Sensitized anti-Stokes luminescence centers in microcrystals of Zn<Subscript>0.6</Subscript>Cd<Subscript>0.4</Subscript>S solid solutions with adsorbed dye molecules and few-atomic silver clusters

The sensitized anti-Stokes luminescence excited by radiation with wavelengths from 610 to 750 nm and flux densities of 10¹⁴–10¹⁵ quanta/(cm²·s) is detected for microcrystals of Zn _0.6 Cd _0.4 S solid solutions with adsorbed organic malachite green and methylene blue dye molecules. The position of its excitation spectra coincides with that of the absorption spectra of adsorbed dye molecules, which suggests the cooperative mechanism of its occurrence. The possibility of amplification of the anti-Stokes luminescence by means of adsorption of silver atoms and few-atomic silver clusters, in addition to the dye molecules, on the Zn _0.6 Cd _0.4 S surface is investigated. It is assumed that in the latter case, the anti-Stokes luminescence is excited as a result of two-quantum optical transitions with electron or electron excitation energy transfer from the dye molecules adsorbed on the Zn _0.6 Cd _0.4 S surface to silver atoms and few-atomic silver clusters creating deep local states with photoionization energies of 1.8–2.0 eV in the gap. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 21–26, March, 2008.     

The mechanism of sensitized anti-stokes luminescence in crystals with adsorbed dyes

We have analyzed regular features of sensitization processes of crystals AgCl, AgCl_0.95I_0.05, and Zn_0.6Cd_0.4S to processes of a low-threshold (10^?3–10^?4 W/cm²) two-quantum excitation of anti-Stokes luminescence by adsorbed molecules and by J and H aggregates of dyes of different classes. The excitation centers of this luminescence are complex and consist of dye molecules and few-atom silver clusters adsorbed nearby. Luminescence-excitation processes involve stages of photoexcitation of adsorbed dye molecules; resonance transfer of electronic excitation energy to adsorbed atoms and few-atom silver clusters, levels of which lie near the middle of the band gap; and their subsequent photoionization.     

Anti-stokes luminescence of solid AgCl<Subscript>0.95</Subscript>I<Subscript>0.05</Subscript> solutions

An anti-Stokes luminescence band with λ_max = 515 nm of microcrystals of solid AgCl_0.95I_0.05 solutions excited by a radiation flux of density 10¹³–10¹⁵ quanta/cm²·sec in the range 600–800 nm at 77 K was detected. It is shown that the intensity of this luminescence and the frequency of its excitation depend on the prior UV-irradiation of samples. Analysis of the stimulated-photoluminescence spectra and the anti-Stokes luminescence excitation spectra of the indicated microcrystals has shown that to the centers of anti-Stokes luminescence excitation correspond local levels in the forbidden band of the crystals. These states are apparently due to the atomic and molecular disperse silver particles that can be inherent in character or formed as a result of a low-temperature photochemical process. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 738–742, November–December, 2005.     

Photostimulated formation of sensitized anti-Stokes luminescence centers in AgCl(I) microcrystals

The low-temperature photostimulated activation of sensitized anti-Stokes luminescence in heterogeneous systems based on AgCl(I) microcrystals with adsorbed organic dye molecules and their aggregates is investigated. It is shown that the observed considerable (by more than an order of magnitude) enhancement of the intensity of this luminescence is caused by the formation of silver atoms and few-atom clusters on the surface of AgCl(I) microcrystals, which increase the efficiency of a two-quantum excitation of sensitized anti-Stokes luminescence by optical radiation in the range 630–730 nm with the flux density 10¹³–10¹⁵ quantum cm^?2s^?1. Analysis of all the experimental results indicates that the excitation mechanism of anti-Stokes luminescence is based on successive electron transfer or electron-excitation energy transfer from a dye molecule to an atomic-molecular dispersive silver center.     

Exciton and intracenter luminescence in Cd<Subscript>0.6</Subscript>Mn<Subscript>0.4</Subscript>Te/Cd<Subscript>0.5</Subscript>Mg<Subscript>0.5</Subscript>Te quantum-well structures

Exciton luminescence and intracenter luminescence (IL) of Mn²⁺ ions in Cd_0.6Mn_0.4Te/Cd_0.5Mg_0.5Te structures with quantum wells (QWs) 7, 13, and 26 monolayers thick were studied. It was established that in QWs the intensity of exciton luminescence with respect to that of IL is a few orders of magnitude higher than that in bulk crystals. The spectral position of manganese IL profile changes noticeably in going from a bulk crystal to a QW of the same composition. The nonexponential parts of the IL decay curves are determined by excitation migration and the cooperative upconversion process, whose contribution is high under strong excitation and efficient migration. At 77 K, the IL decay constant τ within the exponential region increases with decreasing QW thickness. The decay constant τ in a QW, unlike in a bulk Cd_0.5Mn_0.5Te crystal, decreases substantially under cooling from 77 to 4 K.     

Optical properties of Cd<Subscript>0.6</Subscript>Mn<Subscript>0.4</Subscript>Te/Cd<Subscript>0.5</Subscript>Mg<Subscript>0.5</Subscript>Te quantum-well structures

Emission spectra of three Cd_0.6Mn_0.4Te/Cd_0.5Mg_0.5Te superlattices with Cd_0.6Mn_0.4Te quantum-well (QW) widths of 7, 13, and 26 monolayers, respectively, and the same thickness (46 monolayers) of the Cd_0.5Mg_0.5Te barriers have been studied. The QW width affects the shape and spectral position of the Mn²⁺ intracenter luminescence (IL) band as a result of the crystal field being dependent on the position of the manganese ion with respect to the interface. Measured in identical experimental conditions, the exciton luminescence as compared to the IL is substantially higher in intensity in a QW than in a bulk CdMnTe crystal. Some samples of superlattices and bulk crystals exhibit, in addition to the conventional IL band near 2.0 eV, a weaker band at about 1.45 eV. This band apparently derives from intracenter transitions in the Mn²⁺ ions in the regions where the crystal lattice has the rock-salt rather than the conventional zinc blende structure.     

Polarization of Luminescence in the Nanostructure Si/CaF<Subscript>2</Subscript> Upon Polarization of the Nuclear Spins of Fluorine

The laws governing polarization of luminescence in the nanostructure Si/CaF₂ upon polarization of the spins of the fluorine nuclei by means of optical excitation of charge carriers are considered theoretically. The possibility of studying experimentally the properties of nuclear spins in analyzing luminescence is shown. The polarization of luminescence is most informative in the range of excitation rates of charge carriers from 3⋅10⁷ to 3⋅ 10⁸ sec⁻¹ with the CaF₂ layer of thickness from 0.6 to 0.8 nm and optical excitation polarization degree of 0.1. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 4, pp. 524–529, July–August, 2005.     

Spectral and kinetic characteristics of CdI<Subscript>2</Subscript> and CdI<Subscript>2</Subscript>:Pb scintillators

We have studied the effect of lead dopant on the optical absorption, photoluminescence, and x-ray luminescence spectra, and the scintillation characteristics of CdI₂ at room temperature. The crystals for the study were grown by the Stockbarger-Bridgman method. Activation of CdI₂ from the melt by the compound PbI₂ leads to the appearance in the absorption spectra in the near-edge region of an activator band at 395–405 nm, which is interpreted as an A band connected with electronic transitions from the ¹S₀ state to the ³P₁ levels in the Pb²⁺ ion. For x-ray excitation, CdI₂:Pb²⁺ crystals with optimal dopant concentration (∼1.0 mol%) are characterized by a light yield with maximum in the 570–580 nm region that is an order of magnitude higher than for CdI₂ crystals in the 490–500 nm band. For α excitation, the radioluminescence kinetics for cadmium iodide is characterized by a very short (∼0.3 nsec) rise time and fast decay of luminescence, with τ₁ ≈ 4 nsec and τ₂ = 10–76 nsec. Depending on the conditions under which the crystals were obtained, the fast component fraction is 95%–99%. The crystal is characterized by a similar scintillation pulse in the case of excitation by x-ray pulses. The radioluminescence pulse shape for CdI₂:Pb in the decay stage is predominantly exponential, with luminescence decay time constants τ₁ ≈ 10 nsec and τ₂ = 200–250 nsec. This system is characterized by low afterglow, at the level for the Bi₄G₃O₁₂ scintillator. We have demonstrated the feasibility of using CdI₂:Pb as a scintillator for detecting α particles. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 6, pp. 825–830, November–December, 2008.     

VUV spectroscopy of Ce<Superscript>3+</Superscript>-doped Na<Subscript>0.4</Subscript>Lu<Subscript>0.6</Subscript>F<Subscript>2.2</Subscript> single crystals

The short-wave transmission spectrum of Na_0.4Lu_0.6F_2.2 with the visible/ultraviolet transmission edge of 8 eV was studied. Absorption spectra of the 4f—5d transitions of the Ce³⁺ ion in the region of 4–8 eV were studied in Ce³⁺-doped Na_0.4Lu_0.6F_2.2 single crystals. Luminescence spectra in the ultraviolet and visible spectral regions, luminescence decay kinetics and reflection and luminescence excitation spectra in the visible/ultraviolet and ultraviolet regions (4–20 eV) were investigated at helium and room temperatures.     

Luminescence and thermally stimulated recombination processes in Li<Subscript>6</Subscript>Gd(BO<Subscript>3</Subscript>)<Subscript>3</Subscript>:Ce<Superscript>3+</Superscript> crystals

The luminescence and thermally stimulated recombination processes in lithium borate crystals Li₆Gd(BO₃)₃ and Li₆Gd(BO₃)₃:Ce have been studied. The steady-state luminescence spectra under X-ray excitation (X-ray luminescence), temperature dependences of the intensity of steady-state X-ray luminescence (XL), and thermally stimulated luminescence (TSL) spectra of these compounds have been investigated in the temperature range of 90–500 K. The intrinsic-luminescence 312-nm band, which is due to the ⁶ P _J → ⁸ S _7/2 transitions in Gd³⁺ matrix ions, dominates in the X-ray luminescence spectra of these crystals; in addition, there is a wide complex band at 400–420 nm, which is due to the d → f transitions in Ce³⁺ impurity ions. It is found that the steady-state XL intensity in these bands increases several times upon heating from 100 to 400 K. The possible mechanisms of the observed temperature dependence of the steady-state XL intensity and their correlation with the features of electronic-excitation energy transfer in these crystals are discussed. The main complex TSL peak at 110–160 K and a number of minor peaks, whose composition and structure depend on the crystal type, have been found in all crystals studied. The nature of the shallow traps that are responsible for TSL at temperatures below room temperature and their relation with defects in the lithium cation sublattice are discussed.     

Thermally stimulated recombination processes and luminescence in Li<Subscript>6</Subscript>(Y,Gd,Eu)(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> crystals

The thermally stimulated recombination processes and luminescence in crystals of the lithium borate family Li₆(Y,Gd,Eu)(BO₃)₃ have been investigated. The steady-state luminescence spectra under X-ray excitation (X-ray luminescence spectra), the temperature dependences of the X-ray luminescence intensity, and the glow curves for the Li₆Gd(BO₃)₃, Li₆Eu(BO₃)₃, Li₆Y_0.5Gd_0.5(BO₃)₃: Eu, and Li₆Gd(BO₃)₃: Eu compounds have been measured in the temperature range 90–500 K. In the X-ray luminescence spectra, the band at 312 nm corresponding to the ⁶ P _J → ⁸ S _7/2 transitions in the Gd³⁺ ion and the group of lines at 580–700 nm due to the ⁵ D ₀ → ⁷ F _J transitions (J = 0–4) in the Eu³⁺ ion are dominant. For undoped crystals, the X-ray luminescence intensity of these bands increases by a factor of 15 with a change in the temperature from 100 to 400 K. The possible mechanisms providing the observed temperature dependence of the intensity and their relation to the specific features of energy transfer of electronic excitations in these crystals have been discussed. It has been revealed that the glow curves for all the crystals under investigation exhibit the main complex peak with the maximum at a temperature of 110–160 K and a number of weaker peaks with the composition and structure dependent on the crystal type. The nature of shallow trapping centers responsible for the thermally stimulated luminescence in the range below room temperature and their relation to defects in the lithium cation sublattice have been analyzed.     

Luminescence properties of transparent ceramics Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Yb

We present the results of studying the luminescence properties of transparent ceramics Y₃Al₅O₁₂:Yb obtained by the vacuum sintering and nanocrystalline technology. In the course of research, we measured the luminescence and luminescence excitation spectra, as well as the temperature and kinetic behavior of luminescence. Our results are analyzed in comparison with the characteristics of corresponding single crystals. We revealed that processes of generation and relaxation of electronic excitations that occur in ceramics, in particular, in the charge transfer state, are similar to processes occurring in crystals. The behavior of two charge-transfer luminescence bands at 340 and 490 nm is studied. In the range 300–600 nm, we revealed a broad emission band of radiation of other type, which is also observed in spectra of undoped ceramics. This broad band is attributed to F⁺ centers. Emission and excitation spectra of charge transfer luminescence at a maximum of the temperature dependence of 100 K are measured for the first time. We found that, upon excitation in the charge transfer band, luminescence in ceramics is more intense than in single crystals with similar concentrations of Yb and has a higher quenching temperature.     

Time-Resolved Vacuum Ultraviolet Spectroscopy of Er<Superscript>3+</Superscript> Ions in the SrF<Subscript>2</Subscript> Crystal

The photoluminescence and photoexcitation spectra as well as the luminescence decay kinetics of Er³⁺ ions in the visible ultraviolet and vacuum ultraviolet (VUV) regions have been studied by the method of low-temperature, time-resolved VUV-spectroscopy on excitation by synchrotron radiation. In the VUV spectral region of the luminescence of SrF₂:1% Er³⁺, the 146.5-nm band with a time of decay of less than 0.6 nsec was revealed together with the well-known emission band at 164.3 nm (decay constant in the microsecond range). Its possible nature is discussed. The specific features of the formation of photoexcitation spectra of the f-f and f-d transitions in the Er³⁺ ion are considered. Competition between the processes of excitation of f-f and d-f luminescence has been revealed. It manifests itself in the inverse relationship of their photoexcitation spectra in a range of energies of incident photons that are close to the position of the 4fⁿ⁻¹5d configuration levels. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 4, pp. 519–523, July–August, 2005.     

Luminescence and electronic excitations in Li<Subscript>6</Subscript>Gd(BO<Subscript>3</Subscript>)<Subscript>3</Subscript>: Ce<Superscript>3+</Superscript> crystals

This paper reports on a study of the luminescence emitted by Li₆Gd(BO₃)₃: Ce³⁺ crystals under selective photoexcitation to lower excited states of the host ion Gd³⁺ and impurity ion Ce³⁺ within the 100–500-K temperature interval, where the mechanisms of migration and relaxation of electronic excitation energy have been shown to undergo noticeable changes. The monotonic 10–15-fold increase in intensity of the luminescence band at 3.97 eV has been explained within a model describing two competing processes, namely, migration of electronic excitation energy over chains of Gd³⁺ ions and vibrational energy relaxation between the ⁶ I _j and ⁶ P _j levels. It has been shown that radiative transitions in Ce³⁺ ions from the lower excited state 5d ¹ to ² F _5/2 and ² F _7/2 levels of the ground state produce two photoluminescence bands, at 2.08 and 2.38 eV (Ce1 center) and 2.88 and 3.13 eV (Ce2 center). Possible models of the Ce1 and Ce2 luminescence centers have been discussed.     

Electro-Optic Coefficient Measurements for Zn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript> Te Single Crystals at 1550 nm Wavelength

Nonlinear optical materials of the type Zn _x Cd_1-x Te single crystals, where x = 0.0, 0.2, 0.4, 0.6, 0.7, 0.8, and 1.0, have been grown by the Bridgman method, using a vertical furnace. We have investigated the electro-optic (E-O) coefficient and refractive index of Zn _x Cd_1-x Te single crystals at optical communication wavelength (1550 nm). In the case of CdTe crystal, the E-O coefficient was 15.5 × 10^-12 m/V, which is the biggest among the E-O coefficients of Zn _x Cd_1-x Te crystals. The E-O modulation signal was very big in low frequency range (DC-100kHz), but the signal amplitude became smaller as we increased frequency above 100 kHz. We also found the acousto-optic modulation at CdTe single crystals.     

P2-type Na<Subscript>0.67</Subscript>Mn<Subscript>0.6</Subscript>Fe<Subscript>0.4-x-y</Subscript>Zn<Subscript>x</Subscript>Ni<Subscript>y</Subscript>O<Subscript>2</Subscript> cathode material with high-capacity for sodium-ion battery

The P2-type Na_0.67Mn_0.6Fe_0.4O₂ (NaMnFe), Na_0.67Mn_0.6Fe_0.3Zn_0.1O₂ (NaMnFeZn), and Na_0.67Mn_0.6Fe_0.2Zn_0.1Ni_0.1O₂ (NaMnFeZnNi) are prepared using an acetate decomposition reaction and developed as promising cathode materials for high-capacity sodium-ion batteries. The XRD patterns show that Zn²⁺ and Ni²⁺ ions are successfully incorporated into the lattice of the Na-Mn-Fe-O system, and the P2-type structure remains unchanged after substitution. The charging/discharging tests exhibit that the Na_0.67Mn_0.6Fe_0.4O₂, Na_0.67Mn_0.6Fe_0.3Zn_0.1O₂, and Na_0.67Mn_0.6Fe_0.2Zn_0.1Ni_0.1O₂ electrodes have the capacities of 200.4, 182.0, and 202.2 mAhg^?1, respectively. The Na_0.67Mn_0.6Fe_0.4O₂ electrode has a higher initial capacity but faster capacity decay. When partially substituting Zn and Ni for Fe, the Na_0.67Mn_0.6Fe_0.3Zn_0.1O₂ and Na_0.67Mn_0.6Fe_0.2Zn_0.1Ni_0.1O₂ electrodes exhibit lower reversible capacity but improved cycling stability (88.3 and 93.4% capacity retention over 100 cycles). The greatly improved electrochemical performance of the Na_0.67Mn_0.6Fe_0.2Zn_0.1Ni_0.1O₂ electrode apparently belongs to the contribution of the Zn²⁺ and Ni²⁺ substitution, which facilitates to alleviate the Jahn-Teller distortion of Mn and suppresses the polarization.     

Photostimulated luminescence flash: from scientific photography to photonics of nanostructured materials

We have analyzed the possibilities of using the phenomenon of photostimulated luminescence flash for optical diagnosing of energy levels of structural and impurity defects of semiconductor crystals and nanostructures. New data on the spectra of deep localized states associated with adsorbed few-atom clusters Zn _n on the surface of ZnS; clusters Cd _n , Cu _n , and Ag _n on the surface of CdS; and clusters Ag _n on the surface of AgBr(I) have been presented, as well as results of investigation of photostimulated assembling processes of few-atom clusters on the surface of crystals using this phenomenon. We are the first to show the potential of the luminescence flash technique for studying the mutual arrangement of the levels of dye molecules and the bands of the crystal on the surface of which they are adsorbed, as well as of the spectra of localized states in colloidal CdS semiconductor quantum dots.     

Synthesis and study of IR luminescence of Ln<Subscript>2</Subscript>O<Subscript>2</Subscript>S:Yb (Ln = Y,La, Gd) under laser excitation

The ranges of the existence of solid solutions in binary systems Ln₂O₂S-Yb₂O₂S(Ln = Y, La, Gd) were found and main features of variations of Stokes IR luminescence intensity of Ln₂O₂S·Yb in the range of 0.96–1.1 μm were determined depending on the composition during IR excitation. Based on the established features, a new Y₂O₂S:Yb monospectral IR phosphor was developed, which, upon excitation by a 0.940-μm laser, is characterized by an increased Stokes IR luminescence intensity in the range of 0.96–1.1 μm in comparison with that of known commercial phosphor.     

Energy transfer from the host to Er<Superscript>3+</Superscript> dopants in semiconductor SnO<Subscript>2</Subscript> nanocrystals segregated in sol–gel silica glasses

Undoped and Er³⁺-doped glass–ceramics of composition (100−x)SiO₂–xSnO₂, with x = 5 or 10 and with 0.4 or 0.8 mol% of Er³⁺ ions, were synthesised by thermal treatment of precursor sol–gel glasses. Structural studies were developed by X-Ray Diffraction. Wide band gap SnO₂ semiconductor quantum-dots embedded in the insulator SiO₂ glass are obtained. The mean radius of the SnO₂ nanocrystals, ranging from 2 to 3.2 nm, is comparable to the exciton Bohr radius. The luminescence properties have been analysed as a function of sample composition and thermal treatment. The results show that Er³⁺ ions are partially partitioned into the nanocrystalline phase. An efficient UV excitation of the Er³⁺ ions by energy transfer from the SnO₂ nanocrystal host is observed. The Er³⁺ ions located in the SnO₂ nanocrystals are selectively excited by this energy transfer mechanism. On the other hand, emission from the Er³⁺ ions remaining in the silica glassy phase is obtained by direct excitation of these ions.     

Synchrotron and laser excitation of luminescence in PbWO<Subscript>4</Subscript>:Tb crystals at different temperatures

The effect of temperature on the spectral luminescence characteristics of PbWO₄:Tb³⁺ crystals with synchrotron and laser excitation is studied. If PbWO₄:Tb³⁺ is excited by synchrotron radiation with λ = 88 nm at 300 K, a faint recombination luminescence of the impurity terbium is observed against the matrix luminescence. When the temperature is reduced to 8 K, the luminescence intensity of PbWO₄:Tb³⁺ increases by roughly an order of magnitude and the characteristic luminescence of the unactivated crystal is observed. Excitation of PbWO₄:Tb³⁺ by a nitrogen laser at 300 K leads to the appearance of emission from Tb³⁺ ions. At 90 K, a faint matrix luminescence is observed in addition to the activator emission. The formation of the luminescence excitation spectra for wavelengths of 60–320 nm is analyzed and the nature of the emission bands is discussed.