射流速度和冲击角度对材料去除特性的分析

射流速度和冲击角度会影响冲击射流的动力特性,对射流抛光的材料去除面型和材料去除量有重要的影响。对冲击射流壁面流场结构进行了分析,建立了工件壁面上的速度、压力与冲击角度、射流出口速度的数学关系。在分析理想平面的基础上,重点分析了射流速度和冲击角度的变化对存在表面瑕疵的工件材料去除量的影响。结果表明:对于理想平面,当冲击角度大约为30°时,可得到理想的高斯型面型分布;对于存在瑕疵的工件表面,在小角度冲击时更有利于材料的去除;工件材料的去除量均随着射流速度的增大而增大。     

双轴式研磨抛光中抛光盘相对位置对去除量的影响研究

为了了解在抛光过程中抛光盘位置对光学元件面形的影响,对一种双轴式平面研磨抛光运动过程进行了分析。从Preston方程出发,推导了去除函数的表达式,研究了抛光盘的摆幅及偏心距离对元件的去除量分布的影响。通过定量计算得知,在加工转速不变的情况下,增大抛光盘的摆幅,元件不同圆周上的去除量也不同。增大偏心距,元件的去除量增大,不论抛光盘相对元件的位置如何改变,回转中心的去除量总是最大。     

超光滑加工技术中光学元件表面材料的均匀去除

超光滑加工通常是在保证光学元件面型精度不劣化前提下提升其中高频精度.均匀去除是保证超光滑加工过程中光学元件面型精度不劣化的重要途径.本文以四轴三联动小磨头超光滑加工机床为基础,结合Preston假设,研究了四轴三联动超光滑加工机床对光学元件的材料去除特性,发现当机床取某些特定的参量时,通过等值的驻留时间规划即可实现光学元件表面材料的均匀去除.最后,对这些特定的参量进行了对比实验.实验结果验证了理论分析的正确性.     

超光滑加工技术中光学元件表面材料的均匀去除

超光滑加工通常是在保证光学元件面型精度不劣化前提下提升其中高频精度.均匀去除是保证超光滑加工过程中光学元件面型精度不劣化的重要途径.本文以四轴三联动小磨头超光滑加工机床为基础,结合Preston假设,研究了四轴三联动超光滑加工机床对光学元件的材料去除特性,发现当机床取某些特定的参量时,通过等值的驻留时间规划即可实现光学元件表面材料的均匀去除.最后,对这些特定的参量进行了对比实验.实验结果验证了理论分析的正确性.     

冲击角度对射流抛光中材料去除面形的影响分析

冲击角度会影响冲击射流的动力特性,对射流抛光的材料去除面形和去除量大小有重要的影响。利用计算流体动力学理论进行了冲击角度对射流抛光中材料磨蚀的影响的仿真和实验研究,分析了冲击角度对冲击射流特性的影响,结合实验研究,基于射流厚度、壁面速度和压力等几个方面分析了冲击角度对材料去除面形的影响,得到了材料去除分布与冲击角度的去除模型的关系描述公式,其材料去除面形分布与实际抛光面形能很好的符合。     

电容器边缘效应对介电常数测量的影响及修正

通过场的图形描绘法和实际测量,考虑平行板电容器边缘效应对电容测量值的影响并进行修正,从而获得对用交流电桥法测量纺织品等介质的介电常数的测量结果的修正。     

抛光颗粒尺度均匀性对射流去除特性的影响

基于单喷嘴射流抛光去除机理,研究了抛光颗粒尺度分布理想均匀时,颗粒直径和抛光液质量分数变化对冲击去除分布的影响。在此基础上,考虑到实际加工过程中,抛光粉颗粒不可避免地存在分布不均匀的情况,在非理想不均匀条件下,提出了一种分析颗粒尺度的材料去除特性模型,重点研究了不同颗粒尺度分布范围对材料去除特性的影响。结果表明：在理想状态下,冲击去除随着抛光颗粒直径的增大而减小,随着抛光液质量分数的增大而增大。当颗粒直径随机分布时,材料去除量将出现明显的波动,抛光液质量分数的增大使去除量波动也增加,去除量波动的大小与抛光粉颗粒的平均直径直接相关,且与理想均匀状态下的去除特性相比,颗粒分布不均匀性使得材料的去除量有所增大。     

材料表面对超冷原子的量子反射

一只钢球抛向坚硬的表面，在二者接触之后，钢球将被表面反射，这一图像是人们的经典直觉．然而，如果将钢球换成原子，表面反射过程将有许多新特点．例如，原子可能在尚未接触到表面之前就“掉头”折返，这一现象被称为量子反射．与量子隧穿一样，量子反射也是源于粒子的波粒二象性．     

基于增强条纹去除的超冷原子成像

吸收成像是超冷原子实验中定量测量的基础.典型的成像过程涉及记录探测光场和原子吸收光场的照片.在拍摄这两张照片的时间间隔内,由于探测光不可避免的抖动,会在成像过程中引入条纹噪声模式.常规的条纹去除算法虽然可以抑制这种噪声,但由于其忽略了原子吸收效应对噪声信号的调制,使得原子团上会出现无法完全消除的剩余条纹,并且这一现象会随着原子密度的增大而愈发明显.本文提出了一种创新的增强条纹去除算法,该方法考虑了原子的吸收效应,并通过主动调制噪声信号的强度,从根本上避免了剩余条纹的产生并显著提高了成像的信噪比.在处理均匀费米气体的吸收成像时,新算法成功将表征原子密度波动的相对标准偏差降低约37%.此外,本文还利用该方法对⁶Li费米原子超流中的第二声波进行了定量观测.与传统的条纹去除算法相比,我们的新方法将密度波关联函数的对比度提高了近4倍,密度响应谱强度提升约15%.上述结果表明,增强条纹去除算法不仅可以有效地抑制条纹噪声,而且更有利于在高密度原子体系中识别和探测一些重要物理效应.     

浴法抛光中抛光粉粒径对去除效果影响的试验研究

为了分析抛光粉粒径对材料去除效果的影响,选用不同的平均粒径以及不同比例混合氧化铈抛光粉分别对K9玻璃进行了抛光试验。对抛光后的工件表面粗糙度及去除量进行了定量研究。结果表明,在试验条件相同的情况下,不同平均粒径的抛光粉,粒径越小,抛光后的元件表面粗糙度越好。从使用不同比例的混合抛光粉试验中可以看出,粒度的均匀性是影响工件表面粗糙度的重要因素。结合抛光粉粒度分布图和试验结果可以看出,抛光粉粒子的分布范围越小,以及各粒径大小分布在峰值附近的粒子所占体积百分比越接近,加工后的工件表面粗糙度越小。     

Modeling effects of abrasive particle size and concentration on material removal at molecular scale in chemical mechanical polishing

A novel material removal model as a function of abrasive particle size and concentration was established in chemical mechanical polishing (CMP) based on molecular scale mechanism, micro-contact mechanics and probability statistics. A close-form equation was firstly developed to calculate the number of effective particles. It found nonlinear dependences of removal rate on the particle size and concentration, being qualitatively agreement with the published experimental data. The nonlinear relation results from the couple relationship among abrasive number, slurry concentration and surface atoms’ binding energy with the particle size. Finally, the system parameters such as the operational conditions and materials properties were incorporated into the model as well.     

Modeling the effects of oxidizer, complexing agent and inhibitor on material removal for copper chemical mechanical polishing

The paper presents a novel mathematical model that systematically describes the role of oxidizer, complexing agent and inhibitor on the material removal in chemical mechanical polishing (CMP) of copper. The physical basis of the model is the steady-state oxidation reaction and etched removal in additional to mechanical removal. It is shown that the complexing agent concentration-removal relation follows a trend similar to that observed from the effects of oxidizer on Cu removal in CMP. In addition, the removal rate and the coupled effects of the chemical additives are determined from a close-form equation, making use of the concepts of chemical-mechanical equilibrium and chemical kinetics. The model prediction trends show qualitatively good agreement with the published experimental data. The governing equation of copper removal reveals some insights into the polishing process in addition to its underlying theoretical foundation.     

Investigation of material removal mechanism of silicon wafer in the chemical mechanical polishing process using molecular dynamics simulation method

Chemical mechanical polishing (CMP) technology, being the mainstream technique of acquiring global planarization and nanometer level surface, has already become an attractive research item. In the case of CMP process, the indentation depth lies in the range of nanometer or sub-nanometer, huge hydrostatic pressure induced in the local deformation area which makes the material removal and surface generation process different from traditional manufacturing process. In order to investigate the physical essence of CMP technique, the authors carry out molecular dynamics (MD) analysis of chemical mechanical polishing of a silicon wafer. The simulation result shows that huge hydrostatic pressure is induced in the local area and leads to the silicon atom transform from the classical diamond structure (α silicon) to metal structure (β silicon). This important factor results in the ductile fracture of silicon and then in the acquisition of a super-smooth surface.     

Modeling the effects of cohesive energy for single particle on the material removal in chemical mechanical polishing at atomic scale

This paper proposes a novel mathematical model for chemical mechanical polishing (CMP) based on interface solid physical and chemical theory in addition to energy equilibrium knowledge. And the effects of oxidation concentration and particle size on the material removal in CMP are investigated. It is shown that the mechanical energy and removal cohesive energy couple with the particle size, and being a cause of the non-linear size-removal rate relation. Furthermore, it also shows a nonlinear dependence of removal rate on removal cohesive energy. The model predictions are in good qualitative agreement with the published experimental data. The current study provides an important starting point for delineating the micro-removal mechanism in the CMP process at atomic scale.     

Dependence of noise induced effects on state preparation in multiqubit systems

The perturbation of multiqubit systems by an external noise can induce various effects like decoherence, stochastic resonance and anti-resonance, and noise-shielding. We investigate how the appearance of these effects on disentanglement time depends on the initial preparation of the systems. We present results for 2-, 3- and 4-qubit chains in various arrangements and observe a clear dependence on the combination of initial geometry of the state space and the placement of noise. Finally, we see that temperature can play a constructive role for the control of these noise induced effects.     

Numerical simulations and experimental investigations on transverse effects of two-wave mixing in a photovoltaic photorefractive crystal

The transverse effects of two Gauss waves mixing in a photovoltaic photorefractive crystal,i.e.,the dynamical evolutions of signal beam with different parameters,are traced numerically and experimentally.Both the one-dimensional numerical simulations and two-dimensional experimental investigations show that the self-focusing effect of signal beam becomes more obvious as the intensity of pump beam and the angle between the signal and pump beams increase.In accordance with these results,the state of two Gauss...     

Central cell effects on the polarizabilities of shallow donors in silicon

With the Topp and Hopfield form for the ionic pseudopotentials, the screened impurity pseudopotentials of the shallow donors P, As and Sb in silicon are obtained in closed form in the linearized Thomas-Fermi model. The results are compared with the screening using a k-dependent dielectric function. Using these impurity pseudopotentials in the multivalley effective mass equation, the binding energies of these donors in Si are estimated variationally. Adopting the Hasse variational method, the polarizabilities of the P, As and Sb donors in Si are computed and are found to be in excellent agreement with the polarizability values of isolated P and Sb in Si, deduced from recent piezocapacitance measurements.     

The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH4/NH3/N2 plasmas: Two-dimensional simulations

A two-dimensional (2D) fluid model is presented to study the behavior of silicon plasma mixed with SiH4 , N2 , and NH3 in a radio-frequency capacitively coupled plasma (CCP) reactor. The plasma-wall interaction (including the deposition) is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N2 /NH3 ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing the electron density significantly.