Kinetics of the decomposition of disilane molecules on a silicon growth surface in vacuum chemical epitaxy

In the framework of the kinetic approach based on data of technological experiments, the range of characteristic rates of decomposition of disilane radical molecules adsorbed on the surface during the growth of a silicon layer is determined. The relationship between the rate of incorporation of silicon atoms into a growing crystal and the characteristic rate of pyrolysis of hydride molecules on the growing surface is established. The temperature dependences of the decomposition rate of disilane molecules exhibit an unusual activationless behavior in the growth temperature range. The form of the observed dependences is determined by the pyrolysis model, conditions of transferred of hydrogen from an adsorbed molecule onto the surface of the growing layer, being a function of the gas pressure and temperature in the reactor. It is demonstrated that the basic features of the behavior of the decomposition rate of disilane molecules are controlled by the specifics of the interaction of the silicon dihydride molecular beam with the growth surface under conditions of low and high degrees of bonding of hydrogen to free surface bonds. The temperature dependences are qualitatively described by a relation composed of two activation curves with different activation energies at low and high temperatures and preexponential factors depending on the surface coverage by hydrogen atoms.     

Reconstruction of $$ \tilde \tau _1 $$ mass at the LHC

The cascade mass reconstruction approach was used for mass reconstruction of the lightest $ \tilde \tau $ \tilde \tau produced at the LHC in the cascade decay $ \tilde g \to \tilde bb \to \tilde \chi _2^0 bb \to \tilde \tau _1 \tau bb \to \tilde \chi _1^0 \tau \tau bb $ \tilde g \to \tilde bb \to \tilde \chi _2^0 bb \to \tilde \tau _1 \tau bb \to \tilde \chi _1^0 \tau \tau bb . The $ \tilde \tau _1 $ \tilde \tau _1 mass was reconstructed assuming that masses of gluino, bottom squark, and two lightest neutralinos were reconstructed in advance. SUSY data sample sets for the SU(3) model point containing 160k events each were generated which corresponded to an integrated luminosity of about 8 fb⁻¹ at 14 TeV. These events were passed through the AcerDET detector simulator, which parametrized the response of a generic LHC detector. The mass of the $ \tilde \tau _1 $ \tilde \tau _1 was reconstructed with a precision of about 20% on average.     

Kinetics of disilane molecule decomposition on the growth surface of silicon in vacuum gas-phase epitaxy reactors

The range of the characteristic decomposition rates of dihydride molecule radicals adsorbed by the silicon surface in the temperature interval 450?C700°C is experimentally found for a number of kinetic models. A relationship between the rate of silicon atom incorporation into a growing crystal and the characteristic rate of disilane molecule pyrolysis on the silicon surface is found. The temperature dependence of the rate of disilane fragment decomposition on the silicon surface is nonmonotonic, and its run depends on temperature conditions. It is shown that the temperature dependence of the molecular decomposition rate on the growth surface is described by a superposition of two activation curves with various activation energies. The activation energies depend on the peculiarity of interaction between the molecular beam and the silicon surface when the filling of surface states with hydrogen is low and high.     

Adsorption of silane and methylsilane on gold surfaces

The adsorption of silane and methylsilane on the (1 1 0) and polycrystalline surfaces of gold is examined using vibrational electron energy loss spectroscopy (VEELS), angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and X-ray photoelectron spectroscopy (XPS). Adsorption of silane onto the Au(1 1 0) surface at low temperatures is dissociative and yields an SiH₂ and possibly also SiH₃ surface species. Further dissociation occurs at room temperature to yield adsorbed SiH, which is tilted on the surface, with complete dissociation to Si occurring by 110 °C. The similarity in the UP spectra for silane adsorbed on the polycrystalline sample suggests that the same surface species are present over that temperature range. Above 200 °C, spectral changes suggest rearrangement of the Si atoms, which, by 350 °C, have diffused into the bulk. Adsorption of methylsilane onto the (1 1 0) surface at low temperatures initially produces adsorbed CH₃SiH or CH₃SiH₂, with undissociated methylsilane physisorbing at higher exposures. By room temperature, desorption and decomposition leaves (or direct adsorption yields) only adsorbed CH₃Si. After further heating, the hydrogen-carbon bonds of the CH₃ group break to leave an adsorbed SiC species. On the polycrystalline surface, methylsilane adsorption is the same at low temperatures as on (1 1 0). In contrast to the latter, though, the UP spectra indicate that direct exposures at room temperature yield adsorbed Si or SiC initially, with CH₃Si again adsorbing at higher exposures. Upon further heating to 330 °C, little if any methyl-groups remain on the surface and the Si has started to diffuse into the bulk.     

ESR in the Earth’s magnetic field as a cause of dislocation motion in NaCl crystals

The resonance displacements of the dislocations, l ∼ 100 μm, in NaCl crystals placed in the crossed Earth’s magnetic field B _Earth and the ac field $ \tilde B $ \tilde B ≈ 3 μT of the variable frequency ν ∼ 10⁶ Hz have been discovered in the absence of any other impact on the crystals. Two peaks of the mean dislocation path l(ν) with the maxima at ν₁ = 1.3 MHz and ν₂ = 3 MHz have been observed for the field $ \tilde B $ \tilde B oriented along the vertical and horizontal components of B _Earth, respectively. The effect is explained by the depinning of the dislocations from the impurity centers after their structural transformation due to the ESR in the dislocation-impurity system in the crossed fields. The subsequent motion of the dislocations proceeds under the action of internal stress in the crystals. A physical model has been proposed to explain the strong anisotropy of the effect with respect to the mutual orientation of the dislocation lines and magnetic fields.     

Formation of strontium atomic chains on the singular and stepped Si(111) surfaces

The surface structures 3 × 2, 5 × 2, 7 × 2, and 9 × 2 formed on the Si(111) plane during adsorption of submonolayer strontium have been investigated using scanning tunneling microscopy. The experimental data obtained are in agreement with the models of surface reconstructions proposed earlier for the structures induced by the adsorption of divalent metal atoms. An important constituent of these structures is provided by strontium atomic chains in the 〈1$ \bar 1 $ \bar 1 0〉 direction. Three types of domains of surface structures are formed on the Si(111) plane, which correspond to the rotational symmetry C ₃ of the surface under consideration. The reduction of the symmetry of the substrate to C ₁ with the use of the stepped Si(7 7 10) surface makes it possible to form strontium atomic chains, which are oriented with respect to the substrate in a similar manner.     

Beam-induced radiation in the compact muon solenoid tracker at the Large Hadron Collider

The intense radiation environment at the Large Hadron Collider, CERN at a design energy of $ \sqrt s $ \sqrt s = 14 TeV and a luminosity of 10³⁴ cm⁻² s⁻¹ poses unprecedented challenges for safe operation and performance quality of the silicon tracker detectors in the CMS and ATLAS experiments. The silicon trackers are crucial for the physics at the LHC experiments, and the inner layers, being situated only a few centimeters from the interaction point, are most vulnerable to beam-induced radiation. We have recently carried out extensive Monte Carlo simulation studies using MARS program to estimate particle fluxes and radiation dose in the CMS silicon pixel and strip trackers from proton-proton collisions at $ \sqrt s $ \sqrt s = 14 TeV and from machine-induced background such as beam-gas interactions and beam halo. We will present results on radiation dose, particle fluxes and spectra from these studies and discuss implications for radiation damage and performance of the CMS silicon tracker detectors.     

Fine and hyperfine structure of the muonic <Superscript>3</Superscript>He ion

On the basis of quasipotential approach to the bound state problem in QED we calculate the vacuum polarization, relativistic, recoil, structure corrections of orders α ⁵ and α ⁶ to the fine structure interval ΔE ^fs = E(2P _3/2) − E(2P _1/2) and to the hyperfine structure of the energy levels 2P _1/2 and 2P _3/2 in muonic ₂³He ion. The resulting values ΔE ^fs = 144 803.15 μeV, Δ$ \tilde E $ \tilde E ^hfs(2P _1/2) = −58 712.90 μeV, Δ$ \tilde E $ \tilde E ^hfs(2P _3/2) = −24 290.69 μeV provide reliable guidelines in performing a comparison with the relevant experimental data.     

“Magic numbers” in the melting of a cluster of point charges on a sphere

The thermodynamic properties of a cluster of point Coulomb charges on a sphere have been analyzed using the Monte Carlo method for the number of charges 20 ≤ N ≤ 90. The ground state of the system of charges is described in the model of a closed quasi-two-dimensional triangular lattice with topological defects. We have determined the dependence of the Lindeman parameter δ_L of this system on N and on the dimensionless parameter $ \tilde T $ \tilde T , which is proportional to the temperature T and to the radius R of the cluster: $ \tilde T = {{k_B T\varepsilon R} \mathord{\left/ {\vphantom {{k_B T\varepsilon R} {e^2 }}} \right. \kern-\nulldelimiterspace} {e^2 }} $ \tilde T = {{k_B T\varepsilon R} \mathord{\left/ {\vphantom {{k_B T\varepsilon R} {e^2 }}} \right. \kern-\nulldelimiterspace} {e^2 }} , where ∈ is the dielectric constant of the medium and e is the charge of a particle. The “magic numbers,” i.e., the N values, for which the melting point of the closed triangular lattice of charges is much higher than those for neighboring N values, have been found. The evolution of the lattice-melting mechanisms with an increase in the number of charges N in a mesoscopic cluster has been analyzed. For N ≤ 32, the melting of the lattice does not involve dislocations (nontopological melting); this behavior of the mesoscopic system of charges on the sphere differs from the behavior of the extended planar two-dimensional system. At N ≳ 50, melting is accompanied by the formation of dislocations. The mechanism of dislocation-free non-topological melting of a closed lattice, which occurs at small N values and is associated with the cooperative rotational motion of “rings” of particles, has been analyzed. The model has various implementations in the mesoscopic region; in particular, it describes the system of electrons over the liquid-helium cluster, the liquid-helium cluster with incorporated charged particles, a multielectron bubble in liquid helium, a charged quantum dot, etc.     

The layer disorders defect in coir fiber under thermal and chemical treatment

Natural coir fibers, subjectd to thermal treatments in the range of 0°C to 200°C and alkali treatment with 5% to 30% concentration w/w, have been used in the present investigation to determine the interlayer variability of the cellulose planes (020), (110) and (1$ \bar 1 $ \bar 1 0). Among the equatorial reflections (110), (1$ \bar 1 $ \bar 1 0) and (020), the extent of variability is found to be more with the proportion of such affected planes less for (020) reflection in the native cellulose at lower temperature while at higher temperature (110) and (1$ \bar 1 $ \bar 1 0) become more affected by variability defect. (110) and (1$ \bar 1 $ \bar 1 0) planes are more affected also with alkali treatment.     

Symmetry analysis of ordered phases of the lower tungsten carbide W2C

The channels of disorder-order phase transitions through which there can arise orthorhombic (space group Pbcn) β′-W₂C, rhombohedral (space group P $ \bar 3 $ \bar 3 m1)β″-W₂C, and trigonal (space group P $ \bar 3 $ \bar 3 1m)ɛ-W₂C superstructures of the disordered lower hexagonal carbide β-W₂C have been determined. The distribution functions of carbon atoms in the superstructures under consideration have been calculated, and the physically admissible sequence of transformations associated with the ordering of the lower carbide β-W₂C that occur with a decrease in the temperature has been established.     

Properties of neutral charmed mesons in <Emphasis Type="Italic">pA</Emphasis> interactions at 70 GeV

The results of data handling for the E-184 experiment involving the irradiation of the active target, consisting of carbon, silicon, and lead plates by a 70-GeV proton beam are presented. When the two-prong neutral charmed meson decay signal was selected and the cross section for charm production at a near-threshold energy was estimated (σ(c $ \bar c $ \bar c ) = 7.1 ± 2.4(stat.) ± 1.4(syst.) μb/nucleon), some properties of D ⁰ and $ \bar D^0 $ \bar D^0 were investigated. These include the atomic-weight dependence of the cross section on the target mass number (its A dependence); the differential cross sections dσ/dp _t ² and dσ/dx _F; and the dependence of the parameter α on x _F, p _t ², and p _lab. The experimental results are compared with the predictions of the FRITIOF7.02 program.     

A model of the multiple adsorption of hydrogen atoms on the surface of carbon nanotubes

A model of the multiple adsorption of atomic hydrogen on the surface of single-walled carbon nanotubes of the zigzag and arm-chair types was constructed. The adsorption model is based on the Anderson periodic model. An analytic equation for the band structure of carbon nanotubes with adsorbed hydrogen atoms was obtained, and the special features of this structure were studied. The dependence of the band structure of carbon nanotubes on the concentration of adsorbed hydrogen atoms was analyzed. The model constructed can be used to study adsorption of other univalent atoms on the surface of carbon particles.     

A study of Ga layers on Si(1 0 0)-(2 × 1) by SR-PES: Influence of adsorbed water

Results for deposition and thermal annealing of gallium on the Si(1 0 0)-(2 × 1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 °C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2 × 2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments.     

On the theory of conductivity of anisotropic composites: A weakly inhomogeneous medium

The conductivity of a weakly inhomogeneous anisotropic medium is considered. The effective conductivity tensor $ \hat \sigma _e $ \hat \sigma _e is determined in the approximation quadratic in deviation of local conductivity $ \hat \sigma $ \hat \sigma (r) from mean value 〈$ \hat \sigma $ \hat \sigma 〉 for an arbitrary anisotropy of the composite.     

Effect of the orientation of strain axes on the creep in Ni<Subscript>3</Subscript>Ge alloy single crystals

The creep in Ni₃Ge alloy single crystals with strain axis orientations of [001], [$ \bar 1 $ \bar 1 39], [$ \bar 2 $ \bar 2 34], and [$ \bar 1 $ \bar 1 22] was investigated. It was found that changes in strain axis orientation that lead to cubic slip increase the creep resistance of Ni₃Ge alloy single crystals.     

Spontaneous breakdown of $$ \mathcal{P}\mathcal{T} $$ symmetry in the complex Coulomb potential

The $ \mathcal{P}\mathcal{T} $ \mathcal{P}\mathcal{T} symmetry of the Coulomb potential and its solutions are studied along trajectories satisfying the $ \mathcal{P}\mathcal{T} $ \mathcal{P}\mathcal{T} symmetry requirement. It is shown that with appropriate normalization constant the general solutions can be chosen $ \mathcal{P}\mathcal{T} $ \mathcal{P}\mathcal{T} -symmetric if the L parameter that corresponds to angular momentum in the Hermitian case is real. $ \mathcal{P}\mathcal{T} $ \mathcal{P}\mathcal{T} symmetry is spontaneously broken, however, for complex L values of the form L = −1/2 + iλ. In this case the potential remains $ \mathcal{P}\mathcal{T} $ \mathcal{P}\mathcal{T} -symmetric, while the two independent solutions are transformed to each other by the $ \mathcal{P}\mathcal{T} $ \mathcal{P}\mathcal{T} operation and at the same time, the two series of discrete energy eigenvalues turn into each other’s complex conjugate.     

Hydrogen outgassing mechanism in titanium materials

This paper addresses a hydrogen outgassing mechanism in titanium materials with extremely low outgassing property by investigating the distribution of hydrogen atoms concentration in depth below the surface, and the activation energy for desorption of dissolved hydrogen atoms into the boundary region between the surface oxide layer and the bulk titanium and that of adsorbed hydrogen atoms on the surface. The distribution of hydrogen atoms concentration in depth below the surface was analyzed by a time-of-flight secondary ion mass spectrometry (TOF-SIMS). The activation energy for desorption of dissolved hydrogen atoms was estimated by the thermal desorption spectroscopy (TDS) measurement with various heating rates. The activation energy for desorption of adsorbed hydrogen atoms was estimated by the temperature dependence of the outgassing rate in titanium material. In the titanium material, hydrogen atoms show maximum concentration at the boundary between the surface oxide layer and the bulk titanium. Concentration of hydrogen atoms decreases rapidly at the surface oxide layer, while it decreases slowly in the deep region below the surface layer-bulk boundary by the vacuum evacuation without/with the baking process. The activation energy for desorption of 1.02 eV of dissolved hydrogen atoms into the surface layer-bulk boundary is about three times as large as that of 0.38 eV of the adsorbed hydrogen atoms on the surface. These results suggest that the hydrogen outgassing mechanism in the titanium material is composed the follows processes, i.e. the slow hydrogen atoms diffusion at the surface layer-bulk boundary, quick hydrogen atoms diffusion at the surface oxide layer and rapid desorption of adsorbed hydrogen atoms on the surface. This outgassing mechanism gives very low hydrogen concentration near the surface, which results in the extremely low outgassing rate in titanium materials.     

Dielectron widths of the <Emphasis Type="Italic">S</Emphasis>-, <Emphasis Type="Italic">D</Emphasis>-vector bottomonium states

The dielectron widths of Y(nS)(n = 1, …, 7) and vector decay constants are calculated using the relativistic string Hamiltonian with a universal interaction. For Y(nS) (n = 1, 2, 3) the dielectron widths and their ratios are obtained in full agreement with the latest CLEO data. For Y(10580) and Y(11020) a good agreement with experiment is reached only if the 4S-3D mixing (with a mixing angle θ = 27°± 4°) and 6S-5D mixing (with θ = 40°±5°) are taken into account. The possibility to observe higher “mixed D-wave” resonances, $ \tilde \Upsilon $ \tilde \Upsilon (n ³ D ₁) with n = 3, 4, 5 is discussed. In particular, $ \tilde \Upsilon $ \tilde \Upsilon (≈11120), originating from the pure 5³ D ₁ state, can acquire a rather large dielectron width, ∼130 eV, so that this resonance may become manifest in the e ⁺ e ⁻ experiments. On the contrary, the widths of pure D-wave states are very small, Γ _ee (n ³ D ₁)≤ 2 eV.