External electric field, hydrostatic pressure and conduction band non-parabolicity effects on the binding energy and the diamagnetic susceptibility of a hydrogenic impurity quantum dot

Electric field, hydrostatic pressure and conduction band non-parabolicity effects on the binding energies of the lower-lying states and the diamagnetic susceptibility of an on-center hydrogenic impurity confined in a typical GaAs/Al_xGa_1−xAs spherical quantum dot is theoretically investigated, by direct diagonalization of the Hamiltonian. To this end, the effect of band non-parabolicity has been performed, by means of the Luttinger-Kohn effective mass equation. Binding energies and diamagnetic susceptibility of the hydrogenic impurity are computed as a function of the dot size, external electric field strength and hydrostatic pressure, with considering the edge-band non-parabolicity. Results show that the external electric field and the hydrostatic pressure have an obvious influence on the binding energies and the diamagnetic susceptibility of the impurity.     

Diamagnetic susceptibility of hydrogenic donor impurity in low-dimensional semiconducting systems

The binding energies of a hydrogenic donor both in the parabolic and non-parabolic conduction band model within the effective mass approximation have been computed for the low-dimensional semiconducting systems (LDSS) like quantum well, quantum well wire and quantum dot taking GaAs/Al_xGa_1−xAs systems as an example. It is observed that the effect of non-parabolicity is not effective when the system goes to lower dimensionality. The diamagnetic susceptibility of a hydrogenic donor impurity has also been computed in these LDSS in the infinite barrier model. Since no theoretical or experimental works on the diamagnetic susceptibility of LDSS are available in the literature, as a realistic case the diamagnetic susceptibility has been computed in the finite barrier model (x=0.3) for a quantum well and the results are discussed in the light of semiconductor-metal transition.     

Effect of Γ-X band crossover and impurity location on the diamagnetic susceptibility of a donor in a quantum well

We present the calculation of diamagnetic susceptibility (χ_dia) of a hydrogenic donor in GaAs/Al_xGa_1−xAs quantum well for various compositions of Al and for different impurity locations within the well. The effect of Γ-X band crossing due to hydrostatic pressure on χ_dia is also investigated taking into account the non-parabolicity of the conduction band.     

Conduction Band-Edge Non-Parabolicity Effects on Impurity States in （In,Ga）N/GaN Cylindrical QWWs

In this paper, the conduction band-edge non-parabolicity （NP） and the circular cross-section radius effects on hydrogenie shallow-donor impurity ground-state binding energy in zinc-blende （ZB） InGaN/GaN cylindrical QWWs are reported. The finite potential barrier between （In,Ga）N web and CaN environment is considered. Two models of the conduction band-edge non-parabolicity are taking into account. The variational approach is used within the framework of single band effective-mass approximation with one-parametric 1S-hydrogenic triaJ wave-function. It is found that NP effect is more pronounced in the wire of radius equal to effective Bohr radius than in large and narrow wires. Moreover, the binding energy peak shifts to narrow wire under NP effect. A good agreement is shown compared to the findings results.     

Diamagnetic susceptibility of hydrogenic donor impurity in a V-groove GaAs/Ga<Subscript>1-</Subscript><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As quantum wire

In this work, the diamagnetic susceptibility and the bindingenergy of a hydrogenic donor impurity both in the parabolic andnon-parabolic conduction band models have been calculated withinthe effective mass approximation for a V-grooveGaAs/Ga_{1- x} Al _x As quantum wire. According to the resultsobtained from the present work reveals that (i) the value ofdiamagnetic susceptibility due to the non-parabolicity effect ishigher than that of parabolicity effect; (ii) the values ofdiamagnetic susceptibility and binding energy due to thenon-parabolicity effect is not appreciable at low Al molefractions; (iii) the diamagnetic susceptibility approaches to thebulk value both in L \(\rightarrow\) 0 or L \(\rightarrow\) ∞; (iv)the effect of non-parabolocity is not appreciable in the bindingenergy and energy dependent effective mass, for energies lowerthan 50 MeV.     

Binding energy and diamagnetic susceptibility of an on-center hydrogenic donor impurity in a spherical quantum dot placed at the center of a cylindrical nano-wire

The binding energy and diamagnetic susceptibility of an on-center hydrogenic donor impurity in an InAs spherical quantum dot placed at the center of a GaAs cylindrical nano-wire have been investigated using finite element method in the framework of the effective mass approximation. The binding energy and diamagnetic susceptibility are calculated as a function of the dot radius, nano-wire radius and nano-wire height. The results show that as the dot radius increases (I) for a dot radius smaller than some critical value, the effect of the spherical confinement on the energy levels becomes negligible and the energies remain constant, for a dot radius larger than some specific value, the energy levels decrease (II) the ground and the first excited state binding energies increase, reach a maximum and then decrease (III) the ground state diamagnetic susceptibility increases, reach a maximum and then decreases (IV) the first excited state diamagnetic susceptibility increases, indicating two maxima and then decreases. The effects of the nano-wire dimensions on the binding energy and diamagnetic susceptibility have also been studied. We found that the binding energy and diamagnetic susceptibility decrease reach a minimum value and then increase as the nano-wire radius increases. Finally we found that as the height of the nano-wire increases the ground state binding energy decreases, reaches a minimum value and then increases but the first excited state binding energy decreases and reaches a constant value.     

The effect of band non-parabolicity of shallow donors

We have studied theoretically the effect of non-parabolicity of conduction band on the binding energies of shallow donors. The calculation is carried out in momentum space. We find that the binding energies are increased by 3 to 5 percent for shallow donors in Hg_1-xCd_xTe, GaAs, and InP. The discrepencies between the measured donor ionization energies in GaAs and the value from hydrogenic model are, in a substantial part, due to the non-parabolicity effect.     

Diamagnetic susceptibility of a laser dressed donor in a quantum well

The binding energy of laser dressed donor impurity is calculated under the influence of a magnetic field in a quantum well. The binding energy of the ground state of a donor is investigated, within the single band effective mass approximation, variationally for different concentrations at the well centre. The effect of laser and magnetic fields on diamagnetic susceptibility of the hydrogenic donor is reported. The Landau energy levels of electrons in the quantum well as a function of magnetic field are reported. The results show that the diamagnetic susceptibility (i) decreases drastically as intensity of the laser field increases (ii) increases with the magnetic field strength (iii) decreases as the Al-concentration decreases and (iv) a variation of increase in binding energy is observed when non-parabolicity is included and this effect is predominant for narrow wells. Our results are in good agreement with previous investigations for other heterostructures in the presence of laser intensity.     

Effect of conduction band parabolicity on the spectrum and binding energy of a hydrogenic impurity in GaAs spherical quantum dots

The energy levels and binding energies of a hydrogenic impurity in GaAs spherical quantum dots with radius R are calculated by the finite difference method. The system is assumed to have an infinite confining potential well with radius R, which can be viewed as a hard wall boundary condition. The parabolicity of the conduction band profile for GaAs material can be viewed as a parabolic potential well. The energy levels and binding energies are depended dramatically on the radius of the quantum dot and the parabolic potential well. The results show that parabolic potential can remarkably alter the energy level ordering and binding energy level ordering of hydrogenic impurity states for the quantum dot with a smaller radius R.     

Magnetic field induced diamagnetic susceptibility of a hydrogenic donor in a GaN/AlGaN quantum dot

The binding energies of a hydrogenic donor in a GaN/AlGaN quantum dot are calculated in the influence of magnetic field. The calculations are carried out using the single-band effective mass approximation within a variational scheme. The magnetic field induced binding energy and diamagnetic susceptibility of the hydrogenic donor are obtained as a function of dot radius. Calculations have been carried out with and without the Zeeman effect through the energy-dependent effective mass. The diamagnetic shift of the hydrogenic donor is found for different dot radii. Our results show that (i) the binding energy is higher for smaller dot radii and the magnetic field effects are predominant for larger dot sizes, (ii) the binding energy is higher when the Zeeman effect is included for all the magnetic fields, (iii) the diamagnetic susceptibility increases with the magnetic field and is not pronounced for smaller dot radii and (iv) the diamagnetic shift has a good influence of larger dot radii.     

Linear and Nonlinear Optical Properties of Spherical Quantum Dots:Effects of Hydrogenic Impurity and Conduction Band Non-Parabolicity

Simultaneous effects of an on-center hydrogenic impurity and band edge non-parabolicity on intersubband optical absorption coefficients and refractive index changes of a typical GaAs/Al x Ga 1 x As spherical quantum dot are theoretically investigated,using the Luttinger-Kohn effective mass equation.So,electronic structure and optical properties of the system are studied by means of the matrix diagonalization technique and compact density matrix approach,respectively.Finally,effects of an impurity,band edge non-parabolicity,incident light intensity and the dot size on the linear,the third-order nonlinear and the total optical absorption coefficients and refractive index changes are investigated.Our results indicate that,the magnitudes of these optical quantities increase and their peaks shift to higher energies as the influences of the impurity and the band edge non-parabolicity are considered.Moreover,incident light intensity and the dot size have considerable effects on the optical absorption coefficients and refractive index changes.     

压力下GaN/Ga1-xAlxN量子点中杂质态的界面效应

考虑界面处导带弯曲,流体静压力以及有效质量随量子点位置的依赖性,采用变分法以及简化相干势近似,研究了无限高势垒GaN/Ga_1-xAl_xN球形量子点中杂质态的界面效应,计算了杂质态结合能随量子点尺寸、电子面密度以及压力的变化关系。结果表明,结合能随压力的增大呈线性增加的趋势,有效质量位置的依赖性以及导带弯曲对结合能有不容忽视的影响。     

Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum well

Binding energies of ground and a few low lying excited states of a hydrogenic donor confined in a zinc-blende GaN/AlGaN quantum well are investigated. They are computed within the framework of single band effective mass approximation, by means of a variational approach. The donor states are investigated with the various impurity positions as a function of well width. The calculations have been carried out with the inclusion of conduction band non-parabolicity through the energy dependent effective mass. The variational solutions have been improved by using a two-parametric trial wavefunction. The results seem better and good agreement with the other investigators. To support our results, we observe that the values of variational parameters are consistent when two parameter wave function is used. We find that the inclusion of non-parabolic effects leads to more binding for all the values of well width and is significant for narrow wells. The results are compared with the existing available literature.     

Simultaneous effects of pressure and temperature on the binding energy and diamagnetic susceptibility of a laser dressed donor in a spherical quantum dot

Binding energies and diamagnetic susceptibility of an impurity in a spherical GaAs quantum dot under the simultaneous influence of static pressure, temperature and laser radiation are investigated. Pressure- and temperature-dependent dressed potential which is produced by the combined effects of laser radiation and impurity considerably change the energy spectrum and diamagnetic susceptibility of the system. It is shown that binding energies and diamagnetic susceptibility increase with increasing pressure. Moreover, laser radiation effects on the diamagnetic susceptibility are not significant in comparison with its effects on the binding energy.     

应变纤锌矿GaN/AlxGa1-xN柱形量子点中类氢施主杂质态结合能的压力效应

考虑应变,在有效质量、有限高势垒近似下,变分研究了纤锌矿GaN/AlxGa1-xN柱形量子点中类氢施主杂质态结合能随流体静压力、杂质位置及量子点结构参数(量子点高度、半径、Al含量)的变化关系．结果表明,类氢施主杂质态结合能随流体静压力增大而增大,且在量子点尺寸较小时,流体静压力对杂质态结合能的影响更为显著．受流体静压力的影响,杂质态结合能随量子点高度、半径的增加而单调减少,且变化趋势加剧;随Al含量增加而增大的趋势变缓．无论是否施加流体静压力,随着类氢施主杂质从量子点左界面沿材料生长方向移至右界面,杂质态结合能在量子点的右半部分存在一极大值．流体静压力使得极大值点向量子点中心偏移．     

Simultaneous effects of temperature and pressure on diamagnetic susceptibility of a shallow donor in a quantum antidot

The effect of temperature and pressure, simultaneously, on the diamagnetic susceptibility and binding energy of a hydrogenic donor impurity at the center of a GaAs/Ga_1−xAl_xAs quantum antidot is studied within the effective mass approximation. For this goal, we first analytically solve the Schrödinger equation to obtain wavefunctions and energy levels. Then, using the electronic states, we can calculate the diamagnetic susceptibility. The results obtained from the present work reveals that (i) the diamagnetic susceptibility increases with increasing pressure, (ii) the diamagnetic susceptibility decreases by increasing temperature, (iii) the value of 〈r²〉 decreases with increasing pressure due to the quantum confinement, and (iv) an increase in the pressure enhances the binding energy for a constant temperature.     

纤锌矿GaN/AlxGa1-xN应变柱形量子点中杂质态结合能及其压力效应

考虑应变及流体静压力,在有效质量近似下,利用变分法计算了无限高GaN/Al<,x>Ga<,1-x>N应变柱形量子点中类氢杂质结合能.结果表明,在量子点尺寸较小情况下,应变增加了杂质态结合能;而在量子点尺寸较大情况下,应变降低了杂质态结合能.随着Al摩尔分数的增加,杂质态结合能减小.杂质态结合能随着流体静压力的增加而增大...     

Effect of an intense laser field on donor impurities in spherical quantum dots

The effect of an intense laser field on the binding energy of hydrogenic impurity states with an impurity atom located at the center of a spherical quantum dot confined by an infinite barrier potential are studied as a function of the dot radius and of the intensity and frequency of the laser field. Accurate binding energies are obtained for the 1s, 2s and 2p states by numerical integration of the Schrödinger equation. The binding energies are found to increase with decrease in the dot radius, and decrease with increase in the value of the laser field amplitude λ in all cases.     

Magnetic-field effect on the diamagnetic susceptibility of hydrogenic impurities in quantum well-wires

We have studied the magnetic field effects on the diamagnetic susceptibility and binding energy of a hydrogenic impurity in a quantum well-wire by taking into account spatially dependent screening. Using the effective-mass approximation within a variational scheme, binding energy and diamagnetic susceptibility of donor are obtained as a function of the magnetic field, length of the square quantum well-wire for different impurity positions. It is shown that the magnetic field effects on diamagnetic susceptibility can be more important for donors in quantum well-wires over a large range of wire dimensions.     

Binding energy of a hydrogenic impurity in a 2D circular quantum dot

The binding energies of hydrogenic impurity states with an impurity atom located at the center of a two-dimensional circular quantum dot confined by an infinite barrier potential are studied as a function of the dot radius and of the screening parameter in the potential. Accurate binding energies are obtained for the 1s, 2s and 2p states by numerical integration of the 2D Schrödinger equation. The binding energies are found to increase with a decrease in the dot radius, and decrease with an increase in the value of the screening parameter q_sin all cases. Further the levels become unbound at a finite value of the dot radius.