Weak-localization magnetoresistance and valley symmetry in graphene

Because of the chiral nature of electrons in a monolayer of graphite (graphene) one can expect weak antilocalization and a positive weak-field magnetoresistance in it. However, trigonal warping (which breaks p-->-p symmetry of the Fermi line in each valley) suppresses antilocalization, while intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore conventional negative magnetoresistance. We show this by evaluating the dependence of the magnetoresistance of graphene on relaxation rates associated with various possible ways of breaking a "hidden" valley symmetry of the system.     

Anisotropic resistivity of the monolayer graphene in the trigonal warping and connected Fermi curve regimes

In the present study, the anisotropic resistivity of the monolayer graphene has been obtained in semiclassical regime beyond the Dirac point approximation. In particular, detailed investigations were made on the dependence of conductivity on the Fermi energy. At low energies, in the vicinity of the Dirac points, band energy of the monolayer graphene is isotropic at the Fermi level. Meanwhile, at the intermediate Fermi energies anisotropic effects such as trigonal warping is expected to be the origin of the anisotropic resistivity. However, besides the band anisotropy there also exists an other source of anisotropic resistivity which was introduced by scattering matrix. At high energies it was shown that the band anisotropy is less effective than the anisotropy generated by the scattering matrix. It was also shown that there exist two distinct regimes of anisotropic resistivity corresponding the trigonal warping and connected Fermi curve at intermediate and high energies respectively.     

Role of the trigonal warping on the minimal conductivity of bilayer graphene

Using a reformulated Kubo formula we calculate the zero-energy minimal conductivity of bilayer graphene taking into account the small but finite trigonal warping. We find that the conductivity is independent of the strength of the trigonal warping and it is 3 times as large as that without trigonal warping and 6 times larger than that in single layer graphene. Although the trigonal warping of the dispersion relation around the valleys in the Brillouin zone is effective only for low-energy excitations, our result shows that its role cannot be neglected in the zero-energy minimal conductivity.     

Band structure effects on the nonlinear optical response of bilayer graphene

Recently, Rabi-like oscillations that occur far from resonance were predicted in monolayer graphene. In bilayer graphene, when the trigonal warping effect is taken into account, this new Rabi frequency shows a zero non-trivial minimum as a function of the strength of the applied electric field in addition to the trivial minimum at zero field. The zero non-trivial minimum occurs where the ‘leg pocket’ of the Fermi surface develops, described in the pioneering work of McCann et al. [Eur. Phys. J. Special Topics 148, 91 (2007)]. Thereafter, the anomalous Rabi frequency varies linearly with the square of the intensity of the applied field consistent with a bilayer system without trigonal warping. It is seen that this anomalous Rabi frequency is affected much more by trigonal warping than the conventional Rabi frequency. The induced current is also significantly affected by the trigonal warping. A fully numerical solution of the optical Bloch equations completely corroborates the analytical findings and provides a basis for the approximation schemes employed.     

Mesoscopic conductance fluctuations in graphene

We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same scattering mechanisms. It is shown that the variance of conductance fluctuations depends not only on inelastic scattering that controls dephasing but also on elastic scattering. In particular, contrary to its effect on weak localization, strong intervalley scattering suppresses conductance fluctuations in graphene. The correlation energy, however, is independent of the details of elastic scattering and can be used to determine the electron temperature of graphene structures.     

Quantum magneto-optics of the graphite family

The optical conductivity of graphene, bilayer graphene, and graphite in quantizing magnetic fields is studied. Both dynamical conductivities, longitudinal and Hall’s, are evaluated analytically. The conductivity peaks are explained in terms of electron transitions. Correspondences between the transition frequencies and the magneto-optical features are established using the theoretical results. We show that trigonal warping can be considered within the perturbation theory for strong magnetic fields larger than 1 T. The semiclassical approach is applied for weak fields when the Fermi energy is much larger than the cyclotron frequency. The main optical transitions obey the selection rule with Δn = 1 for the Landau number n, but the Δn = 2 transitions due to the trigonal warping are also possible. The Faraday/Kerr rotation and light transmission/reflection in quantizing magnetic fields are calculated. Parameters of the Slonczewski-Weiss-McClure model are used in the fit taking the previous de Haas-van Alphen measurements into account and correcting some of them in the case of strong magnetic fields.     

Weak antilocalization in epitaxial graphene: evidence for chiral electrons

Transport in ultrathin graphite grown on silicon carbide is dominated by the electron-doped epitaxial layer at the interface. Weak antilocalization in 2D samples manifests itself as a broad cusplike depression in the longitudinal resistance for magnetic fields 10 mT相似文献   

High-energy limit of massless Dirac fermions in multilayer graphene using magneto-optical transmission spectroscopy

We have investigated the absorption spectrum of multilayer graphene in high magnetic fields. The low-energy part of the spectrum of electrons in graphene is well described by the relativistic Dirac equation with a linear dispersion relation. However, at higher energies (>500 meV) a deviation from the ideal behavior of Dirac particles is observed. At an energy of 1.25 eV, the deviation from linearity is approximately 40 meV. This result is in good agreement with the theoretical model, which includes trigonal warping of the Fermi surface and higher-order band corrections. Polarization-resolved measurements show no observable electron-hole asymmetry.     

Electronic properties of grains and grain boundaries in graphene grown by chemical vapor deposition

We synthesize hexagonal shaped single-crystal graphene, with edges parallel to the zig-zag orientations, by ambient pressure CVD on polycrystalline Cu foils. We measure the electronic properties of such grains as well as of individual graphene grain boundaries, formed when two grains merged during the growth. The grain boundaries are visualized using Raman mapping of the D band intensity, and we show that individual boundaries between coalesced grains impede electrical transport in graphene and induce prominent weak localization, indicative of intervalley scattering in graphene.     

Fully valley-polarized electron beams in graphene

We propose a device to break the valley degeneracy in graphene and produce fully valley-polarized currents that can be either split or collimated to a high degree in a experimentally controllable way. The proposal combines two recent seminal ideas: negative refraction and the concept of valleytronics in graphene. The key new ingredient lies in the use of the specular shape of the Fermi surface of the two valleys when a high electronic density is induced by a gate voltage (trigonal warping). By changing the gate voltage in a n-p-n junction of a graphene transistor, the device can be used as a valley beam splitter, where each of the beams belong to a different valley, or as a collimator. The result is demonstrated through an optical analogy with two-dimensional photonic crystals.     

Perturbation theory for a hamiltonian linear in quasimomentum

Perturbation theory has been proposed to take into account small terms in the multiband Hamiltonian, which lead to significant changes such as the trigonal warping of the Fermi surface. The theory is similar to the “cross technique” and is reduced to the self-energy corrections to the matrix Green’s function. A particular application to graphite and a graphene bilayer has been given.     

Robust transport properties in graphene

Two-dimensional Dirac fermions are used to discuss quasiparticles in graphene in the presence of impurity scattering. Transport properties are completely dominated by diffusion. This may explain why recent experiments did not find weak localization in graphene. The diffusion coefficient of the quasiparticles decreases strongly with increasing strength of disorder. Using the Kubo formalism, however, we find a robust minimal conductivity that is independent of disorder. This is a consequence of the fact that the change of the diffusion coefficient is fully compensated by a change of the number of delocalized quasiparticle states.     

Weak localization in bilayer graphene

We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance--a signature of weak localization--is observed at different carrier densities, including the electroneutrality region. It is very different, however, from the weak localization in conventional two-dimensional systems. We show that it is controlled not only by the dephasing time, but also by different elastic processes that break the effective time-reversal symmetry and provide intervalley scattering.     

The effect of spin-orbit interaction on optical conductivity in graphene

We present a systematic investigation of the effect of spin-orbit interaction on optical conductivity in monolayer graphene. Our key findings are: (i) level splitting at various crystal symmetry points caused by true spin as well as pseudospin of the electrons gives rise to a resonant current response; (ii) under heavy doping, the spin-orbit interaction leads to a re-entrance of finite conductivity at very low frequency which was strictly forbidden in the absence of spin-orbit coupling; (iii) deformation of band structure and the topological properties of trigonal warping are analytically identified in a low-energy conical-like approximation.     

Transport properties of diazonium functionalized graphene: chiral two-dimensional hole gases

The electric transport properties of diazonium functionalized graphene (DFG) were investigated. The temperature dependence of the resistivity (ρ-T) and the Shubnikov-de Haas oscillation of the DFG revealed two-dimensional hole gas (2DHG) behaviors. The DFGs exhibited unusual weak localization behaviors in which both inelastic and chirality-breaking elastic scattering processes should be taken into account, meaning that graphene chirality was maintained. Because of the giant decrease in the diffusion coefficient, the scattering rates remained relatively low in the presence of suppression of the scattering lengths. The decreases of both the mean free path and the Fermi velocity were responsible for the suppression of the diffusion coefficient and hence the charge mobility.     

The low energy electronic band structure of bilayer graphene

We employ the tight binding model to describe the electronic band structure of bilayer graphene and we explain how the optical absorption coefficient of a bilayer is influenced by the presence and dispersion of the electronic bands, in contrast to the featureless absorption coefficient of monolayer graphene. We show that the effective low energy Hamiltonian is dominated by chiral quasiparticles with a parabolic dispersion and Berry phase 2π. Layer asymmetry produces a gap in the spectrum but, by comparing the charging energy with the single particle energy, we demonstrate that an undoped, gapless bilayer is stable with respect to the spontaneous opening of a gap. Then, we describe the control of a gap in the presence of an external gate voltage. Finally, we take into account the influence of trigonal warping which produces a Lifshitz transition at very low energy, breaking the isoenergetic line about each valley into four pockets.     

Observation of electron weak localization and correlation effects in disordered graphene

We have studied the electron transport properties of a disordered graphene sample, where the disorder was intentionally strengthened by Ga⁺ ion irradiation. The magneto-conductance of the sample exhibits a typical two-dimensional electron weak localization behavior, with electron-electron interaction as the dominant dephasing mechanism. The absence of electron anti-weak localization in the sample implies strong intersublattice and/or intervalley scattering caused by the disorders. The temperature and bias-voltage dependencies of conductance clearly reveal the suppression of conductance at low energies, indicating opening of a Coulomb gap due to electron-electron interaction in the disordered graphene sample. Supported by the National Natural Science Foundation of China (Grant Nos. 10774172 and 10874220), and the National Basic Research Program of China from the MOST (Grant No. 2006CB921304)     

Weak localization in graphene flakes

We show that the manifestation of quantum interference in graphene is very different from that in conventional two-dimensional systems. Because of the chiral nature of charge carriers, it is not only sensitive to inelastic, phase-breaking scattering, but also to a number of elastic scattering processes. We study weak localization in different samples and at different carrier densities, including the Dirac region, and find the characteristic rates that determine it. We show how the shape and quality of graphene flakes affect the values of the elastic and inelastic rates and discuss their physical origin.     

Klein backscattering and Fabry-Pérot interference in graphene heterojunctions

We present a theory of quantum-coherent transport through a lateral p-n-p structure in graphene, which fully accounts for the interference of forward and backward scattering on the p-n interfaces. The backreflection amplitude changes sign at zero incidence angle because of the Klein phenomenon, adding a phase pi to the interference fringes. The contributions of the two p-n interfaces to the phase of the interference cancel with each other at zero magnetic field, but become imbalanced at a finite field. The resulting half-period shift in the Fabry-Pérot fringe pattern, induced by a relatively weak magnetic field, can provide a clear signature of Klein scattering in graphene. This effect is shown to be robust in the presence of spatially inhomogeneous potential of moderate strength.