Modification of surface properties of polypropylene (PP) film using DC glow discharge air plasma

The industrial use of polypropylene (PP) films is limited because of undesirable properties such as poor adhesion and printability. In the present study, a DC glow discharge plasma has been used to improve the surface properties of PP films and make it useful for technical applications. The change in hydrophilicity of modified PP film surface was investigated by contact angle (CA) and surface energy measurements as a function of exposure time. In addition, plasma-treated PP films have been subjected to an ageing process to determine the durability of the plasma treatment. Changes in morphological and chemical composition of PP films were analyzed by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The improvement in adhesion was studied by measuring T-peel and lap shear strength. The results show that the surface hydrophilicity has been improved due to the increase in the roughness and the introduction of oxygen-containing polar groups. The AFM observation on PP film shows that the roughness of the surface increased due to plasma treatment. Analysis of chemical binding states and surface chemical composition by XPS showed an increase in the formation of polar functional groups and the concentration of oxygen content on the plasma-processed PP film surfaces. T-peel and lap shear test for adhesion strength measurement showed that the adhesion strength of the plasma-modified PP films increased compared with untreated films surface.     

Enhanced corrosion resistance of Zr coating on biomedical TiNi alloy prepared by plasma immersion ion implantation and deposition

Zirconium film was prepared on TiNi alloy by plasma immersion ion implantation and deposition (PIIID) technique to enhance its corrosion resistance and prolong its working lifetime. The atomic force microscopy (AFM) results show that the film was relatively smooth with the root mean square roughness being 9.166 nm. The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results indicate that the implant element of Zr was oxidation partialness. The potentiodynamic polarization measurements in the Hank's solution at 37 °C show that the corrosion resistance of the alloy was improved by the Zr coating film and the atomic absorption spectrometry (AAS) tests also indicate that Ni ion concentration released from the substrate in the Hank's solution after the polarization test was reduced greatly, in comparison to the unmodified TiNi alloy sample.     

Synthesis of nano-sized antimony-doped tin oxide (ATO) particles using a DC arc plasma jet

Nano-sized antimony-doped tin oxide (ATO) particles were synthesized using DC arc plasma jet. The precursors SnCl₄ and SbCl₅ were injected into the plasma flame in the vapor phase. ATO powder could conveniently be synthesized without any other post-treatment in this study. To control the doping amount of antimony in the ATO particles, the Sb/Sn molar ratio was used as an operating variable. To study the effect of carrier gas on the particle size, argon and oxygen gases were used. The results of XRD and TGA show that all Sb ions penetrated the SnO₂ lattice to substitute Sn ions. With the increased SbCl₅ concentration in source material, the Sb doping level was also increased. The size of the particles synthesized using the argon carrier gas was much smaller than that of the particles prepared using the oxygen carrier gas. For the argon gas, PSA results and SEM images reveal that the average particle size was 19 nm. However, for the oxygen gas, the average particle size was 31 nm.     

Synthesis of nanocrystalline magnesium nitride (Mg3N2) powder using thermal plasma

Nanocrystalline magnesium nitride (Mg₃N₂) powder was synthesized from bulk magnesium by thermal plasma at atmospheric pressure. Magnesium vapor was generated through heating the bulk magnesium by DC plasma jet and reacted with ammonia gas. Injecting position and flow rates of ammonia gas were controlled to investigate an ideal condition for Mg₃N₂ synthesis. The synthesized Mg₃N₂ was cooled and collected on the chamber wall. Characteristics of the synthesized powders for each experimental condition were analyzed by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and thermogravity analysis (TGA). In absence of NH₃, magnesium metal powder was formed. The synthesis with NH₃ injection in low temperature region resulted in a formation of crystalline magnesium nitride with trigonal morphology, whereas the mixture of magnesium metal and amorphous Mg₃N₂ was formed when NH₃ was injected in high temperature region. Also, vaporization process of magnesium was discussed.     

Study on bacteria adherence properties of Mo surface-modified layer in Ti6Al4V alloy prepared by plasma surface alloying technique

Mo surface-modified layer in Ti₆Al₄V alloy was prepared using plasma surface alloying technique. Microstructure of the modified layer was analyzed using X-ray photoelectron spectroscopy (XPS), rough-meter and GDA750 glow discharge optical emission spectrometer. Phase composition of the Mo surface-modified layer was characterized by D/max 2500 X-ray diffraction. Results show that the Mo surface-modified layers consist of pure Mo surface layer with 〈1 1 0〉 and 〈2 1 1〉 orientations and diffusion layer. Mo 3d, O 1s, C 1s and Ti 2p, O 1s, C 1s XPS spectra are recorded at topsurface in the Mo-modified layer and titanium substrate respectively. Because of the different roughness and microstructure, the Mo surface-modified layer can to some extent inhibit bacteria adherence.     

Short-time plasma surface modification of HDPE powder in a Plasma Downer Reactor - process, wettability improvement and ageing effects

The effectiveness of improving the wettability of HDPE powders within less than 0.1 s by plasma surface modification in a Plasma Downer Reactor is investigated. A correlation is revealed between the XPS results (O/C-ratio) and the wettability (contact angle, polar surface tension by capillary rise method). The O₂-content in the plasma feed gas has been adjusted for best wettability properties. XPS results indicate the formation of CO and COOH functional groups on the powder surface. The O/C-ratio increased from 0.0 (no oxygen on the non-treated powder) up to 0.15 for the plasma treated HDPE powder surface. With pure O₂-plasma treatment, a water contact angle reduction from >90° (no water penetration into the untreated PE powder) down to 65° was achieved. The total surface free energy increased from 31.2 to 45 mN/m. Ageing of treated powders occurs and proceeds mostly within the first 7 days of storage. Contact angle measurements and O1s/O2s intensity ratio data support that ageing is mainly a diffusion-controlled process. Nevertheless, XPS results show the presence of oxygen functional groups even after 40 days, which explains why the powder is still dispersible in water without any addition of surfactants.     

Self-assembly of silanated poly(ethylene glycol) on silicon and glass surfaces for improved haemocompatibility

Surface immobilization of poly(ethylene glycol) (PEG) is an effective method to produce a material surface with protein repulsive property. This property could be made permanent by using covalent grafting of the PEG molecules onto material surfaces. In this study, self-assembled monolayers (SAMs) of PEG on silicon-containing materials (silicon chip and glassplate) were obtained through a one-step coating procedure of one kind of silanated PEG molecules made through the reaction between monomethoxy PEG and 3-isocyanatopropyltriethoxysilane. Atomic force microscopy (AFM) and water static contact angle measurement were employed to investigate the surface topography and wettability of the PEGylated material surfaces. The changes in the topography and the water contact angle of the surfaces with time of incubation in PBS solution were also measured. The results revealed that stable and uniform self-assembled monolayers of PEG could be formed on silicon or glass surfaces by simply soaking the substrates in the solution of silanated PEGs. The covalent coupling of PEGs to the substrates was also confirmed. In order to evaluate the stability of the SAMs, blood compatibility of the modified glassplate surface was evaluated by measuring full blood activated partial thromboplastin time (APTT), prothrombin time (PT), and thrombin time (TT), as well as by scanning electron microscopy (SEM) analysis of the appearance of adherence and denaturation of blood platelets onto the glassplate. The silanated PEGs were shown to have good effect on the protein-repulsion as well as haemocompatibility of the substrates.     

Chitin-humic acid hybrid as adsorbent for Cr(III) in effluent of tannery wastewater treatment

Adsorption of Cr(III) from both synthetic and real samples of tannery wastewater treatment's effluent on chitin-humic acid (chitin-HA) hybrid has been carried out. Rate constant and capacity of adsorption of Cr(III) from the synthetic sample were investigated and removal of Cr(III) from the real sample was tested at optimum medium acidity equivalent to pH 3.5. Characterization using Fourier transform infra red (FT-IR) spectroscopy revealed that both COO⁻ and N-acetyl originated from respectively humic acid (HA) and chitin were involved on the adsorption of Cr(III), and hence the Freundlich's multilayer and multi-energy adsorption model was more applicable to treat the adsorption data than the Langmuir's monolayer and mono-energy model. The quantification of adsorption capacity and rate constant using Freundlich isotherm model and first order adsorption reaching equilibrium yielded values of 6.84 × 10⁻⁴ mol g⁻¹ (35.57 mg g⁻¹) and 1.70 × 10⁻² min⁻¹, respectively. Removal test for the real wastewater treatment's effluent showed that the maximum amount of Cr(III) could be removed by 1 g of chitin-HA hybrid was 2.08 × 10⁻⁴ mol or equivalent to 10.82 mg.     

Effect of H2 and O2 plasma etching treatment on the surface of diamond-like carbon thin film

In this study, we investigated the surface properties of diamond-like carbon (DLC) films for biomedical applications through plasma etching treatment using oxygen (O₂) and hydrogen (H₂) gas. The synthesis and post-plasma etching treatment of DLC films were carried out by 13.56 MHz RF plasma enhanced chemical vapor deposition (PECVD) system. In order to characterize the surface of DLC films, they were etched to a thickness of approximately 100 nm and were compared with an as-deposited DLC film. We obtained the optimum condition through power variation, at which the etching rate by H₂ and O₂ was 30 and 80 nm/min, respectively. The structural and chemical properties of these thin films after the plasma etching treatment were evaluated by Raman and Fourier transform infrared (FT-IR) spectroscopy. In the case of as-deposited and H₂ plasma etching-treated DLC film, the contact angle was 86.4° and 83.7°, respectively, whereas it was reduced to 35.5° in the etching-treated DLC film in O₂ plasma. The surface roughness of plasma etching-treated DLC with H₂ or O₂ was maintained smooth at 0.1 nm. These results indicated that the surface of the etching-treated DLC film in O₂ plasma was hydrophilic as well as smooth.     

MFM and Raman studies in PEMBE-grown (Ga,Mn)N thin films showing room-temperature ferromagnetism

We present the room-temperature ferromagnetism in the (Ga,Mn)N films grown on n-type GaN templates by plasma-enhanced molecular beam epitaxy for semiconductor spintronic device applications. Despite of the possible interface effects between the (Ga,Mn)N layers and n-type GaN templates, the (Ga,Mn)N films were found to exhibit the ferromagnetic ordering above room temperature. The magnetic force microscopy identified the magnetic domains with the different magnetic orientations at room temperature, indicating the existence of the ferromagnetic long-range ordering. In Raman spectra, an additional peak at 578 cm⁻¹ was observed, which is attributed to the local vibration of substitutional Mn in the (Ga,Mn)N lattice. Therefore, it is believed that the ferromagnetic ordering in (Ga,Mn)N is due to the carrier-mediated Ruderman-Kittle-Kasuya-Yosida interaction.     

The use of symmetry in the search for canted ferromagnetism, its application to the molecular magnets Mn[N(CN)2]2 and Fe[N(CN)2]2

Canted ferromagnets present a important class of molecular magnets. In these materials the uncompensated magnetisation, created by the DzyaloshinskyMoriya interaction, has the particular property of being compatible with the symmetry of the underlying antiferromagnetic Hamiltonian. If the ordering transition is continuous, Landau theory and simple symmetry arguments about the crystal structure can be used to determine whether such parasitic ferromagnetism is possible, and therefore to aid the systematic search for new molecular ferromagnets.     

Modification of wetting of copper (Cu) on carbon (C) by plasma treatment and molybdenum (Mo) interlayers

Manipulating wetting and adhesion between the chemically immiscible elements Cu and C is of high interest for the production of C-fiber reinforced Cu-C metal matrix composites (MMC's) which are potential materials for high performance heat sinks.This work presents two approaches to adhesion manipulation: (i) the activation of the C-surface by a treatment in nitrogen (N₂) radio frequency (RF) plasma and (ii) the deposition of a Mo-interlayer on the C-surface.Both approaches yield a significant increase in adhesion for Cu-coatings deposited immediately after pre treatment. Heat treatment (30 min, 800 °C, high vacuum furnace) leads to a drastic loss in adhesion for the plasma treated samples while the samples containing the Mo-interlayer retain excellent adhesion values.Results of thermal cycling experiments (RT—500 °C) combined with in situ X-ray diffraction (XRD) measurements show a similar picture. The Cu-coating on the plasma treated sample delaminates after one cycle. The sample with the Mo-interlayer can go through several cycles and is able to sustain thermally induced stresses.The difference in the response of the two sample types to post deposition thermal treatment can be tracked back to the de-wetting behavior of Cu on the different substrates. Void formation is observed at the Cu-C interface in the case of plasma treatment but not for samples with a Mo-interlayer.     

Microstructural and surface property variations due to the amorphous region formed by thermal annealing in Al-doped ZnO thin films grown on n-Si (1 0 0) substrates

X-ray diffraction (XRD) patterns revealed that the as-grown and annealed Al-doped ZnO (AZO) films grown on the n-Si (1 0 0) substrates were polycrystalline. Transmission electron microscopy (TEM) images showed that bright-contrast regions existed in the grain boundary, and high-resolution TEM (HRTEM) images showed that the bright-contrast regions with an amorphous phase were embedded in the ZnO grains. While the surface roughness of the AZO film annealed at 800 °C became smoother, those of the AZO films annealed at 900 and 1000 °C became rougher. XRD patterns, TEM images, selected-area electron diffraction patterns, HRTEM images, and atomic force microscopy (AFM) images showed that the crystallinity in the AZO thin films grown on the n-Si (1 0 0) substrates was enhanced resulting from the release in the strain energy for the AZO thin films due to thermal annealing at 800 °C. XRD patterns and AFM images show that the crystallinity of the AZO thin films annealed at 1000 °C deteriorated due to the formation of the amorphous phase in the ZnO thin films.     

Effects of (NH4)2Sx treatment on surface work function and roughness of indium-tin-oxide

In this study, the effects of an (NH₄)₂S_x treatment on the surface work function (SWF) and roughness of indium-tin-oxide (ITO) have been investigated. From the observed X-ray photoelectron spectroscopy results, optical transmittance measurements, atomic force microscopy measurements and four-point probe measurements, it is suggested that the surface chemical changes and an increase in the sheet resistance had strong effects on the SWF of ITO. We find that the S occupation of oxygen vacancies near the ITO surface after (NH₄)₂S_x treatment may result in a marked increase in the SWF and a slight increase in the surface roughness.     

Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment

We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH₄)₂S_x treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH₄)₂S_x treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH₄)₂S_x-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.     

Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.     

Selective surface chemistry of allyl alcohol and allyl aldehyde on Si(1 0 0)2×1: Competition of [2 + 2] CC cycloaddition with O-H dissociation and with [2 + 2] CO cycloaddition in bifunctional molecules

Competition between the CC functional group with the OH group in allyl alcohol and with the CO group in allyl aldehyde in the adsorption and thermal chemistry on Si(1 0 0)2×1 has been studied by X-ray photoelectron spectroscopy (XPS) and temperature-programmed desorption (TPD), as well as density-functional theory (DFT) calculations. The similarities found in the C 1s and O 1s spectra for both molecules indicate that the O-H dissociation product for allyl alcohol and [2 + 2] CO cycloaddition product for allyl aldehyde are preferred over the corresponding [2 + 2] CC cycloaddition products. Temperature-dependent XPS and TPD studies further show that thermal evolution of these molecules gives rise to the formation of ethylene, acetylene, and propene on Si(1 0 0)2×1, with additional CO evolution only from allyl alcohol. The formation of these desorption products also supports that the [2 + 2] CC cycloaddition reaction does not occur. In addition, the formation of SiC at 1090 K is observed for both allyl alcohol and allyl aldehyde. We propose plausible surface-mediated reaction pathways for the formation of these thermal evolution products. The present work illustrates the crucial role of the Si(1 0 0)2×1 surface in selective reactions of the Si dimers with the O−H group in allyl alcohol and with the CO group in allyl aldehyde over the CC functional group common to both molecules.     

Etching and forward transfer of fused silica in solid-phase by femtosecond laser-induced solid etching (LISE)

We present a femtosecond laser-based technique for etching and forward transfer of bulk transparent materials in solid-phase. Femtosecond laser pulses with were focused through a fused silica block onto an absorbing thin film of Cr. A constraining Si wafer was pressed into tight contact with the Cr film to prevent lift-off of the film. A combination of the high temperature and pressure of the Cr, and compressive stress from the Si, resulted in etching of smooth features from the fused silica by cracking. Unlike in conventional ablative or chemical etching, the silica was removed from the bulk as single solid-phase pieces which could be collected on the Si. Using this so-called laser-induced solid etching (LISE) technique, 1-2 m deep pits and channels have been produced in the silica surface, and corresponding dots and lines deposited on the Si. The threshold fluence for etching was found to be with duration pulses. The morphology of the etched features are investigated as functions of fluence and exposure to multiple pulses.     

Luminescent properties of KGd1−x(WO4)2:Eux and KGd1−x(WO4)2−y(MoO4)y:Eux phosphors in UV-VUV regions

KGd_1−x(WO₄)_2−y(MoO₄)_y:Eu³⁺_x(0.1?x?0.75, y=0 and 0.2) phosphors are synthesized through traditional solid-state reaction and their luminescent properties in ultraviolet (UV) and vacuum ultraviolet (VUV) regions are investigated. Under 147 nm excitation, these phosphors show characteristic red emission with good color purity. In order to improve their emission intensity, the MoO₄²⁻ (20 wt%) is introduced into the anion of KGd_1−x(WO₄):Eu³⁺_x. The Mo⁶⁺ and Eu³⁺ co-doped KGd(WO₄)₂ phosphors show higher emission intensity in comparison with the singly Eu³⁺-doped KGd(WO₄)₂ in VUV region. The chromaticity coordination of KGd_0.45(WO₄):Eu³⁺_0.55 is (x=0.669, y=0.331), while that of KGd_0.45(WO₄)_1.8(MoO₄)_0.2:Eu³⁺_0.55 is (x=0.666, y=0.334) in VUV region.