Frustum pyramid shape of indium bump to lengthen cycling life of InSb infrared detector

The thermal deformation appearing in indium antimonide infrared focal plane arrays (InSb IRFPAs) subjected to thermal shock tests, will easily incur the fracture of InSb chip, this phenomenon restricts the final yield of InSb IRFPAs. In light of the proposed equivalent method, the three dimensional structural modeling of InSb IRFPAs is developed, and the simulated strain distributions are consistent with the buckling pattern, the shallow groove and the local flatness, appearing on the top surface of InSb IRFPAs at the corresponding regions. After comparing the deformation profiles at different regions, we deduce that the top surface flatness of InSb IRFPAs will be improved with frustum pyramid indium bump arrays, and this deduction is verified by the subsequent simulation results. That is, when the top surface area of indium bump is smaller than its bottom surface area, in this paper, the diameter of indium bump bottom surface is set with 24 μm, the simulated Z-components of strain is uniformly covering the whole top surface of InSb IRFPAs, and the deformation amplitude is decreased slowly with the decreasing top surface area of indium frustum pyramid arrays. These findings are beneficial to further improve the flatness of InSb IRFPAs, correspondingly, to lengthen its temperature cycling life.     

Modeling and deformation analyzing of InSb focal plane arrays detector under thermal shock

A higher fracture probability appearing in indium antimonide (InSb) infrared focal plane arrays (IRFPAs) subjected to the thermal shock test, restricts its final yield. In light of the proposed equivalent method, where a 32 × 32 array is employed to replace the real 128 × 128 array, a three-dimensional modeling of InSb IRFPAs is developed to explore its deformation rules. To research the damage degree to the mechanical properties of InSb chip from the back surface thinning process, the elastic modulus of InSb chip along the normal direction is lessened. Simulation results show when the out-of-plane elastic modulus of InSb chip is set with 30% of its Young’s modulus, the simulated Z-components of strain distribution agrees well with the top surface deformation features in 128 × 128 InSb IRFPAs fracture photographs, especially with the crack origination sites, the crack distribution and the global square checkerboard buckling pattern. Thus the Z-components of strain are selected to explore the deformation rules in the layered structure of InSb IRFPAs. Analyzing results show the top surface deformation of InSb IRFPAs originates from the thermal mismatch between the silicon readout integrated circuits (ROIC) and the intermediate layer above, made up of the alternating indium bump array and the reticular underfill. After passing through both the intermediate layer and the InSb chip, the deformation amplitude is reduced firstly from 2.23 μm to 0.24 μm, finally to 0.09 μm. Finally, von Mises stress criterion is employed to explain the causes that cracks always appear in the InSb chip.     

考虑底充胶固化过程的InSb面阵探测器结构分析模型

液氮冲击中In Sb面阵探测器的易碎裂特性制约着探测器的成品率,建立适用于面阵探测器全工艺流程的结构模型是分析、优化探测器结构的有效手段.本文提出了用底充胶体积收缩率来描述底充胶在恒温固化中的体积收缩现象,同时忽略固化中底充胶弹性模量的变化来建立底充胶固化模型,给出了底充胶在恒温固化中生成的热应力/应变上限值.借鉴前期提出的等效建模思路,结合底充胶固化后的自然冷却过程和随后的液氮冲击实验,建立了适用于In Sb面阵探测器全工艺流程的结构分析模型.探测器历经底充胶固化、自然冷却至室温后的模拟结果与室温下拍摄的探测器形变分布照片高度符合.随后模拟液氮冲击实验,得到面阵探测器中累积的热应力/应变随温度的演变规律,热应力/应变值极值出现的温度区间与液氮冲击实验结果相符合.这表明所建模型适用于预测不同工艺阶段中面阵探测器的形变分布及演变规律.     

液氮冲击中锑化铟焦平面探测器形变研究

液氮冲击中锑化铟红外焦平面探测器(InSb IRFPAs)的形变研究对理解探测器结构设计可靠性、预测探测器耐冲击寿命具有重要意义.在系统分析液氮冲击结束时模拟得到的InSb IRFPAs形变分布与方向的基础上,提出了降温过程中累积热应变完全弛豫的设想,升至室温后的模拟结果重现了室温下拍摄的InSb IRFPAs典型形变分布特征.经分析认为室温下拍摄的InSb IRFPAs表面屈曲变形源于底充胶固化中引入的残余应力应变,变形幅度随降温过程逐步减弱,至77 K时完全消失,升温过程则依据弹性变形规律复现典型棋盘格屈曲模式.这为后续InSb IRFPAs结构设计、优化及耐冲击寿命预测提供了理论分析基础.     

Study on thermal effects of InSb infrared focal plane arrays irradiated by pulsed laser

To learn thermal effects of InSb infrared focal plane arrays (IRFPAs) detector irradiated by pulsed laser, basing on ANSYS software, and considering temperature dependent thermal parameters of InSb, a three dimensional temperature field analysis model of InSb IRFPAs detector by 1064 nm Gauss laser irradiation is built. The characteristics of temperature rise and temperature distribution in InSb IRFPAs detector are studied. The results show that the maximum temperature always occurs in InSb chip, locating at the top layer of InSb IRFPAs detector, the temperature rises in each layer are different, and the temperature distribution in InSb IRFPAs detector is quite different from that in single-layer material. The temperature distribution of InSb chip in InSb IRFPAs reduces from center to outside, while it shows not a smooth decrease, but a concentric-ringed ripple decrease with non-consecutive high temperature extremum regions. The temperature distribution patterns in underfill, Si readout integrated circuits are similar to that in InSb chip, but the discontinuous high temperature areas in InSb chip, underfill locate at the regions between indium bumps, and the discontinuous high temperature areas in Si readout integrated circuits locate at the contact area with indium bumps. This different temperature distribution phenomenon in each material is mainly due to its multi-layer architecture and quite different thermal properties of the middle layer, which is an interlacing layout of underfill and indium bumps. Besides, the influences of indium bump structure size on the temperature rise are also discussed. All these results qualitatively reflect the disciplines of temperature rise in InSb IRFPAs detector, providing a theory support for thermal analysis of detectors irradiated by laser.     

Reflection absorption infrared spectroscopy analysis of the evolution of ErSb on InSb

We discuss an ex-situ monitoring technique based on glancing-angle infrared-absorption used to determine small amounts of erbium antimonide (ErSb) deposited on an indium antimonide (InSb) layer epitaxially grown on an InSb (100) substrate by low pressure metal organic chemical vapor deposition (MOCVD). Infrared absorption from the indium–hydrogen (InH) stretching mode at 1754.5 cm^? 1 associated with a top most surface of an epitaxial InSb layer was used to compare varying levels of surface coverage with ErSb. Among four samples of varying coverage of ErSb deposition (7.2 to 21.5 monolayers), detected infrared absorption peaks distinct to InH weakened as ErSb surface coverage increased. In the early stage of ErSb deposition, our study suggests that outermost indium atoms in the InSb buffer layer are replaced by Er resulting in increase in absorption associated with the InH mode. Using this simple ex-situ technique, we show that it is possible to calibrate the amount of ErSb deposited atop each individual InSb substrate for depositions of few to tens of monolayers.     

1024 × 1024 Format pixel co-located simultaneously readable dual-band QWIP focal plane

This paper reports the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band quantum well infrared photodetector (QWIP) focal plane array (FPA). The dual-band QWIP device was developed by stacking two multi-quantum-well stacks tuned to absorb two different infrared wavelengths. The full width at half maximum (FWHM) of the mid-wave infrared (MWIR) band extends from 4.4 to 5.1 μm and the FWHM of a long-wave infrared (LWIR) band extends from 7.8 to 8.8 μm. Dual-band QWIP detector arrays were hybridized with custom fabricated direct injection read out integrated circuits (ROICs) using the indium bump hybridization technique. The initial dual-band megapixel QWIP FPAs were cooled to 70 K operating temperature. The preliminary data taken from the first megapixel QWIP FPA has shown system NEΔT of 27 and 40 mK for MWIR and LWIR bands, respectively.     

Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

Photodiodes of InSb were fabricated on an epitaxial layer grown using molecular beam epitaxy (MBE). Thermal cleaning of the InSb (0 0 1) substrate surface, 2° towards the (1 1 1) B plane, was performed to remove the oxide. Photodiode properties of МВЕ-formed epitaxial InSb were demonstrated. Zero-bias resistance area product (R₀A) measurements were taken at 80 K under room temperature background for a pixel size of 100 μm × 100 μm. Values were as high as 4.36 × 10⁴ Ω/cm², and the average value of R₀A was 1.66 × 10⁴ Ω/cm². The peak response was 2.44 (A/W). The epitaxial InSb photodiodes were fabricated using the same process as bulk crystal InSb diodes with the exception of the junction formation method. These values are comparable to the properties of bulk crystal InSb photodiodes.     

InSb grown on Cd0.955Zn0.045Te by liquid phase epitaxy

InSb has been grown by liquid phase epitaxy using indium rich solutions with a supercooling of 2–5 °C onto (1 1 1) oriented Cd_0.955Zn_0.045Te substrates at 400–405 °C. The resulting epitaxial layers were extensively characterized using X-ray diffraction, optical microscopy, Raman spectroscopy and photoluminescence.     

Application of robust color composite fringe in flip-chip solder bump 3-D measurement

This study developed a 3-D measurement system based on flip-chip solder bump, used fringes with different modulation intensities in color channels, in order to produce color composite fringe with robustness, and proposed a multi-channel composite phase unwrapping algorithm, which uses fringe modulation weights of different channels to recombine the phase information for better measurement accuracy and stability. The experimental results showed that the average measurement accuracy is 0.43μm and the standard deviation is 1.38 µm. The results thus proved that the proposed 3-D measurement system is effective in measuring a plane with a height of 50 μm. In the flip-chip solder bump measuring experiment, different fringe modulation configurations were tested to overcome the problem of reflective coefficient between the flip-chip base board and the solder bump. The proposed system has a good measurement results and robust stability in the solder bump measurement, and can be used for the measurement of 3-D information for micron flip-chip solder bump application.     

Effect of amplitude and frequency of ultrasonic irradiation on morphological characteristics control of calcium carbonate

We have previously reported on the morphological control of calcium carbonate by changing synthetic conditions such as temperature, pH and degree of supersaturation in liquid reaction. The present study reports the effect of amplitude and frequency of ultrasonic irradiation on the particle size of calcium carbonate using a horn type ultrasonic apparatus at two different frequencies. The calcium carbonate precipitated by mechanical stirring had a particle size of about 20 μm. By contrast, the particle size of vaterite formed under ultrasonic irradiation was about 2 μm, with a specific surface area of 25–30 m²/g. The major polymorph of calcium carbonate formed by ultrasonic irradiation was vaterite with some calcite present. For 40 kHz ultrasonic irradiation, the specific surface area of the calcium carbonate increased with increasing amplitude. The particle size of vaterite formed at this frequency was about 2 μm, and its distribution was sharper than that obtained at 20 kHz. The mode diameter of the synthesized vaterite was found to decrease with increasing amplitude at 40 kHz.     

Influences of electrode material and design on the reliability of IRFPAs detector under thermal shock

Under thermal shock, high fracture probability in indium antimonide (InSb) infrared focal plane arrays (IRFPAs) limits its applicability. Typical fracture photographs under thermal shock shows that the cracks originating from the area above public electrode are dominant. In order to learn the influences of electrode material parameter and design on the reliability in InSb IRFPAs detector, the proposed improved equivalent modeling method is employed to build three dimensional InSb IRFPAs structure analysis model. Simulated results show that different electrode materials greatly influence the maximal thermal stress appearing in InSb chip and public electrode, and among the electrode material parameters, the coefficient of thermal expansion is the main affecting factor on thermal stress. With the increasing electrode thickness, the maximum thermal stresses in InSb chip and public electrode both decrease, which means the smaller electrode thickness leads to larger thermal stress in InSb chip and electrode. Besides, it is also found that adjusting the electrode layout to avoid the overlap between indium bumps and the embedded part of electrode can effectively reduce the stress concentration in the area of InSb chip above public electrode. All these are beneficial to optimize the structure of InSb IRFPAs and reduce the fracture probability.     

Fabry–Pérot cavities based on chemical etching for high temperature and strain measurement

In this paper, two hybrid multimode/single mode fiber Fabry–Pérot (FP) cavities were compared. The cavities fabricated by chemical etching are presented as high temperature and strain sensors. In order to produce this FP cavity a single mode fiber was spliced to a graded index multimode fiber with 62.5 μm core diameter. The Fabry–Pérot cavities were tested as a high temperature sensor in the range between room temperature and 700 °C and as strain sensors. A reversible shift of the interferometric peaks with temperature allowed to estimate a sensitivity of 0.75 ± 0.03 pm/°C and 0.98 ± 0.04 pm/°C for the sensor A and B respectively. For strain measurement sensor A demonstrated a sensitivity of 1.85 ± 0.07 pm/μ? and sensor B showed a sensitivity of 3.14 ± 0.05 pm/μ?. The sensors demonstrated the feasibility of low cost fiber optic sensors for high temperature and strain.     

Atomic force microscopy enabled roughness analysis of nanostructured poly (diaminonaphthalene) doped poly (vinyl alcohol) conducting polymer thin films

The Atomic Force Microscopy (AFM) helps in evaluating parameters like amplitude or height parameters, functional or statistical parameters and spatial parameters which describe the surface topography or the roughness. In this paper, we have evaluated the roughness parameters for the native poly (vinyl alcohol) (PVA), monomer diaminonaphthalene (DAN) doped PVA, and poly (diaminonaphthalene) (PDAN) doped PVA films prepared in different solvents. In addition, distribution of heights, skewness and Kurtosis moments which describe surface asymmetry and flatness properties of a film were also determined. At the same time line profiles, 3D and 2D images of the surface structures at different scanning areas i.e. 5 × 5 μm² and 10 × 10 μm² were also investigated. From the roughness analysis and the surface skewness and coefficient of Kurtosis parameters, it was concluded that for PVA film the surface contains more peaks than valleys and the PDAN doped PVA film has more valleys than peaks. It was also found that the PDAN doped PVA film with acetonitrile solvent was used for substrate in electronics applications because the film gives less fractal morphology. Thus, the AFM analysis with different parameters suggested that the PDAN doped PVA films are smooth at the sub-nanometer scale.     

Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO

To improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs), periodic semisphere patterns with 3.5 μm width, 1.2 μm height, and 0.8 μm spacing were formed on sapphire substrate by dry etching using BCl₃/Cl₂ gas chemistry. The indium tin oxide (ITO) transparent conductive layer was patterned by wet etching to reduce the total internal reflection existing along between p-GaN, ITO, and air. At 350 mA injection current, the high power LED by integrating patterned sapphire substrate with patterned ITO technology exhibited a 36.9% higher light output power than the conventional LEDs.     

I–V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy

We report the measurement of the electrical resistivity of a vertical single Ni nanowire. A vertical array of Ni nanowires was fabricated on a Si substrate by electrodeposition using a nanoporous alumina template. The Ni nanowires possessed a face-centered-cubic polycrystalline structure. A voltage-applied atomic force microscope was used to make a nanometer-scale point contact on top of the vertical grown single Ni nanowire. The measured resistance was 1.1 MΩ for a nanowire with length of 3 μm and diameter of 20 nm.     

Complementary barrier infrared detector (CBIRD) with double tunnel junction contact and quantum dot barrier infrared detector (QD-BIRD)

The InAs/GaSb type-II superlattice based complementary barrier infrared detector (CBIRD) has already demonstrated very good performance in long-wavelength infrared (LWIR) detection. In this work, we describe results on a modified CBIRD device that incorporates a double tunnel junction contact designed for robust device and focal plane array processing. The new device also exhibited reduced turn-on voltage. We also report results on the quantum dot barrier infrared detector (QD-BIRD). By incorporating self-assembled InSb quantum dots into the InAsSb absorber of the standard nBn detector structure, the QD-BIRD extend the detector cutoff wavelength from ∼4.2 μm to 6 μm, allowing the coverage of the mid-wavelength infrared (MWIR) transmission window. The device has been observed to show infrared response at 225 K.     

In-situ strain localization analysis in low density transformation-twinning induced plasticity steel using digital image correlation

The effect of deformation temperature on the strain localization has been evaluated by an adapted digital image correlation (DIC) technique during tensile deformation. The progress of strain localization was traced by the corresponding strain maps. The electron backscatter diffraction analysis and tint etching technique were utilized to determine the impact of martensitic transformation and deformation twinning on the strain localization in both elastic and plastic regimes. In elastic regime the narrow strain bands which are aligned perpendicular to the tension direction were observed in temperature range of 25 to 180 °C due to the stress-assisted epsilon martensite. The strain bands were disappeared by increasing the temperature to 300 °C and reappeared at 400 °C due to the stress-assisted deformation twinning. In plastic regime strain localization continued at 25 °C and 180 °C due to the strain-induced alfa-martensite and deformation twinning, respectively. The intensity of plastic strain localization was increased by increasing the strain due to the enhancement of martensite and twin volume fraction. The plastic strain showed more homogeneity at 300 °C due to the lack of both strain-induced martensite and deformation twinning.     

Strain-dependent electronic and magnetic of Co-doped monolayer of WSe2

We perform first-principles calculation to investigate electronic and magnetic properties of Co-doped WSe₂ monolayer with strains from −10% to 10%. We find that Co can induce magnetic moment about 0.894 μ_B, the Co-doped WSe₂ monolayer is a magnetic semiconductor material without strain. The doped system shows half-metallic properties under tensile strain, and the largest half-metal gap is 0.147 eV at 8% strain. The magnetic moment (0.894 μ_B) increases slightly from 0% to 6%, and jumps into about 3 μ_B at 8% and 10%, which presents high-spin state configurations. When we applied compressive strain, the doped system shows a half-metallic feature at −2% strain, and the magnetic moment jumps into 1.623 μ_B at −4% strain, almost two times as the original moment 0.894 μ_B at 0% strain. The magnetic moment vanishes at −7% strain. The Co-doped WSe₂ can endure strain from −6% to 10%. Strain changes the redistribution of charges and magnetic moment. Our calculation results show that the Co-doped WSe₂ monolayer can transform from magnetic semiconductor to half-metallic material under strain.     

Local delamination of InSb IRFPAs in liquid nitrogen shock tests

Both the local delamination and the local fracture, appearing in the InSb infrared focal plane arrays (IRFPAs) detectors in liquid nitrogen shock tests, restrict the final yield of the InSb IRFPAs detectors. To explore the mechanism of the local delamination appearing in the region of the negative electrode of the InSb IRFPAs detectors, basing on the created structural modeling of the InSb IRFPAs detectors, we obtain the distributions of the interfacial stresses in the different interfaces of the InSb IRFPAs detectors. After comparing the distributions of the simulated interfacial stresses with the measured local delamination region in the InSb IRFPAs detectors, we think that the local delamination originates from the interfacial shear stresses, and the crack extension is the typical sliding mode. Besides, the weakened gluing strength between the InSb chip and the underfill in the negative electrode region also causes this region to be prone to the local delamination. All these findings provide the theoretical references for both the structure design and the structure optimization of the InSb IRFPAs detectors assembly in the future.