Effect of silver doping on the structure and phase separation of sulfur-rich As–S glasses: Raman and SEM studies

We report on the structural details and microphase separation of the bulk glasses Ag_x·(As₃₃S₆₇)_100-x for 0x25. Glass–glass phase separation occurs over a wide range of Ag content, i.e. 4x20. An off-resonant polarized Raman spectroscopic study has been carried out to elucidate structural aspects at the short- and medium-range structural order of the glasses. Analysis of Raman spectra revealed quantitative changes of the sulfur-rich microenvironments that reduce upon adding Ag. Scanning electron microscopy combined with X-rays microanalysis have been utilized to examine the type and extent of phase separation, and to provide quantitative details on the atomic concentrations in the Ag-poor and Ag-rich phases. It has been shown that at 7 at.% Ag the Ag-rich phase percolates through the structure; this effect can be associated with an ionic-to-superionic behavior of these glasses in accordance with similar studies on the stoichiometric arsenic sulfide glass; although the phase separation observed in the present glasses is qualitatively different.     

Infrared attenuated total reflection spectroscopy studies of aprotic condensation of (EtO)3SiRSi(OEt)3 and RSi(OEt)3 systems with carboxylic acids

Aprotic hydrolysis and condensation reactions of bis end-capped trialkoxysilanes ((EtO)₃SiRSi(OEt)₃), linked via the organic chain R containing urea groups chemically bonded to a poly(propyleneglycol) (PPG) chain, in the presence of carboxylic acids, i.e. acetic-, chlorodifluoroacetic- and trifluoroacetic acids, were studied using infrared attenuated total reflection (IR ATR) spectroscopy. IR and ²⁹Si NMR spectral analysis revealed solvolysis reactions: the carboxylic acids interacted with ethoxysilane groups forming silyl esters leading to the formation of bridging SiOSi groups and carboxylic acid ester by-products. These results were compared with those obtained on simpler single capped methyltriethoxysilane (MeSi(OEt)₃, MTEOS) condensed with trifluoroacetic acid. Gelation of (EtO)₃SiRSi(OEt)₃ (catalyzed with acetic acid) encapsulated between a transparent conductive oxide (TCO) glass and a conductive and IR transparent silicon wafer was followed with the help of IR reflection–absorption spectroscopy. The results revealed that aprotic solvolysis of the hybrid precursor with acetic acid led to the formation of non-aqueous gels with low silanol content, confirming the advantages of aprotic solvolysis of organic–inorganic hybrids used as redox electrolytes in hybrid electrochromic (EC) and dye-sensitized photoelectrochemical (DSPEC) cells. Some comments regarding the accuracy of IR ATR spectral measurements compared to IR transmission spectra are also given.     

Glasses in the SiOCN system produced by pyrolysis of polycyclic silazane/siloxane networks

In this work, polycyclic silazane/siloxane networks bearing SiO and SiN bonds were synthesized, via hydrosilylation reaction, from cyclotrisilazane, [CH₂CH(CH₃)SiNH]₃, and cyclotetrasiloxane, [CH₃(H)SiO]₄, with different SiH:Sivinyl molar ratios. The resulting polymers were pyrolyzed up to 1000 °C, in N₂ atmosphere, producing SiOCN glasses. The polymer-to-ceramic transformation was studied by thermogravimetry (TG), Fourier transform infrared spectroscopy (FTIR), and chemical analysis. The 1000–1500 °C, high temperature structural evolution was also studied using X-ray diffraction (XRD) and FTIR. The hydrosilylation reaction produced ethylenic bridge crosslinked polymeric precursors with good thermal stability. The SiOCN glasses obtained with ceramic yields higher than 80 wt% showed spectra absorptions of SiN, SiO, and SiC bonds in FTIR. The XRD patterns of the products obtained at 1500 °C displayed diffraction peaks characteristic of β-SiC and a broad halo centered at 22° (2θ), due to the amorphous silica phase. β-SiC diffraction peaks in the XRD patterns were more intense for the precursor richer in polysiloxane units, although absorptions of SiN, SiC, and SiO bonds were also observed in the FTIR spectra. Thus, the final materials were characterized as SiC/SiOCN composites in nano/amorphous phases.     

Structural characterization of lanthanum aluminosilicate glasses by 29Si solid-state NMR

We investigate the network structures of LaSiAlO glasses by ²⁹Si magic-angle-spinning (MAS) nuclear magnetic resonance (NMR). Their compositions span most of the glass-forming region of the ternary La₂O₃Al₂O₃SiO₂ system at 1600 °C. The ²⁹Si NMR resonances narrow and become progressively deshielded when Al substitutes for Si in the network, as well as for increasing La-content of the glass, which leads to network depolymerization. We compare experimental and calculated center of gravities of the ²⁹Si NMR peaks, the latter generated from different simplified models for the distributions of Al and Si as well as bridging oxygen (BO) and non-bridging oxygen (NBO) atoms over the networks. The data do not permit accurate quantifications and may only be interpreted in limiting scenarios. However, they indicate that both distributions are essentially randomized, implying a clear deviation of the Al/Si ordering from that according to a Loewenstein Al-avoidance, coupled with a nearly uniform partitioning of the NBO atoms between Al and Si tetrahedra.     

Metalorganic chemical vapor deposition of mesoporous SiTiOC nanostructured thin films

SiTiOC mesoporous thin films have been obtained by metalorganic chemical vapor deposition (MOCVD) using titanium iso-propoxide (TIP) and tetraethylorthosilicate (TEOS) as starting precursors. The influences of both carrier gas and deposition temperature on the properties of the produced films were extensively studied. The low-angle XRD analysis confirms that, all produced films under different conditions (gas type and temperature) have the mesoporous structure. However, the deposition temperature was found to be much effective in controlling both morphology and composition of the final films than the type of carrier gas. The morphology of the produced films was totally converted from spherical shape-like nanoparticles at 700 °C to lengthy at higher temperature of 1000 °C. The SEM-EDX investigations proved that the composition of the produced films was composed of SiTiOC structure system. The PL analysis has demonstrated along with FT-IR data that all the deposited films at various deposition parameters were composed mainly of SiO₂, SiOC, SiC, TiO₂ and TiOC bond structures and most probably nanocomposite SiTiOC system thin films.     

Transparent K2OTiO2P2O5SiO2 monolithic gels and inorganic amorphous solids through incomplete hydrolysis

Sol–gel derived transparent glasses are of technological interest because of its precisely controlled composition for multicomponent glasses at low temperature processing. The present work demonstrates a new and simple methodology for preparing transparent multicomponent oxide gels by incomplete hydrolysis of alkoxides. Through this processing, a small quantity of organic agencies resulted from incomplete hydrolysis of alkoxides self-disperses in inorganic oxide network, and thus control the formation of the monolith gel free of cracks. Specially, K₂OTiO₂P₂O₅SiO₂ gel monoliths have been synthesized through this route. The gels transformed into transparent K₂OTiO₂P₂O₅SiO₂ inorganic amorphous solids after heat treatment above 450 °C. This approach could be applied to many other multicomponent oxides.     

First principles study of oxygen-deficient centers in pure and Ge-doped silica

Using ab initio calculations on 108 atoms pure- and Ge-doped (2.8 mol%) silica-based supercells, we performed a statistical study on the electronic structure and energetic contribution of neutral oxygen vacancies, also named Oxygen Deficient Centers (ODCs). All the 72 oxygen sites in the amorphous silica (a-SiO₂) cell were considered as possible candidates for the formation of the vacancies leading to study 72 different Si-ODCs (SiSi bond) and 144 Ge-ODCs (GeSi bond). The distributions of structural parameters and formation energies of the ODCs were evaluated through Density Functional Theory calculations. The obtained parameters showed a wide distribution that can be mainly associated with the differences in the local environments surrounding the point defects. We show that the formation energies of Si and Ge-ODCs generated from the same oxygen site of our supercell are correlated. Moreover, the local asymmetry around the SiGe or GeSi bond can also affect their formation energies, providing a strong evidence for the influence of short-range environment on the ODC generation efficiency.     

Density studies of liquid alloys SnAg and SnZn with near eutectic compositions

The density values for SnAg and SnZn alloys with near eutectic compositions were determined by the gamma-absorption method both in the liquid and solid states. Sn-rich melts of the AgSn system were found to be microheterogeneous, whereas SnZn melts demonstrate the behavior typical for true solutions.     

Structure and optical properties of chalcohalide glasses doped with Pr and Yb ions

Glasses of systems 100-y((GeS₂)₈₀(Sb₂S₃)_20−x(PbI₂)_x)yPr₂S₃, x = 0; 2; 5, 8; y = 0; 0.01; 0.1; 0.5 and 99.9-z((GeS₂)₈₀(Sb₂S₃)₁₈(PbI₂)₂)0.1Pr₂S₃zYb₂S₃, z = 0.05; 0.1; 0.15) were synthesized in high purity. Optically well transparent glasses were obtained for x  5 mol.% PbI₂, for y  0.1 mol.% Pr₂S₃ and for z  0.15 mol.% Yb₂S₃. The glasses were stable and homogeneous, as confirmed by X-ray diffraction and electron microscopy, with high optical transmittivity from visible (red) region up to infrared region (900 cm⁻¹). The density of the glasses was 3.26–3.33 gcm⁻³ for PbI₂ containing glasses. The glass transition temperature, T_g, was 320–336 °C. The optical absorption bands in rare-earth doped glasses corresponded to ³H₄–³F₄, ³H₄–³F₃, ³H₄–(³F₂ + ³H₆) f–f electron transitions of Pr³⁺ ions and to ²F_7/2–²F_5/2 f–f electron transitions of Yb³⁺ ions. Strong luminescence band with maximum near 1340 nm (electron transition ¹G₄–³H₅) was found in Pr₂S₃ doped glasses. The intensity of this band was rising with doping by Yb³⁺ ions. The possible mechanism of the luminescence enhancement is suggested.     

Growth and characterization of pendeo-epitaxial GaN on 4H–SiC substrates

Growth on AlN/4H–SiC substrates of coalesced, non-polar GaN films having volumes of material with reduced densities of dislocations and stacking faults has been achieved from etched stripes via the statistical and experimental determination of the effect of temperature and V/III ratio on the lateral and vertical growth rates of the GaN{0 0 0 1} faces combined with pendeo-epitaxy. AFM of the uncoalesced GaN(0 0 0 1) and GaN vertical faces revealed growth steps with some steps terminating at dislocations on the former and a pitted surface without growth steps, indicative of decomposition, on the latter. Coalescence was achieved via (a) a two-step route and the parameters of (1) and V/III=1323 for 40 min and (2) 1020 °C and V/III=660 for 40 min and (b) a one-step route that employed and a V/III ratio=660 for 6 h. The densities of dislocations in the GaN grown vertically over and laterally from the stripes were 4×10¹⁰ cm⁻² and 2×10⁸ cm⁻², respectively; the densities of stacking fault in these volumes were 1×10⁶ cm⁻¹ and 2×10⁴ cm⁻¹, respectively. The defects in the wing material were observed primarily at the bottom of the film where lateral growth of the GaN occurred from the AlN and the SiC. Plan view AFM also revealed different microstructures and a reduction in the RMS roughness values from 1.2 to 0.95 nm in these respective regions.     

IR and ESR investigations on V2O5–P2O5–BaO glass system with opto-electronic potential

The changes observed in the IR and ESR spectra of the xV₂O₅(1 ? x)[0.8P₂O₅ ? 0.2BaO] glass system with 0 ≤ x ≤ 50 mol% show that vanadium oxide acts as a network modifier at low concentration (x ≤ 5 mol%) and as a network former for high content (x ≥ 10 mol%). Thus the IR bands belonging to the phosphate groups are strongly reduced except the specific bands of the short chain phosphate units due to the phosphate network depolymerization and the spectra are dominated by the vibrations characteristic for POP, POV and VOV linkages. At the same time the changes observed in the ESR spectra of these glasses are explained supposing the superposition of two signals, one with a well-resolved hyperfine structure typical for isolated V⁴⁺ ions and a broad line characteristic for clustered ions. The line width dependence versus V₂O₅ content shows that dipole–dipole interactions exist between vanadium ions until x = 5 mol% and the superexchange interactions prevail at high content (x > 10 mol%).     

Relationship between the short-range order and electrical resistivity in liquid indium-antimony

The composition dependencies of local structure and electronic structure, as well as the electric resistivity of liquid indium-antimony alloys have been investigated by the first-principles molecular dynamics simulations. It is shown that the variations of InIn, InSb and SbSb coordination tendency and the projected density of states of In and Sb in liquid In_xSb_1 ? x depend on the Sb concentration, and electric resistivity of liquid indium-antimony also reveals a regular change trends as a function of Sb concentration. Further analysis confirmed that there are explicit relationships between the short range structural parameters and electrical resistivities in liquid In_xSb_1 ? x.     

Preparation,crystallization behavior and magnetic properties of nanoparticles magnetic glass–ceramics in the systems Fe2O3 CoO MnO2, Fe2O3 NiO MoO3 and Fe2O3 CoO V2O5

Ferrimagnetic glass–ceramics were prepared in the systems Fe₂O₃ CoO MnO₂ (S1), Fe₂O₃ NiO MoO₃ (S2) and Fe₂O₃ CoO V₂O₅ (S3). Small amount of H₃BO₄ was added to make the melting process easier. The samples were characterized using DTA, XRD, TEM and EDX. Sequence of crystallization was studied by applying heat-treatment at 800 and 1000 °C for 4 h. CoFe₂O₄ with crystallite sizes of ≈ 14–20 nm was successfully prepared beside FeCoOBO₃ and Co₃BO₅ in S1. NiMoO₄, (FeNi₂)O₂(BO₃) and NiO with crystallite size ≈ 56–79 nm were crystallized in S2. CoFe₂O₄, FeCoOBO₃ and Co₃BO₅ with crystallite size ≈ 6–8 nm were crystallized in S3. Magnetic hysteresis cycles were analyzed with a maximum applied field of 20 kOe at room temperature. From the obtained hysteresis loops Ms records higher values for S1 and S3 and lower value for S2, while coercivity reach maximum for S2. The variable, magnetic, data range gives a wide range for different applications.     

Study of elastic moduli of lithium borobismuthate glasses using ultrasonic technique

Ultrasonic studies on x B₂O₃25 Li₂O(75 − x) Bi₂O₃, (0 ≤ x ≤ 75 mol%) glasses have been carried out. The elastic moduli of glasses have been investigated using ultrasonic velocity measurements at 4 MHz. The results revealed an increase of the ultrasonic velocity and Debye temperature with the increase of the B₂O₃ content which was attributed to the increase in the packing density, the local contraction of the network around the Bi and Li cations and the increase of the number of bonds per unit volume. Also, the increase of the elastic moduli with the increase in the B₂O₃ content is affected with the increase in the dissociation energy, the average cross-link density, the increase in the number of bridging oxygen atoms, and the substitution of high bond strength BO with low bond strength BiO. The optical properties such as the refractive index, the energy gap and the optical polarizability were evaluated from the values of the elastic moduli. It was observed that as the bulk modulus increases, the optical energy gap increases and both the refractive index and the optical basicity decrease.     

Interplay of ballistic and chemical effects in the formation of structural defects for Sn and Pb implanted silica

The electronic structures of Sn and Pb implanted SiO₂ are studied using soft X-ray absorption (XAS) and emission (XES) spectroscopy. We show, using reference compounds and ab initio calculations, that the presence of PbO and SnO interactions can be detected in the pre-edge region of the oxygen K-edge XAS. Via analysis of this interaction-sensitive pre-edge region, we find that Pb implantation results primarily in the clustering of Pb atoms. Conversely, with Sn implantation using identical conditions, strong SnO interactions are present, showing that Sn is coordinated with oxygen. The varying results between the two ion types are explained using both ballistic considerations and density functional theory calculations. We find that the substitution of Pb into Si sites in SiO₂ requires much more energy than substituting Sn in these same sites, primarily due to the larger size of the Pb ions. From these calculated formation energies it is evident that Pb requires far higher temperatures than Sn to be soluble in SiO₂. These results help explain the complex processes which take place upon implantation and determine the final products.     

Surface morphology of as-deposited and illuminated As–Se chalcogenide thin films

The role of the composition and of the related changes of the structure in the formation of the surface of amorphous As_xSe_1−x (0 < x < 0.5) layers before and after light treatment was investigated by direct measurements of the surface roughness at nanometer-scale and surface deformations at micrometer-scale under influence of illumination. It was established that the surface roughness of the films, deposited by vacuum thermal evaporation, decreased with increasing As content, especially in compositions 0.1  x  0.3, where the maximum light stimulated surface deformations (localized expansion) occurs. Both relate to the rigidity percolation range and the maximum photoplastic effects, which are not directly connected to the known photodarkening effect, since it is minimal for these compositions.     

Heteroepitaxial growth of Cu2O thin film on ZnO by metal organic chemical vapor deposition

Cuprous oxide (Cu₂O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C₅HF₆O₂)₂] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu₂O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)_Cu2O(0 0 0 2)_ZnO; [0 0 1]_Cu2O[1 2¯ 1 0]_ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p–n junction solar cells or diodes.     

Characterization of deposits produced by TEA CO2 pulsed laser ablation of silicon mono- and dioxide

Silicon based deposits were prepared by TEA CO₂ pulsed laser ablation (PLA) of SiO and SiO₂ targets in the atmosphere of selected gases (N₂, He, Ne, Ar, Kr). These deposits possess high specific area of several hundreds m² per gram. Owing to the high specific area, some chemical groups and hydrogen related radical were detected by means of FTIR and EPR analyses and theoretical calculations: silyl (E′ center) Si, silylen Si:, silanon SiO, POL (peroxy linkage) SiOOSi and/or NBOHC (non-bridging oxygen hole center) SiO, POR (peroxy radical) SiOO and dioxysilirane Si(O)₂. In SiO₂ deposits the concentration of silyl Si resp. POR SiOO was determined to be 5.8 × 10¹⁸/g resp. 6.2 × 10¹⁹/g. In SiO deposits the ratio [Si:]:[Si] = (3.1-5.7) × 10¹⁹/g: (5.3-9.8) × 10¹⁹/g was measured. Estimated concentration of [Si] in deposits was increased nearly five times in comparison with SiO target. After exposure of the SiO deposits to H₂ EPR doublet with hyperfine splitting of 7.7 mT was observed. The best agreement between calculated theoretical and experimental values was found for the model [(HO)₃SiO]₂HSi. FTIR measurements and calculations of the silanol theoretical model clusters enabled us to discuss the chemical surroundings of the silanol and to determine the defects in the deposits.     

The effects of ZnCl2 and ErCl3 on the vibrational spectra and structure of tellurite glasses

A series of zinc tellurite glasses, containing up to 40 mol% ZnCl₂ and doped with 1–10 mol% ErCl₃, was prepared by melting and casting and their structure was analyzed by polarized Raman and variable incidence infrared reflection spectroscopies. Kramers–Kronig analysis of the infrared reflectivity led to the identification of the vibrational mode components. The Raman spectra are dominated by an intense, depolarized boson peak at ∼45 cm⁻¹ and a high frequency, polarized peak at ∼767 cm⁻¹. The introduction of ZnCl₂ and ErCl₃ modifiers led to a blue shift of the high frequency peak, while the intensity of the boson peak was found to increase continuously with the Er³⁺ content. It is shown that the erbium and zinc compounds both break TeOTe bonds, introducing non-bridging chlorine species, connected mostly to the zinc atoms.     

X-ray photoelectron spectroscopy studies on the bonding properties of oxygenated amorphous carbon nitride thin films synthesized by pulsed laser deposition at different substrate temperatures

Oxygenated amorphous carbon nitride thin films (a-CN_xO_y) were deposited by pulsed laser deposition of camphoric carbon (CC) target at various substrate temperatures (ST). The influence of ST on the bonding properties of a-CN_xO_y films was investigated. The nitrogen to carbon (N/C) atomic ratio and oxygen to carbon (O/C) atomic ratio, bonding state and microstructure of the deposited a-CN_xO_y films were characterized by X-ray photoelectron spectroscopy (XPS) and been confirmed using standard measurement techniques. The bonding states between the C and N, and C and O in the deposited films are found significantly influenced by the ST during deposition process. The N/C and O/C atomic ratio of the a-CN_xO_y films reached the maximum value at 400 °C. The XPS C 1s shows the bonding state of a-CN_xO_y films changes from diamond-like tetrahedral (sp³) carbon and carbon (C–C) bonding to graphite-like trihedral (sp²) CC bonding with the increase of ST. While, the XPS N 1s shows the sp³ C–N bonds increases with higher rates compared with sp² CN bonds up to 400 °C, after which it decreases with higher ST. The C–N bonding of C–N, CN and CN were observed in the deposited a-CN_xO_y films.