Infrared radiation of zinc selenide single crystals

Long-wave photoluminescence (PL) spectra of both as-grown and Au-doped n-ZnSe single crystals are studied in the temperature range from 81 to 300 K. A narrow band of infrared (IR) radiation centered at 878 nm (1.411 eV) manifests itself in the low-temperature PL spectrum. It is established that this band intensity first increases and then decreases with increasing concentration of doping impurity. With increasing excitation radiation intensity, spectral position of the IR PL band is unchanged and its intensity increases under the linear law. With increasing excitation radiation wavelength, the IR PL band intensity increases, it becomes narrower and shifts towards long wavelengths. It is shown that the observed IR radiation is caused by recombination of free electrons with holes localized on associative acceptors in the ZnSe:Zn:Au crystals or in the undoped crystals.     

Three-photon upconversion luminescence phenomenon for the green levels in Er/Yb codoped cubic nanocrystalline yttria

In this paper, we observed that in Er³⁺/Yb³⁺ codoped nanocrystals (NC), with the decreasing particle size and the increasing Yb³⁺ concentration, the upconversion luminescence (UCL) of the red emissions of gradually increased, while the green emissions of gradually diminished under 980 nm diode laser excitation. In NC with lower Yb³⁺ concentration, both the red and green emissions result from a two-photon excitation. In NC with higher Yb³⁺ concentration, the red emissions result from a two-photon excitation, while the green emissions dominantly result from a three-photon excitation. A model was provided for explaining the above UCL phenomena.     

Dependence of photoluminescence from a-Si nanoparticles on the annealing time and exciting wavelength

Thin films of SiO_x having thickness of 0.2 μm and oxygen content x=1.5 or 1.7 are prepared by thermal evaporation of SiO in vacuum. Then some samples are furnace annealed for various times (in the range ) at 770 and 970 K and some others are rapid thermal annealed at 970 K for 30 and 60 s. Photoluminescence (PL) measurements are carried out at room temperature using the 442 nm line of a He-Cd laser and the 488 nm of an Ar laser for excitation. The effect of the annealing conditions and wavelength of the exciting light on the shape of the PL from these films is explored. The deconvolution of the PL spectra measured with the 442 nm line from samples annealed at 770 K for reveals two distinct PL bands peaked at around 2.3 and 2.5 eV, which do not shift appreciably with increasing annealing time. In addition, at longer annealing times, a weak third band is resolved centred in the range 2.0-2.1 eV. It exists in the spectra of all samples annealed at 970 K being more prominent in the samples with x=1.5. The intensity of this band shows different dependences on the annealing time in the films with different initial composition. The results obtained are discussed in terms of radiative recombination via defect states in the SiO_x matrix (the 2.5 eV band) or at the a-Si-SiO_x interface (the 2.3 eV band). The band centred in the 2.0-2.1 eV range is related to recombination in amorphous silicon nanoparticles grown upon annealing.     

Real-time monitoring of InAs QD growth procedure on InP substrate by spectral reflectance

Using an in situ spectral reflectance (SR) method, we monitored the growth procedure of InAs QD layer on InP substrate grown by low-pressure metalorganic chemical vapor deposition. The surface reconstruction of the InP buffer layer at 530 °C under P-rich condition was determined by the subtraction SR and explained to be (2 × 4)-like structures composed of the P-dimers and [1 1 0] In-dimers. The [1 1 0] and SR signals at different wavelengths showed different behaviors, which was interpreted to be caused by As/P exchange reaction and the other diverse surface processes. This analysis was confirmed by the comparison between SR signal and multibeam optical stress sensor data.     

4-benzyl pyridinium dihydrogenmonophosphate C6H5CH2C5H4NHH2PO4 : Single-crystal structure and its conductivity in polycrystalline form

The salt 4-benzyl pyridinium dihydrogenmonophosphate is monoclinic P2₁/c with the following unit cell dimensions: ; ; ; and β=97.328(11). Also, , D_x=1.403, , F(000)=560; ; and R=0.0495 and R_w=0.0964 for 3733 independent reflections. The structure consists of infinite parallel two-dimensional planes built of H₂PO₄⁻ anions and C₆H₅CH₂C₅H₄NH⁺ cations mutually connected by strong O-H ?O and N-H ?O hydrogen bonding. There are no contacts other than the normal Van der Waals interactions between the layers. The conductivity relaxation parameters associated with some H⁺ conduction have been determined from an analysis of the spectrum measured in a wide temperature range.     

Photoluminescence studies in sol-gel derived Zno films

The photoluminescence (PL) properties of high quality ZnO thin films grown on Si (1 0 0) substrates using spin coating technique are investigated as a function of temperature in the range 10-300 K. The PL spectra shows dominant donor bound excitonic emission along with free exciton related emission in the UV region. The corresponding activation energy of thermal quenching is found to be . The parameters that describe the temperature dependent red shift of the band-edge transition energy are evaluated using different models. The broadening of the PL peak due to increase in temperature is mainly attributed to the exciton-LO phonon coupling.     

Fe monolayers on InAs(0 0 1): An in situ study of surface, interface and volume magnetic anisotropy

The magnetic anisotropy of epitaxial Fe films with thicknesses in the range of 2-142 monolayers (ML) grown on {4×2} reconstructed InAs(0 0 1) was investigated by in situ ferromagnetic resonance. The easy magnetization direction was found to be parallel to the -direction for Fe films below 4 ML, while it rotates by 45^° toward the -direction. It is observed that both surface-interface and volume contribution to the perpendicular anisotropy favor an easy axis perpendicular to the film plane. The cubic surface-interface anisotropy is relatively large with easy axes along -directions in contrast to the volume contribution which favors easy axes along the -directions. The volume contribution is found to be larger than the Fe bulk cubic anisotropy. A thickness independent uniaxial anisotropy has been found in films with a thickness of 2 up to 142 ML.     

Microstructure of epitaxial scandium nitride films grown on silicon

Epitaxial scandium nitride films (225 nm thick) were grown on (1 1 1)-oriented silicon substrates by molecular beam epitaxy (MBE), using ammonia as a reactive nitrogen source. Film microstructure was investigated using X-ray diffraction (XRD). The (1 1 1) ω-scan FWHM of 0.551° obtained for films grown at 850 °C is the lowest reported so far for ScN thin films. The principal orientation of ScN with respect to Si is (1 1 1)_ScN//(1 1 1)_Si and []_ScN//[]_Si, representing a 60° in-plane rotation of the ScN layer with respect to the Si substrate. However, some twinning is also present in the films; the orientation of the twinned component is (1 1 1)_ScN//(1 1 1)_Si and []_ScN//[]_Si, representing a ‘cube-on-cube’ orientation. The volume percentage of these twins in the films decreases with increasing film growth temperature.     

The second hyperpolarizability of CdTe nanocrystals using polarization-resolved degenerate four-wave mixing

Polarization-resolved forward degenerate four-wave mixing (DFWM) in a nonresonant region revealed the effective third-order nonlinear susceptibility of colloidal CdTe nanocrystals (NCs) with the size near the Bohr radius and various concentrations. The second hyperpolarizabilities, and , of the CdTe NCs were ∼1.15 × 10⁻⁴¹ m⁵/V² and ∼3.01 × 10⁻⁴² m⁵/V² from the measurement of the concentration-dependent third-order nonlinear susceptibility of CdTe NCs, respectively. The ratio (/) of the hyperpolarizabilities was ∼0.26, which indicated a large contribution of an electronic polarization process to the third-order nonlinearity of CdTe NCs.     

Surface phase diagram and temperature induced phase transitions of Sn/Cu(1 0 0)

Room temperature deposition of Sn on Cu(1 0 0) gives rise to a rich variety of surface reconstructions in the submonolayer coverage range. In this work, we report a detailed investigation on the phases appearing and their temperature stability range by using low-energy electron diffraction and surface X-ray diffraction. Previously reported reconstructions in the submonolayer range are p(2 × 2) (for 0.2 ML), p(2 × 6) (for 0.33 ML), ()R45° (for 0.5 ML), and c(4 × 4) (for 0.65 ML). We find a new phase with a structure for a coverage of 0.45 ML. Furthermore, we analyze the temperature stability of all phases. We find that two phases exhibit a temperature induced reversible phase transition: the ()R45° phase becomes ()R45° phase above 360 K, and the new phase becomes p(2 × 2) also above 360 K. The origin of these two-phase transitions is discussed.     

Modelling of phase transitions and reaction at CO adsorption on oxygen precovered Pd(1 1 1)

Using the interaction parameters up to the third neighbors and activated form of O and CO diffusion and their reaction, the model has been proposed for Monte-Carlo simulations describing the catalytic O + CO → CO₂ reaction and occurring phase transitions on Pd(1 1 1) surface. Upon adsorption of CO the pre-adsorbed oxygen transforms from p(2 × 2)_O phase into and phases in the limit of room and moderate temperatures, respectively. We demonstrate that the kinetic effects determine both the occurrence of the p(2 × 1)_O and disappearance of the phases at moderate and low temperatures, respectively. Using reaction rate as a fit parameter, we show that at room temperature the start of the reaction can be synchronized with the occurrence of phase.     

MRCI studies on the electronic structure of AlN and AlN, and the electron affinity of AlN

Using multireference configuration-interaction methods and double to triple-zeta basis sets with semidiffuse and polarization functions, potential energies and spectroscopic constants for low-lying doublet, and quartet states of AlN⁻ were calculated. has R_e=3.280 bohr and . lies 0.17 eV above the ground state. Using an estimated electron affinity of 2.1 eV for AlN, four states of AlN⁻ are found to be stable, namely , , , and . Comparisons with the isovalent anions BN⁻ (three stable states) and AlP⁻ (seven stable states) are made. Photo-detachment of an electron from the state of AlN⁻ can lead to an accurate determination of the energy difference between the two close-lying lowest states of AlN, and , predicted here to be 0.09 eV apart.     

First-principles study on the electronic structures and absorption spectra for the PbWO4 crystal with lead vacancy

The electronic structures and absorption spectra for the perfect PbWO₄ (PWO) crystal and the crystal containing lead vacancy have been calculated using density functional theory code CASTEP with the lattice structure optimized. The calculated absorption spectra of the PWO crystal containing exhibit seven absorption bands peaking at 1.72 eV (720 nm), 2.16 eV (570 nm), 2.81 eV (440 nm), 3.01 eV (410 nm), 3.36 eV (365 nm), 3.70 eV (335 nm) and 4.0 eV (310 nm), which are very close to the experimental values. It predicts that the 330, 360, 420, 500-750 nm absorption bands are related to the existence of in the PWO crystal.     

Chemical composition and phase identification of sodium titanate nanostructures grown from titania by hydrothermal processing

Fine titanium dioxide particles were hydrothermally treated in a sodium hydroxide aqueous solution. The treatment extended from 1 to 6 days leading to belt-like and wire-like structures of a metastable phase of sodium titanate, with typical widths and diameters between 8 and 40 nm, and lengths from 100 nm to several micrometers. These conclusions are supported by X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy and high resolution transmission electron microscopy. The latter method revealed two set of space fringes with characteristic distances of 0.29 and 0.34 nm. These distances could correspond to the lattice spacing of and planes in Na₂Ti₆O₁₃ compounds. The nanomaterial was found to be stable up to temperatures as high as 200 or depending on the reaction time and the concentration.