Magnetic Manipulation of Massless Dirac Fermions in Graphene Quantum Dot

We have theoretically analyzed the quasibound states in a graphene quantum dot (GQD) with a magnetic flux Φ in the centre. It is shown that the two-fold time reversal degeneracy is broken and the quasibound states of GQD with positive/negative angular momentum shifted upwards /downwards with increasing the magnetic flux. The variation of the quasibound energy depends linearly on the magnetic flux, which is quite different from theparabolic relationship for Schrödinger electrons. The GQD's quasibound states spectrum shows an obvious Aharonov-Bohm (AB) oscillations with the magnetic flux. It is also shown that the quasibound state with energy equal to the barrier height becomes a bound state completely confined in GQD.     

Quasibound states in semiconductor quantum well structures

We present a study on quasibound states in multiple quantum well structures using a finite element model (FEM). The FEM is implemented for solving the effective mass Schrödinger equation in arbitrary layered semiconductor nanostructures with an arbitrary applied potential. The model also includes nonparabolicity effects by using an energy dependent effective mass, where the resulting nonlinear eigenvalue problem was solved using an iterative approach. We focus on quasibound/continuum states above the barrier potential and show that such states can be determined using cyclic boundary conditions. This new method enables the determination of both bound and quasibound states simultaneously, making it more efficient than other methods where different boundary conditions have to be used in extracting the relevant states. Furthermore, the new method lifted the problem of quasibound state divergence commonly seen with many other methods of calculation. Hence enabling accurate determination of dipole matrix elements involving both bound and quasibound states. Such calculations are vital in the design of intersubband optoelectronic devices and reveal the interesting properties of quasibound states above the potential barriers.     

Mid/far-infrared photo-detectors based on graphene asymmetric quantum wells

We conducted a theoretical study on the electronic properties of a single-layer graphene asymmetric quantum well.Quantification of energy levels is limited by electron–hole conversion at the barrier interfaces and free-electron continuum.Electron–hole conversion at the barrier interfaces can be controlled by introducing an asymmetry between barriers and taking into account the effect of the interactions of the graphene sheet with the substrate.The interaction with the substrate induces an effective mass to carriers,allowing observation of Fabry–P′erot resonances under normal incidence and extinction of Klein tunneling.The asymmetry,between barriers creates a transmission gap between confined states and free-electron continuum,allowing the large graphene asymmetric quantum well to be exploited as a photo-detector operating at mid-and far-infrared frequency regimes.     

Resonant transport and quantum bound states in Z-shaped graphene nanoribbons

We study the transport properties of a Z-shaped graphene nanoribbon (GNR). It is found that the quasibound states in the Z-shaped junction induce resonant peaks around the Dirac point in the conductance profile. The resonant transmission via the quantum bound state is very sensitive to the size of the junction. The number and also the lifetimes of the quasibound states increase with the size of the Z-shaped junction. Long lifetime bound states which do not induce obvious resonant peaks exist in the junction with a wider or longer zigzag edged GNR. The resonant characteristics of the Z-shaped GNR can be tuned by the variation of the geometrical size.     

Resonance-enhanced group delay times in an asymmetric single quantum barrier

It is shown that transmission and reflection group delay times in an asymmetric single quantum barrier are greatly enhanced by the transmission resonance when the energy of incident particles is larger than the height of the barrier. The resonant transmission group delay is of the order of the quasibound state lifetime in the barrier region. The reflection group delay can be either positive or negative, depending on the relative height of the potential energies on the two sides of the barrier. Its magnitude is much larger than the quasibound state lifetime. These predictions have been observed in microwave experiments.     

Electronic states and vibration spectra of CdTe/ZnTe quantum dot superlattices

Electronic and vibrational states in CdTe/ZnTe quantum dot superlattices are studied using optical spectroscopy techniques (photoluminescence in a wide temperature range, IR reflection, and Raman scattering). The effect of the ZnTe barrier layer thickness on the luminescence spectra of the structures is discussed. The luminescence from electronically coupled islands is assumed to be due to spatially indirect excitons because of the specific features of the CdTe/ZnTe heterostructure band structure. A combination of quantum-dot vibrational modes, which has not been observed earlier, is detected in the Raman spectra. Analysis of the lattice IR reflection spectra shows that, in the case of large barrier thicknesses between the quantum-dot planes, elastic stresses are concentrated in the Zn_1?xCd_xTe layers, whereas in structures with lower barrier thicknesses the elastic-strain distribution exhibits a more complicated pattern.     

Lifetime analysis of quasibound states in coupled quantum wells

A simple time-dependent model is presented to investigate lifetimes of the quasibound states in coupled quantum wells (CQWs). The transfer matrix approach is employed to discretize the conduction-band profile of the heterostructure and form a dispersion equation whose zeros correspond to the complex eigenenergies. Both the bound and quasibound states are extracted numerically in the complex plane by Newton's method. The lower and higher well subbands are found to have negative and positive energy shift, respectively, as following the no level crossing theorem. Besides, the decay rate of the quasibound state is approximately proportional to the absolute energy shift. The quasibound states, which have larger energy shift, have shorter lifetime and decay more quickly. Furthermore, the differences in lifetime between the quasibound states in CQWs can be easily realized as all the wave functions are specially adjusted to form the relative probability density distributions.     

Electromagnetic-field-induced resonant structures for an open rectangular quantum dot

We study theoretically the electron transport properties for an open rectangular quantum dot under an external electromagnetic field illumination in the ballistic regime. Using the effective mass free-electron approximation, the scattering matrix for the system has been formulated by the time-dependent mode-match method. Some interesting properties of the electron transmission have been demonstrated through serval numerical examples. The dependence of electron transmission on the electron incident energy is found to exhibit Fano dip structures due to the field-induced intersubband scatterings into quasibound states in the dot. Moreover, with an appropriate incident energy the electron transmission as a function of the field frequency and/or amplitude shows a rich structure. Our results suggest that the electron transport properties of an open rectangular quantum dot are affected by the interplay effects between the nonadiabatic dot-lead connection and the applied field.     

Fano versus Kondo resonances in a multilevel "semiopen" quantum dot

Linear conductance across a large quantum dot via a single level epsilon(0) with large hybridization to the contacts is strongly sensitive to quasibound states localized in the dot and weakly coupled to epsilon(0). The conductance oscillates with the gate voltage due to interference of the Fano type. At low temperature and Coulomb blockade, Kondo correlations damp the oscillations on an extended range of gate voltage values, by freezing the occupancy of the epsilon(0) level itself. As a consequence, the antiresonances of Fano origin are washed out. The results are in good correspondence with experimental data for a large quantum dot in the semiopen regime.     

Study of the electric capacitance spectra on symmetric quantum-dot pattern

We have calculated the ground-state energy of the symmetric quantum-dot pattern by the ab initio calculation method, i.e. unrestricted Hartree-Fock-Roothaan (UHFR) method based on the Gaussian basis, and studied their electric capacitance spectra, assuming each quantum dot of quantum-dot pattern to be confined in a three-dimensional spherical potential well of finite depth. For the systems in question, our results show that our method and theoretical model not only give the electric capacitance peaks similar to s-shell and p-shell atom-like quantum dot, but also show some new fine-structure of electric capacitance in the symmetric quantum-dot pattern system. This method might be a feasible tool to study few-electron problems on the symmetric quantum-dot pattern system.     

Multipole-based modal analysis of gate-defined quantum dots in graphene

A new numerical method based on the multipoles of the Dirac equation is presented for rigorous and fast analysis of electron scattering from gate-defined structures in graphene. The new method is used to study the strongly bound states and the weakly bound states of a circular quantum dot. The accuracy of the obtained results is then verified by the T-matrix method. Furthermore, we characterize the resonances of elliptical gate-defined quantum dots and compare these resonances with the strongly bound states of circular dots. The effects of coupling between two quantum dots are also investigated.     

Optical pumping of quantum-dot nuclear spins

Hyperfine interactions with randomly oriented nuclear spins present a fundamental decoherence mechanism for electron spin in a quantum dot, that can be suppressed by polarizing the nuclear spins. Here, we analyze an all-optical scheme that uses hyperfine interactions to implement laser cooling of quantum-dot nuclear spins. The limitation imposed on spin cooling by the dark states for collective spin relaxation can be overcome by modulating the electron wave function.     

Helical states around a mass-inverted quantum dot in graphene

Topologically protected helical states at a mass-inverted quantum dot in graphene are studied by analyzing both tight-binding and kernel polynomial method calculations. The mass-inverted quantum dot is introduced by considering a heterojunction between two different mass domains, which is similar to the domain wall in bilayer graphene. The numerical results show emergent metallic channels across the mass gap when the signs of the mass terms are opposite. The eigenstates of the metallic channels are revealed to be doubly degenerate—each state propagates along opposite directions, maintaining the time-reversal symmetry of graphene. The robustness of the metallic channels is further examined, concluding with the fact that helical states are secured unless atomic vacancies form near the domain wall. Such helical states circulating along the topological defects may pave a novel route to engineering topological states based on graphene.     

声子对隧穿量子点分子辐射场系统量子相位的影响

用全量子理论导出隧穿量子点分子-辐射场相互作用系统状态满足的微分方程组, 在相干态辐射场和量子点分子处于隧穿激发态及基态的初始条件下, 应用Pegg-Barnett相位理论计算和分析了辐射场的相位概率分布及相位涨落, 研究了声子-量子点分子作用对辐射场相位的影响, 并与Husimi相位分布做了比较. 结果表明, 温度显著影响光场相位概率分布的时间演化规律, 声子既可以抑制也可以增强辐射场相位扩散和涨落, 取决于量子点分子的初态. Husimi相位分布和Pegg-Barnett相位分布符合度相当高. 关键词： 量子点分子 声子 量子相位 Q函数')" href="#">Q函数     

Resonant states in heterostructures of graphene nanoribbons

We study the transport properties of heterostructures of armchair graphene nanoribbons (AGNR) forming a double symmetrical barrier configuration. The systems are described by a single-band tight-binding Hamiltonian and Green's functions formalism, based on real-space renormalization techniques. We present results for the quantum conductance and the current for distinct configurations, focusing our analysis on the dependence of the transport with geometrical effects such as separation, width and transverse dimension of the barriers. Our results show the apparition of a series of resonant peaks in the conductance, showing a clear evidence of the presence of resonant states in the conductor. Changes in the barrier dimensions allow the modulation of the resonances in the conductance, making possible to obtain a complete suppression of electron transmission for determined values of the Fermi energy. The current–voltage curves show the presence of a negative differential resistance effect with a threshold voltage that can be controlled by varying the separation between the barriers and by modulating its confinement potential.     

Magnetotunneling spectroscopy of a biased triple-barrier semiconductor heterostructure

In this work we describe a magnetotunneling spectroscopy technique for probing the localization degree of two-dimensional states and mapping the subbands in the active region of a resonant-tunneling semiconductor heterostructure. The reported experimental data consist of the low-temperature tunneling current traces of an asymmetric triple-barrier structure measured by sweeping an in-plane magnetic field up to 10 T. According to our interpretation model, the main features observed in the tunnel current traces are due to the field-induced resonant transitions between two-dimensional states at the crossing region between dispersion curves. The data reveals the highly localized nature of the quantum states in an asymmetric double-quantum-well structure even for those with very narrow middle barriers.     

Spectrum of localized states in graphene quantum dots and wires

We developed semiclassical method and show that any smooth potential in graphene describing elongated a quantum dot or wire may behave as a barrier or as a trapping well or as a double barrier potential, Fabry–Perot structure, for 1D Schrödinger equation. The energy spectrum of quantum wires has been found and compared with numerical simulations. We found that there are two types of localized states, stable and metastable, having finite life time. These life times are calculated, as is the form of the localized wave functions which are exponentially decaying away from the wire in the perpendicular direction.     

Substitutional impurity in the graphene quantum dots

The process of formation of the localized defect states due to substitutional impurity in sp²-bonded graphene quantum dot is considered using a simple tight-binding-type calculation. We took into account the interaction of the quantum dot atoms surrounding the substitutional impurity from the second row of elements. To saturate the external dangling sp² orbitals of the carbon additionally 18 hydrogen atoms were introduced. The chemical formula of the quantum dot is H₁₈C₅₁X, where X is the symbol of substitutional atom. The position of the localized levels is determined relative to the host-atoms (C) ε_p energies. We focused on the effect of substitutional doping by the B, N and O on the eigenstate energies and on the total energy change of the graphene dots including for O the effect of lattice distorsion. We conclude that B, N, and O can form stable substitutional defects in graphene quantum dot.     

Spatially inhomogeneous states of charge carriers in graphene

The interaction of two-dimensional quasiparticles characterized by a linear dispersion E = ±u|p| (graphene) with impurity potentials is studied. It is shown that discrete levels corresponding to localized states are present in a one-dimensional potential well (quantum wire), whereas such states are absent in a two-dimensional well (quantum dot). The cross section for the scattering of electrons (holes) of graphene by an axially symmetric potential well is determined. It is shown that the cross section tends to a constant value in the limit of infinite particle energy. The effective Hamiltonian is derived for a curved quantum wire of graphene.     

On modeling the mechanical behavior of heterostructures with quantum dots

The problems on simulation of a stressed-strained state in epitaxial quantum-dot heterostructures with and without coating are considered. Within the framework of the continuum approach, a mechanical-mathematical model of a quantum dot is developed. The stressed-strained state in a heterostructure with a quantum dot located under the coating is simulated within the developed model using the well-known analytical solution to the problem on inclusion of the corresponding shape. An isolated quantum dot in the absence of coating is simulated by a set of elastic dipoles uniformly distributed over the region of elastic half-space matching the quantum dot base. Within the model, the problem on deformation of the quantum-dot heterostructure without coating is analytically solved. The analytical solution is used to analyze the stressed-strained state in the structure under consideration.