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1.
A model for the temperature dependence of exchange bias and coercivity in epitaxial ferromagnetic (FM)/ antiferromagnetic (AFM) bilayers is developed. In this model, the interface coupling includes two contributions, the direct coupling and the spin-flop coupling. The temperature dependence arises from the thermal disturbance to the system, involved in the thermal fluctuations of magnetization of AFM grains and the temperature modulation of the relevant magnetic parameters. In addition, the randomness of original orientations of easy axes of AFM grains after field cooling is taken into account. A self-consistent calculation scheme is proposed and numerical treatment is carried out. The results show that the temperature dependence of exchange bias and coercivity is closely related to the sizes of AFM grains and the interface exchange coupling constants. Especially, the exchange bias will have a peak and the blocking temperature will increase if the spin-flop coupling plays a role. On the other hand, the original orientation distribution of easy axes of AFM grains will affect exchange bias and coercivity prominently. The prediction has been well supported by experiments.Received: 12 May 2004, Published online: 31 August 2004PACS: 75.30.Et Exchange and superexchange interactions - 75.50.Ee Antiferromagnetics - 75.30.Gw Magnetic anisotropy  相似文献   

2.
朱金荣  香妹  胡经国 《物理学报》2012,61(18):187504-187504
比较了铁磁单层膜与铁磁/反铁磁双层膜结构中的磁畴演化行为, 发现由于反铁磁层膜对铁磁层膜的耦合作用使得系统的磁畴壁厚度、 磁畴壁等效质量、磁畴壁移动速度等发生了改变, 系统的矫顽场增强, 并出现了交换偏置场. 文章具体研究了反铁磁层耦合作用下其磁畴壁厚度、 等效质量以及磁畴壁移动速度等与反铁磁层的净磁化、 磁各向异性、界面耦合强度以及温度等的关系; 并研究了其对铁磁/反铁磁双层膜中的交换偏置场、矫顽场的影响. 进而 从磁畴结构的形成及其演化上揭示了铁磁/反铁磁双 层膜中出现交换偏置以及矫顽场增加的物理机制.  相似文献   

3.
许小勇  潘靖  胡经国 《物理学报》2007,56(9):5476-5482
研究了交换偏置双层膜中界面存在二次以及双二次交换耦合下反铁磁磁矩转动及其交换各向异性.结果表明,其反铁磁膜中的磁矩转动存在可逆“恢复行为”、不可逆“半转动行为”、不可逆“倒转行为”以及不可逆“半倒转行为”四种情形,四种情形的出现强烈地依赖于界面二次、双二次耦合以及反铁磁膜厚度.其中可逆恢复行为情况下,系统出现交换偏置,而不可逆的半转、半倒转以及倒转情形,系统不出现交换偏置.特别地,在界面处仅存在双二次耦合的情形下,其界面双二次耦合常数J2≤0.1 σ关键词: 反铁磁自旋结构 交换各向异性 界面双二次耦合 交换偏置  相似文献   

4.
Yusuf Yüksel 《Physics letters. A》2018,382(19):1298-1304
We propose an atomistic model and present Monte Carlo simulation results regarding the influence of FM/AF interface structure on the hysteresis mechanism and exchange bias behavior for a spin valve type FM/FM/AF magnetic junction. We simulate perfectly flat and roughened interface structures both with uncompensated interfacial AF moments. In order to simulate rough interface effect, we introduce the concept of random exchange anisotropy field induced at the interface, and acting on the interface AF spins. Our results yield that different types of the random field distributions of anisotropy field may lead to different behavior of exchange bias.  相似文献   

5.
提出了一个讨论铁磁/反铁磁双层膜中的交换偏置及矫顽场温度特性的物理模型,该模型,假设铁磁层为具有单畴各向异性的单畴膜而反铁磁层由许多相互独立具有多晶各向异性的颗粒组成,其温度依赖性主要来源于系统态的热不稳定,包括反铁磁颗粒易轴取向的热涨落和相关磁学量的温度依赖性等。计算结果表明其交换偏置随温度的增加非线性地减少而其矫顽场在体阻截温度处达极大值,且其体阻截温度随反铁磁颗粒粒径的增加而增加。我们的计算结果和相关实验结果一致,通过本的讨论,我们建议通过铁磁膜耦合上大粒径硬反铁磁颗粒膜可获得高交换偏置、低矫顽场且近独立于温度的相关磁学器件。  相似文献   

6.
Xiao-Yong Xu 《Surface science》2009,603(5):814-818
By investigating the antiferromagnetic spin configuration, the exchange anisotropy and the interfacial spin-flop coupling in ferromagnetic/antiferromagnetic (FM/AF) bilayers have been discussed in detail. The results show that there are four possible cases for the AF spins, namely the reversible recovering case, irreversible half-rotating case, irreversible reversing and irreversible half-reversing cases. Moreover, the realization of the cases strongly depends on interface quadratic coupling, interface spin-flop (biquadratic) coupling and AF thickness. The magnetic phase diagram in terms of the AF thickness tAF, the interfacial bilinear coupling J1 and the spin-flop coupling J2 has been constructed. The corresponding critical parameters in which the exchange bias will occur or approach saturation have been also presented. Specially, the small spin-flop exchange coupling may result in an exchange bias without the interfacial bilinear exchange coupling. However, in general, the spin-flop exchange coupling can weaken or eliminate the exchange bias, but always enhances the coercivity greatly.  相似文献   

7.
研究铁磁/反铁磁/铁磁三层膜中界面存在二次以及双二次交换耦合下反铁磁磁矩转动及其交换各向异性.结果表明,其反铁磁膜中的磁矩转动存在可逆"恢复行为"、不可逆"连续倒转行为"以及不可逆"中断倒转行为"三种情形,三种情形的出现强烈地依赖于两界面处的线性耦合和双二次耦合.钉扎界面的交换耦合与旋转界面的交换耦合相互竞争,当钉扎界面耦合占主导时,反铁磁磁矩发生可逆"恢复行为",系统出现交换偏置.在旋转界面耦合占主导情形下,其线性耦合与双二次耦合也相互竞争,分别导致反铁磁磁矩发生不可逆"连续倒转行为"和不可逆"中断倒转行为",系统都不出现交换偏置,但矫顽场都得以增强.相关结论为实验上观测的磁滞能耗以及界面垂直耦合提供了可能的解释.  相似文献   

8.
Qingrong Shao 《中国物理 B》2022,31(8):87503-087503
Exchange coupling across the interface between a ferromagnetic (FM) layer and an antiferromagnetic (AFM) or another FM layer may induce a unidirectional magnetic anisotropy and/or a uniaxial magnetic anisotropy, which has been extensively studied due to the important application in magnetic materials and devices. In this work, we observed a fourfold magnetic anisotropy in amorphous CoFeB layer when exchange coupling to an adjacent FeRh layer which is epitaxially grown on an SrTiO3(001) substrate. As the temperature rises from 300 K to 400 K, FeRh film undergoes a phase transition from AFM to FM phase, the induced fourfold magnetic anisotropy in the CoFeB layer switches the orientation from the FeRh$\langle 110\rangle $ to FeRh$\langle 100\rangle $ directions and the strength is obviously reduced. In addition, the effective magnetic damping as well as the two-magnon scattering of the CoFeB/FeRh bilayer also remarkably increase with the occurrence of magnetic phase transition of FeRh. No exchange bias is observed in the bilayer even when FeRh is in the nominal AFM state, which is probably because the residual FM FeRh moments located at the interface can well separate the exchange coupling between the below pinned FeRh moments and the CoFeB moments.  相似文献   

9.
Exchange anisotropy refers to the effect that an antiferromagnetic (AF) layer grown in contact with a ferromagnetic (FM) layer has on the magnetic response of the FM layer. The most notable changes in the FM hysteresis loop due to the surface exchange coupling are a coercivity enhanced over the value typically observed in films grown on a nonmagnetic substrate, and a shift in the hysteresis loop of the ferromagnet away from the zero field axis. A typical observation is that the thickness of the antiferromagnet needs to exceed a critical value before exchange bias is observed. Here we report on the exchange bias properties observed in an epitaxial Ni/NiO system where a thin NiO layer forms spontaneously and is observed after annealing epitaxial Ni films MBE grown on MgO substrates.  相似文献   

10.
The magnetic anisotropy of ferromagnetic (FM) Ni, Co, and Fe polycrystalline thin films grown on antiferromagnetic (AF) FeF(2)(110) epitaxial layers was studied, as a function of temperature, using ferromagnetic resonance. In addition to an in-plane anisotropy in the FM induced by fluctuations in the AF short-range order, a perpendicular (biquadratic) magnetic anisotropy, with an out-of-plane component, was found which increased with decreasing temperature above the AF Neél temperature (T(N) = 78.4 K). This is a surprising result given that the AF's uniaxial anisotropy axis was in the plane of the sample, but is consistent with prior experimental and theoretical work. The resonance linewidth had a strong dependence on the direction of the external magnetic field with respect to in-plane FeF(2) crystallographic directions, consistent with interface magnon scattering due to defect-induced demagnetizing fields. Below T(N), the exchange bias field H(E) measured via FMR for the Ni sample was in good agreement with H(E) determined from magnetization measurements if the perpendicular out-of-plane anisotropy was taken into account. A low field resonance line normally observed at H ≈ 0, associated with domain formation during magnetization in ferromagnets, coincided with the exchange bias field for T < T(N), indicating domain formation with the in-plane FM magnetization perpendicular to the AF easy axis. Thus, biquadratic FM-AF coupling is important at temperatures below and above T(N).  相似文献   

11.
研究铁磁/反铁磁双层膜系统中交换偏置场和矫顽场的冷却磁场依赖性.结果表明,随着冷却磁场的增加,交换偏置场由负值向正值转变.在转变点附近,矫顽场有-个特别的增强,并达到最大值.结果同相关实验-致.研究铁磁层和反铁磁层厚度对交换偏置场和矫顽场的影响.发现,正负交换偏置场和矫顽场随着铁磁层厚度的增大而减小,但随反铁磁层厚度的变化关系复杂.在正交换偏置场的情形,随反铁磁层厚度的增大,交换偏置场增强,矫顽场减弱;在负交换偏置场的情形,随反铁磁层厚度的增大,交换偏置场减弱,矫顽场增强.  相似文献   

12.
Tailor-made nano-structured spin materials obtained by precisely controlled nano-scale fabrication technologies for use in ultra-high density hard disk drives (HDDs), as well as an understanding of their nanomagnetics, are essential from the view point of materials, processes, and physics. Artificial control of the exchange coupling among ferromagnetic layers through the RKKY interaction (indirect) and direct exchange coupling represented as the exchange bias at the ferromagnetic (FM)/antiferromagnetic (AFM) interface are of great interest and have received significant attention to induce new modulated spin structures in conventional simple FM materials. In particular, soft magnetic under layer (SUL) with strong synthetic antiferromagnetic (SAF) coupling between two adjacent soft magnetic layers, exchange coupled stacked media introducing exchange coupling between FM layers and giant exchange anisotropy at the FM/AFM interface have attracted significant attention from the view point of applications. Within the framework of the present paper, we discuss future technical trends for SUL, granular media and the spin-valve head from the viewpoint of direct and/or indirect exchange coupling based on our recent results.  相似文献   

13.
In the investigations of antiferromagnetic (AF)/ferromagnetic (FM) bilayer samples, often distinct experimental techniques yield different values for the measured exchange anisotropy field (HE). We propose that the observed discrepancy may be accounted in part by the dependence of the unidirectional anisotropy with the value of the externally applied cooling field (h). Using a simple microscopic model for representing the AF/FM interface, which incorporates the effect of interface roughness, we show that the interface energy between the AF and FM layer indeed varies with h, as recently observed in anisotropic magnetoresistance measurements, lending support to our proposal.  相似文献   

14.
A model providing a semi-quantitative account of the magnetic behavior of Co nanoparticles embedded in a CoO matrix is presented. The results confirm that exchange coupling at the interface between ferromagnetic (FM) and antiferromagnetic (AFM) nanostructures could provide an extra source of magnetic anisotropy, leading to thermal stability of the FM nanoparticles. It is shown that perpendicular coupling between the AFM and FM moments may result in large coercivities. The energy barrier, which works against reversal is due to the AFM susceptibility anisotropy. The experimentally observed exchange bias is tentatively ascribed to pre-existing intrinsic canting of the AFM moments at the interface.  相似文献   

15.
Electronic and magnetic structures of ferromagnetic (FM)/non-magnetic (NM) and FM/antiferromagnetic (AF) bi-layer systems are calculated by the first principles approach. For the FM/NM system, we focus on the Co/Cu multi-layered structure whose interfacial layer is assumed to have a mixed composition of Co and Cu atoms, and show a possibility that Co atoms at the interface play a significant role as the spin-dependent scattering potentials. In the FM/AF system, we consider Fe or Co monolayer as FM layer and MnNi as AF layers. It is predicted that the Mn moments adjacent to FM layer are forced to align the FM moments, and those of under layer go gradually to anti-parallel alignment as in the bulk MnNi.  相似文献   

16.
盛宇  张楠  王开友  马星桥 《物理学报》2018,67(11):117501-117501
利用氧化钽缓冲层对垂直各向异性钴铂多层膜磁性的影响,构想并验证了一种四态存储器单元.存储器器件包含两个区域,其中一区域的钴铂多层膜[Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)]直接生长在热氧化硅衬底上,另一个区域在磁性膜和衬底之间沉积了一层氧化钽作为缓冲层[TaO x(0.3 nm)/Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)],缓冲层导致两个区域的垂直磁各向异性不同.在固定的水平磁场下对器件施加与磁场同向的电流,由于电流引起的自旋轨道耦合力矩,两个区域的磁化取向均会发生翻转,且拥有不同的临界翻转电流.改变通过器件导电通道的电流脉冲形式,器件的磁化状态可以在4个态之间切换.本文器件的结构为设计自旋轨道矩存储器件提供了新的思路.  相似文献   

17.
A comprehensive study of the influence of ferromagnetic thickness on the static and dynamic magnetic properties in exchange-biased FeCo/MnIr multilayers for both strong and weak exchange-bias coupling cases is presented. The results demonstrate that static and dynamic magnetic anisotropy fields decrease with ferromagnetic thickness in both cases. The rising of rotational anisotropy is discussed in conjunction with the enhanced coercivity and exchange bias by taking into account the roles of the rotatable and frozen antiferromagnetic spins in each of the two cases. Due to the contributions of the exchange bias and rotational anisotropy, the resonance frequency can be tailored up to 10 GHz. In addition, the behaviors of the frequency linewidth and the effective damping factor are discussed and ascribed to the dispersion of magnetic anisotropy.  相似文献   

18.
The effect of optimum dilution of antiferromagnetic (AF)/ferromagnetic (FM) interface necessary for observance of positive exchange bias in ion-beam sputtered Si/Ir22Mn78 (t AF = 12, 18, 24 nm)/Co20Fe60B20(t FM = 6,9,15 nm) exchange coupled bilayers is investigated by magnetic annealing at 380, 420 and 460 °C for 1 h at 5 × 10-6 Torr in presence of 500 Oe magnetic field. While the coercivity of the exchange coupled FM layer decreases with the increase in annealing temperature irrespective of the value of t AF or t FM, the hysteresis loops however shift by ≈+ 10 Oe whenever the coercivity drops in the 10–15 Oe range. This is consistent with the phase diagram of exchange bias field and coercivity derived from Meiklejohn and Bean model. The X-ray diffraction and X-ray reflectivity measurements confirmed that the texture, grain size and interface roughness of IrMn/CoFeB bilayers are thickness dependent and are correlated to the observed magnetic response of the bilayers. The results establish that optimum dilution of the IrMn/CoFeB interface by thermally diffused Mn-spins is necessary in inducing the effective coupling between the IrMn domains and diluted CoFeB layer. It is further shown that the annealing temperature required for the optimum dilution of the CoFeB interface critically depends on the thickness of the layers.  相似文献   

19.
Monte Carlo simulations have been used to study the relationship between the exchange bias properties and the interface roughness in coupled ferromagnetic/antiferromagnetic (FM/AFM) films of classical Heisenberg spins. It is shown that the variation of the exchange bias field versus the AFM anisotropy strongly depends on the FM/AFM interface. Unlike the flat interface, a non-monotonic dependence is observed for the roughest FM/AFM interface. This is explained by canted magnetic configurations at the FM/AFM interface, which appear after the first reversal due to the magnetic frustration. The temperature dependence of the exchange field is also dependent on the roughness. While the exchange field is roughly constant for the flat interface, a decrease is observed for the roughest interface as the temperature increases. This has been interpreted as a significant decrease of the effective coupling between the FM and the AFM due to the disordering of the moments at the FM/AFM interface because of the combination of magnetic frustration and temperature activation.  相似文献   

20.
The effect of noncollinearity between unidirectional and uniaxial anisotropies on asymmetric magnetization reversal of ferromagnet/antiferromagnet (FM/AFM) bilayer has been investigated. The results show the emergence of noncollinear anisotropies comes from the competition among applied magnetic field, magnetic anisotropy and exchange coupling in FM/AFM interface. The noncollinearity can lead to the asymmetry of hysteresis loop of FM/AFM bilayer. However, when the magnetic field is applied along the uniaxial anisotropy axis of FM layer, the hysteresis loop of FM/AFM bilayer is always symmetry independence of the noncollinear angle. Our results indicate that the asymmetry not only originates from the noncollinearity but also depends on the applied magnetic field orientation. Moreover, the asymmetry of hysteresis loop is always along with the appearance of unequivalence for magnetization reversal of FM/AFM bilayer, and there is a periodicity of π with orientation of applied field for its periodicity independence of the angle of the noncollinearity between the uniaxial and unidirectional anisotropies. The results can help us to open additional avenues to tailor the future advance magnetic device.  相似文献   

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