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采用由脉冲负偏压调节的等离子体增强化学气相沉积方法,以硅烷为源气体,在玻璃基片上沉积得到了多孔二氧化硅薄膜。将反应过程中加在沉积区域的脉冲偏压固定在-350V,当占空比从0.162增大到0.864时,薄膜样品的形貌、成份和结构均不相同。扫描电镜照片表明,组成多孔氧化硅薄膜的颗粒在占空比增大时变得细腻,并且薄膜整体变得多孔且蓬松。拉曼光谱和红外光谱结果显示,薄膜样品中的非晶硅和Si-H键在较高的占空比下减弱甚至消失。占空比升高时氧化硅桥键所占比例持续增加。 相似文献
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1.一般介绍象增强器是电子光学器件。它可以用电子学方法增强聚焦在光电阴极上的景物图象。增强了的图象显示在荧光屏上。象增强器由光电阴极、电子光学透镜和荧光屏组成。现有两种类型的被动式象增强器: a)第一代被动式象增强器(单级和三级级联,均为倒象式); 相似文献
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本文介绍了一种识别图象的方法-Hough变换以及一些二维图形在Hough空间中的特征和用Hough变换识别二维图象。 相似文献
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全息照相再现实象分析胡德敬(同济大学物理系上海200092)本文根据全息照相的成像理论对再现实像的形成条件、最佳记录光路、观察方法和特点作一分析,其结果和实验一致.一、理论根据图1中全息干板位于xoy平面,物点和参考光波源分别用O(x0,y0,x0)... 相似文献
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本文提出了用电荷耦合器件(CCD)象传感器检测时变强度分布的方法。已经证实,在电荷存贮周期内对时变强度积分而得到的光电探测器元件的瞬时输出,可以再现时变强度。采用正弦型调相激光时,这种检测方法不同于测量光学表面的轮廓分布。 相似文献
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��ɯɯ���� �죬κ �ڣ�������������ʤ 《核聚变与等离子体物理》2014,34(3):275-281
Polycrystalline silicon thin film formation from inductively coupled plasma enhanced chemical vapor deposition system was studied. The dilution effect of H2 on film deposition was discussed. The X-ray diffractometry, Raman spectra and scanning electron microscope measurement were carried out to analyze the influence of H2 on the microstructures and the topography of polycrystalline silicon thin films. The optimum conditions for polycrystalline silicon thin films deposition were also discussed. The results indicated that polycrystalline silicon thin films with columnar structure crystals were fabricated on glass substrate. The deposition rate exhibited monotonic increase with Silane ratio R, a maximum deposition rate of 0.65nm⋅s-1 was obtained. However, the crystal volume fraction of polycrystalline silicon thin films initially increased from 60.5% to 67.3%, and then slightly decreased with the increase of R. Therefore, the crystal has a maximum value of 67.3% at R=4.8%. The polycrystalline silicon thin films had a compact and well-arranged structure at this ratio. This structure can also increase carrier mobility and improve the efficiency of solar cells. 相似文献