氧化物薄膜的离子束溅射沉积

用离子束溅射沉积的方法制备的TiO_2、ZrO_2薄膜的光吸收损耗明显降低,对其折射率、光吸收和抗激光损伤阈值等特性进行了分析.     

Dual ion-beam sputtering deposition of palladium-fluoropolymer nano-composites

The morphological (TEM) and chemical (XPS, ARXPS) characterizations of fluoropolymer films modified with palladium particles (CF_x(Pd)) are reported in this article. The films, which have different levels of metal content, have been deposited by ion beam co-sputtering a Teflon target and a palladium one. Composite films with a thickness of a few nanometers have also been deposited and analyzed. For all degrees of thickness, the analyses show the fluoropolymer nature of the hosting material, the nanoscopic character of metal domains, and their uniform distribution in the polymer matrix. The likely application of this ion sputter-deposited material in the sensor field has also been preliminary tested. PACS 81.05.Qk; 82.35.Np; 81.15.Cd; 79.60.Fr; 07.07.Df     

Ion-beam sputtering deposition of CsI thin films

Stoichiometric CsI thin films were deposited by Ar ion-beam sputtering of a CsI target at room temperature. The sputtered 100-nm thick CsI films obtained were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM) and quantum efficiency (QE) measurements. As it was expected, the chemical, morphological, crystalline and photo-emissive properties of CsI films obtained depended on the deposition parameters. Comparison with results obtained for evaporated CsI films indicated that surface morphology, i.e., the effective photo-emissive surface area, is one of the important parameters in influencing the QE . PACS 81.15.-z; 79.60.Dp; 68.37.Ps     

磁控溅射材料沉积速率的定标方法的研究

介绍了一种利用磁控溅射制备多层膜速率的定标方法。用高精度磁控溅射镀膜设备在同一块基片上先后镀制了两种周期的多层膜,用X射线衍射仪对其进行掠入射衍射测量,测量数据经线性拟合,可同时求得两种多层膜的周期,进而得到镀膜速率。与常用的定标方法相比,该方法不仅可以得到与常用定标方法相同的实验结果,而且提高了工作效率。     

Formation of GaAs nanowhisker arrays by magnetron sputtering deposition

The possibility is demonstrated of fabricating arrays of cone-shaped GaAs nanowhiskers with a surface number density of up to 10⁹ cm^-2, a characteristic height ranging from 300 to 10000 nm, and a transverse size of approximately 200 nm at the base and from 200 to 10 nm or smaller at the top. The characteristic height of GaAs nanowhiskers varies in direct proportion to the effective thickness of the deposited material layer and in inverse proportion to the transverse nanowhisker size at the top. The growth of GaAs nanowhiskers is studied as a function of the deposition rate, the temperature, and the crystallographic orientation of the substrate. From an analysis of the obtained dependences of the nanowhisker size on these parameters, it is concluded that GaAs nanowhiskers are formed through the diffusion mechanism.     

Direct current magnetron sputtering deposition of InN thin films

In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N₂ (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.     

Molecular dynamics and experimental studies on deposition mechanisms of ion beam sputtering

Molecular dynamics (MD) simulation and experimental methods are used to study the deposition mechanism of ionic beam sputtering (IBS), including the effects of incident energy, incident angle and deposition temperature on the growth process of nickel nanofilms. According to the simulation, the results showed that increasing the temperature of substrate decreases the surface roughness, average grain size and density. Increasing the incident angle increases the surface roughness and the average grain size of thin film, while decreasing its density. In addition, increasing the incident energy decreases the surface roughness and the average grain size of thin film, while increasing its density. For the cases of simulation, with the substrate temperature of 500 K, normal incident angle and 14.6 × 10⁻¹⁷ J are appropriate, in order to obtain a smoother surface, a small grain size and a higher density of thin film. From the experimental results, the surface roughness of thin film deposited on the substrates of Si(1 0 0) and indium tin oxide (ITO) decreases with the increasing sputtering power, while the thickness of thin film shows an approximately linear increase with the increase of sputtering power.     

Nitrogen-doped ZnO prepared by capillaritron reactive ion beam sputtering deposition

Nitrogen-doped ZnO thin films have been prepared by reactive ion beam sputtering deposition utilizing a capillaritron ion source. X-ray diffraction (XRD) analysis of the as-deposited film exhibits a single strong ZnO (002) diffraction peak centred at 34.40°. Post-growth annealing causes increase of grain size and decrease of c-axis lattice constant. Micro-Raman spectroscopy analysis of the as-deposited film shows strong nitrogen-related local vibration mode at 275, 582, 640 and 720 cm⁻¹, whereas the E₂ mode of ZnO at 436 cm⁻¹ can barely be identified. Annealing at 500-800 °C causes decrease of 275, 582, 640 and 720 cm⁻¹ and increase of 436 cm⁻¹ intensity, indicating out-diffusion of nitrogen and improvement of ZnO crystalline quality. Unlike un-doped ZnO, the surface roughness of nitrogen-doped ZnO deteriorates after annealing, which is also attributed to the out-diffusion of nitrogen. A nitrogen concentration of ∼10²¹/cm³ was observed while type conversion from n-type to p-type was not achieved, which is likely due to the formation of Zn_I-N_O or (N₂)_O that act as donor/double donors.     

Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition

Self-assembled Ge nanodots with areal number density up to 2.33×1010 cm-2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition. The dot density, a function of deposition rate and Ge coverage, is observed to be limited mainly by the transformation from two-dimensional precursors to three-dimensional islands, and to be associated with the adatom behaviors of attachment and detachment from the islands. An unusual increasing temperature dependence of nanodot density is also revealed when a high ion energy is employed in sputtering deposition, and is shown to be related to the breaking down of the superstrained wetting layer. This result is attributed to the interaction between energetic atoms and the growth surface, which mediates the island nucleation.     

Energy deposition,reflection and sputtering in hyperthermal rare-gas→Cu bombardment

Using molecular-dynamics simulation, we study the scattering and penetration of normally incident hyperthermal (5–400 eV) Ne, Ar, and Xe atoms off a Cu crystal. We find that between 80% and 98% of the incident energy is deposited in the solid; the fraction depends primarily on the projectile mass, and — for not too low energies — only slightly on the bombarding energy. At low energy, the major part of the non-deposited energy is carried away by the reflected projectile. At energies above the sputter threshold, an increasingly important contribution of between 2% and 6% of the incident energy is carried away by sputtered particles. These results compare well with experiment. Electronic inelastic losses show only little influence on this behaviour. We demonstrate that the inclusion of a realistic attractive interaction between the projectile and the target atoms influences the energy deposition considerably at energies below around 100 eV.     

Effect of deposition power and pressure on rate deposition and resistivity of titanium thin films grown by DC magnetron sputtering

ABSTRACT

Based on magnetron sputtering deposition technology, titanium (Ti) thin films are deposited on silicon (Si) substrate using different preparation conditions such as sputtering power and pressure. The influence of altering these conditions on deposition rate and microstructure is studied. The results show that sputtering power significantly affects the rate of deposition and the resistivity. The deposition rate of the Ti thin film increases when the resistivity decreases under sputtering powers of 150–225?W with a pressure of 0.8?Pa and Argon (Ar) flux of 80 sccm. As sputtering power was increased further (from 225 to 250?W), the deposition rate reduced and the resistivity augmented. Pressure also has influence on the deposition rate and resistivity – when pressure increases from 0.6 to 0.8?Pa, the deposition rate escalates while the resistivity reduces; when the pressure is raised from 0.8 to 1.0?Pa with Ar flux of 100 sccm, the deposition rate decreases and resistivity increases. The surface chemical compositions and the structures of the Ti film were studied by using X-ray photoelectron spectroscopy (XPS) and X-ray diffractometer (XRD). Observing the cross-section of the thin-film samples produced by scanning electron microscope (SEM) reveals the influence of the preparation conditions used on the microstructure and confirms the influence of sputtering power and pressure on the resistivity.     

Model of the coating growth under the conditions of magnetron sputtering deposition

A mathematical model of a coating that grows during magnetron deposition is formulated and examined. The effect of the main technological and kinetic parameters on the coating growth dynamics is investigated.     

双离子束溅射沉积HfO­­2光学薄膜的研究

用双离子束溅射沉积氧化铪光学薄膜,并对此工艺下制备的氧化铪薄膜进行了光学性质、残余应力、结构特性以及激光损伤特性的研究。实验结果表明,用双离子束溅射沉积的氧化铪薄膜不仅结构均匀,膜层致密,无定形结构,而且具有极低的散射和吸收,均匀的非晶结构,杂质缺陷少,激光损伤阈值高。     

离子束溅射和离子辅助淀积DWDM滤光片的膜厚均匀性

用离子束溅射和离子辅助淀积技术制备DWDM滤光片的关键问题是必须获得优良的膜层厚度均匀性。采用实验修正膜层厚度修正板的办法获得了较好的均匀性分布 ,给出了实验配置、实验方法和实验结果 ,并对实验结果作了分析讨论     

Magnetron sputtering of YBaCuO target: Effects of discharge voltage and deposition rate variation

The time variations of the discharge voltage and YBaCuO film deposition rate in an on-axis magnetron sputterer are studied. In the case of an YBaCuO ceramic target, the discharge voltage and the rate of superconducting phase deposition decrease with time, exponentially approaching a quasi-steady regime. At a pressure of 100 Pa, a decrease in the magnetic field induction near the target from 1200 to 600 G leads to a rise in the discharge voltage by 25–30% and increases the deposition rate more than twofold. The deposited films offer high electrophysical parameters, as demonstrated with a high-frequency circuit: the intrinsic Q factor of the circuit at 64.5 MHz is found to be 2.7 × 10⁵.     

双离子束溅射沉积HfO­­2光学薄膜的研究

 用双离子束溅射沉积氧化铪光学薄膜，并对此工艺下制备的氧化铪薄膜进行了光学性质、残余应力、结构特性以及激光损伤特性的研究。实验结果表明，用双离子束溅射沉积的氧化铪薄膜不仅结构均匀,膜层致密,无定形结构，而且具有极低的散射和吸收,均匀的非晶结构,杂质缺陷少,激光损伤阈值高。     

Irreversible deposition of extended objects with diffusional relaxation on discrete substrates

Random sequential adsorption with diffusional relaxation of extended objects both on a one-dimensional and planar triangular lattice is studied numerically by means of Monte Carlo simulations. We focus our attention on the behavior of the coverage θ(t) as a function of time. Our results indicate that the lattice dimensionality plays an important role in the present model. For deposition of k-mers on 1D lattice with diffusional relaxation, we found that the growth of the coverage θ(t) above the jamming limit to the closest packing limit θ_CPL is described by the pattern θ_CPL-θ(t) ∝E_β[-(t/τ)^β], where E_β denotes the Mittag-Leffler function of order β∈(0,1). In the case of deposition of extended lattice shapes in 2D, we found that after the initial “jamming", a stretched exponential growth of the coverage θ(t) towards the closest packing limit θ_CPL occurs, i.e., θ_CPL - θ(t) ∝exp [-(t/τ)^β]. For both cases we observe that: (i) dependence of the relaxation time τ on the diffusion probability P_dif is consistent with a simple power-law, i.e., τ∝P_dif ^-δ; (ii) parameter β depends on the object size in 1D and on the particle shape in 2D.     

Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition

We report the possibility of autocatalytic synthesis of highly crystalline perfect CdTe nanowires by magnetron presputtering deposition through the windows in ultrathin layers of SiO₂. The photoluminescence spectra of obtained CdTe nanowires exhibit an emission band in the 1.4–1.7 eV region, indicating crystalline perfection of the nanowires.