The interaction of H2S with Si(111) 7 × 7 surfaces by energy loss and Auger electron spectroscopies

Low energy electron loss spectroscopy (ELS) and Auger electron spectroscopy (AES) have been applied for the studies of the interaction of H₂S molecules with Si(111)7 × 7 surfaces. The observations are consistent with the interpretation that the room temperature non-dissociative adsorption state of H₂S molecules changes substantially after annealing at 550°C, resulting in the desorption of hydrogen and the covalent bond formation between silicon and sulfur atoms. The silicon disulfide films formed on Si(111) surfaces have been identified by the characteristic loss peaks in comparison with those of silicon dioxide.     

Si(111)表面吸附氢会形成双氢化相吗?

用热脱附谱研究了原子氢在Si(111)表面的吸附,得到了两个吸附状态。从脱附谱特性同Si(100)/H系统的相似性,可以推测氢在Si(111)表面也存在单氢化相和双氢化相两种状态。单氢化相主要是顶位吸附所形成的,而双氢化相的形成则可以用McRae所提出的Si(111)(7×7)表面原子结构的三角形二聚物层错模型来解释。 关键词：     

Laser irradiation of chemisorbed oxygen on Si(111): Electronic states and clump formation of SiO2

The laser annealed Si(111) 1×1 surface with chemisorbed oxygen at submonolayer coverages and its irradiation with a ruby laser has been studied with ultraviolet photoelectron spectroscopy and high-resolution electron-energy-loss spectroscopy. The surface oxide which forms directly upon O₂ exposure is found to be similar to that which forms on the Si(111) cleaved 2×1 and the 7×7 reconstructed surfaces. Ruby-laser irradiation converts this surface oxide at submonolayer coverages into clumps of silicon dioxide and regions of clean silicon. Both surface oxides show electronic transitions in the visible and ultraviolet energy region which may be related to known network and point defects in vitreous and crystalline silicon dioxide.     

Angle-resolved photoemission study of CoSi2 nanofilms grown on Si(111) substrates

We have carried out an angle-resolved photoemission study for CoSi₂ nanofilms grown on the Si(111)-7×7 substrates. The surface of CoSi₂(111) nanofilm changes from the bulk-truncated surface to the surface with additional Si-bilayer by annealing at higher temperature above 825 K. The angle-resolved photoemission spectra of the CoSi₂ nanofilm annealed at 853 K show the spectral features originated from the surface resonance state on the CoSi₂ surface terminated by Si-bilayer. From the detailed photoemission study, we discuss the surface electronic structure in CoSi₂(111) nanofilms grown on Si(111) substrates.     

Rectification behaviour of molecular layers on Si(111)

Reproducible and strong diode-like behaviour is observed for molecular films of 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) on n-type Si(111)- 7×7 surfaces studied by scanning tunnelling microscopy (STM) and spectroscopy (STS) at 77 K. The mechanism behind the rectification is likely to be related to the electron distribution at the molecule-silicon interface. We suggest that the adsorption of the molecular layer profoundly modifies the electronic structure of the Si(111)- 7×7 surface.     

An ab initio-based approach to adsorption-desorption behavior of Si adatoms on GaAs(1 1 1)A-(2 × 2) surfaces

The adsorption-desorption behavior of Si adatoms on GaAs(1 1 1)A-(2 × 2) surfaces is investigated using our ab initio-based approach, in which adsorption and desorption behavior of Si adatoms is described by comparing the calculated desorption energy obtained by total-energy electronic-structure calculations with the chemical potential estimated by quantum statistical mechanics. We find that the Si adsorption at the Ga-vacancy site on the (2 × 2) surfaces with As adatoms occurs less than 1140-1590 K while the adsorption without As adatom does less than 630-900 K. The change in adsorption temperature of Si adatoms by As adatoms is due to self-surfactant effects of As adatoms: the promotion of the Si adsorption triggered by As adatoms is found to be interpreted in terms of the band-energy stabilization. Furthermore, the stable temperature range for Si adsorbed surfaces with As adatoms agrees with the experimental results. The obtained results provide a firm theoretical framework to clarify n-type doping processes during GaAs epitaxial growth.     

Interaction of atomic hydrogen with the Si(100)2×1 surface

The interaction of atomic hydrogen with the Si(100)2×1 surface has been investigated in detail by a field ion-scanning tunneling microscope (FI-STM). At low exposure, hydrogen atoms reside singly on top of the dimerised Si atoms, and are imaged brightly. The hydrogen chemisorption induces the buckling of dimers, indicating the strong bonding between Si and hydrogen atoms. The adsorption geometry changed from the (2×1) monohydride phase to the (1×1) dihydride phase with increasing exposure of hydrogen. The former is imaged dark compared with the unreacted Si dimers due to the reduction of the density of electronic states near the Fermi level. Surface etching was also observed during the formation of the dihydride phase. The behavior of hydrogen desorption from the H-saturated Si(100) surface was investigated as a function of annealing temperatures. Our STM results suggest that the desorbing H₂ molecules are formed by two hydrogen atoms on the same dihydride species.     

Hydrogen adsorption and surface structures of silicon

The adsorption of atomic hydrogen on silicon (111)2 × 1 cleaved, (111) 7 × 7, and (100) 2 × 1 surfaces has been studied by using electron energy loss spectrscopy (ELS) and Photoemission spectroscopy (UPS). On all surfaces the hydrogen removes the “dangling bond” surface state and a new peak in the density of states at lower energies corresponding to the SiH bond is found. The LEED pattern of the equilibrium surfaces (111) 7 × 7 and (100) 2 × 1 is not altered by hydrogen adsorption, while on the cleaved (111) 2 × 1 surface the fractional order spots are extinguished. The Haneman surface-buckling model therefore provides an explanation for the surface reconstruction of the cleaved (111) 2 × 1 surfaces. For the equilibrium surfaces, (111) 7 × 7 and the (100) 2 × 1, the data are consistent with the Lander-Phillips model.     

Hydrogen vibrations on Si (111)

High resolution electron energy loss spectra are reported for atomic hydrogen and deuterium adsorption on the Si (111) 7x7 surface. The experiments were carried out for various hydrogen exposures and different substrate temperatures. Clear evidence is given for the formation of SiH₂ and/or SiH₃ complexes in the early stages of adsorption. Strong indications are also obtained for the removal of adsorbed hydrogen probably via the formation and desorption of silane during hydrogen exposure.     

Preparation, IR spectroscopy, and time-of-flight mass spectrometry of halogenated and methylated Si(111)

The preparation of chlorine-, bromine-, and iodine-terminated silicon surfaces (Si(111):Cl, Br, and I) using atomically flat Si(111)-(1×1):H is described. The halogenated surfaces were obtained by photochemically induced radical substitution reactions with the corresponding dihalogen in a Schlenk tube by conventional inert gas chemistry. The nucleophilic substitution of the Si-Cl functionality with the Grignard reagent (CH₃MgCl) resulted in the unreconstructed methylated Si(111)-(1×1):CH₃ surface. The halogenated and methylated silicon surfaces were characterized by Fourier transform infrared (FTIR) spectroscopy and laser-induced desorption of monolayers (LIDOM). Calibration of the desorption temperature via analysis of time-of-flight (TOF) distributions as a function of laser fluence allowed the determination of the originally emitted neutral fragments by TOF mass spectrometry using electron-impact ionization. The halogens were desorbed atomically and as SiX _n (X = Cl, Br) clusters. The methyl groups mainly desorbed as methyl and ethyl fragments and a small amount of ⁺SiCH₃.     

Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

Using the morphological differences of low and high index surfaces as templates for metal growth, several low dimensional overlayer structures with novel structural and electronic properties can be formed. We present here a first report on submonolayer adsorption and residual thermal desorption studies of In adatoms on reconstructed high index Si (5 5 12)?2 × 1 surface and compare it with the observations on planar Si (111)?7 × 7 surface. The study is done by using in-situ Ultra High Vacuum surface sensitive probes like Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED). These conventional wide area techniques provide an understanding of atomistic issues involved in the evolution of the interface. We have observed an anomalous growth mode during adsorption at room temperature (RT) above 2ML, which includes adatom layering and clustering on Si (111) surface. This is also manifested during the desorption experiments on both surfaces, and the subtle differences on the two surfaces are discussed. The observation of LEED pattern during the adsorption process shows formation of different superstructural phases on Si (111)?7 × 7 surface. On Si (5 5 12) 2 × 1 surface we observe the sequential 2× (225), 2× (337) and 2× (113) facet formation during adsorption/desorption, which include quasi 1D-nanowire/chain structures. A combination of lattice strain effects, presence of step-edge barrier and quantum size effects are employed to speculate the differences in adsorption and desorption.     

Selenium adsorption on Cs-covered Si(100) 2×1 surfaces

This report involves the study of Se adsorption on caesiated Si(100) 2×1 surfaces in ultra high vacuum (UHV) using low energy electron diffraction, Auger electron spectroscopy, thermal desorption spectroscopy and work function measurements. Selenium atoms on Cs/Si(100) 2×1 surface adsorb initially on uncaesiated portions of Si and subsequently on the Cs overlayer. The presence of Se increases the binding energy of Cs on Si(100). For Cs and Se coverages above 0.5 ml CsSe and Cs_xSe_ySi_z, compound formation was observed. The coadsorption of Se and Cs induces a high degree of surface disorder, while desorption most probably causes surface etching. The presence of Cs on Si(100) 2×1 surfaces prevents the diffusion of Se into the Si substrate and greatly suppresses the formation of SiSe₂ and SiSe₃, detected when Se is adsorbed on clean Si(100) 2×1 surfaces.     

Potassium and potassium oxide monolayers on the platinum (111) and stepped (755) crystal surfaces: A LEED,AES, and TDS study

The adsorption of potassium and the coadsorption of potassium and oxygen on the Pt(111) and stepped Pt(755) crystal surfaces were studied by AES, LEED, and TDS. Pure potassium adlayers were found by LEED to be hexagonally ordered on Pt(111) at coverages of θ = _K0.9–;1. The monolayer coverage was 5.4 × 10¹⁴K atoms/cm² (0.36 times the atomic density of the Pt(111) surface). Orientational reordering of the adlayers, similar to the behavior of noble gas phase transitions on metals, was observed. The heat of desorption of K decreased, due to depolarization effects, from 60 kcal/mole at θ_K <0.1, to 25 kcal/mole at θ_K = 1 on both Pt(111) and Pt(755). Exposure to oxygen thermally stabilizes a potassium monolayer, increasing the heat of desorption from 25 to 50 kcal/mole. Both potassium and oxygen were found to desorb simultaneously indicating strong interactions in the adsorbed overlayer. LEED results on Pt(111) further indicate that a planar K₂O layer may be formed by annealing coadsorbed potassium and oxygen to 750 K.     

Methanol decomposition on platinum (111)

The interaction of methanol with clean and oxygen-covered Pt(111) surfaces has been examined with high resolution electron loss spectroscopy (EELS) and thermal desorption spectroscopy (TDS). On the clean Pt(111) surface, methanol dehydrogenated above 140 K to form adsorbed carbon monoxide and hydrogen. On a Pt(111)-p(2 × 2)O surface, methanol formed a methoxy species (CH₃O) and adsorbed water. The methoxy species was unstable above 170 K and decomposed to form adsorbed CO and hydrogen. Above room temperature, hydrogen and carbon monoxide desorbed near 360 and 470 K, respectively. The instability of methanol and methoxy groups on the Pt surface is in agreement with the dehydrogenation reaction observed on W, Ru, Pd and Ni surfaces at low pressures. This is in contrast with the higher stability of methoxy groups on silver and copper surfaces, where decomposition to formaldehyde and hydrogen occurs. The hypothesis is proposed that metals with low heats of adsorption of CO and H₂ (Ag, Cu) may selectively form formaldehyde via the methoxy intermediate, whereas other metals with high CO and H₂ chemisorption heats rapidly dehydrogenate methoxy species below room temperature.     

Adsorption and desorption of no from Rh{111} and Rh{331} surfaces

The adsorption and desorption chemistry of NO on the clean Rh{111} and Rh{331} single crystal surfaces was followed with SIMS, XPS, and LEED. Results suggest dissociative NO adsorption occurs at step and/or defect sites. At saturation coverage there was ～ 10 times more dissociated species on the Rh{331} surface at 300 K than on the Rh{111} surface. On both surfaces two molecular states of NO_ads have been identified as β₁, and β₂ which possess different chemical reactivity. Under the condition of saturation coverage the β₁ and β₂ states are populated on the Rh{111} surface in a different proportion than on the Rh{331} surface. Further, their population on both surfaces is coverage and temperature dependent. When the sample is heated to desorb the saturation overlayer formed on the Rh{111} and Rh{331} crystal surfaces, approximately 50% of the overlayer is found to desorb below ? 400 K primarily from the β₂ state, molecularly as NO(g). Between 300 and 400 K the β₁ state dissociates as binding sites necessary to coordinate N_ads and O_ads are freed by desorption of NO(g).     

Electronic excitations on clean and adsorbate-covered oxide surfaces

We have studied electronic excitations at the surfaces of NiO (100), Cr₂O₃(111), and Al₂O₃(111) thin films with Electron Energy Loss Spectroscopy (EELS). On NiO (100) we observe surface electronic excitations in the energy range of the band gap which shift upon adsorption of NO. Ab initio cluster calculations show that these excitations occur within the Ni ions at the oxide surface. The (111) surface of Cr₂O₃ is characterized by distinct excitations which are also strongly influenced by the interaction with adsorbates. Temperature-dependent measurements show that two different states of the surface exist which are separated by an activation energy of about 10 meV. For Al₂O₃(111) we present data for a CO adsorbate. The oxide is quite inert with respect to CO adsorption as indicated by desorption temperatures between 38 K and 67 K. Due to the weak interaction with the substrate the a³II valence excitation of CO shows a clearly detectable vibrational splitting which has not been observed previously for a CO adsorbate in the (sub)monolayer coverage range. For several different adsorption state the lifetimes of the a³II state could be estimated from the halfwidths of the loss peaks, yielding values between 10^–15 s for the most strongly bound species and 10^–14 s for the CO multilayer.     

Flash desorption and equilibration of H2 and D2 on single crystal surfaces of platinum

The adsorption and flash desorption of hydrogen and the equilibration of H₂ and D₂ has been studied on the (110), (211), (111) and (100) planes of platinum. Desorption from Pt (211), a stepped surface composed of (111) and (100) ledges, yields a desorption spectrum which apparently is a composite of desorption from the individual ledges. Pt (110) is quite similar to the tungsten structural analog, W (211), in that both yield two-peak desorption spectra, and on both planes adsorption kinetics are dramatically different for filling of the two states. On all four planes adsorption kinetics are apparently proportional to (1 ? θ)², and estimates of the initial sticking probabilities show them to decrease in the order: (110) > (211) > (100) > (111). Equilibration activity follows approximately the same order [(110) > (211) > (111) > (100)] with a factor of ~ 5 difference between the most and least active planes; no extraordinary activity is observed for the stepped surface, Pt(211). Below ~ 570 K equilibration of H₂ and D₂ is activated by less than 2 kcal/mole with the magnitude dependent on the specific face, and above this temperature the reaction is nonactivated. The non-activated case apparently results from absorption followed by statistical mixing on the surface. Calculated rates for HD production per cm² based on this model are in excellent agreement with the experimental values for Pt(110) and Pt(211), and in somewhat poorer agreement in the case of Pt (111) and Pt (100). This latter is probably due to the greater inaccuracy in the values of the sticking coefficients on these planes.     

Adsorption and coadsorption of carbon monoxide and hydrogen on Pd(111)

The adsorption and coadsorption of CO and H₂ have been studied by means of thermal desorption (TD) and electron stimulated desorption (ESD) at temperatures ranging from 250 to 400 K. Three CO TD states, labelled as β₂, β₁, and β₀ were detected after adsorption at 250 K. The population of β₂ and β₁ states which are the only ones observed upon adsorption at temperatures higher than 300 K was found to depend on adsorption temperature. The correlation between the binding states in the TD spectra and the ESD O⁺ and CO⁺ ions observed was discussed. Hydrogen is dissociatively adsorbed on Pd(111) and no ESD H⁺ signal was recorded following H₂ adsorption on a clean Pd surface. The presence of CO was found to cause an appearance of a H⁺ ESD signal, a decrease of hydrogen surface population and an arisement of a broad H₂ TD peak at about 450 K. An apparent influence of hydrogen on CO adsorption was detected at high hydrogen precoverages alone, leading to a decrease in the CO sticking coefficient and the relative population of CO β₂ state. The coadsorption results were interpreted assuming mutual interaction between CO and H at low and medium CO coverages, the “cooperative” species being responsible for the H⁺ ESD signal. Besides, the presence of CO was proved to favour hydrogen penetration into the bulk even at high CO coverage when H atoms were completely displaced from the surface.     

The adsorption of hydrogen on iron; A surface orbital modified occupancy — bond energy bond order calculation

A Surface Orbital Modified Occupancy — Bond Energy Bond Order (SOMO-BEBO) model calculation of hydrogen adsorption on iron is presented. This calculation represents a novel approach to the CFSO-BEBO method in that the calculation is correlated in a consistent way with the thermal desorption spectra of the hydrogen-iron system. Heats of molecular adsorption calculated are ?32.88, ?35.68 and ?49.57 kJ/mol for the iron (110), (100), and (111) surfaces, respectively. Heats of dissociative adsorption calculated are ?54.40, ?75.30 and ?87.90 kJ/mol for the three states on the iron (111) surface; ?51.21 and ? 73.62 kJ/mol for the two states on the iron (100) surface; and ?63.78 kJ/mol for the one state on the iron (110) surface. Activation energies for dissociative adsorption were found to be small or zero for the iron (111) surface while non-zero activation energies of 49.27 and 45.05 kJ/mol were calculated for the iron (100) and (110) surfaces, respectively. The FeH single-order bond energy has been calculated to be 298.2 kJ/mol. The radius of the hydrogen surface atom has been estimated to be 1.52 × 10^?10 m consistent with the expected size of an H^? ion. The elimination of certain surface sites for molecular adsorption as a result of the ferromagnetism of iron is suggested by the calculation. The reason for the absence of well defined LEED patterns for hydrogen adsorption on the iron (111) and (100) surfaces [Bozso et al., Appl. Surface Sci. 1 (1977) 103] is explained on the basis of the size of the H^? surface ion. The adsorption of hydrogen on the iron (110) surface is consistent with a relatively stable, small-sized H⁺₂ surface ion giving, therefore, a regular LEED pattern and a positive surface potential upon adsorption of hydrogen on this surface.     

Ga-induced superstructures on the Si(1 1 1) 7 × 7 surface

Monolayer Ga adsorption on Si surfaces has been studied with the aim of forming p-delta doped nanostructures. Ga surface phases on Si can be nitrided by N₂⁺ ion bombardment to form GaN nanostructures with exotic electron confinement properties for novel optoelectronic devices. In this study, we report the adsorption of Ga in the submonolayer regime on 7 × 7 reconstructed Si(1 1 1) surface at room temperature, under controlled ultrahigh vacuum conditions. We use in-situ Auger electron spectroscopy, electron energy loss spectroscopy and low energy electron diffraction to monitor the growth and determine the properties. We observe that Ga grows in the Stranski-Krastanov growth mode, where islands begin to form on two flat monolayers. The variation in the dangling bond density is observed during the interface evolution by monitoring the Si (LVV) line shape. The Ga adsorbed system is subjected to thermal annealing and the residual thermal desorption studied. The difference in the adsorption kinetics and desorption dynamics on the surface morphology is explained in terms of strain relaxation routes and bonding configurations. Due to the presence of an energetic hierarchy of residence sites of adatoms, site we also plot a 2D phase diagram consisting of several surface phases. Our EELS results show that the electronic properties of the surface phases are unique to their respective structural arrangement.