhiskers and the cooling rate has been found. At 950 °C, the average height of Si nanowhiskers increased from 4.0 to 6.3 nm with an increase of annealing duration from 10 to 180 s. A linear dependence exists between the average height of Si nanowhiskers and annealing duration. Selected results are presented showing the possibility of controlling the density and the height of Si nanowhiskers for improved field emission properties by applying different annealing temperatures, durations and cooling rates.     

Device-level vacuum packaged uncooled microbolometer on a polyimide substrate

Uncooled infrared detectors (IR) on a polyimide substrate have been demonstrated where amorphous silicon (a-Si) was used as the thermometer material. New concepts in uncooled microbolometers were implemented during the design and fabrication, such as the integration of a germanium long-pass optical filter with the device-level vacuum package and a double layer absorber structure. Polyimide was used for this preliminary work towards vacuum-packaged flexible microbolometers. The detectors were fabricated utilizing a carrier wafer and low adhesion strength release layer to hold the flexible polyimide substrate during fabrication in order to increase the release yield. The IR detectors showed a maximum detectivity of 4.54 × 10⁶ cm Hz^1/2/W at a 4 Hz chopper frequency and a minimum noise equivalent power (NEP) of 7.72 × 10⁻¹⁰ W/Hz^1/2 at a biasing power of 5.71 pW measured over the infrared wavelength range of 8–14 μm for a 35 μm × 35 μm detector. These values are comparable to other flexible microbolometers with device-level vacuum packaging which are found in literature.     

Enhanced 2.0 μm emission in Ho3+/Yb3+ co-doped silica-germanate glass

A detailed investigation on thermal and spectroscopic properties of different Ho³⁺/Yb³⁺ concentration ratios in silica-germanate glasses is displayed. According to the measurement of thermal properties, the host glass possesses high transition temperature (585 °C) as well as the large ΔT(155 °C). The 2.0 μm fluorescence can be obtained from all the samples. Maximum stimulated emission cross-section of around 2.0 μm is 0.56 × 10⁻²⁰ cm² of Ho³⁺ as calculated by McCumber theory. Besides, the underlying mechanism is analyzed by means of fluorescence spectra. Thus, desirable thermal properties and spectroscopic characteristics of Ho³⁺/Yb³⁺ co-doped silica-germanate glass is a promising material in 2.0 μm emission.     

Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices

We report on heterostructure bandgap engineered midwave infrared photodetectors based on type-II InAs/GaSb strained layer superlattices with high operating temperatures. Bandgap and bandoffset tunability of antimonide based systems have been used to realize photodiodes and photoconductors. A unipolar barrier photodiode, pBiBn, and an interband cascade photovoltaic detector have been demonstrated with a 100% cutoff wavelength of 5 μm at 77 K. The pBiBn detector demonstrated operation up to room temperature and the cascade detector up to 420 K. A dark current density of 1.6 × 10⁻⁷ A/cm² and 3.6 × 10⁻⁷ A/cm⁻² was measured for the pBiBn and interband cascade detector, respectively, at 80 K. A responsivity of 1.3 A/W and 0.17 A/W was observed at −30 mV and −5 mV of applied bias for pBiBn and cascade detector, respectively, at 77 K. The experimental results have been explained by correlating them with the operation of the devices.     

Sonocatalyzed decolorization of synthetic textile wastewater using sonochemically synthesized MgO nanostructures

The present study focused on the synthesis of nanostructured MgO via sonochemical method and its application as sonocatalyst for the decolorization of Basic Red 46 (BR46) dye under ultrasonic irradiation. The sonocatalyst was characterized using X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) equipped with energy dispersive X-ray microanalysis (EDX). In the following, the sonocatalytic removal of the dye under different operational conditions was evaluated kinetically on the basis of pseudo first-order kinetic model. The reaction rate of sonocatalyzed decolorization using MgO nanostructures (12.7 × 10⁻³ min⁻¹) was more efficient than that of ultrasound alone (2.0 × 10⁻³ min⁻¹). The increased sonocatalyst dosage showed better sonocatalytic activity but the application of excessive dosage should be avoided. The presence of periodate ions substantially increased the decolorization rate from 14.76 × 10⁻³ to 33.4 × 10⁻³ min⁻¹. Although the application of aeration favored the decolorization rate (17.8 × 10⁻³ min⁻¹), the addition of hydrogen peroxide resulted in a considerable decrease in the decolorization rate (9.5 × 10⁻³ min⁻¹) due to its scavenging effects at specific concentrations. Unlike alcoholic compounds, the addition of phenol had an insignificant scavenging effect on the sonocatalysis. A mineralization rate of 7.4 × 10⁻³ min⁻¹ was obtained within 120 min. The intermediate byproducts were also detected using GC–MS analysis.     

Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP

We report electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs Bragg mirror lattice matched to InP grown by molecular beam epitaxy. A 98.2% reflectivity with a 107 nm stop band width centred at 1.54 μ m is obtained. An average voltage drop of 16 mV per period at a current density of 1 KA cm ^− 2is observed for a mean electron concentration of about 5.5  ×  10¹⁸cm ^− 3. The influence of structural and intrinsic properties of the heterostructure on the electrical resistivity and optical reflectivity is analysed.     

Compact sensor for methane detection in the mid infrared region based on Quartz Enhanced Photoacoustic Spectroscopy

A compact system for methane sensing based on the Quartz-Enhanced Photoacoustic Spectroscopy technique has been developed. This development has been taken through two versions which were based respectively on a Fabry Perot quantum wells diode laser emitting at 2.3 μm, and on a quantum wells distributed feedback diode laser emitting at 3.26 μm. These lasers emit near room temperature in the continuous wave regime. A spectrophone consisting of a quartz tuning fork and one steel microresonator was used. Second derivative wavelength modulation detection was used to perform low methane concentration measurements. The sensitivity and the linearity of the QEPAS sensor were studied. A normalized noise equivalent absorption coefficient of 7.26 × 10⁻⁶ cm⁻¹ W/Hz^1/2 was achieved. This corresponds to a detection limit of 15 ppmv for 12 s acquisition time.     

Resonant detectors and focal plane arrays for infrared detection

We are developing resonator-QWIPs for narrowband and broadband long wavelength infrared detection. Detector pixels with 25 μm and 30 μm pitches were hybridized to fanout circuits and readout integrated electronics for radiometric measurements. With a low to moderate doping of 0.2–0.5 × 10¹⁸ cm⁻³ and a thin active layer thickness of 0.6–1.3 μm, we achieved a quantum efficiency between 25 and 37% and a conversion efficiency between of 15 and 20%. The temperature at which photocurrent equals dark current is about 65 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 20 mK at 2 ms integration time and 60 K operating temperature. This good performance confirms the advantages of the resonator-QWIP approach.     

A miniaturized prototype of resonant banana-shaped photoacoustic cell for gas sensing

A resonant photoacoustic cell intended for laser-spectroscopy gas sensing is represented. This cell is a miniature imitation of a macro-scale banana-shaped cell developed previously. The parameters, which specify the cavity shape, are chosen so as not only to provide optimal cell operation at a selected acoustic resonance but also to reduce substantially the cell sizes. A miniaturized prototype cell (the volume of acoustic cavity of ∼5 mm³) adapted to the narrow diffraction-limited beam of near-infrared laser is produced and examined experimentally. The noise-associated measurement error and laser-initiated signals are studied as functions of modulation frequency. The background signal and the useful response to light absorption by the gas are analyzed in measurements of absorption for ammonia in nitrogen flow with the help of a pigtailed DFB laser diode oscillated near a wavelength of 1.53 μm. The performance of prototype operation at the second longitudinal acoustic resonance (the resonance frequency of ∼32.9 kHz, Q-factor of ∼16.3) is estimated. The noise-limited minimal detectable absorption normalized to laser-beam power and detection bandwidth is ∼8.07 × 10⁻⁸ cm⁻¹ W Hz^−1/2. The amplitude of the background signal is equivalent to an absorption coefficient of ∼2.51 × 10⁻⁵ cm⁻¹. Advantages and drawbacks of the cell prototype are discussed. Despite low absorption-sensing performance, the produced miniaturized cell prototype shows a good capability of gas-leak detection.     

320 × 256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice

Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice are demonstrated on GaSb substrate. The material is grown with 50% cut-off wavelength of 2.9 μm and 5.1 μm for the blue channel and red channel, separately at 77 K. 320 × 256 focal plane arrays fabricated in this wafer is characterized. The peak quantum efficiency without antireflective coating is 37% at 1.7 μm under no bias voltage and 28% at 3.2 μm under bias voltage of 130 mV. The peak specific detectivity are 1.51 × 10¹² cm·Hz^1/2/W at 2.5 μm and 6.11x10¹¹ cm·Hz^1/2/W at 3.2 μm. At 77 K, the noise equivalent difference temperature presents average values of 107 mK and 487 mK for the blue channel and red channel separately.     

Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays

In this paper, we present an InAs/GaSb type-II superlattice (SL) with the M-structure for the fabrication of a long-wavelength (10 μm range) infrared (LWIR) focal plane arrays (FPA), which are grown by molecular beam epitaxy (MBE). The M-structure is named for the shape of the band alignment while the AlSb layer is inserted into the GaSb layer of InAs/GaSb SL. A 320 × 256 LWIR FPA has been fabricated with low surface leakage and high R₀A product of FPA pixels by using anodic sulfide and SiO₂ physical passivation. Experiment results show that the devices passivated with anodic sulfide obviously have higher R₀A than the un-sulphurized one. The 50% cutoff wavelength of the LWIR FPA is 9.1 μm, and the R₀A is 224 Ω cm² with the average detectivity of 2.3 × 10¹⁰ cm Hz^1/2 W⁻¹.     

Oxygen diffusion and surface exchange studies on (La0.75Sr0.25)0.95Cr0.5Mn0.5O3−δ

Oxygen tracer diffusion coefficient (D^⁎) and surface exchange coefficient (k^⁎) have been measured for (La_0.75Sr_0.25)_0.95Cr_0.5Mn_0.5O_3−δ using isotopic exchange and depth profiling by secondary ion mass spectrometry technique as a function of temperature (700–1000 °C) in dry oxygen and in a water vapour-forming gas mixture. The typical values of D^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 4 × 10^− 10 cm² s^− 1 and 3 × 10^− 8 cm² s^− 1 respectively, whereas the values of k^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 5 × 10^− 8 cm s^− 1 and 4 × 10^− 8 cm s^− 1 respectively. The apparent activation energies for D^⁎ in oxidising and reducing conditions are 0.8 eV and 1.9 eV respectively.     

Synthesis of ammonia at atmospheric pressure with Ce0.8M0.2O2−δ (M = La,Y, Gd,Sm) and their proton conduction at intermediate temperature

Ionic conduction in fluorite-type structure oxide ceramics Ce_0.8M_0.2O_2−δ (M = La, Y, Gd, Sm) at temperature 400–800 °C was systematically studied under wet hydrogen/dry nitrogen atmosphere. On the sintered complex oxides as solid electrolyte, ammonia was synthesized from nitrogen and hydrogen at atmospheric pressure in the solid states proton conducting cell reactor by electrochemical methods, which directly evidenced the protonic conduction in those oxides at intermediate temperature. The rate of evolution of ammonia in Ce_0.8M_0.2O_2−δ (M = La, Y, Gd, Sm) is up to 7.2 × 10^− 9, 7.5 × 10^− 9, 7.7 × 10^− 9, 8.2 × 10^− 9 mol s^− 1 cm^− 2, respectively.     

Infrared fluorescence,energy transfer process and quantitative analysis of thulium-doped niobium silicate-germanate glass

Infrared fluorescence, energy transfer process, thermal stability and quantitative analysis of Tm³⁺ doped novel niobium silicate-germanate glasses have been investigated. The thermal stability changes indicate that the introduction of La₂O₃ to substitute for Nb₂O₅ can improve the anti-crystallization of present glass system. Intense 1.8 μm fluorescence has been achieved and the value of emission cross section can reach as high as 12.2 × 10⁻²¹ cm². Besides, the microparameters of energy transfer were analyzed by the extended overlap integral method. Hence, the results indicate that the excellent spectroscopic characteristics of this kind of silicate-germanate glass together with the good thermal properties may become a promising matrix applied for 1.8 μm band near-infrared laser.