Fabrication of gold nano-particle arrays using two-dimensional templates from holographic lithography

We report a simple and cost effective method to fabricate regular metallic particle arrays over large areas with good regularity by using holographic lithography interference for the study of localized surface plasmon. Samples of disk-shaped gold nano-particles arranged in square arrays with lattice spacing ranging from 300 nm to 600 nm were successfully fabricated on glass substrates first by sputtering a thin gold layer onto two-dimensional photoresist templates of hole arrays in square lattice obtained by the holographic method and then removing the photoresist by a lift-off procedure. The plasmonic resonance of the gold nano-particle arrays due to the change of morphology by thermal annealing was studied. The disk-shaped gold nano-particles were found to become more round shaped upon heating and blue shift of the extinction plasmonic band was observed. The results were explained with model calculations using spheroidal particles.     

Improvement of polarization extinction in silicon waveguide devices

The SOI based waveguide devices are found to be highly polarization sensitive. Unwanted polarization excitations can be attenuated by integrating a TE- or TM-pass polarizer. A large attenuation of TM-polarized light has been observed when a thin film of metal is coated on the top of silicon rib waveguide, while TE-polarized light remains almost unaffected. The attenuation of TM-polarized light is attributed to the plasmonic absorption of the evanescent field in the metal cladding. Typically, with an Al cladding of thickness ～ 100 nm and a length of 1 mm on top of a single-mode (λ ～ 1550 nm) SOI rib waveguide structure, TE vs TM extinction ratio of ～ 15 dB has been obtained. Integrating such waveguide polarizers in a directional coupler and MZI based DWDM channel interleaver, we have also achieved an improvement in polarization extinction by ～ 15 dB.     

Fabrication of single-mode Y-branch waveguides in photosensitive polymer with reduced Y-junction residue

Single-mode small-core (～2 μm × 2 μm) Y-branch waveguide structures in photosensitive polymer have been fabricated. Y-branch waveguides are designed by the beam propagation method and Y-branch waveguides are obtained on development after a cross-linkable negative tone epoxy SU-8 2002 polymer is exposed to UV through a photomask. Optical Adhesive NOA 61 is used as under- and over-clad. The fabrication process is optimized to avoid polymer residue at the Y-junction. The average insertion loss obtained for a 7.2 mm 1 × 2 device at chip-level is ～13 dB at 1550 nm.     

Microfiber Mach-Zehnder interferometer embedded in low index polymer

Microfiber Mach Zehnder Interferometer (MMZI) is demonstrated by micromanipulating an optical microfiber drawn from a single mode fiber (SMF) using a flame brushing technique. The MMZI shows good interference fringes with an extinction ratio of 13 dB and a free spectral range (FSR) of 0.52 nm at 1530 nm. The MMZI is then embedded in a polymer with the refractive index of 1.36 to increase the stability and robustnes of the device. It is found that the transmission spectrum of the packaged MMZI is changed by the polymer, which increases the FSR to 0.83 nm. The degradation in transmission loss and extinction ratio are attributed to the disturbance at the coupling area during the packaging. Compared with waveguide based mach zehnder interferometer, the proposed MMZI is favoured due to easy fabrication, compact size, and easy integration with the fiber system.     

Optimization of microcrystalline silicon thin film solar cell isolation processing parameters using ultraviolet laser

This study used ultraviolet laser to perform the microcrystalline silicon thin film solar cell isolation scribing process, and applied the Taguchi method and an L₁₈ orthogonal array to plan the experiment. The isolation scribing materials included ZnO:Al, AZO transparent conductive film with a thickness of 200 nm, microcrystalline silicon thin film at 38% crystallinity and of thickness of 500 nm, and the aluminum back contact layer with a thickness of 300 nm. The main objective was to ensure the success of isolation scribing. After laser scribing isolation, using the minimum scribing line width, the flattest trough bottom, and the minimum processing edge surface bumps as the quality characteristics, this study performed main effect analysis and applied the ANOVA (analysis of variance) theory of the Taguchi method to identify the single quality optimal parameter. It then employed the hierarchical structure of the AHP (analytic hierarchy process) theory to establish the positive contrast matrix. After consistency verification, global weight calculation, and priority sequencing, the optimal multi-attribute parameters were obtained. Finally, the experimental results were verified by a Taguchi confirmation experiment and confidence interval calculation. The minimum scribing line width of AZO (200 nm) was 45.6 μm, the minimum scribing line width of the microcrystalline silicon (at 38% crystallinity) was 50.63 μm and the minimum line width of the aluminum thin film (300 nm) was 30.96 μm. The confirmation experiment results were within the 95% confidence interval, verifying that using ultraviolet laser in the isolation scribing process for microcrystalline silicon thin film solar cell has high reproducibility.     

Influence of UV light irradiation on film thickness distribution of tin oxide films by photochemical vapour deposition

Tin oxide (non-doped) films have been prepared by a photochemical vapour deposition (photo-CVD) from Tetramethyltin (TMT) (Sn(CH₃)₄) and O₂ (containing O₃). A low-pressure mercury lamp was used as the light source. The effect of the UV light irradiation on the film thickness distribution along 5 cm×5 cm area was examined. By piling Teflon films on the surface of the suprasil window, the light intensity of 184.9 nm UV wavelength of the low-pressure mercury lamp was controlled, while that of 253.7 nm wavelength through the Teflon hardly changed. As a result, the uniformity of the film thickness distribution was improved as the light intensity (184.9 nm) increased. The UV 184.9 nm light irradiation may have improved the uniformity of the reactive species distribution in the vapour phase, which may result in the formation of the uniform thickness distribution.     

Tetraalkoxylated-PPV derivative: An efficient and pure green electroluminescent polymer with good solution processability

A new solution-processable tetraalkoxy-substituted poly(1,4-phenylenevinylene) derivative, poly{[2-(3′,7′-dimethyloctyloxy)-3,5,6-trimethoxy]-1,4-phenylenevinylene} (TALK-PPV), was synthesized through a dehydrohalogenation polymerization route, and its light-emitting properties were investigated. The TALK-PPV showed highly blue-shifted UV–visible absorption and PL emission spectra compared to the dialkoxy-substituted PPV derivatives. This is because of the disturbance to the π-conjugation caused by a steric hindered structure. The TALK-PPV thin film exhibited an absorption peak at 446 nm, with an onset at 515 nm. Its PL emission maximum was at 554 nm. Cyclic voltammetric analysis showed the HOMO and LUMO energy levels of the TALK-PPV to be 5.77 and 3.36 eV, respectively. Light-emitting devices were fabricated with an ITO (indium-tin oxide)/PEDOT/polymer/Ca/Al configuration. The TALK-PPV component leads to pure green light emission with a CIE 1931 chromaticity of (0.20, 0.74) at 100 cd/m² brightness, which is very close to the standard green (0.21, 0.71) demanded by the NTSC (National Television System Committee). The maximum brightness of this device was 24,900 cd/m² with an efficiency of 1.45 cd/A.     

Synthesis and characterization of sulfur-containing polyacetylene derivative: Synthesis of poly(phenyl propargyl sulfide) and its electro-optical properties

Sulfur-containing conjugated polymer was synthesized by the polymerization of phenyl propargyl sulfide by transition metal catalysts such as PdCl₂, RuCl₃, (NBD)PdCl₂, WCl₆, and MoCl₅. The polymerization proceeded well in homogeneous manner to give a moderate yield of polymer. The chemical structure of poly(phenyl propargyl sulfide) was characterized by NMR (¹H–, ¹³C–), IR, and UV–visible spectroscopy, and elemental analysis to have the conjugated polymer backbone with the designed moieties. The FT-IR spectra of the polymer did not show the acetylenic CC bond stretching (2119 cm⁻¹) and acetylenic C–H bond stretching (3293 cm⁻¹) frequencies of the monomer. The thin polymer film exhibited reversible electrochemical behaviors between the doping and undoping peaks. Poly(phenyl propargyl sulfide) showed the characteristic UV–visible absorption band at 360 nm and blue PL spectrum at 460 nm, corresponding to the photon energy of 2.70 eV. The energy band gap of poly(PPS) was estimated to be 2.77 eV from the analysis of the absorption edge.     

Emissive pattern formation by the photoreaction of poly(p-phenylene vinylene)

The vinylene unit of a p-phenylene polymer was photo-oxidized under atmospheric oxygen to provide emittive patterns. Thin films of poly[2-methoxy-5-(3,7-dimethyloctyloxy)-p-phenylene vinylene] (MDMO-PPV) were directly photo-patterned by UV light through a photo-mask having 1 μm-wide lines. The absorption and fluorescence studies on the MDMO-PPV film by UV irradiation indicated that the photo-patterning was mainly originated from the oxidation of the vinylic bonds to give carbonyl (CO) containing polymers. The patterned MDMO-PPV film was applied to an electroluminescent cell, which showed 20 μm-wide luminescent line patterns at applied potential of 5 V.     

Photo-induced isomerization of poly 4′-(6-acryloxy) hexyloxy-4-methoxyazobenzene ultra-thin solid film prepared by Langmuir–Blodgett technique

The photo-induced response of an ultra thin polymeric film of poly 4′-(6-acryloxy) hexyloxy-4-methoxyazobenzene (P5) is investigated. A monolayer of P5 at a gas–water interface possesses a mean molecular area of 28.0 Å²/monomer-repeat. Multilayer films of P5 were prepared by horizontal deposition at a surface pressure of 25 mN/m². The uniformity of the transfer process is shown by UV–vis absorption spectra where a linear relationship between the absorption maxima and the number of transferred layer was observed. The average layer thickness of the transferred film determined by XRD measurements is 34.0 Å. This is longer than the length of the azobenzene side group. The transferred film shows a blue shift of the π–π¹ transition from 357 nm for the P5 in solution to 340 nm for the P5 in the film. This suggests the formation of H-aggregate with a head-to-head arrangement of the dipole within the film. The optical property of the transferred film is changed by the irradiation of the film with the UV light at 385 nm. An irreversible change in its molecular packing in the film is seen in the shift of the UV–vis absorption maxima and the change in morphology as observed by AFM. The film morphology changes from being a smooth film into an island-like surface when exposed to the UV irradiation. The layer structure in the film is destroyed. A mass transport is observed during the cis–trans thermal back isomerization process. This suggests that movement of the P5 took place in both the trans–cis isomerization process and the cis–trans back isomerization process. The first movement leads to a molecular expansion while the second, to a molecular contraction.     

Ultrasmall optical logic gates based on silicon periodic dielectric waveguides

An ultrasmall silicon periodic dielectric waveguides-based multimode interference all-optical logic gate has been proposed. The device consists of three 205 nm wide single-mode input waveguides, a 1.1 μm wide and 5.5 μm long multimode interference waveguide, and three 205 nm wide single-mode output waveguides. The total length and width of the device are 13.7 μm and 3.2 μm, respectively. By changing the states of the input optical signals and/or control signals launched into the device, multifunctional logic functions including OR, NAND, NOR, and NOT gates are performed, and each logic function can be realized at a specific output waveguide in accordance with the launched control signals. The ultrasmall multifunctional logic device has potential applications in high density photonic integrated circuits.     

Highly accurate film thickness measurement based on automatic fringe analysis

This paper describes an automated multiple-beam interferometry for measuring a calibrated step height of (27.00 ± 3.00) nm nominally. The fringes captured from the multiple-beam Fizeau–Tolansky interferometer were thinned by using a written program to obtain accurate measurement. We claim that multiple-beam interferometry based on automatic fringe thinning process can provide a real time solution for calibrating step heights precisely and with high accuracy. The uncertainty budget of the multiple-beam interferometry method due to incomplete parallelism of the incident beam and the inhomogeneity of the reflecting layers was calculated automatically with a written ray tracing program. The uncertainty budget in multiple-beam interferometry was estimated to be of the order of 3.00 nm.     

Synthesis of CdS nanostructures using template-assisted ammonia-free chemical bath deposition

CdS micro- and nano-structures (micro/nanotubes and nanostructured films) were obtained by ammonia-free chemical bath deposition using polymer templates (ion track-etched polycarbonate membranes and poly(styrene-hydroxyethyl methacrylate) nanosphere arrays). The semiconductor structures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), optical absorption, photoluminescence and electrical measurements. The diameters of CdS tubes are between 300 nm and few microns and the lengths are up to tens of micrometers. The SEM images prove that the CdS films are nanostructured due to the deposition on the polymer nanosphere arrays. For both CdS structures (tubes and films) the XRD patterns show a hexagonal phase. The optical studies reveal a band gap value of about 2.5?2.6 eV and a red luminescence at ～1.77 eV. A higher increase of conductivity is observed for illuminating the CdS nanostructured film when compared to the simple semiconductor film. This is a consequence of the periodic patterning induced by the polymer nanosphere array.     

Strong violet emission from zinc oxide dumbbell-like microrods and nanowires

ZnO of different morphologies with controlled size and aspect ratio (l/d) such as dumbbell-like microrods, thick nanowires and thin nanowires were prepared by a hydrothermal method. Possible mechanisms for the formation of ZnO crystals with the different morphologies were discussed. Strong violet photoluminescence bands at～413 nm (3.0 eV) without band edge emission were observed from the dumbbell-like ZnO microrods and thick nanowires. Correspondingly, the thin nanowires showed a weak shoulder UV photoluminescence band at～390 nm. Such result indicates that the photoluminescence properties could be improved by the morphologies or aspect ratio (l/d) and the potential fabrication violet-light-emitting devices.     

Arrayed waveguide grating-based demultiplexer with two central wavelengths

In this paper we have presented an arrayed waveguide grating with two central wavelengths, 1550.12 nm and 1310.12 nm. Introducing a novel architecture for outputs of system, if input light to arrayed waveguide grating consists of wavelengths around 1550.12 nm, proposed system will act as 16 channels demultiplexer with channel spacing of 1.6 nm. On the other hand when input wavelengths are distributed around 1310.12 nm, the same arrayed waveguide grating will divide the input to 27 channels with channel spacing of 0.68 nm.     

Low-cost micro-lens arrays fabricated by photosensitive sol–gel and multi-beam laser interference

In this paper, we introduce a low-cost approach for fabricating micro-lens arrays that is based on photosensitive sol–gel and multi-beam laser interference. UV photosensitive ZrO₂ gel films are prepared with Zr(O(CH₂)₃CH₃)₄ and BzAcH as the precursor and chemical modifier, respectively. With UV laser irradiation via different dose, nonlinear photodecomposition occurs in this film. Large scale 2D micro lens arrays with the sizes of 830 nm × 830 nm and 280 nm × 280 nm are fabricated by four-beam laser interference. The surface profile modeling shows that the micro lens is plano convex lens, and the effective focal lengths are 812.0 nm and 317.6 nm, respectively.     

Numerical model of the polymer electro-optic waveguide

A numerical design model is presented for the polymer waveguide in an electro-optic modulator. The effective index method is used to analyze the height of the core waveguide and rib waveguide, an improved Marcatili method is presented to design the rib waveguide width in order to keep the strong single mode operation and have a good match with the standard fiber. Also, the thickness of the upper cladding layer is discussed through calculating the effective index of the multilayer planar waveguide structure has been obtained by setting the optical loss due to the metallic absorption to an acceptable value (<0.1 dB/cm). As a consequence, we take the EO polymer waveguide structure of UV15:CLD/APC:UFC170 as an example, an optimized design is reported.     

Using high haze (> 90%) light-trapping film to enhance the efficiency of a-Si:H solar cells

The high haze light-trapping (LT) film offers enhanced scattering of light and is applied to a-Si:H solar cells. UV glue was spin coated on glass, and then the LT pattern was imprinted. Finally, a UV lamp was used to cure the UV glue on the glass. The LT film effectively increased the Haze ratio of glass and decreased the reflectance of a-Si:H solar cells. Therefore, the photon path length was increased to obtain maximum absorption by the absorber layer. High Haze LT film is able to enhance short circuit current density and efficiency of the device, as partial composite film generates broader scattering light, thereby causing shorter wave length light to be absorbed by the P layer so that the short circuit current density decreases. In case of lab-made a-Si:H thin film solar cells with v-shaped LT films, superior optoelectronic performances have been found (V_oc = 0.74 V, J_sc = 15.62 mA/cm², F.F. = 70%, and η = 8.09%). We observed ~ 35% enhancement of the short-circuit current density and ~ 31% enhancement of the conversion efficiency.     

Self-limited growth of the CaF nanowire on the Si(5 5 12)-2 × 1 template

The atomic structure and interfacial bonding of the ordered-and-isolated CaF nanowires on Si(5 5 12)-2 × 1 have been disclosed by scanning tunneling microscopy and synchrotron photoemission spectroscopy. Initially, CaF molecules dissociated from thermally deposited CaF₂ molecules are adsorbed preferentially on the chain structures of Si(5 5 12)-2 × 1 held at 500 °C. With increasing CaF₂ deposition amount, one-dimensional (1D) CaF nanowires composed of (113) and (111) facets are formed. The line density of these CaF nanowires increases as a function of deposition amount. Finally, at a submonolayer coverage, the surface is saturated with these 1D nanowires except for the (225) subunit, while the original period of Si(5 5 12)-2 × 1, 5.35 nm, is preserved. It has been deduced by the present studies that, owing to these preferential adsorption of CaF and facet-dependent growth of a CaF layer within a unit periodic length of Si(5 5 12)-2 × 1, such a self-limited growth of the CaF nanowire with a high aspect ratio becomes possible.     

A surface-plasmon-polariton wavelength splitter based on a metal–insulator–metal waveguide

A surface-plasmon-polariton (SPP) wavelength splitter based on a metal–insulator–metal waveguide with multiple teeth is proposed. Using the transfer-matrix method, a plasmonic band gap is identified in the multiple-toothed structure, and the splitting wavelength of the SPP splitter can be easily adapted by adjusting the widths of the teeth and the gaps. The proposed wavelength splitter is further verified through finite-difference time-domain (FDTD) simulations, in which SPPs with incident wavelengths of 756 nm and 892 nm are successfully split and guided in opposite directions in the waveguide, with extinction ratios of 30 dB and 29 dB, respectively.