The System Ga2S3?Pr2O3

The diagram of state of Ga₂S₃? Pr₂O₃ has been investigated by the methods of differential thermal, high-temperature differential thermal, X-ray diffraction, microstructural and thermodynamic analyses and by measurement of microhardness of the samples. It has been found that the system is eutectic, the solubility on the part of Ga₂S₃ at 295 K reaches 8 mol.%. In the system the existence of one incongruently-melting compound of Ga₂S₃ · 2 Pr₂O₃ was found.     

The Ga2S3?;Eu2O2S System

By the methods of differential thermal, high-temperature differential thermal, X-ray phase shift, microstructural analyses and also by the measurement of microhardness and density interactions in Ga₂S₃? ;Eu₂O₂S system have been investigated. The existence of three new phases of composition (EuO)₂Ga₄S₇, EuGaOS₂, (EuO)₄Ga₂S₅ has been revealed in the system. The eutectic coordinates correspond to 12 mole-% of Eu₂O₂S and 1210 K. The solubility on the basis of Ga₂S₃ at 295 K reaches 1 mole-% of Eu₂O₂S.     

Phase equilibria in the SrS-Ga2S3 system

In the SrS-Ga₂S₃ system, there exist two individual compounds: SrGa₂S₄ (a = 2.084 nm, b = 2.050 nm, c = 1.220 nm; congruent melting at 1530 K) and Sr₂Ga₂S₅ (a = 1.253 nm, b = 1.203 nm, c = 1.117 nm; peritectic melting at 1330 K); both are orthorhombic. We discovered a compound of composition Sr₄Ga₂S₇; this compound crystallizes in cubic system with the unit cell parameter a = 0.6008 nm, space group Pa3, and decomposes by a solid-phase reaction at 870 K. Eutectic compositions are 42 and 73 mol % Ga₂S₃; eutectic melting temperatures are 1210 and 1170 K, respectively. The SrS solubility in γ-Ga₂S₃ at 1070 K reaches 4 mol %.     

Phase formation in the System Ga2S3–Eu2O3

The diagram of state of Ga₂S₃? Eu₂ O₃ system has been investigated by the methods of differential thermal, high-temperature differential thermal, X-ray phase shift, microstructural and thermodynamic analyses, measurement of microhardness and density of the samples. It has been established that the system is eutectic, the solubility at 295 K on the part of Gas₂S₃ reaches 7 mole-% of Eu₂O₃ and Ga₂S₃ · Eu₂ O₃ was found.     

The 3Ga<Subscript>2</Subscript>S<Subscript>3</Subscript>-EuLaGa<Subscript>3</Subscript>S<Subscript>7</Subscript> system

The La₂S₃-Ga₂S₃-EuS system has been investigated along the 3Ga₂S₃-EuLaGa₃S₇ join by physicochemical methods (DTA, X-ray powder diffraction, microstructural analysis). is a quasi-binary eutectic-type section of the ternary system. Solubility on the base of both components has been revealed in the system. Solubility at room temperature is 3 mol % EuLaGa₃S₇ on the Ga₂S₃ side 1.5 mol % Ga₂S₃ and on the base of the EuLaGa₃S₇ compound. The coordinates of the eutectic point are 80 mol% EuLaGa₃S₇ and 1020 K.     

Phase diagram of the Pb5Sb4S11-Pb2SnSb2S6 system

The Pb₅Sb₄S₁₁-Pb₂SnSb₂S₆ system was studied by a number of physicochemical methods, and its phase diagram was constructed. It was found that the system under investigation is a quasi-binary eutectic type section of the SnS-PbS-Sb₂S₃ ternary system. The coordinates of the eutectic are found to be 33 mol % Pb₅Sb₄S₁₁ and 750 K. Regions of solid solutions based on Pb₅Sb₄S₁₁ (6 mol % Pb₂SnSb₂S₆) and Pb₂SnSb₂S₆ (4 mol % Pb₅Sb₄S₁₁) were determined.     

Phase equilibrium in the Pb2SnSb2S6-SnS system

The Pb₂SnSb₂S₆-SnS system was studied over a wide range of concentrations using a set of physicochemical methods (powder X-ray diffraction, DTA, microstructure examination, and microhardness measurement). A phase diagram for the title quasi-binary join was constructed for the first time. The phase diagram is of the eutectic type; the eutectic coordinates are 25 mol % SnS and 775 K. The extents of solid solutions based on the terminal components were determined to be 10 mol % SnS and 5 mol % Pb₂SnSb₂S₆. Alloys having compositions in the SnS-based solid solution region are semiconductors.     

Effect of inert components (Y2O3, Al2O3, and Ga2O3) on the chemistimulating effect of the Sb2O3 activator of GaAs thermal oxidation

Chemistimilated thermal oxidation of gallium arsenide was studied using Sb₂O₃ activator oxide in compositions with Ga₂O₃, Al₂O₃, and Y₂O₃ inert components. For Sb₂O₃-Y₂O₃ compositions, the thickness of the resulting oxide layer on GaAs was found to be a linear function of composition over the enter range of the compositions. For antimony oxide compositions with Ga₂O₃ and Al₂O₃ inert components, nonadditivities were observed near the component ordinates. For the Sb₂O₃-Ga₂O₃ system, the chemistimulating efficiency noticeably weakened at low concentrations of the inert component. The linear trend observed for this system within 0–60 mol % Sb₂O₃ is additively determined by the oxide layer thickness on GaAs in the presence of Sb₂O₃ and in the absence of activator. In the presence of inert Al₂O₃, the chemistimulating effect was enhanced near the Al₂O₃ ordinate and the resulting function was nonadditive with respect to the thicknesses reached in the presence of the individual components.     

Phase relations in the pseudobinary system TiO2Ga2O3

Phase relations and microstructures in the TiO₂-rich part of the TiO₂Ga₂O₃ pseudobinary system have been determined at temperatures between 1373 and 1623°K using X-ray diffraction and electron and optical microscopy. The phases occurring in the system are TiO₂ (rutile), β-Ga₂O₃, a series of oxides Ga₄Ti_m?4O_2m?2 (m odd) which exist above 1463°K, and Ga₂TiO₅, which exists above 1598°K. The width of the phase region occupied by the Ga₄Ti_m?4O_2m?2 phases varies with temperature. At 1473°K it is narrow, and has limits of Ga₄Ti₂₅O₅₆ to Ga₄Ti₂₁O₄₈ while at higher temperatures it broadens to limits of from Ga₄Ti₂₇O₆₀ to Ga₄Ti₁₁O₂₈ at 1623°K. These phases are often disordered and crystals frequently contain partially ordered intergrowths of oxides with various values of m. On the TiO₂-rich side of the phase region there is a continuous change in texture from rutile to the end members of the Ga₄Ti_m?4O_2m?2 structures. The findings are summarized on a phase diagram.     

Interactions of Cr2S3 with GeS2 and Cu2GeS3

The interactions in the GeS₂-Cr₂S₃ and Cu₂GeS₃-Cr₂S₃ sections were studied by differential thermal analysis and X-ray powder diffraction. The GeS₂-Cr₂S₃ section was shown to be quasi-binary, with a degenerate eutectic; no ternary compound was formed. In the Cu₂GeS₃-Cr₂S₃ section, a quaternary phase of variable composition having a homogeneity range of 69–75 mol % Cr₂S₃ crystallized in the cubic system. The samples of this composition are spin glasses with freezing temperatures of 20–25 K.     

MnS-Ln2S3 (Ln = La, Nd, or Gd) phase diagrams; thermodynamics of phase transitions

The MnS-La₂S₃ phase diagram has been constructed where the incongruently melting compound Mn₂La₆S₁₁ is formed. Complex sulfide Mn₂La₆S₁₁ is characterized by monoclinic structure; its incongruent melting temperature is 1535 K. Eutectic coordinates are 31 mol % La₂S₃, 1490 K. The extent of the ??-La₂S₃ based solid solutions at 1570 K is 8 mol % MnS; at 770 K, ??-La₂S₃ dissolves 3 mol % MnS. The MnS-Gd₂S₃ system is a eutectic with limited solid solutions. Eutectic coordinates are 35.5 mol % Gd₂S₃, 1640 K. Solubility in ??-Gd₂S₃ is 28 mol % MnS at 1570 K, in ??-Gd₂S₃ is 13 mol % MnS at 1170 K, and in MnS is 1 mol % Gd₂S₃. Thermochemical equations have been composed for eutectic and eutectoid phase transformations. A MnS-Nd₂S₃ phase diagram has been predicted.     

Synthesis and characterization of the new uranium yttrium oxysulfide UY4O3S5

Red needles of UY₄O₃S₅ have been synthesized by the solid-state reaction at 1273 K of UOS and Y₂S₃ with Sb₂S₃ as a flux. UY₄O₃S₅ adopts a three-dimensional structure that contains five crystallographically unique heavy-atom positions. U and Y atoms disorder on one eight-coordinate metal position bonded to four O atoms and four S atoms and two seven-coordinate metal positions bonded to three O atoms and four S atoms. Another eight-coordinate metal position with two O and six S atoms and one six-coordinate metal position with six S atoms are exclusively occupied by Y atoms. UY₄O₃S₅ is a modified Curie-Weiss paramagnet between 1.8 and 300 K. Its effective magnetic moment is estimated to be 3.3(2) μ_B. UY₄O₃S₅ has a band gap of 1.95 eV. The electrical resistivity along the [010] direction of a single crystal shows Arrhenius-type thermal activation with an activation energy of 0.2 eV.     

Phase diagrams of sections in the EuS-Cu2S-Nd2S3 system

Phase equilibria in the EuS-Cu₂S-Nd₂S₃ system were studied in an isothermal (970 K) section and NdCuS₂-EuS and Cu₂S-EuNdCuS₃ polythermal sections. The complex sulfide EuNdCuS₃ has an orthorhombic crystal lattice (space group Pnma; a = 1.10438(2) nm, b = 0.40660(1) nm, c = 1.14149(4) nm), is isostructural to BaLaCuS₃, and melts incongruently at 1470 K: EuNdCuS₃ (0.50 EuS; 0.50 NdCuS₂) ai 0.18 EuS ss (0.88 EuS; 0.12 NdCuS₂) + 0.82 L (0.415 EuS; 0.585 NdCuS₂); ΔH = 17.8 kJ/mol. Within the range 0.5 mol % EuS, EuNdCuS₃-based solid solutions were not found. At 970 K, the tie lines pass from the compound EuNdCuS₃ to Cu₂S, EuS, NdCuS₂, and EuNd₂S₄ phases and lie between the NdCuS₂ phase and solid solutions (ss) of γ-Nd₂S₃ with EuNd₂S₄. Eutectics are formed between the compounds NdCuS₂ and EuNdCuS₃ at 32.0 mol % EuS T = 1318 K and between the compounds Cu₂S and EuNdCuS₃ at 20.5 mol % EuNdCuS₃ and T = 1142 K. Five main subordinate triangles were identified in the system.     

Vaporization chemistry and thermodynamics in the CdGa2S4-Ga2S3 system

The chemistry and thermodynamics of vaporization of CdGa₂S₄(s), CdGa₈S₁₃(s), and Ga₂S₃(s) were studied by computer-automated, simultaneous Knudsen-effusion and torsion-effusion, vapor pressure measurements in the temperature range 967–1280 K. The vaporization was incongruent with loss of Cd(g) + 1/2 S₂(g) and production of CdGa₈S₁₃(s), a previously unknown compound, in equilibrium with CdGa₂S₄(s), until the solid became CdGa₈S₁₃ only. Then, incongruent vaporization continued with production of Ga₂S₃(s) until the solid was Ga₂S₃ only. The latter vaporized congruently. The ΔH°(298 K) of combination of one mole of CdS(s) with one mole of Ga₂S₃(s) to give CdGa₂S₄(s) was ?22.6 ± 0.9 kJ mole^?1. The 2H2(298 K) of combination of one mole of CdS(s) with four moles of Ga₂S₃(s) to give CdGa₈S₁₃(s) was ?25.5 ± 1.1 kJ mole^?1. The 2H2(298K) of CdGa₈S₁₃(s) with respect to disproportionation into CdGa₂S₄(s) and 3 Ga₂S₃(s) was ?2.8 ± 0.6 kJ mole^?1. CdGa₈S₁₃(s) was not observed at room temperature. The 2H2(298 K) of vaporization of the residual Ga₂S₃(s) was 663.4 ± 0.8 kJ mole^?1, which compared well with a value of 661.4 ± 0.3 kJ mole^?1 already available from the literature. Implications of small variations in stoichiometry of compounds in this study were observed and are discussed.     

SnSbBiTe4-2Bi2Te3 join of the SnTe-Bi2Te3-Sb2Te3 quasi-ternary system

This is the first study of the SnSbBiTe₄-2Bi₂Te₃ join of the SnTe-Bi₂Te₃-Sb₂Te₃ quasi-ternary system by the methods of complex physicochemical analysis over a wide range of concentrations. A phase diagram was constructed for the title quasi-binary join. The system was found to be of the eutectic type; the eutectic coordinates are 65 mol % Bi₂Te₃ and 675 K. The starting components were shown to form solid solutions with extents of 20 mol %. Alloys with compositions lying within the Bi₂Te₃-based solid solution region were found to be n-type semiconductors.     

Phase diagram of the In3As2Se6-In3As2S3Se3 system

The In₃As₂Se₆-In₃As₂S₃Se₃ system has been investigated by methods of physicochemical analysis (DTA, X-ray powder diffraction, MSA) and by microhardness and density measurements. The phase diagram of the system, which is the quasi-binary section of the As-In-S-Se quaternary system, has been constructed. The region of the In₃As₂Se₆-based solid solutions is extended to 7 mol %, and the In ₃As₂S₃Se₃-based region to 15 mol %. A new quaternary compound In₆As₄S₃Se₉ is found in the system. Original Russian Text ? I.I. Aliev, R.S. Magammedragimova, A.A. Farzaliev, Dzh. Veliev, 2009, published in Zhurnal Neorganicheskoi Khimii, 2009, Vol. 54, No. 4, pp. 691–694.     

Tl2S-Sb2S3-Bi2S3 quasi-ternary system

The Tl₂S-Sb₂S₃-Bi₂S₃ quasi-ternary system (system A) was studied using DTA, X- ray powder diffraction, microstructure examination, and microhardness measurements. TlSbS₂-Tl₄Bi₂S₅(TlBiS₂, Bi₂S₃), Sb₂S₃-TlBiS₂, Tl₃SbS₃-TlBiS₂(Bi₂S₃), and [TlSb_0.5Bi_0.5S₂]-Tl₂S isopleths; isothermal sections at 500 K; and liquidus surface projection of system A were constructed. Characteristic features of the title system are extensive fields of solid solutions extended along the TlSbS₂-TlBiS₂ quasi-binary section and a continuous solubility belt 1–2 mol % wide extended along the Sb₂S₃-Bi₂S₃ binary subsystem. Primary separation fields of phases and the types and coordinates of invariant and monovariant equilibria in system A were determined.     

Sm2O3Ga2O3 and Gd2O3Ga2O3 phase diagrams

Four definite compounds exist in the Sm₂O₃Ga₂O₃ binary phase diagram, namely: Sm₃GaO₆, Sm₄Ga₂O₉, SmGaO₃, and Sm₃Ga₅O₁₂. The $\text{3}\text{1}$ compound is orthorhombic (space group Pnna - Z.4) with the cell parameters: a = 11.40₀Å, b = 5.51₅Å, c = 9.07Å and belongs to the oxysel family. Sm₃GaO₆ and SmGaO₃ melt incongruently at 1715 and 1565°C; Sm₄Ga₂O₉ and Sm₃Ga₅O₁₂ have a congruent melting point at 1710 and 1655°C. With regard to the Gd₂O₃Ga₂O₃ system three definite compounds have been identified: Gd₃GaO₆, Gd₄Ga₂O₉, and Gd₃Ga₅O₁₂. Only the garnet melts congruently at 1740°C with the following composition: Gd_3.12Ga_4.88O₁₂. Gd₃GaO₆, and Gd₄Ga₂O₉ melt incongruently at 1760 and 1700°C. GdGaO₃ is only obtained by melt overheating which may yield an equilibrium or a metastable phase diagram.     

Optical properties of (Y1−xTmx)3GaO6 and subsolidus phase relation of Y2O3-Ga2O3-Tm2O3

A serial of samples in Y₂O₃-Ga₂O₃-Tm₂O₃ pseudo-ternary system are prepared by solid-state chemical reaction method. The range of solid solution in (Y_1−xTm_x)₃GaO₆ is 0<x<0.384. Powder X-ray diffraction shows that the compounds crystallize in Gd₃GaO₆ (Cmc2₁)-type structure. The solid solubilities of Y_3+xGa_5−xO₁₂ (x=0-0.77) and Tm_3+xGa_5−xO₁₂ (x=0-0.62) are 37.5-47.11 at% Y₂O₃, and 37.5-45.26 at% Tm₂O₃, respectively. PL spectra of Tm-doped Y₃GaO₆ show that there is a sharp blue emission at ∼456 nm from the ¹D₂→³F₄ transition at room temperatures with two lifetimes (∼5 and ∼15 μs) and a narrow saturation range of PL intensity for the Tm³⁺ content from x=0.005 to 0.03. The sharp emission and long lifetime of (Y_1−xTm_x)₃GaO₆ indicate that Y₃GaO₆ is a potential phosphor and laser crystal host material.